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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

All‐Liquid Reconfigurable Electronics Using Jammed MXene Interfaces

Abstract Rigid, solid‐state components represent the current paradigm for electronic systems, but they lack post‐production reconfigurability and pose ever‐increasing challenges to efficient end‐of‐life recycling. Liquid electronics may overcome these limitations by offering flexible in‐the‐field redesign and separation at end‐of‐life via simple liquid phase chemistries. Up to now, preliminary work on liquid electronics has focused on liquid metal components, but these devices still require an encapsulating polymer and typically use alloys of rare elements like indium. Here, using the self‐assembly of jammed 2D titanium carbide (Ti 3 C 2 T x ) MXene nanoparticles at liquid–liquid interfaces, “all‐liquid” electrically conductive sheets, wires, and simple functional devices are described including electromechanical switches and photodetectors. These assemblies combine the high conductivity of MXene nanosheets with the controllable form and reconfigurability of structured liquids. Such configurations can have applications not only in electronics, but also in catalysis and microfluidics, especially in systems where the product and substrate have affinity for solvents of differing polarity.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electronically reconfigurable complex oxide heterostructure freestanding membranes

In recent years, lanthanum aluminate/strontium titanate (LAO/STO) heterointerfaces have been used to create a growing family of nanoelectronic devices based on nanoscale control of LAO/STO metal-to-insulator transition. The properties of these devices are wide-ranging, but they are restricted by nature of the underlying thick STO substrate. Here, single-crystal freestanding membranes based on LAO/STO heterostructures were fabricated, which can be directly integrated with other materials via van der Waals stacking. The key properties of LAO/STO are preserved when LAO/STO membranes are formed. Conductive atomic force microscope lithography is shown to successfully create reversible patterns of nanoscale conducting regions, which survive to millikelvin temperatures. The ability to form reconfigurable conducting nanostructures on LAO/STO membranes opens opportunities to integrate a variety of nanoelectronics with silicon-based architectures and flexible, magnetic, or superconducting materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Platinum-like HER onset in a GNR/MoS 2 quantum dot heterostructure through curvature-dependent electron density reconfiguration

Tailoring the curvature-directed lattice strain in GNRs along with optimal surface anchoring of molybdenum disulfide (MoS 2 ) quantum dots (QDs) can lead to a unique heterostructure with Pt-like HER activity (onset potential –60 mV). The curvature-induced electronic charge redistribution at the curved region in the graphene nanoribbons allows a facile GNR-MoS 2 interfacial charge transfer in the heterostructure, making the interfacial sulfur (S) more active towards the HER. Finally, the density functional theory (DFT) calculations confirmed electronically activated interfacial S-based catalytic centers in the curved GNR-based heterostructure leading to Pt-like HER activity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Fluidic Flow Assisted Deterministic Folding of Van der Waals Materials

Origami offers a distinct approach for designing and engineering new material structures and properties. The folding and stacking of atomically thin van der Waals (vdW) materials, for example, can lead to intriguing new physical properties including bandgap tuning, Van Hove singularity, and superconductivity. On the other hand, achieving well-controlled folding of vdW materials with high spatial precision has been extremely challenging and difficult to scale toward large areas. In this paper, a deterministic technique is reported to fold vdW materials at a defined position and direction using microfluidic forces. Electron beam lithography (EBL) is utilized to define the folding area, which allows precise control of the folding geometry, direction, and position beyond 100 nm resolution. Using this technique, single-atomic-layer vdW materials or their heterostructures can be folded without the need for any external supporting layers in the final folded structure. In addition, arrays of patterns can be folded across a large area using this technique and electronic devices that can reconfigure device functionalities through folding are also demonstrated. Such scalable formation of folded vdW material structures with high precision can lead to the creation of new atomic-scale materials and superlattices as well as opening the door to realizing foldable and reconfigurable electronics.

2D materials↗
DOE OSTI2022

Reconfigurable perovskite nickelate electronics for artificial intelligence

Reconfigurable devices offer the ability to program electronic circuits on demand. Here, in this work, we demonstrated on-demand creation of artificial neurons, synapses, and memory capacitors in post-fabricated perovskite NdNiO 3 devices that can be simply reconfigured for a specific purpose by single-shot electric pulses. The sensitivity of electronic properties of perovskite nickelates to the local distribution of hydrogen ions enabled these results. With experimental data from our memory capacitors, simulation results of a reservoir computing framework showed excellent performance for tasks such as digit recognition and classification of electrocardiogram heartbeat activity. Using our reconfigurable artificial neurons and synapses, simulated dynamic networks outperformed static networks for incremental learning scenarios. The ability to fashion the building blocks of brain-inspired computers on demand opens up new directions in adaptive networks.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2005

