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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Synchronized flash photolysis and pulse deposition in matrix isolation experiments

An apparatus is described which permits flash photolysis of a pulse-deposited gas mixture in a matrix isolation experiment. This technique obviates the limitations of in situ photolysis imposed by the cage effect and by secondary photolysis. The matrix is deposited in pulses at 30-s intervals and photolyzed sequentially by four synchronized flashlamps approximately 1 ms before the pulse strikes the cold surface. Pulsed deposition maintains adequate isolation and causes line narrowing, which enhances spectral sensitivity. The efficacy of flash photolysis combined with pulsed deposition for producing and trapping transient species was demonstrated by infrated detection of CF3 (from photolysis of CF3I/Ar mixtures) and of ClCO (from photolysis of Cl2/CO/Ar mixtures). The apparatus was used to study the photolytic decomposition of gaseous tricarbonylironcyclobutadiene, C4H4Fe(CO)3. The results indicate that the primary photolytic step is not elimination of C4H4, as suggested earlier, but rather of CO.

Allamandola, Louis J.↗
DOE OSTI2026

Activity Convergence between Continuous- and Pulsed-Deposition NiFe Hydroxide Anodes in Liquid Alkaline Electrolyzers

Improving the activity of anodes for the alkaline oxygen evolution reaction (OER) is of interest because of the importance of the reaction in electrochemical technology. There is an abundance of studies which confirm that NiFe hydroxide, often prepared by electrodeposition, is the most active catalyst for the alkaline OER. This relatively high level of confidence in the optimal OER catalyst chemistry suggests that exploration of methods which improve on features besides the chemistry of the films, such as their microstructure, could access new heights of activity. In this study, the possible benefits of pulsed current deposition relative to the conventional continuous current approach to the deposition of NiFe hydroxides were investigated. Pulsed deposition densified the film surfaces by preventing metal ion depletion at the electrode surface during film formation. The Fe content, redox reversibility, and OER activity were higher for the pulsed deposition films relative to their continuous deposition counterparts. Though pulsed deposition imparted a higher OER performance of the films compared to continuous deposition at the three-electrode level, this improved performance was not retained during electrolyzer operation. Rather, a convergence of the cell performance is seen irrespective of the deposition approach. This phenomenon was attributed to the way electrolyzer conditionsrelatively high temperature, base concentration, and current densitycan drive alternate mechanisms for observed performance.

08 HYDROGEN↗
NASA NTRS1994

Soft x ray optics by pulsed laser deposition

A series of molybdenum thin film depositions by PLD (Pulsed Laser Deposition) have been carried out, seeking appropriate conditions for multilayer fabrication. Green (532 nm) and UV (355 nm) light pulses, in a wide range of fluences, were used. Relatively large fluences (in comparison with Si) are required to cause evaporation of molybdenum. The optical penetration depths and reflectivities for Mo at these two wavelengths are comparable, which means that results should be, and do appear to be similar for equal fluences. For all fluences above threshold used, a large number of incandescent particles is ejected by the target (either a standard Mo sputtering target or a Mo sheet were tried), together with the plasma plume. Most of these particles are clearly seen to bounce off the substrate. The films were observed with light microscopy using Nomarski and darkfield techniques. There is no evidence of large debris. Smooth films plus micron-sized droplets are usually seen. The concentration of these droplets embedded in the film appears not to vary strongly with the laser fluence employed. Additional characterization with SEM and XRD is under way.

Fernandez, Felix E.↗
NASA NTRS1995

Enhancement of thickness uniformity of thin films grown by pulsed laser deposition

