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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

1987 Annual Conference on Nuclear and Space Radiation Effects, Snowmass Village, CO, July 28-31, 1987, Proceedings

Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, single-event phenomena, temperature and field effects, modeling and characterization of radiation effects, IC radiation effects and hardening, and EMP/SGEMP/IEMP phenomena. Also considered are: dosimetry/energy-dependent effects, sensors in and for radiation environments, spacecraft charging and space radiation effects, radiation effects and devices, radiation effects on isolation technologies, and hardness assurance and testing techniques.

Source record↗
NASA NTRS1989

1989 IEEE Annual Conference on Nuclear and Space Radiation Effects, 26th, Marco Island, FL, July 25-29, 1989, Proceedings. Part 1

Various papers on nuclear science are presented. The general topics addressed include: basic mechanics of radiation effects, dosimetry and energy-dependent effects, hardness assurance and testing techniques, spacecraft charging and space radiation effects, EMP/SGEMP/IEMP phenomena, device radiation effects and hardening, radiation effects on isolation technologies, IC radiation effects and hardening, and single-event phenomena.

Ochoa, Agustin, Jr.↗
NASA NTRS1988

1988 IEEE Annual Conference on Nuclear and Space Radiation Effects, 25th, Portland, OR, July 12-15, 1988, Proceedings

The effects of nuclear and space radiation on the performance of electronic devices are discussed in reviews and reports of recent investigations. Topics addressed include the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, sensors in and for radiation environments, EMP/SGEMP/IEMP phenomena, radiation effects on isolation technologies, and spacecraft charging and space radiation effects. Consideration is given to device radiation effects and hardening, hardness assurance and testing techniques, IC radiation effects and hardening, and single-event phenomena.

Coakley, Peter G.↗
NASA NTRS1986

1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings

The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.

Ellis, Thomas D.↗
NASA NTRS2015

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.

single event effects↗
DOE OSTI2024

Observational Constraints on the Spatial Effect of Greenness and Canopy Cover on Urban Heat in a Major Midlatitude City

Abstract Urban heat stress is a critical issue, particularly in cities where dense infrastructure and limited green space exacerbate temperature extremes. This study investigates the impact of greenery (EVI2), canopy cover (CC), impervious cover (IC), and water bodies on heat index in Chicago using high‐resolution data from the Heat Watch campaign. We find that EVI2, CC and proximity to water body significantly reduce heat while IC increases heat, particularly in the afternoon when solar radiation is intense. Additionally, the effective radius that land cover impacts heat is smaller in the afternoon. The combined effect analysis indicates that enhancing total greenness, not just canopy cover, is the most effective strategy to reduce heat. This study underscores the importance of strategic vegetation management, highlighting the critical role of integrated approaches in reducing urban heat.

Lee, Jangho↗
NASA NTRS1991

Long-term prediction test procedure for most ICs, based on linear response theory

Experimentally, thermal annealing is known to be a factor which enables a number of different integrated circuits (IC's) to recover their operating characteristics after suffering radiation damage in the space radiation environment; thus, decreasing and limiting long term cumulative total-dose effects. This annealing is also known to be accelerated at elevated temperatures both during and after irradiation. Linear response theory (LRT) was applied, and a linear response function (LRF) to predict the radiation/annealing response of sensitive parameters of IC's for long term (several months or years) exposure to the space radiation environment were constructed. Compressing the annealing process from several years in orbit to just a few hours or days in the laboratory is achieved by subjecting the IC to elevated temperatures or by increasing the typical spaceflight dose rate by several orders of magnitude for simultaneous radiation/annealing only. The accomplishments are as follows: (1) the test procedure to make predictions of the radiation response was developed; (2) the calculation of the shift in the threshold potential due to the charge distribution in the oxide was written; (3) electron tunneling processes from the bulk Si to the oxide region in an MOS IC were estimated; (4) in order to connect the experimental annealing data to the theoretical model, constants of the model of the basic annealing process were established; (5) experimental data obtained at elevated temperatures were analyzed; (6) time compression and reliability of predictions for the long term region were shown; (7) a method to compress test time and to make predictions of response for the nonlinear region was proposed; and (8) nonlinearity of the LRF with respect to log(t) was calculated theoretically from a model.

