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All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A visible to near-infrared nanocrystalline organic photodetector with ultrafast photoresponse

Organic photoelectron conversion devices, due to their solution process and wide use in portable devices, have attracted intensive interest. In this work, a newly developed active layer of D18:Y6 is used to fabricate an organic photodetector and the device of ITO/PEDOT:PSS/D18:Y6/Phen-NaDPO/Ag shows a responsivity of 680 mA W –1 and a detectivity of 6.35 × 10 13 Jones (1 Jones = 1 cm Hz 1/2 W –1 ) at a wavelength of 850 nm. Additionally, this device shows a wide linear dynamic range of 120 dB, indicating a potential near-infrared region (NIR) detector system. Owing to the minimal exciton binding energy of 37.6 meV for Y6, a desirable energy offset for efficient electron–hole pair dissociation and an ultrafast charge transfer of ~58 ps at the interface of D18:Y6, the obtained organic photodetector has demonstrated a photoresponse time as fast as 1.8 μs upon laser light excitation without an external driven voltage. More importantly, D18 shows a preferred out-of-plane orientation with strong intensities and Y6 exhibits a preferred orientation along the in-plane direction on lamellar stacking, which facilitates charge transport. This work has demonstrated significant progress in exploring D18:Y6 NIR organic devices with a wide photosensitivity linearity and ultrafast photoresponse.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2007

Wide-Band, High-Quantum-Efficiency Photodetector

A design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of optiA design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of opti-

Jackson, Deborah↗
DOE OSTI2020

Strain-engineered high-responsivity MoTe 2 photodetector for silicon photonic integrated circuits

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide materials due to their large optical bandgap. Furthermore, we demonstrate a MoTe 2 -based photodetector featuring strong photoresponse (responsivity = 0.5 A/W -1 ) operating at 1550 nm in silicon photonics enabled by strain engineering the 2D material. Non-planarized waveguide structures show a locally-induced bandgap change of 0.2 eV inside MoTe 2 , resulting in large photo-response, in an otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this photodetector shows a ~100X improved dark current, enabling an efficient noise equivalent power of 90 pW/Hz -0.5 . Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

47 OTHER INSTRUMENTATION↗
NASA NTRS2006

Photodetector Arrays for Multicolor Visible/Infrared Imaging

Monolithic focal-plane arrays of photodetectors capable of imaging the same scenes simultaneously in multiple wavelength bands in the visible and infrared spectral regions have been proposed. In prior visible/infrared imaging systems, it has been standard practice to use separate optical trains to form images in visible and infrared wavelength bands on separate visibleand infrared-photodetector arrays. Because the proposal would enable the detection of images in multiple wavelength bands on the same focal plane, the proposal would make it unnecessary to use multiple optical trains. Hence, multispectral imaging systems could be made more compact and the difficulties of aligning multiple optical trains would be eliminated. Each pixel in an array according to the proposal would contain stacks of several photodetectors. The proposal is a logical extension of prior concepts of arrays of stacked photodetectors for imaging in two or three wavelength bands. For example, such an array was described in Three-Color Focal-Plane Array of Infrared QWIPs (NPO-20683), NASA Tech Briefs, Vol. 24, No. 5 (May 2000), page 26a. In one proposed design, (see figure), each pixel would be divided into four subpixels, one being dedicated to a visible- and-near-infrared (V) band, one to a combination of the V band and a verylong- wavelength infrared (VLWIR) band, one to a combination of the V band and a long-wavelength infrared (LWIR) band, and one to a combination of the V band and a medium-wavelength infrared (MWIR) band. For this purpose, each subpixel would include a GaAs-based positive/intrinsic/negative (PIN) photodiode for detection in the V band stacked with three quantum-well infrared photodetectors (QWIPs), each optimized for one of the aforementioned infrared bands. The stacks of photodetectors in all the subpixels would be identical except for the electrical connections, which would be configured to activate the various wavelengthband combinations.

