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P-ACTIVE Project Report

The Phase change material-based actively-tunable filter (P-ACTIVE, Dr. Hyun Jung Kim, the Principal Investigator / PI) project is a NASA Langley Research Center (LaRC)-led research endeavor that began as a NASA CIF (Center Innovation Fund) project in 2019. The goal of P-ACTIVE is to develop all-solid-state tunable optical filters that can serve as low-Size, Weight, and Power (SWaP) replacements to the ubiquitous filter wheel technology current in use, and serve as a starting point for completely new optical component technologies. By using materials commonly used in electronic memory devices, namely chalcogenide phase-change materials (PCMs), in conjunction with nanostructured surfaces with exotic, tailored optical responses (“metasurfaces”), the P-ACTIVE filters are able to tune their optical transmission/reflection behavior in real-time. Because of this new functionality, P-ACTIVE filters are highlighted for NASA science and space programs such as next generation Lidar, landing system (SLS) thermal monitoring, thermal imaging, imaging spectroscopy, and disaster monitoring (e.g., volcanic eruption observations from SmallSats). This document intends to serve as a compendium of the P-ACTIVE project. We begin by describing the project from background science and assume no prior knowledge of the subject. We then address experimental and theoretical results of P-ACTIVE device performance, as well as recent results obtained from the MISSE-14 mission related to space qualification of P-ACTIVE devices and constituent materials. We conclude with a prospective view of the P-ACTIVE technology, and discuss the potential for these filters and other similar metasurface devices to serve NASA’s mission.

metamaterial↗

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A↗

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A.↗