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Results for “photolithographic processing”

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At least 19 records

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NASA NTRS2004

Fabrication of Channels for Nanobiotechnological Devices

A method, now undergoing development, of forming nanochannels in planar substrates is intended to enable the fabrication of advanced fluidic devices that could be integrated with complementary metal oxide semiconductor (CMOS) electronic circuits. Such integral combinations of fluidic and electronic components ("laboratory-on-a-chip" devices) could be used, for example, to detect individual molecules of deoxyribonucleic acid (DNA) and proteins. The width of a channel in such a device would be chosen so that molecules of the species of interest would move along the channel in single file. In this method, the fabrication of channels includes the use of such CMOS-compatible processes as chemical-mechanical polishing and oxide deposition. The layout of the channels in the substrate plane is determined by a single photolithographic process, but it is not a nanoscale lithographic process, and this process is not relied upon to define the thickness and width of the channels. Stating it from a slightly different perspective, unlike in the prior fabrication of electronic and fluidic devices involving the use of lithography to define microscale features, this process does not include the use of lithography to define nanoscale features. It is this aspect of the method that enables simplification of the process and, hence, a decrease in cost.

Lee, Choonsup↗

NASA NTRS2016

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

superconducting films↗

NASA NTRS2016

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

superconducting films↗

NASA NTRS2011

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

superconducting films↗

NASA NTRS2000

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Beheim, Glenn M.↗

NASA NTRS1990

Photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films

The response is reported of thin films of YBa2Cu3O(7-delta) with either a very grainy or a smooth epitaxial morphology to visible radiation. SrTiO3 substrates were employed for both types of films. The grainy films were formed by sequential multi-layer electron beam evaporation while the epitaxial films were formed by laser ablation. Both films were patterned into H shaped detectors via a negative photolithographic process employing a Br/ethanol etchant. The bridge region of the H was 50 microns wide. The patterned films formed by laser ablation and sequential evaporation had critical temperatures of 74 K and 72 K respectively. The bridge was current biased and illuminated with chopped He-Ne laser radiation and the voltage developed in response to the illumination was measured. A signal was detected only above the critical temperature and the peak of the response coincided with the resistive transition for both types of films although the correspondence was less exact for the grainy film. The details of the responses and their analysis are presented.

Valco, G. J.↗

NASA NTRS1990

Photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films

Valco, G. J.↗

NASA NTRS1990

128 layer HYMOSS module fabrication issues

The fabrication of the first Z-technology module with 128 active layers of readout electronic circuitry is being pursued. Several issues which will be investigated regarding the 128-layer module build, such as photolithographic processing at the edge of the module (edge effects) and module buttability, are discussed in this paper. Other topics which are covered apply to future applications of fully populated HYMOSS modules. These topics include possible reductions of thermal mass for quick cool-down time applications and improvements of end-to-end yield for low-cost applications.

Ludwig, David E.↗

NASA NTRS1992

A fixed tuned broadband matching structure for submillimeter SIS receivers

We have designed, fabricated, and tested a quasi-optical spiral antenna mixer with a Nb/AlO(x)/Nb tunnel junction. This design incorporates a hybrid antenna fed by a planar logarithmic spiral antenna to couple to the radiation field, as previously done with Pb based devices, as well as a newly designed matching circuit. This matching circuit is a relatively complex structure requiring several layers of photolithographic processing on top of the actual tunneling device. Computer modeling of the device predicted the measured bandwidth to within 8 percent, making scale model measurements unnecessary. We have obtained a good match from 210 GHz to 460 GHz between the antenna and a relatively large area (1.25 by 1.25 sq microns) tunnel junction with omega R(sub N) C approx. = 2 - 4.4. This compares to simple inductive stubs that attain only a few percent of total bandwidth in the submillimeter band or inductively tuned SIS arrays with an upper limit of operating frequencies well below the submillimeter band. Noise temperatures were measured at 345 GHz, 426 GHz, and 492 GHz yielding double sideband noise temperatures at 200 K, 220 K, and 500 K, respectively.