Gunapala, Sarath↗
DOE OSTI2024

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO 3 /β–Ga 2 O 3 Solar–Blind Photodetectors

The fabrication and characterization of metal/BaTiO 3 /β-Ga 2 O 3 solar-blind photodetectors are reported. β-Ga 2 O 3 is a promising material for solar-blind photodetectors due to its large bandgap and the availability of low defect-density melt-grown substrates. In this work, structures are introduced that employ high-permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. It is shown that integrating the high-k dielectric BaTiO 3 reduces the dark current by ≈10 4 , all but eliminates illumination induced Schottky barrier lowering, and increases the UV–vis rejection ratio by a factor greater than 9 × 10 3 compared to a Schottky photodetector. It is hypothesized that the high permittivity of the dielectric overcomes the influence of self-trapped holes in Ga 2 O 3 to reduce the peak electric field at the dielectric/metal interface, thereby eliminating the effects of Schottky barrier lowering on illuminated β-Ga 2 O 3 photodetectors. Additionally, it is hypothesized that the increase in the UV–vis rejection ratio is caused by the “dead layer” that forms at the BaTiO 3 /Pt interface.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

We experimentally demonstrate a low-cost transfer process of GeSn ribbons to insulating substrates for short-wave infrared (SWIR) sensing/imaging applications. By releasing the original compressive GeSn layer to nearly fully relaxed state GeSn ribbons, the room-temperature spectral response of the photodetector is further extended to 3.2 μm, which can cover the entire SWIR range. Compared with the as-grown GeSn reference photodetectors, the fabricated GeSn ribbon photodetectors have a fivefold improvement in the light-to-dark current ratio, which can improve the detectivity for high-performance photodetection. The transient performance of a GeSn ribbon photodetector is investigated with a rise time of about 40 μs, which exceeds the response time of most GeSn (Ge)-related devices. In addition, this transfer process can be applied on various substrates, making it a versatile technology that can be used for various applications ranging from optoelectronics to large-area electronics. These results provide insightful guidance for the development of low-cost and high-speed SWIR photodetectors based on Sn-containing group IV low-dimensional structures.

42 ENGINEERING↗
NASA NTRS2006

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Savich, Gregory R.↗
NASA NTRS2003

Curved Focal-Plane Arrays Using Back-Illuminated High-Purity Photodetectors

Curved-focal-plane arrays of back-illuminated silicon-based photodetectors are being developed. The basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (e.g., a photographic film or an array of photodetectors) conform to a curved focal surface, instead of following the customary practice of designing the optics to project an image onto a flat focal surface. Eyes are natural examples of optical systems that have curved focal surfaces on which image sensors (retinas) are located. One prior approach to implementation of this concept involves the use of curved-input-surface microchannel plates as arrays of photodetectors. In comparison with microchannel plates, these curved-focal-plane arrays would weigh less, operate at much lower voltages, and consume less power. It should also be possible to fabricate the proposed devices at lower cost. It would be possible to fabricate an array of photodetectors and readout circuitry in the form of a very-large-scale integrated (VLSI) circuit on a curved focal surface, but it would be difficult and expensive to do so. In a simple and inexpensive alternate approach, a device (see figure) would have (1) a curved back surface, onto which light would be focused; and (2) a flat front surface, on which VLSI circuitry would be fabricated by techniques that are well established for flat surfaces. The device would be made from ultrapure silicon, in which it is possible to form high-resistivity, thick photodetectors that are fully depleted through their thicknesses. (As used here, "thick means having a thickness between a fraction of a millimeter and a few millimeters.) The back surface would be polished to the curvature of the focal surface of the intended application. To enable the collection of charge carriers excited by photons near the back surface or in the bulk of the device, it would be necessary to form a transparent or semitransparent back-surface electrode, possibly by delta doping. [Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac function (impulse function): the dopant is concentrated in a very thin layer - nominally, a single atomic layer.]

Nikzad, Shouleh↗
DOE OSTI2022

Vertical Architecture Solution-Processed Quantum Dot Photodetectors with Amorphous Selenium Hole Transport Layer