A peculiarity of the pulsed laser deposition technique of thin-film growth which limits its applicability is the very rapid drop of resulting film thickness as a function of distance from the deposition axis. This is due to the narrow forward peaking of the emission plume characteristic of the laser ablation process. The plume is usually modeled by a cos(sup n) theta function with n greater, and in some cases, much higher, than 1. Based on this behavior, a method is presented to substantially enhance coverage uniformity in substrate zones of the order of the target-substrate distance h, and to within a specified thickness tolerance. Essentially, target irradiation is caused to form an annular emission source instead of the usual spot. By calculating the resulting thickness profiles, an optimum radius s is found for the annular source, corresponding to a given power in the emission characteristic and a given value of h. The radius of this annulus scales with h. Calculated numerical results for optimal s/h ratios corresponding to a wide range of values for n are provided for the case of +/- 1% tolerance in deviation from the thickness at deposition axis. Manners of producing annular illumination of the target by means of conic optics are presented for the case of a laser beam with radially symmetric profile. The region of uniform coverage at the substrate can be further augmented by extension of the method to multiple concentric annular sources. By using a conic optic of novel design, it is shown also how a single-laser beam can be focused onto a target in the required manner. Applicability of the method would be limited in practice by the available laser power. On the other hand, the effective emitting area can be large, which favors extremely high growth rates, and since growth can occur uniformly over the whole substrate for each laser pulse, single-shot depositions with substantial thicknesses are possible. In addition, the simultaneity of growth over the complete substrate is desirable when monitoring the growth in situ.

Fernandez, Felix E.↗
NASA NTRS2006

Pulsed Laser Deposition of High Temperature Protonic Films

Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

Dynys, Fred W.↗
NASA NTRS1992

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Foote, M. C.↗
NASA NTRS1990

Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox.

Ianno, N. J.↗
DOE OSTI2025

Encapsulation of Monolayer 2D Materials Using Kinetic Energy-Controlled Pulsed Laser Deposition

The integration of monolayer (ML) two-dimensional (2D) materials into next-generation microelectronics, optoelectronics, and sensors is hindered by their sensitivity to environmental exposure. Deposition of additional layers for encapsulation or growth on ML 2D materials by versatile but energetic plasma techniques such as pulsed laser deposition (PLD) has not been considered at the monolayer level because of potential damage caused by hyperthermal species with kinetic energies (KEs) exceeding the threshold displacement energy (TDE) of the ML. Here, we describe a general strategy to understand and mitigate damage during PLD by reducing the incident KE of ablated species below the TDE of the 2D monolayer using background gas collisions. Ion flux diagnostics, combined with in situ Raman spectroscopy of monolayer graphene during PLD of amorphous boron nitride (a-BN) as a dielectric encapsulation layer, show that damage is primarily correlated with fast ions that penetrate the background gas in accordance with Beer’s Law and are often overlooked in ICCD imaging due to the dominance of the bright, delayed plasma luminescence. Significantly, if fast ions are eliminated and a ∼2 nm-thick a-BN layer is “soft landed”, the monolayer graphene is effectively protected from damage by high KE species in the boron nitride plasma plume. Deposited a-BN films display a characteristic dielectric constant of 3.6 at 100 kHz and tunable charge injection properties. Our results enable PLD as a viable option for encapsulation and thin film growth onto ML 2D materials, with implications for both fundamental research and device integration.

2D materials↗
DOE OSTI2025

Predicting Pulsed-Laser Deposition SrTiO 3 Homoepitaxy Growth Dynamics Using High-Speed Reflection High-Energy Electron Diffraction

Pulsed-laser deposition (PLD) is a powerful technique for growing complex oxides with controlled stoichiometry. To understand growth dynamics therein, it is common to leverage in situ spectroscopies, such as reflection high-energy electron diffraction (RHEED), to monitor surface crystallinity. Most commercial systems rely on video-rate cameras operating at 60-120 Hz that lack sufficient temporal resolution to capture growth dynamics at practical deposition frequencies. Here, a high-speed platform to record in situ dynamics via RHEED at >500 Hz is implemented. An open-source analysis package is designed to fit diffraction spots to 2D Gaussians, allowing single-pulse surface reconstruction kinetics extraction. Using homoepitaxially deposited (001)-oriented SrTiO 3 as a model system, we demonstrate how high-speed RHEED can provide real-time insight into growth processes obscured by slower acquisition systems. By fitting the single-pulse intensity to a set of exponential functions, we observe changes in the characteristic decay time and mechanism correlated to the substrate step width and surface termination. We observe distinct surface effects, with diffraction intensity decaying on lower-energy TiO 2 -terminated surfaces and stabilizing on SrO- or mixed-terminated surfaces. Similarly, using an exponential model, the extracted characteristic time of adatom deposition decreases with increased density of bonding sites associated with mixed termination and narrower step widths. Ultimately, this work shows how increasing RHEED temporal resolution can uncover new insights into growth processes, with practical implications for the design and control of PLD processes. This experimental platform provides new capabilities to enable data-driven machine learning analysis and autonomous control systems to enhance the complexity and fecundity of PLD.