Litovchenko, V.↗
DOE OSTI2021

Constraints on MeV dark matter and primordial black holes: Inverse Compton signals at the SKA

Here we investigate the possibilities for probing MeV dark matter (DM) particles and primordial black holes (PBHs) (for masses ~ 10 15 –10 17 g) at the upcoming radio telescope SKA, using photon signals from the Inverse Compton (IC) effect within a galactic halo. Pair-annihilation or decay of MeV DM particles (into e + e - pairs) or Hawking radiation from a population of PBHs generates mildly relativistic e ± which can lead to radio signals through the IC scattering on low energy cosmic microwave background (CMB) photons. We study the ability of SKA to detect such signals coming from nearby ultra-faint dwarf galaxies Segue I and Ursa Major II as well as the globular cluster ω-cen and the Coma cluster. We find that with ~ 100 hours of observation, the SKA improves the Planck constraints on the DM annihilation/decay rate and the PBH abundance for masses in the range ~ 1 to few tens of MeV and above 10 15 to 10 17 g, respectively. Importantly, the SKA limits are independent of the assumed magnetic fields within the galaxies. Previously allowed regions of diffusion parameters of MeV electrons inside a dwarf galaxy that give rise to observable signals at the SKA are also excluded. For objects like dwarf galaxies, predicted SKA constraints depend on both the DM and diffusion parameters. Independent observations in different frequency bands, e.g., radio and γ-ray frequencies, may break this degeneracy and thus enable one to constrain the combined parameter space of DM and diffusion. However, the constraints are independent of diffusion parameters for galaxy clusters such as Coma.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2005

PDSOI and Radiation Effects: An Overview

Bulk silicon substrates are a common characteristic of nearly all commercial, Complementary Metal-Oxide-Semiconductor (CMOS), integrated circuits. These devices operate well on Earth, but are not so well received in the space environment. An alternative to bulk CMOS is the Silicon-On-Insulator (SOI), in which a &electric isolates the device layer from the substrate. SO1 behavior in the space environment has certain inherent advantages over bulk, a primary factor in its long-time appeal to space-flight IC designers. The discussion will investigate the behavior of the Partially-Depleted SO1 (PDSOI) device with respect to some of the more common space radiation effects: Total Ionized Dose (TID), Single-Event Upsets (SEUs), and Single-Event Latchup (SEL). Test and simulation results from the literature, bulk and epitaxial comparisons facilitate reinforcement of PDSOI radiation characteristics.

Forgione, Joshua B.↗
NASA NTRSDate not supplied

Progress Towards SiC ASICs for Extreme Temperature and Radiation Environments

This presentation describes development and demonstrations of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. Silicon carbide (SiC) junction field effect transistor-resistor (JFET-R) ICs fabricated by NASA Glenn Research Center with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient, 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C temperature span) without significant change in signal (input /output) or power supply voltages. While the operating frequency and functional complexity is far below silicon-based ICs, these SiC application specific ICs (ASICs) are nevertheless becoming capable of providing unique and advantageous harsh-environment circuit functionality without cooling/sheltering overhead. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards manufacture, a majority of processing steps to realize the next SiC JFET-R IC prototype wafer run have been outsourced to commercial foundry. It is expected that further upscaling combined with technology transfer to commercial production will lower investment and risk barriers to useful application deployment.

high temperature↗
NASA NTRS2019

Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Lauenstein, Jean-Marie↗
NASA NTRS1988

The design of radiation-hardened ICs for space - A compendium of approaches

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Kerns, Sherra E.↗
DOE OSTI2021

Synchrotron self-Compton radiation from magnetically dominated turbulent plasmas in relativistic jets

ABSTRACT Relativistic jets launched by rotating black holes are powerful emitters of non-thermal radiation. Extraction of the rotational energy via electromagnetic stresses produces magnetically dominated jets, which may become turbulent. Studies of magnetically dominated plasma turbulence from first principles show that most of the accelerated particles have small pitch angles, i.e. the particle velocity is nearly aligned with the local magnetic field. We examine synchrotron self-Compton radiation from anisotropic particles in the fast cooling regime. The small pitch angles reduce the synchrotron cooling rate and promote the role of inverse Compton (IC) cooling, which can occur in two different regimes. In the Thomson regime, both synchrotron and IC components have soft spectra, νFν ∝ ν1/2. In the Klein–Nishina regime, synchrotron radiation has a hard spectrum, typically νFν ∝ ν, over a broad range of frequencies. Our results have implications for the modelling of BL Lacertae objects (BL Lacs) and gamma-ray bursts (GRBs). BL Lacs produce soft synchrotron and IC spectra, as expected when Klein–Nishina effects are minor. The observed synchrotron and IC luminosities are typically comparable, which indicates a moderate anisotropy with pitch angles θ ≳ 0.1. Rare orphan gamma-ray flares may be produced when θ ≪ 0.1. The hard spectra of GRBs may be consistent with synchrotron radiation when the emitting particles are IC cooling in the Klein–Nishina regime, as expected for pitch angles θ ∼ 0.1. Blazar and GRB spectra can be explained by turbulent jets with a similar electron plasma magnetization parameter, σe ∼ 104, which for electron–proton plasmas corresponds to an overall magnetization σ = (me/mp)σe ∼ 10.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS2005

Radiation Testing and Evaluation Issues for Modern Integrated Circuits

Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.

