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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Coherent potential theory of a random binary alloy Effects of scattering from two-sites clusters and off-diagonal randomness

Extension of the single-site coherent potential approximation for random binary alloys to include the effect of off-diagonal randomness and pair scattering. This extension is achieved by analyzing a one-band model of a random binary alloy in terms of a two-sites coherent potential approximation. Numerical results are presented for a number of different alloys. In the overlapping-band case, the presence of off-diagonal randomness is shown to modify the bandwidths to values larger than those obtained from the virtual-crystal approximation. A simple iterative procedure is described for overcoming the convergence difficulties in the split-band case. In this limit, the inclusion of pair scattering and off-diagonal randomness is found to lead to the appearance of structure in the density of states of the minority component band.

Moorjani, K.↗
NASA NTRS1976

Phase separation of metallic hydrogen-helium alloys

Calculations are presented for the thermodynamic functions and phase separation boundaries of solid metallic hydrogen helium alloys at temperatures between 0 K and 19,000 K and at pressures between 15 and 90 megabars. Expressions for the band structure energy of a randomly disordered alloy (including third order in the electron ion interaction) are derived and evaluated. Short and long range order are included by the quasi-chemical method, and lattice dynamics in the virtual crystal harmonic approximation. We conclude that at temperatures below 4,000 K there is complete phase separation of hydrogen helium alloys, and that a miscibility gap remains at the highest temperatures and pressures considered. The relevance of these results to models of the deep interior of Jupiter is briefly discussed.

Straus, D. M.↗
NASA NTRS1977

Phase separation of metallic hydrogen-helium alloys

Calculations are presented for the thermodynamic functions and phase-separation boundaries of solid metallic hydrogen-helium alloys at temperatures between zero and 19,000 K and at pressures between 15 and 90 Mbar. Expressions for the band-structure energy of a randomly disordered alloy (including third order in the electron-ion interaction) are derived and evaluated. Short- and long-range orders are included by the quasi-chemical method, and lattice dynamics in the virtual-crystal harmonic approximation. It is concluded that at temperatures below 4000 K, there is essentially complete phase separation of hydrogen-helium alloys and that a miscibility gap remains at the highest temperatures and pressures considered. The relevance of these results to models of the deep interior of Jupiter is briefly discussed.

Straus, D. M.↗
NASA NTRS1959

Experimental Investigation of Effects of Random Loading on the Fatigue Life of Notched Cantilever-Beam Specimens of 7075-T6 Aluminum Alloy

Results of random-loading fatigue tests on 125 notched cantilever-beam specimens and constant-amplitude fatigue tests on 46 similar specimens are presented in terms of the root-mean-square value of peak stresses. The results from the two sets of tests are compared on the basis of time to failure, where the results from the constant-amplitude tests are expressed in terms of an equivalent time to failure based on the natural period of vibration. Compared on this basis, failure at the lower stress levels occurred in a shorter time for the random loading than for the constant-amplitude loading, whereas at the higher stress levels failure occurred in the reverse order. A theoretical result for random loading is also presented and compared with the experimental results. The theoretical result shows good agreement with experiment for low values of stress but underestimates the time to failure at the higher stresses.

Fralich, Robert W.↗
NASA NTRS1988

Phase diagrams and microscopic structures of (Hg,Cd)Te, (Hg,Zn)Te, and (Cd,Zn)Te alloys

A cluster theory based on the quasi-chemical approximation has been applied to study the local correlation bond-length distribution, and phase diagrams of the II-VI pseudobinary alloys Hg(1 - x)Cd(x)Te, Hg(1 - x)Zn(x)Te, and Cd(1 - x)Zn(x)Te. The cluster energy is calculated by letting it relax in some effective alloy medium and then considering the contributions from the strain and chemical energies. Two different models are presented to simulate the alloy medium. While both models show that all three alloys have nearly random distributions, the signs of the local correlation prove to be sensitive to the alloy medium chosen for the energy calculation. Good agreement is found between experiment and the bond lengths and phase diagrams in both models.

