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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Secondary electron emission measurements from imidazolium-based ionic liquids

The electron-induced secondary electron emission (SEE) yields of imidazolium-based ionic liquids are presented for primary electron beam energies between 30 and 1000 eV. These results are important for understanding plasma synthesis of nanoparticles in plasma discharges with an ionic liquid electrode. Due to their low vapor pressure and high conductivity, ionic liquids can produce metal nanoparticles in low-pressure plasmas through reduction of dissolved metal salts. In this work, the low vapor pressure of ionic liquids is exploited to directly measure SEE yields by bombarding the liquid with electrons and measuring the resulting currents. The ionic liquids studied are [BMIM][Ac], [EMIM][Ac], and [BMIM][BF 4 ]. The SEE yields vary significantly over the energy range, with maximum yields of around 2 at 200 eV for [BMIM][Ac] and [EMIM][Ac], and 1.8 at 250 eV for [BMIM][BF 4 ]. Molecular orbital calculations indicate that the acetate anion is the likely electron donor for [BMIM][Ac] and [EMIM][Ac], while in [BMIM][BF 4 ], the electrons likely originate from the [BMIM] + cation. The differences in SEE yields are attributed to varying ionization potentials and molecular structures of the ionic liquids. These findings are essential for accurate modeling of plasma discharges and understanding SEE mechanisms in ionic liquids.

ionic liquids↗
DOE OSTI2024

Secondary-electron imaging of bulk crystalline specimens in an aberration corrected $\text{STEM}$

Atomic-scale electron microscopy traditionally probes thin specimens, with thickness below 100 nm, and its feasibility for bulk samples has not been documented. Here in this study, we explore the practicality of scanning transmission electron microscope (STEM) imaging with secondary electrons (SE), using a silicon-wedge specimen having a maximum thickness of 18 μm. We find that the atomic structure is present in the entire thickness range of the SE images although the background intensity increases moderately with thickness. The consistent intensity of secondary electron (SE) images at atomic positions and the modest increase in intensity in between (background) observed in silicon suggest a limited contribution from SEs generated by backscattered electrons, a conclusion supported by our multislice calculations. We conclude that achieving atomic resolution in SE imaging for bulk specimens is indeed attainable using aberration-corrected STEM and that an aberration-corrected scanning electron microscope (SEM) may have the capacity for atomic-level resolution, holding great promise for future strides in materials research.

25 ENERGY STORAGE↗
DOE OSTI2024

Analysis of multipacting threshold sensitivity to the random distributions of the secondary electron yield parameters

The way multipacting develops, depends strongly on the secondary emission property of the surface material. The knowledge of secondary electron yield is crucial for accurate prediction of the multipacting threshold. Variations in secondary electron yield parameters from experimental measurements create uncertainty, stemming from handling and surface preparation, and these uncertainties significantly affect multipacting threshold predictions. Despite their significance, the previous studies on the multipacting phenomenon did not adequately address the effect of an assumed random distribution of the secondary emission parameters on the multipacting threshold. Therefore, this paper aims to provide a comprehensive statistical study on how the different random distributions of the secondary emission parameters and, as a result, the uncertainty in the secondary electron yield affect multipacting thresholds. We focus on three commonly used distributions, namely uniform, normal, and truncated normal distributions, to define the uncertainty of random inputs. We use the chaos polynomial expansion method to determine how much each of the random parameters contributes to the multipacting threshold uncertainty. Additionally, we calculate Sobol sensitivity indices to evaluate the impact of the individual parameters or groups of parameters on the model outputs and study how different random distributions of these parameters affected the Sobol index results.

physics↗
DOE OSTI2023

The influence of secondary electron yield uncertainty on the single-sided multipacting in dielectrics

Multipacting is an electrical discharge caused by the emission of secondary electrons which can occur in vacuum radio frequency systems. Generally multipacting is highly undesirable obstacle, which increases the noise level as well as the return loss of radio frequency systems. Therefore, a prediction of multipacting is necessary to avoid it during radio frequency system design. In this regard, the accurate evaluation of the factors that affect multipacting is required. One of the critical factors determining the multipacting development is the secondary electron yield of the material. In practice the emission properties of materials are not known very accurately. There are uncertainties in the measured values of this yield. In this paper, the generalized Polynomial Chaos (gPC) method is used to quantify uncertainty of the secondary electron yield. This method is verified by Monte Carlo simulation. The effect of uncertainty for two secondary electron yield parameters is then investigated on the multipacting using gPC method.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Impact of photoexcitation on secondary electron emission: A Monte Carlo study

