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At least 19 records

Multi-chip photonics transceiver

A photonics transceiver is described herein, wherein the photonics transceiver exhibits improved areal bandwidth density and improved energy per bit consumption relative to conventional photonics transceivers. The photonics transceiver achieves an areal bandwidth density of at least 5 Tbps/mm2 with an energy consumption of less than 500 fJ/bit (sum of energy consumed for both a transmitted bit and a received bit). The photonics transceiver is a multi-chip module, where chips in the multi-chip module are tightly integrated with one another. The multi-chip module includes light source, photodetector, photonics, and control/logic chips. The photonics chip includes transparent conducting oxide integrated optical modulators and multiplexers and demultiplexers based on MEMS-tunable optical ring resonators.

Wood, Michael↗

Silicon photonic chip for 16-channel wavelength division (de-)multiplexing in the O-band

We experimentally demonstrate a silicon photonic chip-scale 16-channel wavelength division multiplexer (WDM) operating in the O-band. The silicon photonic chip consists of a common-input bus waveguide integrated with a sequence of 16 spectral add-drop filters implemented by 4-port contra-directional Bragg couplers and resonant cladding modulated perturbations. The combination of these features reduces the spectral bandwidth of the filters and improves the crosstalk. An apodization of the cladding modulated perturbations between the bus and the add/drop waveguides is used to optimize the strength of the coupling coefficient in the propagation direction to reduce the intra-channel crosstalk on adjacent channels. The fabricated chip was validated experimentally with a measured intra-channel crosstalk of ∼−18.9 dB for a channel spacing of 2.6 nm. The multiplexer/demultiplexer chip was also experimentally tested with a 10 Gbps data waveform. The resulting eye-pattern indicates that this approach is suitable for datacenter WDM-based interconnects in the O-band with large aggregate bandwidths.

Davis, Jordan A. (ORCID:0000000343483295)↗

Trace-gas Spectroscopy of Methane on a Silicon Photonic Chip

Recent advances in hybrid integrated silicon photonic (SiPh) technologies are enabling the migration of conventional free-space optical spectroscopic sensors onto a compact on-chip platform [1-3]. In addition to the small spatial footprint and power efficiency, we envision such sensors to be scalably manufactured using existing CMOS-compatible foundry processes, thus providing disruptive SWaP-C (size, weight, power, and cost) benefits in contrast to commercially available optical sensors. Initial demonstration of evanescent TDLAS (tunable diode laser absorption spectroscopy) of methane (CH4) on a passive SiPh waveguide has indicated minimum fractional absorption of (αL)min = 3.3×10-5 Hz-1/2, which is on-par with state-of-art open-path TDLAS sensor systems [4]. Given the general recent movement toward cleaner fuels, CH4 fugitive emissions monitoring is of significant interest given the extremely high radiative forcing potential [5]. For a nominal waveguide length of 30 cm with Γ = 25 % evanescent exposure, this corresponds to ~ 10 ppmv detection sensitivity at 1 s integration time, and further sensitivity enhancement is expected with even longer waveguides, as the laser RIN typically dominates our measurements at nominal waveguide lengths. Despite the excellent sensitivities for short-term integration periods, long-term measurements (> 10 s) are potentially limited on a silicon platform due to the high material thermo-optic coefficient, resulting in significant susceptibility of Fabry-Perot etalons to drift in the presence of even small (~ 1 mK) thermal fluctuations. To this end, customized spectral fitting algorithms have played a significant role in both fringe drift mitigation and peak detection fidelity (e.g. in the presence of a passing CH4 plume), which are crucial for enhancing long-term stability without the need for frequent sensor recalibration. A variety of spectral algorithms have been designed for this purpose, and details will be presented at the meeting.

03 NATURAL GAS↗

Control of coherent information via on-chip photonic–phononic emitter–receivers

We report that rapid progress in integrated photonics has fostered numerous chip-scale sensing, computing and signal processing technologies. However, many crucial filtering and signal delay operations are difficult to perform with all-optical devices. Unlike photons propagating at luminal speeds, GHz-acoustic phonons moving at slower velocities allow information to be stored, filtered and delayed over comparatively smaller length-scales with remarkable fidelity. Hence, controllable and efficient coupling between coherent photons and phonons enables new signal processing technologies that greatly enhance the performance and potential impact of integrated photonics. Here we demonstrate a mechanism for coherent information processing based on travelling-wave photon–phonon transduction, which achieves a phonon emit-and-receive process between distinct nanophotonic waveguides. Using this device, physics—which supports GHz frequencies—we create wavelength-insensitive radiofrequency photonic filters with frequency selectivity, narrow-linewidth and high power-handling in silicon. More generally, this emit-receive concept is the impetus for enabling new signal processing schemes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Side-lobe reduction by cascading Bragg grating filters on a Si-photonic chip

Bragg-grating based cavities and coupler designs present opportunities for flexible allocation of bandwidth and spectrum in silicon photonic devices. Integrated silicon photonic devices are moving toward mainstream, mass adoption, leading to the need for compact Bragg grating based designs. In this work we present a design and experimental validation of a cascaded contra-directional Bragg-grating coupler with a measured main lobe to side-lobe contrast of 12.93 dB. This level of performance is achieved in a more compact size as compared to conventional apodized gratings, and a similar design philosophy can be used to improve side-lobe reduction in grating-based mirror design for on-chip lasers and other cavity-based designs as well.

