The biasing effect of random bit errors on binary telemetry data
Random bit errors in pulse code modulated data during telemetry data processing
TELEMETRY↗
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The biasing effect of random bit errors on binary telemetry data.
Bias due to random bit errors that occur in PCM DATA during phases of operation of telemetry data processing system
BINARY DATA↗
507 Million Random Tunnel Diode Bits
This data set contains 507 million random bits collected from a tunnel diode.
random bits↗
Certified randomness using a trapped-ion quantum processor
Although quantum computers can perform a wide range of practically important tasks beyond the abilities of classical computers, realizing this potential remains a challenge. An example is to use an untrusted remote device to generate random bits that can be certified to contain a certain amount of entropy. Certified randomness has many applications but is impossible to achieve solely by classical computation. Here we demonstrate the generation of certifiably random bits using the 56-qubit Quantinuum H2-1 trapped-ion quantum computer accessed over the Internet. Our protocol leverages the classical hardness of recent random circuit sampling demonstrations: a client generates quantum ‘challenge’ circuits using a small randomness seed, sends them to an untrusted quantum server to execute and verifies the results of the server. We analyse the security of our protocol against a restricted class of realistic near-term adversaries. Using classical verification with measured combined sustained performance of 1.1 × 10 18 floating-point operations per second across multiple supercomputers, we certify 71,313 bits of entropy under this restricted adversary and additional assumptions. Our results demonstrate a step towards the practical applicability of present-day quantum computers.
computer science↗
Update On the Status of the FLUKA Monte Carlo Transport Code*
The FLUKA Monte Carlo transport code is a well-known simulation tool in High Energy Physics. FLUKA is a dynamic tool in the sense that it is being continually updated and improved by the authors. We review the progress achieved since the last CHEP Conference on the physics models, some technical improvements to the code and some recent applications. From the point of view of the physics, improvements have been made with the extension of PEANUT to higher energies for p, n, pi, pbar/nbar and for nbars down to the lowest energies, the addition of the online capability to evolve radioactive products and get subsequent dose rates, upgrading of the treatment of EM interactions with the elimination of the need to separately prepare preprocessed files. A new coherent photon scattering model, an updated treatment of the photo-electric effect, an improved pair production model, new photon cross sections from the LLNL Cullen database have been implemented. In the field of nucleus-- nucleus interactions the electromagnetic dissociation of heavy ions has been added along with the extension of the interaction models for some nuclide pairs to energies below 100 MeV/A using the BME approach, as well as the development of an improved QMD model for intermediate energies. Both DPMJET 2.53 and 3 remain available along with rQMD 2.4 for heavy ion interactions above 100 MeV/A. Technical improvements include the ability to use parentheses in setting up the combinatorial geometry, the introduction of pre-processor directives in the input stream. a new random number generator with full 64 bit randomness, new routines for mathematical special functions (adapted from SLATEC). Finally, work is progressing on the deployment of a user-friendly GUI input interface as well as a CAD-like geometry creation and visualization tool. On the application front, FLUKA has been used to extensively evaluate the potential space radiation effects on astronauts for future deep space missions, the activation dose for beam target areas, dose calculations for radiation therapy as well as being adapted for use in the simulation of events in the ALICE detector at the LHC.
Ferrari, A.↗
Testing and Performance Analysis of a 650 Mbps QPPM Modem for Free-space Laser Communications
The testing and performance of a prototype modem developed at NASA Lewis Research Center for high-speed free-space direct detection optical communications is described. The testing was performed under laboratory conditions using computer control with specially developed test equipment that simulates free-space link conditions. The modem employs quaternary pulse position modulation (QPPM) at 325 Megabits per second (Mbps) on two optical channels, which are multiplexed to transmit a single 650 Mbps data stream. The measured results indicate that the receiver's automatic gain control (AGC), phased-locked-loop slot clock recovery, digital symbol clock recovery, matched filtering, and maximum likelihood data recovery circuits were found to have only 1.5 dB combined implementation loss during bit-error-rate (BER) performance measurements. Pseudo random bit sequences and real-time high quality video sources were used to supply 650 Mbps and 325 Mbps data streams to the modem. Additional testing revealed that Doppler frequency shifting can be easily tracked by the receiver, that simulated pointing errors are readily compensated for by the AGC circuits, and that channel timing skew affects the BER performance in an expected manner. Overall, the needed technologies for a high-speed laser communications modem were demonstrated.
