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The Radiation Tolerant Displays project aims to develop a reference design for a display system that can withstand and mitigate the effects of radiation in deep space. Radiation Tolerant Displays seeks to deliver on this goal through a collaboration across industry and agency and by building upon the Mars Campaign Office’s (MCO) Project Polaris Radiation Tolerant Displays effort.
Space Electronics needs Radiation Tolerance or hardness to withstand the harsh space environment: high-energy particles can change the state of the electronics or puncture transistors making them disfunctional. This viewgraph document reviews the use of CMOS Ultra Low Power Radiation Tolerant circuits for NASA's electronic requirements.
The Radiation Tolerant, FPGA-based SmallSat Computer System (RadSat) computing platform exploits a commercial off-the-shelf (COTS) Field Programmable Gate Array (FPGA) with real-time partial reconfiguration to provide increased performance, power efficiency and radiation tolerance at a fraction of the cost of existing radiation hardened computing solutions. This technology is ideal for small spacecraft that require state-of-the-art on-board processing in harsh radiation environments but where using radiation hardened processors is cost prohibitive.
Current and future near-Earth and deep space exploration programs and space defense programs require the development of robust intra-spacecraft serial data transfer electronics that must be reconfigurable, fault-tolerant, and have the ability to operate effectively for long periods of time in harsh environmental conditions. Existing data transfer systems based on state-of-the-art serial data transfer protocols or passive backplanes are slow, power-hungry, and poorly reconfigurable. They provide limited expandability and poor tolerance to radiation effects and total ionizing dose (TID) in particular, which presents harmful threats to modern submicron electronics. This novel approach is based on a standard library of differential cells tolerant to TID, and patented, multi-level serial interface architecture that ensures the reliable operation of serial interconnects without application of a data-strobe or other encoding techniques. This proprietary, high-speed differential interface presents a lowpower solution fully compatible with the SpaceWire (SW) protocol. It replaces a dual data-strobe link with two identical independent data channels, thus improving the system s tolerance to harsh environments through additional double redundancy. Each channel incorporates an automatic line integrity control circuitry that delivers error signals in case of broken or shorted lines.
The Radiation Tolerant Intelligent Memory Stack (RTIMS), suitable for both geostationary and low earth orbit missions, has been developed. The memory module is fully functional and undergoing environmental and radiation characterization. A self-contained flight-like module is expected to be completed in 2006. RTIMS provides reconfigurable circuitry and 2 gigabits of error corrected or 1 gigabit of triple redundant digital memory in a small package. RTIMS utilizes circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuitries are stacked into a module of 42.7mm x 42.7mm x 13.00mm. Triple module redundancy, current limiting, configuration scrubbing, and single event function interrupt detection are employed to mitigate radiation effects. The mitigation techniques significantly simplify system design. RTIMS is well suited for deployment in real-time data processing, reconfigurable computing, and memory intensive applications.
The acute radiation syndrome in man is clinically bounded by death at high dose levels and by the prodromal syndrome of untoward physiological effects at minimal levels of clinically effective exposure. As in lower animals, man experiences principally three acute modes of death from radiation exposure (Bond et al., 1965). These are known collectively as the lethal radiation syndromes: central nervous system death, gastrointestinal death, and hematopoietic death. The effect of multiple exposure on lethality, the effect of multiple exposure on hematopoietic recovery, and quantitative aspects of cell and tissue repair are discussed.
This paper discusses the in-situ characterization tools designed to assess radiation tolerance and elemental migration in perovskite materials. With the increasing use of perovskites in various technological applications, understanding their response to radiation exposure is paramount. Ion Beam Induced Charge (IBIC) emerges as a powerful tool for investigating the radiation tolerance of perovskites at the microscale. By employing focused ion beams, IBIC allows for the spatial mapping of charge carriers, offering insights into the material's electronic response to radiation-induced defects. This technique enables researchers to pinpoint areas of enhanced or suppressed charge collection, providing valuable information on the perovskite's intrinsic properties under irradiation. Rutherford Backscattering Spectrometry (RBS) complements the study by offering a quantitative analysis of elemental migration in perovskite materials. Through the precise measurement of backscattered ions, RBS provides a detailed understanding of the elemental composition and distribution within the perovskite lattice after radiation exposure. The integration of IBIC and RBS techniques in in-situ experiments enhances the comprehensive characterization of radiation effects on perovskites.
Extensive radiation testing of vertical junction (VJ) solar cells demonstrated a radiation tolerance better than both planar silicon cells and at least one type of (AlGa)As-GaAs cell. Due to tradeoffs between short circuit current and open circuit voltage, the end of life (10 to the 16th power 1 MeV electrons/sq cm) maximum power point is nearly independent of bulk resistivity between 2 and 10 ohm cm, increases slightly with increasing wafer thickness between 3 and 11 mils, and increases slightly with increasing groove depth between 1 and 3 mils.