Understanding the transport of photogenerated charge carriers in semiconductors is crucial for applications in photovoltaics, optoelectronics, and photo-detectors. While recent experimental studies using scanning ultrafast electron microscopy (SUEM) have demonstrated that the local change in the secondary electron emission induced by photoexcitation enables direct visualization of the photocarrier dynamics in space and time, the origin of the corresponding image contrast still remains unclear. Here, we investigate the impact of photoexcitation on secondary electron emissions from semiconductors using a Monte Carlo simulation aided by time-dependent density functional theory. Particularly, we examine two photoinduced effects: the generation of photocarriers in the sample bulk and the surface photovoltage (SPV) effect. Using doped silicon as a model system and focusing on primary electron energies below 1 keV, we found that both the hot photocarrier effect immediately after photoexcitation and the SPV effect play dominant roles in changing the secondary electron yield (SEY), while the distribution of photocarriers in the bulk leads to a negligible change in SEY. Our work provides insights into electron–matter interaction under photo-illumination and paves the way toward a quantitative interpretation of the SUEM contrasts.

Physics↗
DOE OSTI2024

Energy-dependent implementation of secondary electron emission models in continuum kinetic sheath simulations

The plasma-material interactions present in multiple fusion and propulsion concepts between the flow of plasma through a channel and a material wall drive the emission of secondary electrons. This emission is capable of altering the fundamental structure of the sheath region, significantly changing the expected particle fluxes to the wall. The emission spectrum is separated into two major energy regimes, a peak of elastically backscattered primary electrons at the incoming energy, and cold secondary electrons inelastically emitted directly from the material. The ability of continuum kinetic simulations to accurately represent the secondary electron emission is limited by relevant models being formulated in terms of monoenergetic particle interactions which cannot be applied directly to the discrete distribution function. As a result, rigorous implementation of energy-dependent physics is often neglected in favor of simplified, constant models. We present here a novel implementation of semi-empirical models in the boundary of continuum kinetic simulations which allows the full range of this emission to be accurately captured in physically-relevant regimes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Secondary electron emission for reticulated carbon foam surfaces using direct measurements and spectroscopic analysis

This study investigates secondary electron emission (SEE) characteristics of reticulated foams using direct measurements and analytical modeling. Total SEE was quantified, revealing suppression of up to 44% in carbon foam structures compared to planar graphite surfaces. An optimal geometric configuration was identified and supported by analytical models. SEE angular dependence experiments showed diverse behaviors: fiber-like behavior and directional dependence for pore and ligaments on the mm scale, with fuzz-like characteristics when the foam features are between 10–100 µm. Electron energy analyzer measurements showed that carbon foams preferentially suppress inelastic backscattered electrons (BSEs) more so than true secondary electrons (SEs). The analysis indicated a larger fraction of low-energy SE generation in foams compared to flat surfaces due to increased emission from curved fiber ligaments and tertiary SEs from high-energy BSEs. These findings have implications for design and optimization of materials with tailored electron emission properties for applications like plasma-facing components, spacecraft materials, and accelerator surfaces.

Auger↗
DOE OSTI2022

Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

Abstract Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy-based technique, electron beam-induced current imaging, except that the signal in the STEM is generated by the emission of SEs, hence the name secondary electron e-beam-induced current (SEEBIC), and in this case, the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Identifying the secondary electron cutoff in ultraviolet photoemission spectra for work function measurements of non-ideal surfaces

Abstract Absolute values of work functions can be determined in ultraviolet photoemission spectroscopy (UPS) by measuring the minimum kinetic energy of secondary electrons generated by a known photon energy. However, some samples can produce spectra that are difficult to interpret due to additional intensity below the true secondary electron cutoff. Disordered absorbates on elemental metals add small intensity below the onset for the transition metal surfaces studied, which can be attributed to energy losses after photoelectrons are generated. In contrast, spectra from WO 3−x films can produce multiple onsets with comparable intensity which do not fit this model. False onsets (in the context of work function measurements) can be minimized by optimizing experimental detection parameters including limiting analyzer acceptance angles and pass energy. True work functions can be identified by examining the onsets as the sample bias is varied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