Mortensen, Dale J.↗
Plated wire random access memories
A program was conducted to construct 4096-work by 18-bit random access, NDRO-plated wire memory units. The memory units were subjected to comprehensive functional and environmental tests at the end-item level to verify comformance with the specified requirements. A technical description of the unit is given, along with acceptance test data sheets.
Gouldin, L. D.↗
Design, processing, and testing of lsi arrays for space station
The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.
Lile, W. R.↗
Improved bound on nonlinear quantum mechanics using a cryogenic radio frequency experiment
There are strong arguments that quantum mechanics may be nonlinear in its dynamics. A discovery of nonlinearity would hint at a novel understanding of the interplay between gravity and quantum field theory, for example. As such, experiments searching for potential nonlinear effects in the electromagnetic sector are important. Here, in this study, we outline such an experiment, consisting of a stream of random bits (which were generated using Rigetti’s Aspen-M-3 chip) as input to an rf signal generator coupled to a cryogenic detector. Projective measurements of the qubit state, which is originally prepared in an equal superposition, serve as the random binary output of a signal generator. Thereafter, spectral analysis of the rf detector would yield a detectable excess signal predicted to arise from such a nonlinear effect. A comparison between the projective measurements of the quantum bits vs the classical baseline showed no power excess. This sets a new limit on the electromagnetic nonlinearity parameter |ε| ⪅ 1.15 x 10 -12 , at a 90.0% confidence level. This is the most stringent limit on nonlinear quantum mechanics thus far and an improvement by nearly a factor of 50 over the previous experimental limit.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Design, processing, and testing of LSI arrays for space station
The development of a low power, high performance MOS 256-bit random assess memory with beam leads is discussed. Beam lead process development on silicon-on-sapphire (SOS) is also discussed, and initial electrical results on beam lead SOS TA5388 devices are presented. A comparison of the beam leaded 256-bit RAM (TA6567) layout is made with the non-beam leaded version (TA6473).
Schneider, W. C.↗
Evaluation of voice codecs for the Australian mobile satellite system
The evaluation procedure to choose a low bit rate voice coding algorithm is described for the Australian land mobile satellite system. The procedure is designed to assess both the inherent quality of the codec under 'normal' conditions and its robustness under 'severe' conditions. For the assessment, normal conditions were chosen to be random bit error rate with added background acoustic noise and the severe condition is designed to represent burst error conditions when mobile satellite channel suffers from signal fading due to roadside vegetation. The assessment is divided into two phases. First, a reduced set of conditions is used to determine a short list of candidate codecs for more extensive testing in the second phase. The first phase conditions include quality and robustness and codecs are ranked with a 60:40 weighting on the two. Second, the short listed codecs are assessed over a range of input voice levels, BERs, background noise conditions, and burst error distributions. Assessment is by subjective rating on a five level opinion scale and all results are then used to derive a weighted Mean Opinion Score using appropriate weights for each of the test conditions.
Bundrock, Tony↗
High-speed tunable generation of random number distributions using actuated perpendicular magnetic tunnel junctions
Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we demonstrate the tunability and quality of random number distributions generated by pMTJs operating at a frequency of 104 MHz. First, changing the pulse amplitude is used to systematically vary the probability bias. The variance of the resulting bitstreams closely matches the expected binomial distribution, demonstrating consistency with an underlying sequence of Bernoulli trials. Second, the quality of uniform distributions of 8-bit random numbers generated with a probability bias of 0.5 is considered. A reduced chi-square analysis of these data shows that only two XOR operations are sufficient to achieve this distribution with p-values greater than 0.05. Finally, we show that there is a correlation between long-term probability bias variations and pMTJ resistance. These findings suggest that variations in the characteristics of the pMTJ underlie the observed variation of probability bias. In conclusion, our results highlight the potential of stochastically actuated pMTJs for high-speed, tunable TRNG applications, showing the importance of the stability of pMTJ device characteristics in achieving reliable, long-term performance.