Colloidal quantum dots (CQDs) provide wide spectral tunability and high absorption coefficients owing to quantum confinement and large oscillator strengths, which along with solution processability, allow a facile, low-cost, and room-temperature deposition technique for the fabrication of photonic devices. However, many solution-processed CQD photodetector devices demonstrate low specific-detectivity and slow temporal response. To achieve improved photodetector characteristics, limiting carrier recombination and enhancing photogenerated carrier separation are crucial. In this study, we develop and present an alternate vertical-stack photodetector wherein we use a solution-processed quantum dot photoconversion layer coupled to an amorphous selenium (a-Se) wide-bandgap charge transport layer that is capable of exhibiting single-carrier hole impact ionization and is compatible with active-matrix readout circuitry. This a-Se chalcogenide transport layer enables the fabrication of high-performance and reliable solution-processed quantum dot photodetectors, with enhanced charge extraction capabilities, high specific detectivity (D* ~ 0.5–5 × 10 12 Jones), fast 3 dB electrical bandwidth (3 dB BW ~ 22 MHz), low dark current density (J D ~ 5–10 pA/cm 2 ), low noise current (i n ~ 20–25 fW/Hz 1/2 ), and high linear dynamic range (LDR ~130–150 dB) across the measured visible electromagnetic spectrum (~405–656 nm).

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Tellurene Photodetector with High Gain and Wide Bandwidth

Two-dimensional (2D) semiconductors have been extensively explored as a new class of materials with great potential. In particular, black phosphorus (BP) has been considered to be a strong candidate for applications such as high-performance infrared photodetectors. However, the scalability of BP thin film is still a challenge, and its poor stability in the air has hampered the progress of the commercialization of BP devices. Herein, we report the use of hydrothermal-synthesized and air-stable 2D tellurene nanoflakes for broadband and ultrasensitive photodetection. The tellurene nanoflakes show high hole mobilities up to 458 cm 2 /V·s at ambient conditions, and the tellurene photodetector presents peak extrinsic responsivity of 383 A/W, 19.2 mA/W, and 18.9 mA/W at 520 nm, 1.55 μm, and 3.39 μm light wavelength, respectively. Because of the photogating effect, high gains up to 1.9 × 10 3 and 3.15 × 10 4 are obtained at 520 nm and 3.39 μm wavelength, respectively. At the communication wavelength of 1.55 μm, the tellurene photodetector exhibits an exceptionally high anisotropic behavior, and a large bandwidth of 37 MHz is obtained. The photodetection performance at different wavelength is further supported by the corresponding quantum molecular dynamics (QMD) simulations. Our approach has demonstrated the air-stable tellurene photodetectors that fully cover the short-wave infrared band with ultrafast photoresponse.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Non‐Traditional Positively‐Biased Narrow‐Band Perovskite Single‐Crystal Photodetectors Enabled by Interfacial Engineering

Abstract The positive bias in theory narrows down the depletion region and thus results in significant charge injection, which should be detrimental to charge generation and collection performance for traditional photodetectors. Here, instead, it is found that the external quantum efficiency (EQE) is increased by more than 50 times when the photodetector is positively biased. A positive bias of +6 V drives ion migration of Br − and Cs + towards the anode and cathode, respectively, leading to self‐doping within bulk single crystals to form an advantageous p‐i‐n junction for better charge collection in the devices. Meanwhile, the injected holes are allowed to tunnel through the cesium lead bromide/fullerene interface to reach the cathode which also significantly contributes to the enhancement of EQE in the forward‐biased devices. The positively‐biased narrow‐band (full width at half maxima (FWHM) = 16 nm) photodetectors exhibit a specific detectivity of 6.5 × 10 10 Jones at 550 nm, along with the −3 dB cutoff frequency of 2776 Hz. By manipulating charge injection and ion migration using interfacial engineering, a class of non‐traditional, positively‐biased, and highly narrow‐band photodetectors is demonstrated, which offers an alternative design strategy for imaging, biosensing, automatic control, and optical communication.

Li, Junchi↗
NASA NTRS1998

Quantum Well Infrared Photodetectors for Low Background Applications

High performance long-wavelength GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors for low background applications have been demonstrated. This is the first theoretical analysis of quantum well infrared photodetectors for low background applications and the detectivity D* of 6 x 10(exp 13) cm.square root of Hz/W has been achieved at T = 40 K with 2 x 10(exp 9) photons/cm2/sec background. In addition, this paper describes the demonstration of mid-wavelength/long-wavelength dualband quantum well infrared photodetectors and long-wavelength/very long-wavelength dualband quantum well infrared photodetectors in 4-26 micrometers wavelength region.

