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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Benchmarking Real-Time Control Platforms Using a Matlab/Simulink Coder with Applications in the Control of DC/AC Switched Power Converters

In the control of DC/AC switched power converters (SPC), one of the most important aspects to be considered is the selection of the real-time control platform. The real-time control platform must be able to meet the high performance efficiency and regulation requirements of the DC/AC SPC, as these typically operate at switching frequencies in the order of kHz to MHz. For this reason, the hardware characteristics of the ADC and PWM, and the processing capacity of the real-time control platform are of vital importance when implementing advanced digital controllers that maintain voltage and current levels within regulatory standards. In this context, we aimed to perform a comparative study of the computation times of different real-time control platforms when implementing different control strategies for DC/AC switched power converters. We also analyzed the impact of the real-time control platforms on the THD of the voltages generated by the DC/AC switched power converters. With the help of this paper, researchers and developers will have criteria to select which real-time control platform to use in real-time control for DC/AC SPC applications.

42 ENGINEERING↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Thermal Stress Reduction in Power Switching Devices Using Distributed Loss PWM Concept for Current Source Inverters

A new modulation scheme is proposed for current source inverters (CSIs) that reduces the variation and peak junction temperature in the CSIs' power devices. The distributed loss pulse-width modulation (DLM) concept is introduced and applied to traditional space vector modulation methods to develop modified modulation schemes that reduce the thermal stress on power devices. The device junction temperatures resulting from conventional and DLM schemes are compared. Simulation and experimental results confirm that the proposed DLM concept reduces thermal stress on the devices while maintaining the same high output current waveform quality compared to traditional CSI modulation schemes. The CSI power device lifetime (i.e., the number of cycles to failure) are estimated using the simulation and experimental results. The proposed DLM significantly increases the device lifetime (by 5 to 6 times) by reducing the junction temperature variation compared to the conventional modulations.

42 ENGINEERING↗
DOE OSTI2021

Smart controller with phantom inductor current sensing for switched mode power supplies

Voltage on the output terminal of an inductor is obtained as a first input signal to a control block (CB); the inductor has an input terminal connected to a power switch and driver block at a switching node. A sense input voltage is obtained on an output terminal of a sensing circuit that is not directly connected to the switching node, as a second input signal to the CB. A voltage is generated on a first output terminal of the CB and is selected such that the CB can use its first and second input signals to infer the current through the inductor. A pulse width modulation (PWM) signal is generated on a second output terminal of the CB, based on the inferred current through the inductor; the second output signal from the CB is provided to a PWM input terminal of the power switch and driver block.

Zhang, Xin↗
DOE OSTI2023

Fluid power circuit having switch-mode power transformer and methods

A fluid power circuit with a switch-mode power transformer used to transfer power while keeping the pressure of power source and reverse osmosis processes relatively decoupled. The switch-mode power transformer uses the inertia of a hydraulic motor driven electric generator and switching of a hydraulic motor inlet between high and low-pressure ends to decrease the pressure at which power is being transmitted to a reverse osmosis process.

Simmons, II, Jeremy W.↗
DOE OSTI2023

The BiDFET Device and Its Impact on Converters

The matrix converter topology for direct ac-to-ac conversion offers elimination of the bulky and unreliable D.C. link capacitors used in the popular Voltage-Source Inverter (VSI) with a front-end rectifier. The resulting more compact and higher efficiency implementation is a desirable solution for a wide variety of applications, such as photovoltaic energy generation, motor drives, and energy storage systems. The development of matrix converters has been hampered by the lack of availability of commercial bidirectional power switches with the ability to block high voltages in the first and third quadrants, carry on state current in both quadrants with low voltage drop, exhibit large forward-biased safe-operating-area (FBSOA), and low switching power losses. Consequently, many implementations have been tried in the past using discrete devices, as listed in Table I. Two implementations utilize commonly available asymmetric blocking IGBTs, while two cases make use of SiC power MOSFETs. They generally have a large parts count (4-6 individual switches) that occupies significant space in the converter where multiple bi-directional switches are required. They also have a high on-state voltage drop that degrades efficiency. As a result, one implementation utilizes symmetric blocking IGBT to achieve a low parts count (2), but its switching losses are unacceptably high.

42 ENGINEERING↗
DOE OSTI2021

Soft-switching voltage-edge-rate-limiting power inverter

An auxiliary resonant soft-edge pole inverter circuit is provided. The power inverter circuitry may include a first pair of capacitors in parallel with a corresponding pair of main power switching modules, each power switching module comprising a switch and a diode in parallel and sharing a common central node with the first pair of capacitors. The power inverter circuit may further include a first pair of auxiliary switches connected in series with a first pair of inductors, respectively, to generate resonant current from a DC power source, the first pair of inductors also sharing the common central node. The power inverter circuitry may further include a second pair of auxiliary switches connected in series with a second pair of capacitors, respectively, the second pair of auxiliary switches also sharing the common central node, the circuit producing an alternating current output at the common central node.

Wasynczuk, Oleg↗
DOE OSTI2024

Multi-resonant switched capacitor power converter architecture

A switched-capacitor (SC) network in an SC converter is controlled to operate at varying resonant modes to achieve high conversion ratio efficiency, at a low circuit component count. These power converters are suited to numerous application areas including improving energy efficiency of data centers. A family of resonant switched capacitor (SC) converters with multiple operating phases are presented “Multi-Resonant SC Converters”. Described in detail are an 8-to-1 Multi-Resonant-Doubler (MRD) converter and a 6-to-1 Cascaded Series-Parallel (CaSP). The topology of these converters make them amenable to combining like units in parallel toward reaching higher power levels.