Re-Configurable Electronics Characterization under Extreme Thermal Environment

The need for reconfigurable electronics is driven by requirements to survive longer missions and harsher environments. It is possible to compensate for degradations in Extreme Environments (EE). EE has effect on electronics: circuits are designed to exploit device characteristics and when a certain temperature or radiation range is exceeded the circuit function gradually degrades. It is possible to employ Hardening by reconfiguration (HBR) to mitigate drifts, degradation, or damage on electronic devices in EE by using reconfigurable devices and an adaptive self-reconfiguration of circuit topology. In this manner degraded components can be salvaged, and completely damaged components can be bypassed. The challenge of conventional design is replaced with that of designing a recover process that automatically performs the (re) design in place of the designer. The objective of testing a Digital Signal Processor (DSP) under the extreme temperatures was to determine the lowest temperature at which the DAP can operate. The objective of testing a Xilinx VirtexII Pro FPGA board was to initially find our whether the evaluation board and the FPGA would survive and continue at temperature ranges from -180 C, and 120 C. The Virtex II functioned correctly at the temperatures tested. The next test was done on the GM-C filter building block using the same temperature range as the Virtex II. The current lower and upper limits were shown to be reduced as the temperature gets lower. The device function can be recovered by increasing the Vb from .08V to .85V. The negative and positive saturation voltages increases as the temperature gets higher. The function of the device can be recovered by decreasing the Vb from .8V to around .75V. The next test was performed to test the recovery of the GmC low pass filter through Vb in a filter circuit. The test indicate that bias voltage control adjustment is an efficient mechanism for circuit recovery at extreme temperatures.

reliability↗
NASA NTRS2006

Temperature-Adaptive Circuits on Reconfigurable Analog Arrays

Demonstration of a self-reconfigurable Integrated Circuit (IC) that would operate under extreme temperature (-180 C and 120 C) and radiation (300krad), without the protection of thermal controls and radiation shields. Self-Reconfigurable Electronics platform: a) Evolutionary Processor (EP) to run reconfiguration mechanism; b) Reconfigurable chip (FPGA, FPAA, etc).

self-recovery↗
NASA NTRS2004

RF MEMS Based Reconfigurable Antennas

The presentation will first of all address the advantages of RF MEMS circuit in antenna applications and also the need for electronically reconfigurable antennas. Next, discuss some of the recent examples of RF MEMS based reconfigurable microstrip antennas. Finally, conclude the talk with a summary of MEMS antenna performance.

Simons, Rainee N.↗
NASA NTRS2006

Extreme Temperature Electronics Using a Reconfigurable Analog Array

Temperature and radiation tolerant electronics, as well as long life survivability are key capabilities required for future NASA missions. Current approaches to electronics for extreme environments focus on component level robustness and hardening. Compensation techniques such as bias cancellation circuitry have also been employed. However, current technology can only ensure very limited lifetime in extreme environments. Previous work presented a novel approach, based on evolvable hardware technology, which allows adaptive in-situ circuit redesign/reconfiguration during operation in extreme environments. This technology would complement material/device advancements and increase the mission capability to survive harsh environments. This work describes a new reconfigurable analog chip developed by JPL and SPAWAR that is targeted for extreme temperature and evolutionary hardware experiments. Being based on Gm-C technology, this chip can have its functionality tuned and adapted to extreme temperatures through voltage bias adjustment. This tuning process will be controlled by Evolutionary Algorithms. This paper presents details of the reconfigurable analog chip as well as a system level overview. Some early experiments are also described.

evolvable hardware↗
NASA NTRS2005

Reconfiguration of Analog Electronics for Extreme Environments

This paper argues in favor of adaptive reconfiguration as a technique to expand the operational envelope of analog electronics for extreme environments (EE). On a reconfigurable device, although component parameters change in EE, as long as devices still operate, albeit degraded, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. Laboratory demonstrations of this technique were performed by JPL in several independent experiments in which bulk CMOS reconfgurable devices were exposed to, and degraded by, high temperatures (approx.300 C) or radiation (300kRad TID), and then recovered by adaptive reconfiguration using evolutionary search algorithms.

