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Results for “quantum information with solid state qubits”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Engineering, Control, and Longitudinal Readout of Floquet Qubits

We discuss how properties of time-periodic Hamiltonians can be exploited to increase the dephasing time of qubits and to design protected one- and two-qubit gates. Recently, Huang et al. [Phys. Rev. Applied 15, 034065 (2021)] have shown that Floquet states offer a manifold of working points with dynamical protection larger than the few, usual, static sweet spots. Here, we show how Floquet theory, often used on systems with a single drive tone, can be used to describe approaches to robustly control Floquet qubits in the presence of multiple commensurate drive tones. Using this formulation, we introduce a longitudinal readout protocol to measure the Floquet qubit without the need of first adiabatically mapping the Floquet states back to the static qubit states, resulting in a significant speedup in the measurement time of the Floquet qubit. The analytical approach developed here can be applied to any Hamiltonian involving a small number of distinct drive tones, typical in the study of standard parametric gates for qubits outside of the rotating-wave approximation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Quantum limits of superconducting-photonic links and their extension to millimeter waves

Photonic addressing of superconducting circuits has been proposed to overcome wiring complexity and heat-load challenges. However, such superconducting-photonic links suffer from an efficiency-noise trade-off that limits scalability. This trade-off arises because increasing power conversion efficiency entails reducing optical power, which makes the converted signal susceptible to shot noise. We analyze this trade-off and find that the laser-driven qubit gate infidelity scales inversely with the number of photons used. While methods such as nonlinear detection or squeezed light could mitigate this effect, we consider generating higher-frequency electrical signals, such as millimeter waves (100 GHz), using laser light. At these higher frequencies, circuits have higher operating temperatures and cooling power budgets and alleviate constraints posed by the trade-off. Therefore, we demonstrate an optically driven cryogenic millimeter-wave source with a maximum power efficiency of 8 ×10 −5 that can generate a maximum of 0.7 μ⁢W of 80 GHz power, with a 1200-thermal-photon equivalent of added noise at 4K. Using this source, we perform frequency-domain spectroscopy of superconducting NbTiN resonators at 80–90 GHz. Our results show a promising approach to lessen the efficiency-noise constraints on superconducting-photonic links, while leveraging the benefits of photonic signal delivery. Further optimization of power efficiency and noise at high frequencies could make scalable photonic control of superconducting qubits viable at temperatures exceeding 1K.

Optoelectronics↗
DOE OSTI2022

Stabilizing and Improving Qubit Coherence by Engineering the Noise Spectrum of Two-Level Systems

Superconducting circuits are a leading platform for quantum computing. However, their coherence times are still limited and exhibit temporal fluctuations. Those phenomena are often attributed to the coupling between qubits and material defects that can be well described as an ensemble of two-level systems (TLSs). Among them, charge fluctuators inside amorphous oxide layers contribute to both low-frequency 1 / f charge noise and high-frequency dielectric loss, causing fast qubit dephasing and relaxation. Moreover, spectral diffusion from mutual TLS interactions varies the noise amplitude over time, fluctuating the qubit lifetime. Here, we propose to mitigate those harmful effects by engineering the relevant TLS noise spectral densities. Specifically, our protocols smooth the high-frequency noise spectrum and suppress the low-frequency noise amplitude via depolarizing and dephasing the TLSs, respectively. As a result, we predict a drastic stabilization in qubit lifetime and an increase in qubit pure dephasing time. Our detailed analysis of feasible experimental implementations shows that the improvement is not compromised by spurious coupling from the applied noise to the qubit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Gate-defined wires in twisted bilayer graphene: From electrical detection of intervalley coherence to internally engineered Majorana modes

Twisted bilayer graphene (TBG) realizes a highly tunable, strongly interacting system featuring superconductivity and various correlated insulating states. We establish gate-defined wires in TBG with proximity-induced spin-orbit coupling as (i) a tool for revealing the nature of correlated insulators and (ii) a platform for Majorana-based topological qubits. We show that the band structure of a gate-defined wire immersed in an intervalley coherent correlated insulator inherits electrically detectable fingerprints of symmetry breaking native to the latter. Surrounding the wire by a superconducting TBG region on one side and an intervalley coherent correlated insulator on the other further enables the formation of Majorana zero modes—possibly even at zero magnetic field depending on the precise symmetry-breaking order present. Our proposal not only introduces a highly gate-tunable topological qubit medium relying on internally generated proximity effects but can also shed light on the Cooper-pairing mechanism in TBG.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quantum Computer-Aided Design: Digital Quantum Simulation of Quantum Processors