LaBel, Kenneth A.↗
DOE OSTI2022

On the perturbation effect and LET dependence of beam quality correction factors in carbon ion beams

Background: In a recent study, we reported beam quality correction factors, f Q , in carbon ion beams using Monte Carlo (MC) methods for a cylindrical and a parallel-plate ionization chamber (IC). A non-negligible perturbation effect was observed; however, the magnitude of the perturbation correction due to the specific IC subcomponents was not included. Furthermore, the stopping power data presented in the International Commission on Radiation Units and Measurements (ICRU) report 73 were used, whereas the latest stopping power data have been reported in the ICRU report 90. Purpose: The aim of this study was to extend our previous work by computing f Q correction factors using the ICRU 90 stopping power data and by reporting IC-specific perturbation correction factors. Possible energy or linear energy transfer (LET) dependence of the f Q correction factor was investigated by simulating both pristine beams and spread-out Bragg peaks (SOBPs). Methods: The TOol for PArticle Simulation (TOPAS)/GEANT4 MC code was used in this study. A 30 × 30 × 50 cm 3 water phantom was simulated with a uniform 10 × 10 cm 2 parallel beam incident on the surface. A Farmer-type cylindrical IC (Exradin A12) and two parallel-plate ICs (Exradin P11 and A11) were simulated in TOPAS using the manufacturer-provided geometrical drawings. The f Q correction factor was calculated in pristine carbon ion beams in the 150–450 MeV/u energy range at 2 cm depth and in the middle of the flat region of four SOBPs. The k Q correction factor was calculated by simulating the f Qo correction factor in a 60 Co beam at 5 cm depth. The perturbation correction factors due to the presence of the individual IC subcomponents, such as the displacement effect in the air cavity, collecting electrode, chamber wall, and chamber stem, were calculated at 2 cm depth for monoenergetic beams only. Additionally, the mean dose-averaged and track-averaged LET was calculated at the depths at which the f Q was calculated. Results: The ICRU 90 f Q correction factors were reported. The p dis correction factor was found to be significant for the cylindrical IC with magnitudes up to 1.70%. The individual perturbation corrections for the parallel-plate ICs were <1.0% except for the A11 p cel correction at the lowest energy. The f Q correction for the P11 IC exhibited an energy dependence of >1.00% and displayed differences up to 0.87% between pristine beams and SOBPs. Conversely, the f Q for A11 and A12 displayed a minimal energy dependence of <0.50%. The energy dependence was found to manifest in the LET dependence for the P11 IC. A statistically significant LET dependence was found only for the P11 IC in pristine beams only with a magnitude of <1.10%. Conclusions: The perturbation and k Q correction factor should be calculated for the specific IC to be used in carbon ion beam reference dosimetry as a function of beam quality.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
NASA NTRS1986

Prototyping and implementing flight qualifiable semicustom CMOS P-well bulk integrated circuits in the JPL environment

Presently, there are many difficulties associated with implementing application specific custom or semi-custom (standard cell based) integrated circuits (ICs) into JPL flight projects. One of the primary difficulties is developing prototype semi-custom integrated circuits for use and evaluation in engineering prototype flight hardware. The prototype semi-custom ICs must be extremely cost-effective and yet still representative of flight qualifiable versions of the design. A second difficulty is encountered in the transport of the design from engineering prototype quality to flight quality. Normally, flight quality integrated circuits have stringent quality standards, must be radiation resistant and should consume minimal power. It is often not necessary or cost effective, however, to impose such stringent quality standards on engineering models developed for systems analysis in controlled lab environments. This article presents work originally initiated for ground based applications that also addresses these two problems. Furthermore, this article suggests a method that has been shown successful in prototyping flight quality semi-custom ICs through the Metal Oxide Semiconductor Implementation Service (MOSIS) program run by the University of Southern California's Information Sciences Institute. The method has been used successfully to design and fabricate through the MOSIS three different semi-custom prototype CMOS p-well chips. The three designs make use of the work presented and were designed consistent with design techniques and structures that are flight qualifiable, allowing one hour transfer of the design from engineering model status to flight qualifiable foundry-ready status through methods outlined in this article.

Olson, E. M.↗