evolutionary search algorithms↗
NASA NTRS2010

Reconfigurable Hardware for Compressing Hyperspectral Image Data

High-speed, low-power, reconfigurable electronic hardware has been developed to implement ICER-3D, an algorithm for compressing hyperspectral-image data. The algorithm and parts thereof have been the topics of several NASA Tech Briefs articles, including Context Modeler for Wavelet Compression of Hyperspectral Images (NPO-43239) and ICER-3D Hyperspectral Image Compression Software (NPO-43238), which appear elsewhere in this issue of NASA Tech Briefs. As described in more detail in those articles, the algorithm includes three main subalgorithms: one for computing wavelet transforms, one for context modeling, and one for entropy encoding. For the purpose of designing the hardware, these subalgorithms are treated as modules to be implemented efficiently in field-programmable gate arrays (FPGAs). The design takes advantage of industry- standard, commercially available FPGAs. The implementation targets the Xilinx Virtex II pro architecture, which has embedded PowerPC processor cores with flexible on-chip bus architecture. It incorporates an efficient parallel and pipelined architecture to compress the three-dimensional image data. The design provides for internal buffering to minimize intensive input/output operations while making efficient use of offchip memory. The design is scalable in that the subalgorithms are implemented as independent hardware modules that can be combined in parallel to increase throughput. The on-chip processor manages the overall operation of the compression system, including execution of the top-level control functions as well as scheduling, initiating, and monitoring processes. The design prototype has been demonstrated to be capable of compressing hyperspectral data at a rate of 4.5 megasamples per second at a conservative clock frequency of 50 MHz, with a potential for substantially greater throughput at a higher clock frequency. The power consumption of the prototype is less than 6.5 W. The reconfigurability (by means of reprogramming) of the FPGAs makes it possible to effectively alter the design to some extent to satisfy different requirements without adding hardware. The implementation could be easily propagated to future FPGA generations and/or to custom application-specific integrated circuits.

Aranki, Nazeeh↗
DOE OSTI2026

Tantalum oxide stabilized molybdenum-doped ruthenium oxide electrocatalysts for PEM water electrolysis

Proton exchange membrane (PEM) water electrolysis offers key advantages, including high current density, high efficiency, and compact system architecture for hydrogen production. However, its widespread implementation is limited by the scarcity and high cost of Ir-based anodic catalysts. Herein, we report an Ir-free electrocatalyst for the acidic oxygen evolution reaction (OER): tantalum oxide (TaO x )–coated molybdenum-doped RuO 2 (TaO x -MoRuO 2 ). The catalyst exhibits a low overpotential of 180 mV at 10 mA cm -2 and excellent durability, with a degradation rate of 0.034 mV h -1 over a 150-hour test at 50 mA cm -2 —surpassing other Ru-based catalysts evaluated under similar conditions. A PEM electrolyzer employing TaO x -MoRuO 2 as the anode maintained stable operation for 100 hours at 500 mA cm -2 . In conclusion, the TaO x coating layer suppresses Ru and Mo dissolution, thus enhancing their stability likely via interfacial electronic reconfiguration of Ru and Mo mediated by bridging oxygen atoms.

Durability↗
DOE OSTI2021

Toroidal polar topology in strained ferroelectric polymer

Polar topological texture has become an emerging research field for exotic phenomena and potential applications in reconfigurable electronic devices. Here, we report toroidal topological texture self-organized in a ferroelectric polymer, poly(vinylidene fluoride-ran-trifluoroethylene) [P(VDF-TrFE)], that exhibits concentric topology with anticoupled chiral domains. The interplay among the elastic, electric, and gradient energies results in continuous rotation and toroidal assembly of the polarization perpendicular to polymer chains, whereas relaxor behavior is induced along polymer chains. Such toroidal polar topology gives rise to periodic absorption of polarized far-infrared (FIR) waves, enabling the manipulation of the terahertz wave on a mesoscopic scale. Our observations should inform design principles for flexible ferroic materials toward complex topologies and provide opportunities for multistimuli conversions in flexible electronics.

36 MATERIALS SCIENCE↗
NASA NTRS2007

E-Textile Antennas for Space Environments

The ability to integrate antennas and other radio frequency (RF) devices into wearable systems is increasingly important as wireless voice, video, and data sources become ubiquitous. Consumer applications including mobile computing, communications, and entertainment, as well as military and space applications for integration of biotelemetry, detailed tracking information and status of handheld tools, devices and on-body inventories are driving forces for research into wearable antennas and other e-textile devices. Operational conditions for military and space applications of wireless systems are often such that antennas are a limiting factor in wireless performance. The changing antenna platform, i.e. the dynamic wearer, can detune and alter the radiation characteristics of e-textile antennas, making antenna element selection and design challenging. Antenna designs and systems that offer moderate bandwidth, perform well with flexure, and are electronically reconfigurable are ideally suited to wearable applications. Several antennas, shown in Figure 1, have been created using a NASA-developed process for e-textiles that show promise in being integrated into a robust wireless system for space-based applications. Preliminary characterization of the antennas with flexure indicates that antenna performance can be maintained, and that a combination of antenna design and placement are useful in creating robust designs. Additionally, through utilization of modern smart antenna techniques, even greater flexibility can be achieved since antenna performance can be adjusted in real-time to compensate for the antenna s changing environment.

Kennedy, Timothy F.↗
NASA NTRS2011

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Campbell, Kristy A.↗
NASA NTRS2012

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A.↗