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Photomask and pattern programming manual

A user's manual for a set of computer programs written in FORTRAN for the layout and generation of photomasks is presented. A limited amount of related information on photomasks, their design, and use is included. Input to the programs includes data describing the photomask design. Possible outputs include plots of the layout and a magnetic tape for controlling generation of the photomask by a pattern generator.

Kirschman, R. K.

Photomask and pattern programs

Package of computer programs helps designers with layout and graphics of photomasks. Photomasks are specifically useful to applications involving fine reproducibility, repetition, and fabrication on planar surfaces of materials, items fabricated from photomasks include circuit boards, magnetic bubble devices and integrated optic circuits.

Kirschman, R. K.

Calibration of single particle sizing velocimeters using photomask reticles

The development of photomask reticle calibration standards for single particle instruments is discussed. The calibration method studied involves the use of photomask reticles where the particle artifacts are actually disks of chrome thin film in the clear field reticles produced by photolithography and etching processes. Consideration is given to various aspects of theory, design, and performance.

Hirleman, E. D.

Fabrication of poly(ethylene glycol) hydrogel microstructures using photolithography

The fabrication of hydrogel microstructures based upon poly(ethylene glycol) diacrylates, dimethacrylates, and tetraacrylates patterned photolithographically on silicon or glass substrates is described. A silicon/silicon dioxide surface was treated with 3-(trichlorosilyl)propyl methacrylate to form a self-assembled monolayer (SAM) with pendant acrylate groups. The SAM presence on the surface was verified using ellipsometry and time-of-flight secondary ion mass spectrometry. A solution containing an acrylated or methacrylated poly(ethylene glycol) derivative and a photoinitiator (2,2-dimethoxy-2-phenylacetophenone) was spin-coated onto the treated substrate, exposed to 365 nm ultraviolet light through a photomask, and developed with either toluene, water, or supercritical CO2. As a result of this process, three-dimensional, cross-linked PEG hydrogel microstructures were immobilized on the surface. Diameters of cylindrical array members were varied from 600 to 7 micrometers by the use of different photomasks, while height varied from 3 to 12 micrometers, depending on the molecular weight of the PEG macromer. In the case of 7 micrometers diameter elements, as many as 400 elements were reproducibly generated in a 1 mm2 square pattern. The resultant hydrogel patterns were hydrated for as long as 3 weeks without delamination from the substrate. In addition, micropatterning of different molecular weights of PEG was demonstrated. Arrays of hydrogel disks containing an immobilized protein conjugated to a pH sensitive fluorophore were also prepared. The pH sensitivity of the gel-immobilized dye was similar to that in an aqueous buffer, and no leaching of the dye-labeled protein from the hydrogel microstructure was observed over a 1 week period. Changes in fluorescence were also observed for immobilized fluorophore labeled acetylcholine esterase upon the addition of acetyl acholine.

NASA Discipline Life Sciences Technologies

Mechanically graded granular scaffolds for osteochondral tissue engineering

Engineered scaffolds designed to approximate the mechanical microenvironment of the osteochondral unit often address this complexity using discrete, two-phase architectures that introduce mechanical discontinuities and interfacial stress concentrations rather than a contiguous stiffness transition. To address this challenge, we created a photoannealed polyethylene glycol (PEG) granular scaffold with a spatially controlled stiffness gradient within a cell-permissive, macroporous architecture. Stiffness was dictated by photoannealing microgels using a photomask. We tuned void volume and available surface area by varying microgel diameter and tested how mesenchymal stromal cells (MSCs) interpret local mechanical environments. MSCs exhibited position-dependent differences in morphology, cytoskeletal structure, matrix deposition, and lineage-specific gene expression within the gradient scaffolds. Softer regions supported rounded cell morphology and deposition of a glycosaminoglycan-rich matrix, whereas stiffer regions promoted cell elongation, increased cytoskeletal tension, and expression of mineral-associated markers. Gradients formed from smaller microgels magnified these spatial responses by increasing cellular confinement and adhesion site availability. Disruption of actomyosin contractility eliminated these regional differences, demonstrating that MSCs rely on tension-dependent mechanotransduction to interpret the gradient. These findings reveal that coupling microgel architecture with continuous stiffness transitions provides a tractable platform to study multiscale mechanobiologic regulation and spatially guide osteochondral tissue formation.