Patrick, R. S.↗
NASA NTRS1994

Finite Element Analysis of the Random Response Suppression of Composite Panels at Elevated Temperatures using Shape Memory Alloy Fibers

A feasibility study on the use of shape memory alloys (SMA) for suppression of the random response of composite panels due to acoustic loads at elevated temperatures is presented. The constitutive relations for a composite lamina with embedded SMA fibers are developed. The finite element governing equations and the solution procedures for a composite plate subjected to combined acoustic and thermal loads are presented. Solutions include: 1) Critical buckling temperature; 2) Flat panel random response; 3) Thermal postbuckling deflection; 4) Random response of a thermally buckled panel. The preliminary results demonstrate that the SMA fibers can completely eliminate the thermal postbuckling deflection and significantly reduce the random response at elevated temperatures.

Turner, Travis L.↗
NASA NTRS1988

Modeling of mechanical properties of II-VI materials

This paper reviews some new developments in the theory of alloy correlations, order-disorder transitions, and solidus phase-transition curves. It is argued that semiconductor alloys are never truly random, and the various phenomena that drive deviations from random arrangements are introduced. Likely consequences of correlations on the ability to fine-tune the lattice match of epitaxial layers to substrates, on vacancy formation, on diffusion, and on vapor-phase crystal growth are discussed. Examples are chosen for the alloys Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Cd(1-y)Zn(y)Te, and CdSe(1-y)Te(y).

Sher, A.↗
NASA NTRS1988

The effect of 0.1 atomic percent zirconium on the cyclic oxidation behavior of beta-NiAl for 300 hours at 1200 C

The long time effect of 0.1 at percent Zr (0.2 wt percent Zr) on the cyclic oxidation behavior of hipped beta-NiAl was studied. Oxidation testing was performed in static air at 1200 C for up to 3000 one-hour exposure cycles. Specific weight change versus time data was modeled with the COSP computer program to analyze cyclic oxidation behavior. The Zr-free stoichiometric alloy oxidized and spalled randomly to bare metal between cycles at a rate high enough to deplete Al to a low enough level that oxidation breakaway took place as nonprotective NiO replaced the alpha-Al2O3/NiAl2O4 scale as the controlling oxide. The Zr minimized this severe type of spalling maintaining the protective alpha-Al2O3 scale even out to 3000 hours for the stoichiometric alloy with no significant Al depletion. A third beta-NiAl alloy containing 0.1 at percent Zr but with 10 percent less Al than the stoichiometric alloy was also tested and showed some depletion of Al, but the protective Al2O3/NiAl2O4 was still maintained to close to 2700 hours.

Barrett, C. A.↗
NASA NTRS1989

The effect of 0.1 atomic percent zirconium on the cyclic oxidation behavior of beta-NiAl for 3000 hours at 1200 C

The long time effect of 0.1 at percent Zr (0.2 wt percent Zr) on the cyclic oxidation behavior of hipped beta-NiAl was studied. Oxidation testing was performed in static air at 1200 C for up to 3000 one-hour exposure cycles. Specific weight change versus time data was modeled with the COSP computer program to analyze cyclic oxidation behavior. The Zr-free stoichiometric alloy oxidized and spalled randomly to bare metal between cycles at a rate high enough to deplete Al to a low enough level that oxidation breakaway took place as nonprotective NiO replaced the alpha-Al203/NiAl204 scale as the controlling oxide. The Zr minimized this severe type of spalling maintaining the protective alpha-Al203 scale even out to 3000 hours for the stoichiometric alloy with no significant Al depletion. A third beta-NiAl alloy containing 0.1 at percent Zr but with 10 percent less Al than the stoichiometric alloy was also tested and showed some depletion of Al, but the protective Al203/NiAl204 was still maintained to close to 2700 hours.

Barrett, C. A.↗
NASA NTRS1987

Structure-property relationships in semiconductor alloys

It is presently noted that the atomic distribution of constituents in semiconductor alloys is never truly random, since there are always interactions giving rise to correlations whose degree and character depend on which interactions are dominant, as well as on the growth conditions. Although most of the interactions that can be expected to generate correlations have been identified, the fact that not all have been thus far treated exhaustively leaves several details unclear. A characterization of the primary effects in general terms is accordingly achieved.