Buettgenbach, Thomas H.↗

NASA NTRS1992

A fixed tuned broadband matching structure for submillimeter SIS receivers

The authors have designed, fabricated, and tested a quasi-optical submillimeter wave receiver with an Nb/AlO(x)/Nb tunnel junction. This design incorporates a hybrid antenna fed by a planar logarithmic spiral structure in order to couple to the radiation field from the telescope. The novel matching circuit requires several layers of photolithographic processing on top of the actual tunneling device. Computer modeling of the device correctly predicted the measured bandwidth and the characteristic frequencies to within 8 percent. A good match has been obtained from 200 to 475 GHz between the antenna and a relatively large area (1 sq mm) tunnel junction with omega(R(n))C about 2-4. Noise measurements at 318 GHz, 395 GHz, 426 GHz, and 492 GHz yielded uncorrected double sideband receiver noise temperatures of 200 K, 230 K, 220 K, and 500 K, respectively. Using the same optics, coupling efficiencies between the receiver and the Caltech Submillimeter Telescope were found to have values approaching those achieved by the best waveguide-horn-based receiver systems.

Buttgenbach, Thomas H.↗

NASA NTRS2001

Remote, Noncontact Strain Sensing by Laser Diffraction Developed

A system was developed at the NASA Glenn Research Center for continually monitoring, in real time, the in-plane strain tensor in opaque solids during high-temperature, long-term mechanical testing. The simple, noncontacting, strain-sensing methodology should also be suitable for measurement in hostile environments. This procedure has obvious advantages over traditional, mechanical, contacting techniques, and it is easier to interpret than moir and speckle interferometric approaches. A two-dimensional metallic grid of micrometer dimensions is applied to a metallographically prepared gauge section on the surface of a tensile test specimen by a standard photolithographic process. The grid on the fixtured specimen is interrogated by an He-Ne laser, and the resulting diffraction pattern is projected backwards onto a translucent screen. A charge-coupled device (CCD) camera is used to image the first-order diffraction peaks from the translucent screen. A schematic representation of the system is shown in the figure.

Freedman, Marc R.↗

NASA NTRS2020

Progress of Coating Stress Compensation of Silicon Mirrors for Lynx X-ray Telescope Mission Concept Using Thermal Oxide Patterning Method

A thermal oxide patterning method has proven to be effective for correcting coating-stress-induced distortion on flat silicon wafers. We report progress on developing this method for correcting curved silicon mirrors distorted by front-side iridium coatings. Owing to the difference in geometry, a finite element model has been established to calculate the appropriate duty cycle maps in thermal oxide hexagon patterns used for compensation. In addition, a photolithographic process, along with three-dimensional printed equipment, has been developed for creating patterns precisely on the back side of curved mirrors. The developed method has been used to recover the original surface shape of two silicon mirrors which are 100-mm long, 0.5-mm thick, having 312-mm radius of curvature, and 30 deg in azimuthal span (Wolter-I geometry). These mirrors’ front sides are sputter-coated by 20-nm iridium layers with ∼-70 N∕m integrated stress. Measurement results show that the developed method can mitigate coating-induced distortion by a factor of ∼5 in RMS height and ∼4 in RMS slope error, corresponding to ∼0.5 arc sec RMS slope error. Residual errors after correction are dominated by midfrequency ripples created during the annealing process, which will be resolved in the future. The presented method is precise and inexpensive and a potential candidate for resolving the coating stress issue for Lynx optics in the future.

x-ray↗

NASA NTRS1994

MANN: A program to transfer designs for diffractive optical elements to a MANN photolithographic mask generator

