Measuring resistance or conductance of insulators
Device protects stable fixture for holding electrodes against specimen conductance or resistance measurement with substantially less labor and expense than previous methods.
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Device protects stable fixture for holding electrodes against specimen conductance or resistance measurement with substantially less labor and expense than previous methods.
A four-terminal electrical connector device (40) for testing and measuring unknown resistances of initiators (11) used for starting pyrotechnic events aboard a Space Transportation System. The testing device minimizes contact resistance degradation effects and so improves the reliability of resistance measurement taken with the device. Separate and independent voltage sensing (19) and current supply (20) circuits each includes a pair of socket contacts (13-16) for mating engagement with the pins (17,18) of the initiator. The unknown resistance that is measured by the device is the resistance of the bridgewire (23) of the initiator which is required to be between 0.95 and 1.15 ohms.
We present magnetic characterization, charge resistivity, and optical photoluminescence measurements on amorphous yttrium iron oxide thin films ( a-Y–Fe–O), with supporting comparisons to amorphous germanium ( a-Ge) films. We measured magnetic properties with both SQUID magnetometry and polarized neutron reflectometry. These results not only confirm that a-Y–Fe–O is a disordered magnetic material with strong predominantly antiferromagnetic exchange interactions and a high degree of frustration, but also that it is best understood electrically as a disordered semiconductor. As with amorphous germanium, a-Y–Fe–O obeys expectations for variable-range hopping through localized electron states over a wide range of temperature. We also clarify the consequences of charge transport through such a semiconducting medium for non-local voltage measurements intended to probe spin transport in nominally insulating magnetic materials. We further compare non-local resistance measurements made with “quasi-dc” automated current reversal to ac measurements made with a lock-in amplifier. These show that the “quasi-dc” measurement has an effective ac current excitation with frequency up to approximately 22 Hz, and that this effective ac excitation can cause artifacts in these measurements including incorrect sign of the non-local resistance. Here, this comprehensive investigation of non-local resistance measurements in a-Y–Fe–O shows no evidence of spin transport on micrometer length scales, which is contrary to our original work, and in line with more recent investigations by other groups.
We developed a resistance measurement using radio frequency reflection to investigate the electrical transport characteristics under destructive pulsed magnetic fields above 100 T. A sample stage consisting of a homemade flexible printed circuit reduced the noise caused by the induced voltage from the pulsed magnetic fields, improving the accuracy of the measurements of the reflected waves. From the obtained reflectance data, the absolute value of the magnetoresistance was successfully determined by analyzing the phase with admittance charts. In conclusion, these developments enable more accurate and comprehensive measurements of electrical resistance in pulsed magnetic fields.
Recent angle-resolved c-axis resistivity measurements of the stripe-ordered La 2-x Ba x CuO 4 (LBCO) with x = 1/8 revealed an unexpected dependence on the direction of the in-plane magnetic field. We argue that these and other available data for the c-axis transport point to the existence of superconducting pairs of two different types in the x = 1/8 LBCO below the stripe ordering temperature. The pairs of one type carry finite momentum and are confined to the Cu-O planes; the pairs of other type (probably the conventional d wave with zero momentum) propagate along narrow conducting channels traversing the sample in the c-axis direction. The evidence for this comes from the observed exponential temperature dependence of the c-axis resistivity ρ c (T ) which we attribute to the thermally excited slips of the superconducting phase and flux flows. We present a simple theory to fit the observed π/2-periodic dependence of ρ c on the direction of the in-plane magnetic field and the other data.
Thermal resistance measurement technique development for transistors
Resistance measurements are given in graphical for when a simulated lightning discharge strikes on an exposed top hat cover simulator. The test sequence was to measure the electric and magnetic fields induced inside a redesigned solid rocket motor case.
This tech note exhibits AC resistance measurement system of the Skew Quadrupole magnet with and without a beam pipe used in the AGS ring. The measurement results are compared with a system that uses skew quad power supply for the magnet. An introduction to ac resistance conceptualization and modeling is presented. It is followed by measurement methodology used and the results.
To date, very little is understood about electrotransport in thin films. One reason for this is the lack of methods in which electromigration can be adequately monitored dynamically. In this thesis, a new nondestructive method for the study of the electrotransport phenomenon in thin aluminum films is presented. This method makes use of electrical resistance measurements of various regions along the test sample to monitor changes in resistance resulting from electromigration. The advantage of this method is that resistance changes can be observed long before void formation can be seen using standard microscopy methods. In order to achieve the best efficiency using this method, special consideration must be given to the design of the sample. Design problems and their respective solutions are given. The results of the electrical resistance measurements are interpreted by means of photographs taken with an scanning electron microscope. The increase in resistance of the aluminum samples is interpreted to be due to void formation. The expected decrease in resistance near the anode was never observed. It is shown that mass accumulation takes on the form of hillocks and whiskers on the surface of the aluminum film, which does not contribute appreciably to conductivity.
- Volume resistivity is a key material property needed for assessing the risk of electrostatic discharge (ESD) due to spacecraft charging. We have developed a volume resistivity test system capable of measuring volume resistivity ≥1019 Ω·cm in vacuum and at cryogenic temperatures. Key components of this new setup include a custom test fixture and very low noise battery voltage supply.
Calibration resistor for Apollo Standard Initiator Resistance Measuring Equipment
Contact resistance measurements used in contaminant removal and metallic adhesion on iron surfaces
A method is described for measuring the conductivity of materials without having to make electrical contact with the material. Currents which are magnetically induced in the conducting sample are measured by means of the magnetic fields they produce. Although induction techniques have been used in the past for this type of measurement, the configuration presented here makes it possible to perform absolute measurements of resistivity over a wide range of values for relatively small samples. The theory of the technique, the results of measurements made with it, and a comparison of the technique with other methods are presented.
Technique for measuring electrical resistivities of fibers of graphite, silicon carbide/silicon nitride mixture, and other materials used in composites simple, accurate, and reproducible. Suitable for monofilament fibers with diameters of about 10 to 50 micrometers. Also adapted to two fiber strands.
Report presents resistivity measurements and their interpretation for neutron-irradiated pure metals and Al-Zn alloys. The influence of temperature, the role of point defects, and the aging behavior on resistivity are considered. The experimental procedures and results are discussed in detail.
Electrical resistivity measurements on pure metals in temperature range 0 to 273 K
Tables of electrical resistivity measurements on 16 pure metals from zero to 273 deg K
Direct reading instrument using four point probe and two analog computing circuits for Si and Ge resistivity measurements