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Alignment viewed through microscope. Alignment jig positions shadow mask on charge-coupled device (CCD) so metal film deposited on it precisely. Allows CCD package to be inserted and removed without disturbing alignment of mask. Holds CCD packages securely and isolates it electrostatically while providing electrical contact to each of its pins. When alignment jig assembled with CCD, used to move mask under micrometer control.
We have developed a hard x-ray coder that provides high angular resolution imaging capability using a coarse position sensitive image plane detector. The coder consists of two Fresnel zone plates. (FZP) Two such 'FZP's generate Moire fringe patterns whose frequency and orientation define the arrival direction of a beam with respect to telescope axis. The image plane detector needs to resolve the Moire fringe pattern. Pixilated detectors can be used as an image plane detector. The recently available 'CMOS' imager could provide a very low power large area image plane detector for hard x-rays. We have looked into a unit made by Rad-Icon Imaging Corp. The Shadow-Box 1024 x-ray camera is a high resolution 1024xl024 pixel detector of 50x50 mm area. It is a very low power, stand alone camera. We present some preliminary results of our investigation of evaluation of such camera.
Imaging technique may be used in series with flat or conical Bragg crystals to separate spatial/spectral convolution when spectrometer is scanned across extended source emitting at more than one wavelength. Technique allows line direction and continuum to be detected and provides data for spatial mapping of source.
Thin film thermocouples for measuring material surface temperature have been previously demonstrated on several material systems and in various hostile test environments. A well-developed thin film fabrication procedure utilizing shadow masking for patterning the sensors elements had produced thin films with sufficient durability for applications in high temperature and pressure environments that exist in air-breathing and hydrogen-fueled burner rig and engine test facilities. However, while shadow masking had been a reliable method for specimens with flat and gently curved surfaces, it had not been consistently reliable for use on test components with sharp contours. This work reports on the feasibility of utilizing photolithography processing for patterning thin film thermocouples. Because this patterning process required changes in the thin film deposition process from that developed for shadow masking, the effect of these changes on thin film adherence during burner rig testing was evaluated. In addition to the results of changing the patterning method, the effects on thin film adherence of other processes used in the thin film fabrication procedure is also presented.
Masks of improved design developed for use in fabrication of aspherical, rotationally symmetrical surfaces of mirrors, lenses, and lens molds by evaporative deposition onto rotating substrates. In deposition chamber, source and mask aligned with axis of rotation of substrate. Mask shadows source of rotating substrate. Azimuthal opening (as function of radius) in mask proportional to desired thickness (as function of radius) to which material deposited on substrate. Combination of improved masks and modern coating chambers provides optical surfaces comparable or superior to those produced by conventional polishing, computer-controlled polishing, replication from polished molds, and diamond turning, at less cost in material, labor, and capital expense.
A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiC(0)O2, on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof. The batteries produced by the above process are disclosed.
A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof.
A multitemporal method to map snow cover in mountainous terrain is proposed to guide Landsat climate data record (CDR) development. The Landsat image archive including MSS, TM, and ETM+ imagery was used to construct a prototype Landsat snow cover CDR for the interior northwestern United States. Landsat snow cover CDRs are designed to capture snow-covered area (SCA) variability at discrete bi-monthly intervals that correspond to ground-based snow telemetry (SNOTEL) snow-water-equivalent (SWE) measurements. The June 1 bi-monthly interval was selected for initial CDR development, and was based on peak snowmelt timing for this mountainous region. Fifty-four Landsat images from 1975 to 2011 were preprocessed that included image registration, top-of-the-atmosphere (TOA) reflectance conversion, cloud and shadow masking, and topographic normalization. Snow covered pixels were retrieved using the normalized difference snow index (NDSI) and unsupervised classification, and pixels having greater (less) than 50% snow cover were classified presence (absence). A normalized SCA equation was derived to independently estimate SCA given missing image coverage and cloud-shadow contamination. Relative frequency maps of missing pixels were assembled to assess whether systematic biases were embedded within this Landsat CDR. Our results suggest that it is possible to confidently estimate historical bi-monthly SCA from partially cloudy Landsat images. This multitemporal method is intended to guide Landsat CDR development for freshwaterscarce regions of the western US to monitor climate-driven changes in mountain snowpack extent.