(SrO)↗
NASA NTRS2006

Pulsed Laser Deposition of BaCe(sub 0.85)Y(sub 0.15)0(sub 3) FILMS

Pulsed laser deposition has been used to grow nanostructured BaCe(sub 0.85)Y(sub 0.15)0(sub 3) films. The objective is to enhance protonic conduction by reduction of membrane thickness. Sintered samples and laser targets were prepared by sintering BaCe(sub 0.85)Y(sub 0.15)O(sub 3) powders derived by solid state synthesis. Films 2 to 6 m thick were deposited by KrF excimer laser on Si and porous Al2O3 substrates. Nanocrystalline films were fabricated at deposition temperatures of 600-800 C deg at O2 pressure of 30 mTorr and laser fluence of 1.2 J/cm square. Films were characterized by x-ray diffraction, scanning electron microscopy and electrical impedance spectroscopy. Dense single phase BaCe(sub 0.85)Y((sub 0.15) 0(sub 3) films with a columnar growth morphology is observed, preferred crystal growth was found to be dependent upon deposition temperature and substrate type. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C deg to 900 C deg in moist argon. Electrical conduction of the fabricated films was 1 to 4 orders of magnitude lower than the sintered bulk samples. With respect to the film growth direction, activation energy for electrical conduction is 3 times higher in the perpendicular direction than the parallel direction.

Dynys, F. W.↗
NASA NTRS2017

Dynamic Control of Refractive Index During Pulsed-Laser-Deposited Waveguide Growth

Engineering the optical properties of waveguides is important for the optimization of their guided optical mode characteristics. Here, we document the dynamic control of the refractive index and composition of crystalline films, via the substrate temperature, during pulsed-laser-deposition growth of Er(1%)-doped yttrium gallium garnet on <100>-orientated single-crystal yttrium aluminium garnet. An increasing substrate temperature is observed to reduce the gallium content in the grown film, with a corresponding reduction of refractive index. We demonstrate the ability to accurately control the refractive index via this technique and use it to grow a complex multi-core crystal waveguide. Our results highlight the potential of using pulsed laser deposition to fabricate crystal films with bespoke optical properties and thus engineer passive and active waveguide devices in situ.

Temperature↗
DOE OSTI2026

Structural and Electrocatalytic Studies of Pulsed Laser Deposited Epitaxial RuO 2 Thin Films

Two sets of high-quality epitaxial ruthenium oxide (RuO 2 ) thin films with different thicknesses were synthesized in situ on cost-competitive sapphire substrates by using a pulsed laser deposition technique. The first set of films, with a thickness of 40 nm and a sheet resistance of 15.7 Ω/□, was prepared using 2100 laser pulses, while the second set of films, with a thickness of 87 nm and a sheet resistance of 6.7 Ω/□, was prepared using 4800 laser pulses. All other deposition parameters were kept the same. The post-deposition structural and morphological measurements showed that both sets of films grew at the same growth rate, had the same crystallinity, similar grain boundary density, and slightly different surface roughness. The thicker RuO 2 films achieved an overpotential of 280 mV for the oxygen evolution reaction at a current density of 100 μA/cm 2 , comparable to or exceeding the performance of films grown on more expensive substrates. Comparatively, the thinner RuO 2 films, which have a significantly higher charge transfer resistance (250 Ω versus 100 Ω for thick films), display a higher overpotential of 320 mV. These results indicate that the lower electrical resistance of thicker films promotes charge transfer through the film body, leading to superior electrocatalytic properties.

charge-transfer↗
DOE OSTI2026

Synthesis and composition control of epitaxial FeWO4 thin films using pulsed laser deposition