An efficient surrogate model of secondary electron formation and evolution

This work extends the adjoint-deep learning framework for runaway electron (RE) evolution, developed by McDevitt et al. [Phys. Plasmas 32, 042503 (2025)], to account for large-angle collisions. By incorporating large-angle collisions, the framework allows the avalanche of REs to be captured, an essential component of RE dynamics. This extension is accomplished by using a Rosenbluth–Putvinski approximation to estimate the distribution of secondary electrons generated by large-angle collisions. By evolving both the primary and multiple generations of secondary electrons, the present formulation can capture both the detailed temporal evolution of a RE population beginning from an arbitrary initial momentum space distribution, along with providing approximations to the saturated growth and decay rates of the RE population. Predictions of the adjoint-deep learning framework are verified against a traditional RE solver, with good agreement present across a broad range of parameters.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Secondary electron emission of reticulated foam materials

Complex material surfaces can reduce secondary electron emission (SEE) and sputtering via geometric trapping. In this work, the SEE yields for a range of open-cell reticulated carbon foam geometries are characterized using scanning electron microscopy. The total reduction in the SEE yield from carbon foams with a 3% volume fill density and 10–100 pores per inch (PPI) is shown to be between 23.5% and 35.0%. Contributions of a foam backplate are assessed by experimentally and analytically defining the critical parameter, transparency. The transparency of a foam is quantified and is shown to affect the primary electron angular dependence on the SEE yield. For the same thickness of 6 mm, it is found that higher PPI decreases foam transparency from 32% to 0% and reduces the SEE yield. The SEE yield from carbon foams is also shown to have weaker dependence on the morphology of the surface compared with fuzzes and velvets and less variation across individual sample surfaces due to the rigidity of their ligament structures and isotropic geometries.

Physics↗
DOE OSTI2022

Spatial resolution in secondary-electron microscopy

Here, we first review the significance of resolution and contrast in electron microscopy, and the effect of the electron optics on these two quantities. We then outline the physics of the generation of secondary electrons (SE) and their transport and emission from the surface of a specimen. Contrast and resolution are discussed for different kinds of SE imaging in scanning (SEM) and scanning-transmission (STEM) instruments, with some emphasis on the observation of individual atoms and atomic columns in a thin specimen. The possibility of achieving atomic resolution from a bulk specimen at SEM energies is also considered.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Advanced focusing system for secondary electrons in a bunch shape monitor

Non-destructive measurements of longitudinal beam profile in non-relativistic hadron accelerators are usually performed with Bunch Shape Monitors that utilize secondary electron emission to reproduce the shape of a primary ion beam. The existing devices, however, have poor electron collection efficiency from the wire and are limited to one dimensional measurements of the phase coordinate. Here, we present the development of a bunch shape monitor with improved performance for proton beams to be used in the Spallation Neutron Source accelerator. This improvement was achieved by adding focusing optics between the wire and the entrance slit, which will also allow measurements over a much higher dynamic range. Here we present the design, simulation and experimental test results of the developed new electron beam guidance system for the existing SNS bunch shape monitor that allowed significant improvement in the collection efficiency.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Atomic-scale secondary electron imaging for heterogeneous catalysis research

Surface characterization at the atomic scale is essential for understanding the catalytic properties of supported metal nanoparticles. Secondary electron (SE) imaging in scanning transmission electron microscopy (STEM) provides three-dimensional surface topographic information, enabling the characterization of the size, morphology, and distribution of supported nanoparticles. Furthermore, real-time observation of catalyst materials in a gaseous environment would enhance the understanding of catalyst dynamics under operational conditions. Ongoing technical developments in SE-STEM and advancements in computational methods are expected to facilitate atomic-scale surface observations and enable more quantitative and statistical analyses. This progress will not only elucidate fundamental mechanisms at the atomic level but also provide comprehensive and universal insights into catalyst performances. Here, this minireview showcases the recent advancements and research findings in surface-sensitive SE imaging in STEM for the characterization of active catalyst materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

NOVEL METHODS FOR IN SITU HIGH DENSITY SURFACE CLEANING SCRUBBING OF ULTRAHIGH VAC LONG NARROW TUBES TO REDUCE SECONDARY ELECTRON YIELD AND OUT GASSING

This project developed new methods for cleaning the inside surfaces of very long, narrow vacuum tubes used in particle accelerators. Traditional cleaning approaches are expensive, slow, or difficult to implement in accelerator tunnels. We designed and tested a portable plasma discharge cleaning system that uses lower-cost microwave and magnetron technologies to reduce outgassing and secondary electron emission from stainless steel and copper surfaces. The system, called the Plasma Discharge Test System (PDTS), allows accelerator components to be scrubbed more efficiently, which can improve performance and reduce maintenance costs for research and industrial applications.

POOLE, JOE HENRY [PRESIDENT]↗