Magnetic tunnel junctions↗
Néel domain walls with bistable chirality in a perpendicularly magnetized ferrimagnetic insulator
Field-free spin-orbit torque-driven domain wall motion in magnetic thin films with perpendicular magnetic anisotropy (PMA) requires the domain walls to have Néel character. Conventionally, Néel domain walls are stabilized by the Dzyaloshinskii-Moriya interaction (DMI) in ultrathin films. Here, in a europium iron garnet thin film with PMA and an additional uniaxial in-plane anisotropy, we demonstrate two bistable Néel domain wall states in the absence of DMI, and the capability to toggle the wall states with an in-plane field pulse and consequently their directions of motion under a current pulse. We present a phase diagram for the bistable Néel domain wall states as a function of in-plane field pulse width and amplitude. By fitting the experimental data to an analytical model of Néel wall reversal through the nucleation and propagation of Bloch lines, we extract the length of the initial reversed domain wall segment and Bloch line nucleation energy barrier. Current-driven motion of in-plane anisotropy stabilized Néel walls is qualitatively different from that of DMI-stabilized ones owing to the different symmetry of the effective fields that stabilize the Néel configuration. Furthermore, we present a proof of principle demonstration for 2-bit random number generation based on the stochastic reversal of domain wall chirality. These results provide critical insight into the topological energy barrier of Bloch lines and identify paths towards domain wall-based memory and computing devices.
36 MATERIALS SCIENCE↗
Integration of multiple coinflip devices for high-quality random sampling
Artificial intelligence, scientific computing, and probabilistic computing use random sampling to approximate solutions to various problems, with larger models requiring a substantial quantity of random numbers. To generate the required vast quantity of random numbers at high rates, we explore so-called “coinflip” devices, which are stochastic microelectronic devices ideally capable of independently generating random bits with a tunable weight at a high rate. However, coinflip devices are inherently analog and demonstrate nonidealities, like temperature dependence and drift, that can introduce determinism into the outputs. We present important considerations for building systems of multiple coinflip devices to produce high-quality bitstreams with low error and little dependency on previous bits. Using tunnel diodes as coinflip devices, we implement a control loop to adapt to temperature dependence and generate fair bitstreams with each device. While this can lead to dependencies between bits in a single bitstream, we demonstrate that combining results generated in parallel with individual tunnel diodes can produce fair and unpredictable bitstreams. The suitability of these bitstreams for use in probabilistic computing is then demonstrated through a Monte Carlo approximation of π.
Taylor, Brady Garland [Sandia National Laboratorie↗
Transmission characteristics of split-phase PCM codes.
Split phase PCM code modulated carrier transmission characteristics determined for amplitude, phase and frequency shift keying, assuming random bit pattern and noncoherent modulation
Batson, B. H.↗
Plated wire memory subsystem
The work performed entailed the design, development, construction and testing of a 4000 word by 18 bit random access, NDRO plated wire memory for use in conjunction with a spacecraft imput/output unit and central processing unit. The primary design parameters, in order of importance, were high reliability, low power, volume and weight. A single memory unit, referred to as a qualification model, was delivered.
Reynolds, L.↗
Plated wire memory subsystem
The design, construction, and test history of a 4096 word by 18 bit random access NDRO Plated Wire Memory for use in conjunction with a spacecraft input/output and central processing unit is reported. A technical and functional description is given along with diagrams illustrating layout and systems operation. Test data is shown on the procedures and results of system level and memory stack testing, and hybrid circuit screening. A comparison of the most significant physical and performance characteristics of the memory unit versus the specified requirements is also included.
Carpenter, K. H.↗
Design, processing, and testing of LSI arrays for space station
The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bit random access memory (RAM) was reported. Previous success with the aluminum-gate current-sense version and a silicon-gate voltage-sense version led to the present effort to make a beam-leaded silicon-gate RAM. Some problems unique to the silicon-on-sapphire beam-lead process development are presented. Beam-leaded SOS TA5388 devices using a Si3N4 passivation layer were shown to have good electrical parameters.
Schneider, W. C.↗