We report the growth of epitaxial FeWO4 thin films on c-plane sapphire via pulsed laser deposition using a Fe 2 O 3 /WO 3 target ablated in an O 2 atmosphere. At a constant O 2 pressure of 1 mTorr, x-ray diffraction (XRD) confirms FeWO 4 as the major crystalline phase for substrate temperatures from 500 to 800 °C. As temperature increases, x-ray fluorescence (XRF) shows the Fe/W ratio remains nearly constant at 0.90 ± 0.02, while x-ray photoelectron spectroscopy (XPS) shows Fe 3+ to Fe 2+ conversion increases from 20% to 35%. Morphological analysis reveals phase separation, likely of amorphous Fe 3+ oxide from crystalline FeWO 4 , increasing with Fe 3+ conversion. This is attributed to an O-rich laser ablated flux, where conversion is driven by the Arrhenius temperature dependence of Fe 3+ → Fe 2+ reduction on the film surface. At a constant substrate temperature of 750 °C, XRD confirms FeWO 4 formation for O 2 pressures from 0.5 to 10 mTorr. As pressure increases, XRF shows the Fe/W ratio decreases from 0.98 to 0.70, while XPS shows Fe 3+ conversion rises from 15% to 70%. Morphology shows phase separation decreasing with increasing Fe 3+ conversion. This is attributed to scattering, where higher O 2 pressure makes the laser ablated flux O-deficient relative to Fe and W, facilitating Fe 2+ formation. Films with Fe 3+ conversion above ∼30% and Fe/W ratios from 0.86 to 0.96 exhibit FeWO 4 optical and electronic properties suitable for photoanode applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Au assisted smooth ultrathin epitaxial ZnO film grown by pulsed laser deposition on sapphire(0001)

High quality ZnO has applications in photonics and electronics. Literature has shown that continuous, but rough ZnO film can be grown on sapphire substrate by pulsed laser deposition (PLD). In this work, ZnO and Au were co-deposited by PLD on sapphire(0001) substrates from a single ZnO target overlaid with an Au strip that serves as a catalyst. The reflection high-energy electron diffraction (RHEED) patterns show paired double stripes from sample of ZnO-Au where the difference of in-plane lattice parameters between ZnO and Au is 11.4 %. The two-dimensional (2D) reciprocal space maps constructed from azimuthal RHEED (ARHEED) patterns reveal parallel epitaxial relationship between ZnO and Au in the continuous ZnO-Au film on sapphire substrate. Transmission electron microscopy (TEM) cross section images and energy dispersive spectroscopy maps show a minute amount of Au nanocrystals distributed in the entire ultrathin ZnO film. Atomic force microscopy shows the root-mean-square roughness of the surface of ultrathin ZnO film with Au is in the sub-nm range. The ARHEED and TEM results show that a couple of atomic percentages of Au co-deposited with ZnO catalyzes the growth of smooth ultrathin epitaxial ZnO film.

36 MATERIALS SCIENCE↗
NASA NTRS2003

Apparatus and method for pulsed laser deposition of materials on wires and pipes

Methods and apparatuses are disclosed which allow uniform coatings to be applied by pulsed laser deposition (PLD) on inner and outer surfaces of cylindrical objects, such as rods, pipes, tubes, and wires. The use of PLD makes this technique particularly suitable for complex multicomponent materials, such as superconducting ceramics. Rigid objects of any length, i.e., pipes up to a few meters, and with diameters from less than 1 centimeter to over 10 centimeters can be coated using this technique. Further, deposition is effected simultaneously onto an annular region of the pipe wall. This particular arrangement simplifies the apparatus, reduces film uniformity control difficulties, and can result in faster operation cycles. In addition, flexible wires of any length can be continuously coated using the disclosed invention.

Fernandez, Felix E.↗
DOE OSTI2024

Optimizing pulsed laser deposition of crystalline BiVO 4 thin films on yttrium-stabilized zirconia (110) substrates

Here, different conditions are explored to understand their effects on the pulsed laser deposition of BiVO 4 water splitting photoanodes, over YSZ (110) substrates. A two-step deposition (TSD) method can independently tune nucleation and bulk film growth, leading to the formation of a phase pure, crystalline BiVO 4 film with optimized water splitting activities.

36 MATERIALS SCIENCE↗