42 ENGINEERING↗

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗

Scalable low-loss cryogenic packaging of quantum memories in CMOS-foundry processed photonic chips

Optically linked solid-state quantum memories such as color centers in diamond are a promising platform for distributed quantum information processing and networking. Photonic integrated circuits (PICs) have emerged as a crucial enabling technology for these systems, integrating quantum memories with efficient electrical and optical interfaces in a compact and scalable platform. Packaging these hybrid chips into deployable modules while maintaining low optical loss and resiliency to temperature cycling is a central challenge to their practical use. We demonstrate a packaging method for PICs using surface grating couplers and angle-polished fiber arrays that is robust to temperature cycling, offers scalable channel count, applies to a wide variety of PIC platforms and wavelengths, and offers pathways to automated high-throughput packaging. Using this method, we show optically and electrically packaged quantum memory modules integrating all required qubit controls on chip, operating at millikelvin temperatures with <3 dB losses achievable from fiber to quantum memory for the TE 0 mode at a wavelength of 737 nm.

Bernson, Robert [Tyndall National Institute, Cork ↗

Photonic analog of Mollow triplet with on-chip photon-pair generation in dressed modes

Making analogy with atomic physics is a powerful tool for photonic technology, witnessed by the recent development in topological photonics and non-Hermitian photonics based on parity–time symmetry. The Mollow triplet is a prominent atomic effect with both fundamental and technological importance. Here we demonstrate the analog of the Mollow triplet with quantum photonic systems. Photonic entanglement is generated with spontaneous nonlinear processes in dressed photonic modes, which are introduced through coherent multimode coupling. We further demonstrate the possibility of the photonic system to realize different configurations of dressed states, leading to modification of the Mollow triplet. Our work would enable the investigation of complex atomic processes and the realization of unique quantum functionalities based on photonic systems.

Cui, Chaohan↗

On-chip entangled photon source

Various technologies pertaining to an on-chip entangled photon source are described herein. A light source is used to pump two resonator cavities that are resonant at two different respective wavelengths and two different respective polarizations. The resonator cavities are coupled to a four-wave mixing cavity that receives the light at the two wavelengths and outputs polarization-entangled photons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interpretable inverse-designed cavity for on-chip nonlinear photon pair generation

Inverse design is a powerful tool in wave physics for compact, high-performance devices. To date, applications in photonics have mostly been limited to linear systems and it has rarely been investigated or demonstrated in the nonlinear regime. In addition, the “black box” nature of inverse design techniques has hindered the understanding of optimized inverse-designed structures. We propose an inverse design method with interpretable results to enhance the efficiency of on-chip photon generation rate through nonlinear processes by controlling the effective phase-matching conditions. We fabricate and characterize a compact, inverse-designed device using a silicon-on-insulator platform that allows a spontaneous four-wave mixing process to generate photon pairs at a rate of 1.1 MHz with a coincidence to accidental ratio of 162. Our design method accounts for fabrication constraints and can be used for scalable quantum light sources in large-scale communication and computing applications.

42 ENGINEERING↗

Analysis of ultra-high sensitivity configuration in chip-integrated photonic crystal microcavity bio-sensors

We analyze the contributions of quality factor, fill fraction, and group index of chip-integrated resonance microcavity devices, to the detection limit for bulk chemical sensing and the minimum detectable biomolecule concentration in biosensing. We analyze the contributions from analyte absorbance, as well as from temperature and spectral noise. Slow light in two-dimensional photonic crystals provide opportunities for significant reduction of the detection limit below 1 × 10{sup −7} RIU (refractive index unit) which can enable highly sensitive sensors in diverse application areas. We demonstrate experimentally detected concentration of 1 fM (67 fg/ml) for the binding between biotin and avidin, the lowest reported till date.

36 MATERIALS SCIENCE↗

Self-alignment features for III-V ridge process and angled facet die

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

42 ENGINEERING↗

Self-alignment features for III-V ridge process and angled facet die

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

Barwicz, Tymon↗

Exceptional coupling in photonic anisotropic metamaterials for extremely low waveguide crosstalk

Electromagnetic coupling is ubiquitous in photonic systems and transfers optical signals from one device to the other, creating crosstalk between devices. While this allows the functionality of some photonic components such as couplers, it limits the integration density of photonic chips, and many approaches have been proposed to reduce the crosstalk. However, due to the wave nature of light, complete elimination of crosstalk between closely spaced, identical waveguides is believed to be impossible and has not been observed experimentally. Here we show an exceptional coupling that can completely suppresses the crosstalk utilizing highly anisotropic photonic metamaterials. The anisotropic dielectric perturbations in the metamaterial mutually cancel the couplings from different field components, resulting in an infinitely long coupling length. We demonstrate the extreme suppression of crosstalk via exceptional coupling on a silicon-on-insulator platform, which is compatible with a complementary metal-oxide-semiconductor process. The idea of exceptional coupling with anisotropic metamaterials can be applied to many other electromagnetic devices, and it could drastically increase the integration density of photonic chips.

Mia, Md Borhan (ORCID:0000000320851331)↗