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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Slicing of silicon into sheet material: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Multiblade slurry sawing is used to slice 10 cm diameter silicon ingots into wafers 0.024 cm thick using 0.050 cm of silicon per slice (0.026 cm kerf loss). Total slicing time is less than twenty hours, and 143 slices are produced simultaneously. Productivity (slice area per hour per blade) is shown as a function or blade load and thickness, and abrasive size. Finer abrasive slurries cause a reduction in slice productivity, and thin blades cause a reduction of wafer accuracy. Sawing induced surface damage is found to extend 18 microns into the wafer.

Holden, S. C.↗
NASA NTRS1978

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Fabrication of a prototype large capacity multiple blade slurry saw is considered. Design of the bladehead which will tension up to 1000 blades, and cut a 45 cm long silicon ingot as large as 12 cm in diameter is given. The large blade tensioning force of 270,000 kg is applied through two bolts acting on a pair of scissor toggles, significantly reducing operator set-up time. Tests with an upside-down cutting technique resulted in 100% wafering yields and the highest wafer accuracy yet experienced with MS slicing. Variations in oil and abrasives resulted only in degraded slicing results. A technique of continuous abrasive slurry separation to remove silicon debris is described.

Holden, S. C.↗
NASA NTRS1978

Delayed fracture of silicon: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Bar specimens were cut from ingots of single crystal silicon, and acid etched prior to testing. Artificial surface flaws were introduced in specimens by indentation with a Knoop hardness tester. The specimens were loaded in four-point bending to 95 percent of the nominal fracture stress, while keeping the surface area, containing the flaw, wet with test liquids. No evidence of delayed fracture, and, therefore stress corrosion, of single crystal silicon was observed for liquid environments including water, acetone, and aqueous solutions of NaCl, NH4OH, and HNO3, when tested with a flaw parallel to a (110) surface. The fracture toughness was calculated.

Chen, T. J.↗
NASA NTRS1974

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Cohen, R. A.↗
NASA NTRS1984

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Costogue, E. N.↗
NASA NTRS1978

Hot forming of silicon sheet, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The hot workability of polycrystalline silicon was studied. Uniaxail stress-strain curves are given for strain rates in the range of .0001 to .1/sec and temperatures from 1100 to 1380 C. At the highest strain rates at 1380 C axial strains in excess of 20% were easily obtainable without cracking. After deformations of 36%, recrystallization was completed within 0.1 hr at 1380 C. When the recrystallization was complete, there was still a small volume fraction of unrecyrstallized material which appeared very stable and may degrade the electronic properties of the bulk materials. Texture measurements showed that the as-produced vapor deposited polycrystalline rods have a 110 fiber texture with the 110 direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction, the former 110 fiber axis changed to 111 and the compression axis became 110 . Recrystallization changed the texture to 110 along the former fiber axis and to 100 along the compression axis.

Graham, C. D., Jr.↗
NASA NTRS1979

Slicing of Silicon into Sheet Material: Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

Testing of low cost low suspension power slurry vehicles is presented. Cutting oils are unlikely to work, but a mineral oil with additives should be workable. Two different abrasives were tested. A cheaper silicon carbide from Norton gave excellent results except for excessive kerf loss: the particles were too big. An abrasive treated for lubricity showed no lubricity improvement in mineral oil vehicle. The bounce fixture was tested for the first time under constant cut rate conditions (rather than constant force). Although the cut was not completed before the blades broke, the blade lifetime of thin (100 micrometer) blades was 120 times the lifetime without the fixture. The large prototype saw completed a successful run, producing 90% cutting yield (849 wafers) at 20 wafers/cm. Although inexperience with large numbers of wafers caused cleaning breakage to reduce this yield to 74%, the yield was high enough that the concept of the large saw is proven workable.

Fleming, J. R.↗
NASA NTRS1981

Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

Grung, B. L.↗
NASA NTRS1986

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Rustioni, M.↗
NASA NTRS1978

Slicing of silicon into sheet material: Silicon sheet growth development for the large area silicon sheet task of the Low Cost Silicon Solar Array project

The limits of blade tolerance were defined. The standard blades are T-2 thickness tolerance. Good results were obtained by using a slurry fluid consisting of mineral oil and a lubricity additive. Adjustments of the formulation and fine tuning of the cutting process with the new fluid are necessary. Test results and consultation indicate that the blade breakage encountered with water based slurries is unavoidable. Two full capacity (974 wafer) runs were made on the large prototype saw. Both runs resulted in extremely low yield. However, the reasons for the low yield were lack of proper technique rather than problems with machine function. The test on the effect of amount of material etched off of an as-sawn wafer on solar cell efficiency were completed. The results agree with previous work at JPL in that the minimum material removed per side that gives maximum efficiency is on the order of 10 microns.

Fleming, J. R.↗
NASA NTRS1979

Slicing of Silicon into Sheet Material. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

Tests on mineral oil slurries show that the potential for workability and low cost is present. However, slurries tested to date which had sufficient lubricity exhibited wafer breakage problems near the end of the run for as-yet unknown reasons. The first test of the large prototype saw under cutting force control was largely successful in that the controller worked perfectly. Unfortunately a technique error (excessive stroke shortening) caused blade breakage and low yield. The latest run of the large saw pointed up the fact that an indication of end-of-stoke vertical motion, or bounce, is necessary. A circuit to provide such indication was fabricated and installed. Preliminary tests show it to be excessively noise sensitive; therefore, work on grounding and shielding to reduce this sensitivity is in progress.

Fleming, J. R.↗
NASA NTRS1977

Dip-coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.

Zook, J. D.↗
NASA NTRS1977

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗
NASA NTRS1981

Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

Whitehead, A. B.↗
NASA NTRS1976

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The technical and economic feasibility of producing solar cell quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large grain polycrystalline silicon was investigated. The dip-coating methods studied were directed toward a minimum cost process with the ultimate objective of producing solar cells with a conversion efficiency of 10% or greater. The technique shows excellent promise for low cost, labor-saving, scale-up potentialities and would provide an end product of sheet silicon with a rigid and strong supportive backing. An experimental dip-coating facility was designed and constructed, several substrates were successfully dip-coated with areas as large as 25 sq cm and thicknesses of 12 micron to 250 micron. There appears to be no serious limitation on the area of a substrate that could be coated. Of the various substrate materials dip-coated, mullite appears to best satisfy the requirement of the program. An inexpensive process was developed for producing mullite in the desired geometry.

Heaps, J. D.↗
NASA NTRS1979

Silicon on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

The technical and economic feasibility of producing solar cell quality sheet silicon was investigated. It was hoped this could be done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Work was directed towards the solution of unique cell processing/design problems encountered with the silicon-ceramic (SOC) material due to its intimate contact with the ceramic substrate. Significant progress was demonstrated in the following areas; (1) the continuous coater succeeded in producing small-area coatings exhibiting unidirectional solidification and substatial grain size; (2) dip coater succeeded in producing thick (more than 500 micron) dendritic layers at coating speeds of 0.2-0.3 cm/sec; and (3) a standard for producing total area SOC solar cells using slotted ceramic substrates was developed.

Chapman, P. W.↗
NASA NTRS1979

Silicon-on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

The technical and economic feasibility of producing solar cell-quality silicon was investigated. This was done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress in the following areas was demonstrated: (1) fabricating a 10 sq cm cell having 9.9 percent conversion efficiency; (2) producing a 225 sq cm layer of sheet silicon; and (3) obtaining 100 microns thick coatings at pull speed of 0.15 cm/sec, although approximately 50 percent of the layer exhibited dendritic growth.

Chapman, P. W.↗