With the increasing size of quantum processors, submodules that constitute the processor hardware will become too large to accurately simulate on a classical computer. Therefore, one would soon have to fabricate and test each new design primitive and parameter choice in time-consuming coordination between design, fabrication, and experimental validation. Here we show how one can design and test the performance of next-generation quantum hardware—by using existing quantum computers. Focusing on superconducting transmon processors as a prominent hardware platform, we compute the static and dynamic properties of individual and coupled transmons. We show how the energy spectra of transmons can be obtained by variational hybrid quantum-classical algorithms that are well suited for near-term noisy quantum computers. In addition, single- and two-qubit gate simulations are demonstrated via Suzuki-Trotter decomposition. Our methods pave a promising way towards designing candidate quantum processors when the demands of calculating submodule properties exceed the capabilities of classical computing resources.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Positive- and negative-frequency noise from an ensemble of two-level fluctuators

The analysis of charge noise based on the Bloch-Redfield treatment of an ensemble of dissipative two-level fluctuators generally results in a violation of the fluctuation-dissipation theorem. The standard Markov approximation (when applied to the two-level fluctuators coupled to a bath) can be identified as the main origin of this failure. The resulting decoherence rates only involve the bath response at the fluctuator frequency, and thus completely neglect the effects of frequency broadening. A systematic and computationally convenient way to overcome this issue is to employ the spectator-qubit method: by coupling an auxiliary qubit to the two-level fluctuator ensemble, an analytical approximation for S(ω) fully consistent with the fluctuation-dissipation theorem can be obtained. We discuss the resulting characteristics of the noise which exhibits distinct behavior over several frequency ranges, including a 1/f to 1/f2 crossover with a T3 temperature dependence of the crossover frequency.

2-dimensional systems↗
DOE OSTI2022

Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe

Defects in wide-band-gap semiconductors are promising qubit candidates for quantum communication and computation. Epitaxially grown II-VI semiconductors are particularly promising host materials due to their direct band gap and potential for isotopic purification to a spin-zero nuclear background. Here, we show an alternative type of single photon emitter with potential electron spin qubits based on Cl impurities in ZnSe. We utilize a quantum well to increase the binding energies of donor emission and confirm single photon emission with short radiative lifetimes of 192 ps. Furthermore, we verify that the ground state of the Cl donor complex contains a single electron by observing two-electron-satellite emission, leaving the electron in higher orbital states. We also characterize the Zeeman splitting of the exciton transition by performing polarization-resolved magnetic spectroscopy on single emitters. Our results suggest single Cl impurities are suitable as a single photon source with a potential photonic interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Growth and characterization of high-quality Zr doped AlN epilayers

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) has also been identified as a promising material platform for the exploration of solid-state qubits for quantum information and technology, high performance piezoelectric acoustic wave resonators, and optically triggered ultrafast power switching devices facilitated by optically activating Zr related impurities. Despite the significant potential, the ability for producing AlN:Zr epitaxial structures has yet to be established. In this study, we have achieved AlN:Zr epilayers with a high Zr doping level [NZr] of up to 1020 cm−3 using industrial standard metal-organic chemical vapor deposition growth technique. High crystalline quality of AlN:Zr was confirmed by x-ray diffraction, revealing a narrow full width at half maximum of the (002) rocking curve at 216 arcsec for 1.8 μm thick epilayers deposited on sapphire at [NZr]=1020 cm−3. Zr doping was observed to slightly increase the c-lattice constant to 4.992 Å for AlN:Zr (at [NZr]=1020 cm−3) compared to 4.980 Å for undoped AlN. X-ray photoelectron spectroscopy measurement results verified the substitution of Zr at the Al site (ZrAl). The formation of (ZrAl–VN) complexes, which are predicted to possess all the desired properties required by quantum qubits, was confirmed through optical absorption studies. The realization of high-quality AlN:Zr epilayers significantly broadens the scope of technologically significant device applications for AlN.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Analog Quantum Simulation of the Dynamics of Open Quantum Systems with Quantum Dots and Microelectronic Circuits