Sher, A.↗
NASA NTRS2013

Empirical Study of the Multiaxial, Thermomechanical Behavior of NiTiHf Shape Memory Alloys

An empirical study was conducted to characterize the multiaxial, thermomechanical responses of new high temperature NiTiHf alloys. The experimentation included loading thin walled tube Ni(sub 50.3)Ti(sub 29.7)Hf(sub 20) alloy samples along both proportional and nonproportional axial-torsion paths at different temperatures while measuring surface strains using stereo digital image correlation. A Ni(sub 50.3)Ti(sub 33.7)Hf(sub 16) alloy was also studied in tension and compression to document the effect of slightly depleting the Hf content on the constitutive responses of NiTiHf alloys. Samples of both alloys were made from nearly texture free polycrystalline material processed by hot extrusion. Analysis of the data shows that very small changes in composition significantly alter NiTiHf alloy properties, as the austenite finish (Af) temperature of the 16-at Hf alloy was found to be approximately 60 C less than the 20-at Hf alloy (approximately 120 C vs. 180 C). In addition, the 16-at Hf alloy exhibited smaller compressive transformation strains (2 vs. 2.5 percent). Multi-axial characterization of the 20-at % Hf alloy showed that while the random polycrystal transformation strains in tension (4 percent) and compression (2.5 percent) are modest in comparison with binary NiTi (6 percent, 4 percent), the torsion performance is superior (7 vs. 4 shear strain width to the pseudoelastic plateau).

tensile deformation↗
NASA NTRS1993

Nonlinear analyses of composite aerospace structures in sonic fatigue

This report summarizes the semiannual research progress, accomplishments, and future plans performed under the NASA Langley Research Center Grant No. NAG-1-1358. The primary research effort of this project is the development of analytical methods for the prediction of nonlinear random response of composite aerospace structures subjected to combined acoustic and thermal loads. The progress, accomplishments, and future plates on four sonic fatigue research topics are described. The sonic fatigue design and passive control of random response of shape memory alloy hybrid composites presented in section 4, which is suited especially for HSCT, is a new initiative.

Mei, Chuh↗
NASA NTRS2024

Effects of Oxide Dispersion on Failure Modes in an Additively Manufactured Superalloy

Additive manufacturing opens new paths for introducing oxide particles into superalloys, to potentially provide oxide dispersion strengthening (ODS) at high temperatures. This provides opportunities to study how such dispersions can influence failure modes for a given superalloy, after nearly identical material processing paths. The objective of this study was to compare monotonic failure modes for additively manufactured superalloys with versus without an introduced oxide dispersion. The superalloy for each case was produced by laser powder bed fusion additive manufacturing. Specimens were subsequently given consistent thermal treatment paths and then tested in tensile and creep tests at varied temperatures. Failure modes were then compared. Additively manufactured NiCrAl without ODS had randomly oriented equiaxed grains while this alloy with 0.25 wt% Y 2 O 3 ODS additions had elongated [001] oriented grains in the build direction. Material made without ODS (“No-ODS”) was nearly completely single phase gamma, while ODS additions resulted in gamma, chromium carbide, and Y-Al-Cr oxide phases, with carbide and oxide phases contents estimated at no more than 13 and 1 vol%, respectively. Compared to No-ODS, material made with ODS had higher tensile strengths at room, 760 and 1093 °C. The elongation of ODS material was lower than No-ODS at room temperature, but higher at 760 °C. At 1093 °C ODS material had higher elongation than No-ODS when tested in the build direction, however elongation was lower for ODS material in the transverse direction at 1093 °C. Creep rupture strain, life, and area reduction at 760 and 1093 °C were all much higher for ODS material compared to No-ODS; 760 °C rupture life was nearly 100 times longer for ODS material. The presence of Y in the ODS material significantly improved oxidation resistance.

supperalloys↗
NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