Research work in the providing radiation tolerant electronics to NASA and the commercial sector is reported herein. There are four major sections to this report: (1) Special purpose VLSI technology section discusses the status of the VLSI projects as well as the new background technologies that have been developed; (2) Lossless data compression results provide the background and direction of new data compression pursued under this grant; (3) Commercial technology transfer presents an itemization of the commercial technology transfer; and (4) Delivery of VLSI to the Government is a solution and progress report that shows how the Government and Government contractors are gaining access to the technology that has been developed by the MRC.
Results of clinical studies of radiation effects on man are used to evaluate space radiation hazards encountered during manned space travel. Considered are effects of photons as well as of mixed fission neutrons and gamma irradiations in establishing body radiosensitivity and tolerance levels. Upper and lower dose-response-time relations for acute radiation syndromes in patients indicate that man is more than sufficiently radioresistant to make the risks of an early radiation effect during one short space mission intangibly small in relation to the other nonradiation risks involved.
A document discusses power converters suitable for space use that meet the DSCC MIL-PRF-38534 Appendix G radiation hardness level P classification. A method for qualifying commercially produced electronic parts for DC-DC converters per the Defense Supply Center Columbus (DSCC) radiation hardened assurance requirements was developed. Development and compliance testing of standard hybrid converters suitable for space use were completed for missions with total dose radiation requirements of up to 30 kRad. This innovation provides the same overall performance as standard hybrid converters, but includes assurance of radiation- tolerant design through components and design compliance testing. This availability of design-certified radiation-tolerant converters can significantly reduce total cost and delivery time for power converters for space applications that fit the appropriate DSCC classification (30 kRad).
The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.
The CMS experiment’s High Granularity Calorimeter (HGCAL) upgrade will replace CMS’s existing endcap calorimeters in preparation for the High Luminosity LHC. To effectively use over 6 million channels of this “imaging”calorimeter, CMS has developed two novel Endcap Concentrator (ECON) ASICs to perform data compression/selection on detector. The ECON-D ASIC operates on the 750kHz data path, and the ECON-T ASIC on the 40MHz trigger path. These 65 nm CMOS ASICs are radiation tolerant to 200 Mrad and low power, operating at less than 2.5 mW/channel. The first full-functionality prototype ECONs were produced and characterized in 2021-23, and an initial engineering run was performed in 2024. ECON-D radiation testing for the engineering run revealed that the chip’s internal SRAMs produce intermittent read errors for a non-negligible fraction of chips. Further investigation indicated that the SRAM performance is highly sensitive to the exact parameters of the CMOS fabrication process. To both study this process sensitivity and mitigate SRAM performance issues, twenty ECON wafers were produced in 2025 with a range of doping concentrations designed to tune the underlying transistor threshold voltage by 0%, 5%, 10%, and 15% from nominal. This talk will present first measurements of ECON-D performance, power consumption, and radiation tolerance for these four variations of CMOS process.
In today's budgetary environment, there is significant interest within the National Aeronautics and Space Administration (NASA) to enable small robotic science missions that can be executed faster and cheaper than previous larger missions. To help achieve this, focus has shifted from using exclusively radiation-tolerant or radiation-hardened parts to using more commercial-off-the-shelf (COTS) components for NASA small satellite missions that can last at least one year in orbit. However, there are some portions of a spacecraft's avionics, such as the Command and Data Handling (C&DH) subsystem and the Power System Electronics (PSE) that need to have a higher level of reliability that goes beyond what is attainable with currently available COTS parts. While there are a number of COTS components that can withstand a total ionizing dose (TID) of tens or hundreds of kilorads, there is still a great deal of concern about tolerance to and mitigation of single-event effects (SEE).
Neuromorphic processors are designed to execute Deep Neural Networks (DNNs) at very high speed using only a fraction of the electrical power needed to run a DNN on a traditional CPU or GPU. This unique capability makes Neuromorphic processors a prime candidate for space systems, where advanced computational tasks like image analysis, depth map reconstruction, or rover control need to be executed in a power-starved environment. In contrast to the growing number of applications of Neuromorphic processors in smart phones, the automotive and robotics domain, the space environment is unforgiving because of extreme temperatures and high levels of radiation. Any space system, operating beyond LEO requires computing hardware that is resilient against radiation effects. However, Neuromorphic processors have not yet been designed or tested for their radiation tolerance. In this report, we consider traditional methods of detection of radiation events and mitigation via redundancy and gauge their effectiveness on DNNs. In contrast to traditional flight software, however, neural networks represent a statistical algorithm, which might affect its resilience against radiation events. We will focus on the analysis of the tolerance of DNNs with respect to radiation events and discuss techniques to detect radiation hits using on-chip triple modular redundancy (TMR) on an Intel Loihi neuromorphic processor and to mitigate radiation damage. We describe an architecture for on-chip TMR for the Intel Loihi and present results of initial experiments.
The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.
Current design practices are described and future trends in spacecraft electronics which are likely to alter traditional approaches are discussed. A summary of radiation effects and radiation tolerance requirements typically levied on spacecraft designs is provided. Methods of dealing with radiation and testability issues are considered.
The total dose performance of the antifuse FPGA for space applications is summarized. Optimization of the radiation tolerance in the fabless model is the main theme. Mechanisms to explain the variation in different products are discussed.