Ye, Zichao↗
DOE OSTI2022

Advanced Solar and Load Forecasting Incorporating HD Sky Imaging (Phase III)

Due to rapidly changing sky conditions, the available solar irradiance for energy generation is subject to wide swings in amplitude. As the market penetration of solar energy continues to increase rapidly, these variations in solar power generation are beginning to have an impact on grid stability and increased wear on power switches. Solar power forecasting plays a critical role in operations for Independent System Operators (ISOs) and utilities. Accurate forecasts help maintain grid reliability, optimize generation from renewables, and reduce operating costs. Of particular interest to the ISOs and utilities are sudden changes in solar irradiance, termed “ramp events,” due to the movement of clouds. One significant impact of ramp events on the grid is additional ancillary service requirements necessary to manage such variability. Ramp events can also cause voltage fluctuations in the distribution grids and trigger actions of automated line equipment (e.g., tap changers), leading to additional maintenance costs. In high penetration solar regions, forecasts must be made for both transmission-connected and distribution-connected resources – either behind the meter or in front of it. Particularly for distributed solar energy resources, forecasting can be a challenge due to the lack of visibility of the energy resource. Brookhaven National Laboratory (BNL) has been working towards nowcasting Global Horizontal Irradiance (GHI) using low-cost technologies for several years now. The Solar NowCasting technology being developed by BNL is a 0 – 30 min solar “nowcasting” technology applicable to a scale covering both large generating facilities and residential, distributed solar installations that relies on a network of ground-based high-definition (HD) cameras and surface pyranometers. GHI forecasts are being produced for both regions using 8 ground-based HD cameras and at least 2 surface pyranometers. When stitched together, the camera images can be used to forecast the impact of clouds on available solar irradiance over a domain of ~50 km 2 . Phase I of the project was the engineering scale up conceptual design stage. Phase II was the initial field test and demonstration, in which the technology was scaled up by a factor of 20 times and successfully demonstrated in eastern Long Island. In Phase III, an additional forecasting network was added in upstate NY and both networks are currently being operated until at least a full year of data is gathered by the Albany network to allow for the collection of sufficient data to evaluate performance against the persistence and smart persistence models using the Solar Arbiter.

14 SOLAR ENERGY↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
DOE OSTI2022

High-Speed and High-Power Ferroelectric Switching Current Measurement Instrument for Materials with Large Coercive Voltage and Remanent Polarization

A high-speed and high-power current measurement instrument is described for measuring rapid switching of ferroelectric samples with large spontaneous polarization and coercive field. Instrument capabilities (±200 V, 200 mA, and 200 ns order response) are validated with a LiTaO 3 single crystal whose switching kinetics are well known. The new instrument described here enables measurements that are not possible using existing commercial measurement systems, including the observation of ferroelectric switching in large coercive field and large spontaneous polarization Al 0.7 Sc 0.3 N thin films.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2021

Ultrafast optical switching and power limiting in intersubband polaritonic metasurfaces

Highly nonlinear optical materials with fast third-order nonlinear optical response are crucial for the operation of all-optical photonic devices, such as switches for signal processing and computation, power limiters, and saturable absorbers. The nonlinear response of traditional optical materials is weak, thus requiring large light intensities to induce significant changes in their properties. Here we show that optical control of the coupling rate in subwavelength patch antennas coupled to intersubband transitions in multi-quantum-well semiconductor heterostructures can provide a giant third-order nonlinear response, on the order of 3.4 × <#comment/> 10 − <#comment/> 13 m 2 / V 2 , with a response time < <#comment/> 2 p s . We utilize this effect to realize intersubband polaritonic metasurfaces and demonstrate their operation as highly nonlinear saturable and reverse saturable absorbers, enabling optical power limiters and other elements for all-optical modulation and control. Our approach enables a plethora of compact, low-power, highly nonlinear devices with spectral, temporal, and structured wavefront responses tailored by design.

Mann, Sander A. (ORCID:0000000277420615)↗
DOE OSTI2023

Decoding the Atomic Structure of Ga 2 Te 5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

Neuromorphic computing, reconfigurable optical metamaterials that are operational over a wide spectral range, holographic and nonvolatile displays of extremely high resolution, integrated smart photonics, and many other applications need next-generation phase-change materials (PCMs) with better energy efficiency and wider temperature and spectral ranges to increase reliability compared to current flagship PCMs, such as Ge 2 Sb 2 Te 5 or doped Sb 2 Te. Gallium tellurides are favorable compounds to achieve the necessary requirements because of their higher melting and crystallization temperatures, combined with low switching power and fast switching rate. Ga 2 Te 3 and non-stoichiometric alloys appear to be atypical PCMs; they are characterized by regular tetrahedral structures and the absence of metavalent bonding. The sp 3 gallium hybridization in cubic and amorphous Ga 2 Te 3 is also different from conventional p-bonding in flagship PCMs, raising questions about its phase-change mechanism. Furthermore, gallium tellurides exhibit a number of unexpected and highly unusual phenomena, such as nanotectonic compression and viscosity anomalies just above their melting points. Using high-energy X-ray diffraction, supported by first-principles simulations, we will elucidate the atomic structure of amorphous Ga 2 Te 5 PLD films, compare it with the crystal structure of tetragonal gallium pentatelluride, and investigate the electrical, optical, and thermal properties of these two materials to assess their potential for memory applications, among others.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.

47 OTHER INSTRUMENTATION↗