The optical performance of a virtual image display system is evaluated. Observation of a two-element (unachromatized doublet) refractive system led to the conclusion that the major source of image degradation was lateral chromatic aberration. This conclusion was verified by computer analysis of the system. The lateral chromatic aberration is given in terms of the resolution of the phosphor dots on a standard shadow mask color cathode ray tube. Single wavelength considerations include: astigmatism, apparent image distance from the observer, binocular disparities and differences of angular magnification of the images presented to each of the observer's eyes. Where practical, these results are related to the performance of the human eye. All these techniques are applied to the previously mentioned doublet and a triplet refractive system. The triplet provides a 50-percent reduction in lateral chromatic aberration which was the design goal. Distortion was also reduced to a minimum over the field of view. The methods used in the design of the triplet are presented along with a method of relating classical aberration curves to image distance and binocular disparity.
The angular distributions of oxygen atoms incident on surfaces in low earth orbit have been calculated for a number of ambient gas temperatures. Atom fluxes to surfaces were modeled by integrals over all permitted angles of incidence. Angles of incidence are limited by masking structures, and a number of types of mask were considered. Combustible surfaces exposed to the orbital atmosphere are heavily etched, creating profiles in mask shadows that are sensitive to ambient temperatures. The influence of the angular distributions on the characteristics of etched surfaces is discussed. Profiles measured for a September, 1983 flight were fitted to this model profile with a temperature of 750 + or - 50 K, which agrees with estimates based on solar activity at that time. Applications to sensing ambient temperatures and oxygen atom densities are discussed.
The alignment of a dual-axes sun sensor subsystem to a telescope having a multiple sensor subsystem is described. The sun sensor consists of two analog and one digital silicon detectors. The analog detectors are shadow mask type operating in the visible spectrum. The detectors are mounted for azimuth and elevation positioning of biaxial gimbals. The digital detector is a linear diode array that operates at a spectral position of 0.7 micron and is used for elevation positioning. The position signals correspond to relative angles between the sun sensor and the solar disk. These three detectors are aligned on an Invar structure which is mounted to a Cassegrain telescope. This telescope relays solar radiance to an eight channel detector subsystem operating in the infrared range from 2 to 10 microns. The test technique and results to check the boresight alignment of these two subsystems by scanning the solar disk will be reported. The boresight alignment for both the azimuth and elevation axes of the two detector subsystems is verified using this technique.
The objective of this research is to use a combination of carbon nanotubes and silicon-based microfabrication and micromachining processes to produce unique micro-sized chemical and gaseous sensors. Polished quartz substrate is used. Interdigitated structure is used for the sensing elements. Metallic catalysts for the growth of the carbon nanotube include copper, iron, nickel, and cobalt. Various thicknesses of the metallic catalysts are used in this study varying between 5 to 20 microns. Depositing of the metallic catalyst is accomplished using an ion-beam sputtering thin film technique and a shadow mask. Single wall carbon nanotubes are successfully formed over the metallic catalyst layer. Preliminary measurements of the carbon nanotubes show this nanotube contained film over the sensing elements which had a resistance value of 400 ohms at room temperature. This is a more conductive film comparing to metal oxide films, such as SnO2 or ZnO, that are now widely used in gaseous sensor research. Evaluation of the carbon nanotube film for potential gaseous sensing will be carried out.
Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between them, to determine the cause of the poor yields. As a student of electrical engineering with some material science background, my role in this research is to develop techniques for analyzing the electrical characteristics of the CuInS2 cells. My first task was to design a shadow mask to be used to place molybdenum contacts under a layer of CuInS;! in order to analyze the contact resistance between the materials. In addition, I have also analyzed evaporated aluminum top contacts and have tested various methods of increasing their thicknesses in order to decrease series resistance. More recently I have worked with other members of the research group in reviving a vertical cold-wall reactor for experimentation with CuInS2 quantum dots. As part of that project, I have improved the design for a variable frequency and pulse width square wave generator to be used in driving the precursor injection process. My task throughout the remainder of my tenure is to continue to analyze and develop tools for the analysis of electrical properties of the CuInS2 cells with the ultimate goal of discovering ways to improve the efficiency of our photovoltaic cells. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While The research group lead by Dr. Hepp has spent several years researching copper indium
Possible areas of mafic material on the rim and floor of Scott crater (82.1 deg S, 48.5 deg E) are suggested by analysis of shadow-masked Clementine false-color-ratio images. Mafic materials common in mare and pyroclastic materials can produce more oxygen than can highlands materials, and mafic materials close to the south pole may be important for propellant production for a future lunar mission. If the dark patches are confirmed as mafic materials, this finding would suggest that other mafic patches may exist, even closer to the poles, which were originally mapped as purely anorthositic.