There are two basic areas of interest for diffractive optics. In the first, the property of wavefront division is exploited for achieving optical fanout, analogous to the more familiar electrical fanout of electronic circuitry. The basic problem here is that when using a simple uniform diffraction grating the energy input is divided unevenly among the output beams. The other area of interest is the use of diffractive elements to replace or supplement standard refractive elements such as lenses. Again, local grating variations can be used to control the amount of bending imparted to optical rays, and the efficiency of the diffractive element will depend on how closely the element can be matched to the design requirements. In general, production restrictions limit how closely the element approaches the design, and for the common case of photolithographic production, a series of binary masks is required to achieve high efficiency. The actual design process is much more involved than in the case of elements for optical fanout, as the desired phase of the optical wavefront over some reference plane must be specified and the phase alteration to be introduced at each point by the diffraction element must be known. This generally requires the utilization of a standard optical design program. Two approaches are possible. In the first approach, the diffractive element is treated as a special type of lens and the ordinary optical design equations are used. Optical design programs tend to follow a second approach, namely, using the equations of optical interference derived from holographic theory and then allowing the introduction of phase front corrections in the form of polynomial equations. By using either of these two methods, diffractive elements can be used not only to compensate for distortions such as chromatic or spherical aberration, but also to perform the work of a variety of other optical elements such as null correctors, beam shapers, etc. The main focus of the project described in this report is how the design information from the lens design program is incorporated into the photolithographic process. It is shown that the MANN program, a photolithographic mask generator, fills the need for a link between lens design programs and mask generation controllers.The generated masks can be used to expose a resist-coated substrate which is etched and then must be re-coated, re-exposed, and re-etched for making copies, just as in the electronics industry.

Matthys, Donald R.↗

NASA NTRS2007

Far-Infrared Blocked Impurity Band Detector Development

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

Hogue, H. H.↗

NASA NTRS2011

Material Development of Faraday Cup Grids for the Solar Probe Plus Mission

The Solar Probe Plus mission will launch a spacecraft to the Sun to study it's outer atmosphere. One of the instruments on board will be a Faraday Cup (FC) sensor. The FC will determine solar wind properties by measuring the current produced by ions striking a metal collector plate. It will be directly exposed to the Sun and will be subject to the temperature and radiation environment that exist within 10 solar radii. Conducting grids within the FC are biased up to 10 kV and are used to selectively transmit particles based on their energy to charge ratio. We report on the development of SiC grids. Tests were done on nitrogen-doped SiC starting disks obtained from several vendors, including annealing under vacuum at 1400 C and measurement of their electrical properties. SiC grids were manufactured using a photolithographic and plasma-etching process. The grids were incorporated into a prototype FC and tested in a simulated solar wind chamber. The energy cutoffs were measured for both proton and electron fluxes and met the anticipated sensor requirements.

Volz, M. P.↗

NASA NTRS1989

BIN Diode For Submillimeter Wavelengths

Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators.

Maserjian, J.↗

NASA NTRS2006

Selective Plasma Deposition of Fluorocarbon Films on SAMs

A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

Crain, Mark M., III↗

NASA NTRS1985

The 1.2 micron CMOS technology

A set of test structures was designed using the Jet Propulsion Laboratory (JPL) test chip assembler and was used to evaluate the first CMOS-bulk foundry runs with feature sizes of 1.2 microns. In addition to the problems associated with the physical scaling of the structures, this geometry provided an additional set of problems, since the design files had to be generated in such a way as to be capable of being processed through p-well, n-well, and twin-well processing lines. This requirement meant that the files containing the geometric design rules as well as the structure design files had to produce process-insensitive designs, a requirement that does not apply to the more mature 3.0-micron CMOS feature size technology. Because of the photolithographic steps required with this feature size, the maximum allowable chip size was 10 x 10 mm, and this chip was divided into 24 project areas, with each area being 1.6 x 1.6 mm in size. The JPL-designed structures occupied 13 out of the 21 allowable project sizes and provided the only test information obtained from these three preliminary runs. The structures were used to successfully evaluate three different manufacturing runs through two separate foundries.

Pina, C. A.↗