We introduce a general setup for the analog quantum simulation of the dynamics of open quantum systems based on semiconductor quantum dots electrically connected to a chain of quantum RLC electronic circuits. The dots are chosen to be in the regime of spin-charge hybridization to enhance their sensitivity to the RLC circuits while mitigating the detrimental effects of unwanted noise. In this context, we establish an experimentally realizable map between the hybrid system and a qubit coupled to thermal harmonic environments of arbitrary complexity that enables the analog quantum simulation of open quantum systems. We assess the utility of the simulator by numerically exact emulations that indicate that the experimental setup can faithfully mimic the intended target even in the presence of its natural inherent noise. We further provide a detailed analysis of the physical requirements on the quantum dots and the RLC circuits needed to experimentally realize this proposal that indicates that the simulator can be created with existing technology. The approach can exactly capture the effects of highly structured non-Markovian quantum environments typical of photosynthesis and chemical dynamics, and offer clear potential advantages over conventional and even quantum computation. The proposal opens a general path for effective quantum dynamics simulations based on semiconductor quantum dots.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Spin-Photon Entanglement of a Single Er 3 + Ion in the Telecom Band

Entanglement between photons and a quantum memory is a key component of quantum repeaters, which allow long-distance quantum entanglement distribution in the presence of fiber losses. Spin-photon entanglement has been implemented with a number of different atomic and solid-state qubits with long spin coherence times, but none directly emit photons into the 1.5 − μ m telecom band where losses in optical fibers are minimized. Here, we demonstrate spin-photon entanglement using a single rare earth ion in the solid-state Er 3 + coupled to a silicon nanophotonic cavity, which directly emits photons at 1532.6 nm. We infer an entanglement fidelity of 73(3)% after propagating through 15.6 km of optical fiber. This work opens the door to large-scale quantum networks based Er 3 + ions, leveraging scalable silicon device fabrication and spectral multiplexing. Published by the American Physical Society 2025

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high-fidelity quantum computing. Here we present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Model validation and error attribution for a drifting qubit

Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long timescales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. Here, in this work, we demonstrate how we can use the distribution of these values to validate or invalidate candidate noise models. We focus on the case of randomized benchmarking (RB), where typically a single error rate is reported but this error rate can drift over time when multiple passes of RB are performed. We show that using a statistical test as simple as the Kolmogorov-Smirnov statistic on the distribution of RB error rates can be used to rule out noise models, assuming the experiment is performed over a long enough time interval to capture relevant low frequency noise. With confidence in a noise model, we show how care must be exercised when performing error attribution using the distribution of drifting RB error rate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Computationally guided experimental validation of divacancy defect formation in 4H-SiC

Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the V Si migration temperature and below the VV migration threshold.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2026

Simulating plasma wave propagation on a superconducting quantum chip

Quantum computers may one day enable the efficient simulation of strongly coupled plasmas that lie beyond the reach of classical computation in regimes where quantum effects are important and the scale separation is large. Here, in this article, we take a first step toward efficient simulation of quantum plasmas by demonstrating linear plasma wave propagation on a superconducting quantum chip. Using high-fidelity and highly expressive device-native gates, combined with an error-mitigation technique, we simulate the scattering of laser pulses from inhomogeneous plasmas. Our approach is made feasible by the identification of a suitable local spin model whose excitations mimic plasma waves, and whose circuit implementation requires a lower gate count than other proposed approaches that would require a future fault-tolerant quantum computer. This work opens avenues to study more complicated phenomena that cannot be simulated efficiently on classical computers, such as nonlinear quantum dynamics when strongly coupled plasmas are driven out of equilibrium.

general physics↗
DOE OSTI2024

Rephasing spectral diffusion in time-bin spin-spin entanglement protocols

Generating high-fidelity spin-spin entanglement is an essential task of quantum repeater networks for the distribution of quantum information across long distances. Solid-state-based spin-photon interfaces are promising candidates to realize nodes of a quantum network, but are often limited by spectral diffusion of the optical transition, which results in phase errors on the entangled states. Here, we introduce a method to correct phase errors from quasi-static frequency fluctuations after the entangled state is generated, by shelving the emitters in the excited state to refocus the unknown phase. For quasi-static frequency fluctuations, the fidelity is determined only by the lifetime of the excited state used for shelving, making it particularly suitable for systems with a long-lived shelving state with correlated spectral diffusion. Such a shelving state may be found in Kramers doublet systems such as rare-earth emitters and color centers in Si or SiC interfaced with nanophotonic cavities with a strongly frequency-dependent Purcell enhancement. Furthermore, the protocol can be used to generate high-fidelity entangled spin pairs without reducing the rate of entanglement generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