Biological and medical sciences

Mask-side Hyper-NA EUV imaging on the SHARP microscope

Hyper-NA, the prospective successor to high-numerical aperture (NA) extreme ultraviolet lithography (EUVL) could be inserted soon after 2030. Hyper-NA poses a number of challenges, including reduced depth of focus, amplified mask three-dimensional effects, and increased mask-side angular range. A Hyper-NA capable extreme ultraviolet (EUV) mask-imaging tool can address these challenges and accelerate research and development toward Hyper-NA. The Sharp High-Numerical Aperture Actinic Reticle Review Project (SHARP) EUV mask microscope is supporting mask-side high-NA imaging since 2015. Implementing mask-side Hyper-NA imaging in 2024 enables research and development toward the corresponding nodes of EUVL. Hyper-NA zoneplates at 0.75 4x/8x NA with a 6.7-deg chief ray angle and 0.85 4x/8x NA with a 7.4-deg chief ray angle are added to the SHARP microscope. Imaging at mask-side Hyper-NA is demonstrated. Imaging of 5-nm half-pitch (wafer scale) horizontal lines and spaces is demonstrated using dipole illumination. Imaging of 5-nm half-pitch (wafer scale) vertical lines and spaces is demonstrated using frequency-doubled imaging of 40-nm hp (mask scale) lines and spaces. Normalized image log slope (NILS) and modulation of Hyper-NA image data match closely to simulations for horizontal lines and spaces. A reduction in NILS of 0.3 or less is observed for vertical lines and spaces in the two-beam imaging regime. Through-focus image data are discussed, comparing different dipole sources and mask-side NAs. Mask-side Hyper-NA photomask imaging has been implemented and demonstrated on the SHARP microscope and is now available to users of the instrument.

Benk, Markus

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Mandal, R. P.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.

Planar multijunction high voltage solar cell chip

A new innovative planar multijunction solar cell chip for concentrated sunlight applications is proposed. The chip consists of many voltage-generating regions, called unit cells, which are connected in series within a single silicon wafer, thereby providing a high open-circuit voltage at multiple sun illumination levels. The unit cells are fabricated on 75 micron thick p-type single crystal silicon substrate. Each chip consists of 1.42 x 9.63 mm n(+)/p collecting junctions on the back of the wafer, while the illuminated front surface area is divided into 0.3 micron deep n(+) regions. The fabrication sequence includes standard degreasing and cleaning procedures, double-sided alignment photomasking, introduction of boron and phosphorus impurities, and photolithography. The open circuit voltage of the chip increased rapidly with illumination up to about 4 AM1 suns, and then began to saturate at the sum of the individual unit cell voltages of 3.5 above 4 AM1 suns. A short circuit density per unit cell of 300 mA/sq cm at 20 AM1 suns was observed.

Valco, G. J.

High-voltage solar-cell chip

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Kapoor, V. J.

Low cost paths to binary optics

Application of binary optics has been limited to a few major laboratories because of the limited availability of fabrication facilities such as e-beam machines and the lack of standardized design software. Foster-Miller has attempted to identify low cost approaches to medium-resolution binary optics using readily available computer and fabrication tools, primarily for the use of students and experimenters in optical computing. An early version of our system, MacBEEP, made use of an optimized laser film recorder from the commercial typesetting industry with 10 micron resolution. This report is an update on our current efforts to design and build a second generation MacBEEP, which aims at 1 micron resolution and multiple phase levels. Trails included a low cost scanning electron microscope in microlithography mode, and alternative laser inscribers or photomask generators. Our current software approach is based on Mathematica and PostScript compatibility.

Nelson, Arthur

Binary pseudo-random array standard for extreme ultraviolet lithography tool characterization

Extreme ultraviolet (EUV) imaging tools play a crucial role in EUV lithography. Achieving high accuracy in EUV metrology is essential for advanced semiconductor manufacturing. A thorough characterization of the instrumentation in use is required. Binary pseudo-random arrays (BPRAs) are an established standard for calibrating and characterizing optical instruments in the frequency domain. Here, we expand the BPRA standard to applications in EUV imaging. To extend the technology to the EUV spectral range, a high-resolution BPRA target with the smallest feature size of 40 nm is developed. The EUV BPRA target establishes an in situ and portable calibration and alignment standard for EUV imaging. The target is patterned by means of electron-beam lithography, using a nickel absorber with a thickness of 39 nm. The substrate is a 4″ silicon wafer with a molybdenum/silicon multilayer coating. To demonstrate the efficacy of the target and develop the instrument calibration protocol, the target is imaged on the Sharp Hyper-NA Actinic Reticle Review Project EUV mask microscope. Power spectral density (PSD) data are presented. The characteristics of the imaging system are imprinted on the PSD. The modulation transfer function is extracted from the PSD data. A partially coherent imaging model is used as a reference to the experimental results.

BPRA