Possible areas of mafic material on the rim and floor of Scott crater (82.1 S, 48.5 E) and on the northeast flank of Mons Malapert (85.5 S, 0 E) are suggested by analysis of shadow-masked Clementine false-colorration images. Mafic materials can produce more oxygen than can highlands materials, and mafic materials close to the south pole may be important for propellant production for a future lunar mission. If the dark patches are confirmed as mafic materials, this finding would suggest that other mafic patches may also exist, perhaps even closer to the poles. These preliminary findings illustrate the need for additional site selection studies in the lunar polar regions, to improve our capability to "live off the land".
An experiment has shown that when single-walled carbon nanotubes (SWNTs) are grown by chemical vapor deposition in the presence of an electric field of suitable strength, the nanotubes become aligned along the electric field. In an important class of contemplated applications, one would exploit this finding in fabricating nanotube transistors; one would grow SWNTs across gaps between electrodes that would serve, subsequently, as source and drain contacts during operation of the transistors. In preparation for the experiment, a multilayer catalyst comprising a 20-nmthick underlayer of iridium (platinum group), a 1-nm-thick middle layer of iron, and a 0.2-nm-thick outer layer of molybdenum was ion-beam sputtered onto a quartz substrate. A 25 micrometers-diameter iron wire was used as a shadow mask during the sputtering to create a 25 micrometers gap in the catalyst. Then electrical leads were connected to the catalyst areas separated by the gap so that these catalyst areas would also serve as electrodes. The substrate as thus prepared was placed in a growth chamber that consisted of a quartz tube of 1-in. (2.54-cm) diameter enclosed in a furnace. SWNTs of acceptably high quantity and quality were grown in 10 minutes with methane at atmospheric pressure flowing through the chamber at a rate of 1,000 standard cubic centimeters per minute at a temperature of 900 C. To prevent oxidation of the SWNTs, the chamber was purged with 99.999-percent pure argon before and after growth, and the chamber was cooled to less than 300 C before opening it to the atmosphere after growth. When no voltage was applied across the gap, the SWNTs grew in random directions extending out from the edges of the catalyst at the gap. When a potential of 10 V was applied between the catalyst/electrode areas to create an electric field across the gap, the SWNTs grew across the gap, as shown in the figure.
An improved sensor assembly has been developed for astronomical imaging at photon energies ranging from 1 to 100 keV. The assembly includes a thallium-doped cesium iodide scintillator divided into pixels and coupled to an array of high-gain avalanche photodiodes (APDs). Optionally, the array of APDs can be operated without the scintillator to detect photons at energies below 15 keV. The array of APDs is connected to compact electronic readout circuitry that includes, among other things, 64 independent channels for detection of photons in various energy ranges, up to a maximum energy of 100 keV, at a count rate up to 3 kHz. The readout signals are digitized and processed by imaging software that performs "on-the-fly" analysis. The sensor assembly has been integrated into an imaging spectrometer, along with a pair of coded apertures (Fresnel zone plates) that are used in conjunction with the pixel layout to implement a shadow-masking technique to obtain relatively high spatial resolution without having to use extremely small pixels. Angular resolutions of about 20 arc-seconds have been measured. Thus, for example, the imaging spectrometer can be used to (1) determine both the energy spectrum of a distant x-ray source and the angular deviation of the source from the nominal line of sight of an x-ray telescope in which the spectrometer is mounted or (2) study the spatial and temporal development of solar flares, repeating - ray bursters, and other phenomena that emit transient radiation in the hard-x-ray/soft- -ray region of the electromagnetic spectrum.
A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.