Gunapala, S. D.↗
NASA NTRS2004

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Savich, Gregory R.↗
NASA NTRS2007

Complex Type-II Interband Cascade MQW Photodetectors

Multiple-quantum-well (MQW) photodetectors of a proposed type would contain active regions comprising multiple superlattice subregions. These devices would have complex structures: The superlattice of each subregion would be designed for enhanced absorption of photons in a desired wavelength band (typically in the infrared) and multiple subregions of different design would be cascaded for multicolor operation. The designs of these photodetectors would take advantage of the characteristic alignment of the edges of the electron-energy bands in type-II quantum-well structures: Within each finite superlattice, interband transitions would be used for detecting photons, and between finite superlattices, intraband relaxation and interband tunneling would be used for transport of charge carriers, all such as to enable detection of normally incident photons. Absorption of photons in the active region of a photodetector according to the proposal could be significantly enhanced by designing the superlattice/MQW structures to contain closely spaced energy states. The photodetector could be operated with a small bias to facilitate transport of charge carriers. The superlattices could be somewhat chirped, with a preferred transport direction.

Yang, Rui↗
NASA NTRS2007

Photodetectors on Coronagraph Mask for Pointing Control

It has been proposed to install a symmetrical array of photodetectors about the center of the mask of a coronagraph of the type used to search for planets orbiting remote stars. The purpose of this installation is to utilize the light from a star under observation as a guide in pointing the telescope. Simple arithmetic processing of the outputs of the photodetectors would provide indications of the lateral position of the center of the mask relative to the center of the image of the star. These indications could serve as pointing-control feedback signals for adjusting the telescope aim to center the image of the star on the mask. The widths of central mask areas available for placement of photodetectors differ among coronagraph designs, typically ranging upward from about 100 m. Arrays of photodetectors can readily be placed within areas in this size range. The number of detectors in an array could be as small as 4 or as large as 64. The upper limit on the number of detectors would be determined according to the extent of the occulting pattern and the number of functionalities, in addition to pointing control, to be served by the array.

Balasubramanian, Kunjithapatham↗
NASA NTRS2004

Curved-Focal-Plane Arrays Using Deformed-Membrane Photodetectors

A versatile and simple approach to the design and fabrication of curved-focal-plane arrays of silicon-based photodetectors is being developed. This approach is an alternative to the one described in "Curved Focal-Plane Arrays Using Back- Illuminated High-Purity Photodetectors" (NPO-30566), NASA Tech Briefs, Vol. 27, No. 10 (October 2003), page 10a. As in the cited prior article, the basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (in this case, an array of photodetectors) conform to a curved focal surface, instead of designing the optics to project an image onto a flat focal surface. There is biological precedent for curved-focal-surface designs: retinas - the image sensors in eyes - conform to the naturally curved focal surfaces of eye lenses. The present approach is applicable to both front-side- and back-side-illuminated, membrane photodetector arrays and is being demonstrated on charge-coupled devices (CCDs). The very-large scale integrated (VLSI) circuitry of such a CCD or other array is fabricated on the front side of a silicon substrate, then the CCD substrate is attached temporarily to a second substrate for mechanical support, then material is removed from the back to obtain the CCD membrane, which typically has a thickness between 10 and 20 m. In the case of a CCD designed to operate in back-surface illumination, delta doping can be performed after thinning to enhance the sensitivity. This approach is independent of the design and method of fabrication of the front-side VLSI circuitry and does not involve any processing of a curved silicon substrate. In this approach, a third substrate would be prepared by polishing one of its surfaces to a required focal-surface curvature. A CCD membrane fabricated as described above would be pressed against, deformed into conformity with, and bonded to, the curved surface. The technique used to press and bond the CCD membrane would depend on the nature of the supporting material (see figure). For example, if the third substrate were made of quartz frit, the substrate would be prepared by suffusing it with epoxy. Then one would take advantage of the porosity of the frit by applying a partial vacuum to the opposite surface of the frit, causing atmospheric pressure to push the CCD membrane against the curved surface. The curing of the epoxy would bond the CCD membrane to the curved surface. Alternatively, if the third substrate were made of a nonporous material, the curved substrate surface would be prepared by coating it with a wax or an uncured epoxy. The CCD membrane would be pressed against the coated, curved surface by use of a suitably pressurized balloon. The CCD membrane would then become bonded to the curved surface by curing of the epoxy or freezing of the wax.

Nikzad, Shouleh↗