Electron transfer between the photoacts
Electron transfer mechanism between photoact I and II from redox reactions observation with modulated polarograph
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Electron transfer mechanism between photoact I and II from redox reactions observation with modulated polarograph
Quantum yield of photoreduction intrinsically lower in Bishop Scenedesmus mutant than in wild- type algae photosynthesis
Photoreduction of viologen dyes analyzed with chloroplasts, noting oxygen evolution and photophosphorylation efficiency, reduction potentials, etc
Photonic diagnostic technique developed for use in noninvasive, rapid evaluation of thin paraelectric/ferroelectric films. Method proves useful in basic research, on-line monitoring for quality control at any stage of fabrication, and development of novel optoelectronic systems. Used to predict imprint-prone memory cells, and to study time evolution of defects in ferroelectric memories during processing. Plays vital role in enabling high-density ferroelectric memory manufacturing. One potential application lies in use of photoresponse for nondestructive readout of polarization memory states in high-density, high-speed memory devices. In another application, extension of basic concept of method makes possible to develop specially tailored ferrocapacitor to act as programmable detector, wherein remanent polarization used to modulate photoresponse. Large arrays of such detectors useful in optoelectronic processing, computing, and communication.
An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.
An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.
The goal of this project is to understand the early evolutionary development of photosynthesis by examining the properties of reaction centers isolated from certain contemporary organisms that appear to contain the simplest photosynthetic reaction centers. The major focus of this project is the family of newly discovered strictly anaerobic photosynthetic organisms known as Heliobacteria. These organisms are the only known photosynthetic organisms that are grouped with the gram-positive phylum of bacteria. The properties of these reaction centers suggest that they might be the decendants of an ancestor that also gave rise to Photosystem 1 found in oxygen-evolving photosynthetic organisms. Photoactive reaction center-core antenna complexes have been isolated from the photosynthetic bacteria Heliobacillus mobilis and Heliobacterium gestii. The absorption and fluorescence properties of membranes and reaction centers are almost identical, suggesting that a single pigment-protein complex serves as both antenna and reaction center. Experiments in progress include sequence determination of the 48,000 Mr reaction center protein, and evolutionary comparisons with other reaction center proteins.
Photosynthetic reaction centers are pigment-protein complexes that are responsible for the transduction of light energy into chemical energy. Considerable evidence indicates that photosynthetic organisms were present very early in the evolution of life on Earth. The goal of this project is to understand the early evolutionary development of photosynthesis by examining the properties of reaction centers isolated from certain contemporary organisms that appear to contain the simplest photosynthetic reaction centers. The major focus is on the family of newly discovered strictly anaerobic photosynthetic organisms that are grouped with the gram-positive phylum of bacteria. The properties of these reactions centers suggest that they may be the descendants of an ancestor that also gave rise to Photosystem 1 found in oxygen-evolving photosynthetic organisms. Photoactive reaction center-core antenna complexes were isolated from the photosynthetic bacteria, Heliobacillus mobilis and Heliobacterium gestii, by extraction of membranes with Deriphat 160C followed by differential centrifugation and sucrose density gradient centrifugation. Other aspects of this investigation are briefly discussed.
The effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.
Four-terminal mechanically stacked solar cells were developed for advanced space arrays with line-focus reflective concentrators. The top cells are based on AlGaAs/GaAs multilayer heterostructures prepared by low temperature liquid phase epitaxy. The bottom cells are based on heteroepitaxial InP/InGaAs liquid phase epitaxy or on homo-junction GaSb, Zn-diffused structures. The sum of the highest reached efficiencies of the top and bottom cells is 29.4 percent. The best four-terminal tandems have an efficiency of 27 to 28 percent. Solar cells were irradiated with 1 MeV electrons and their performances were determined as a function of fluence up to 10(exp 16) cm(exp-2). It was shown that the radiation resistance of developed tandem cells is similar to the most radiative stable AlGaAs/GaAs cells with a thin p-GaAs photoactive layer.
An investigation of solar cells based on AlGaAs/GaAs heterostructures with an internal Bragg reflector as the back-surface reflector is presented. The Bragg reflector is grown by low pressure metalorganic chemical vapor deposition on n-GaAs substrates in a horizontal resistively heated reactor. The Bragg reflector with its maximum reflectance centered at a wavelength of 860 nm consists of 12 pairs of AlAs/GaAs layers. The resulting Bragg reflector has a thickness of 0.072 micrometers for AlAs and 0.059 micrometers for GaAs. The multi-layered quasi-dielectric stack selectively reflects weakly absorbed photons with energies near to the GaAs band gap for a second pass through the photoactive region, thus increasing the photocurrent. The use of the Bragg reflector allows the external quantum efficiency to be increased in the long wavelength of the spectrum. The use of the Bragg reflector and an antireflective coating and prismatic cover allowed an efficiency of 23.4 percent to be obtained.
Svante Arrhenius' research in atmospheric physics extended beyond the recent past and the near future states of the Earth, which today are at the center of sociopolitical attention. His plan encompassed all of the physical phenomena known at the time to relate to the formation and evolution of stars and planets. His two-volume textbook on cosmic physics is a comprehensive synopsis of the field. The inquiry into the possible cause of the ice ages and the theory of selective wavelength filter control led Arrhenius to consider the surface states of the other terrestrial planets, and of the ancient Earth before it had been modified by the emergence of life. The rapid escape of hydrogen and the equilibration with igneous rocks required that carbon in the early atmosphere prevailed mainly in oxidized form as carbon dioxide, together with other photoactive gases exerting a greenhouse effect orders of magnitude larger than in our present atmosphere. This effect, together with the ensuing chemical processes, would have set the conditions for life to evolve on our planet, seeded from spores spreading through an infinite Universe, and propelled, as Arrhenius thought, by stellar radiation pressure.
A multi-element optical detector system includes an electrically resistive screen that is substantially transparent to radiation energy having a wavelength of interest. A plurality of electron transfer elements (e.g., a low work function photoactive material or a carbon nanotube (CNT)-based element) are provided with each having a first end and a second end. The first end of each element is spaced apart from the screen by an evacuated gap. When the radiation energy passes through the screen with a bias voltage applied thereto, transfer of electrons through each element is induced from the first end to the second end such that a quantity indicative of the electrons transferred through each element can be detected.
An optical detector system includes an electrically resistive screen that is substantially transparent to radiation energy having a wavelength of interest. An electron transfer element (e.g., a low work function photoactive material or a carbon nanotube (CNT)-based element) has a first end and a second end with its first end spaced apart from the screen by an evacuated gap. When radiation energy passes through the screen with a bias voltage being applied thereto, transfer of electrons through the electron transfer element is induced from its first to its second end such that a quantity indicative of the electrons transferred can be detected.
High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.