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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Laboratory investigation of hydraulic fracturing in granitic rocks using active and passive seismic monitoring

SUMMARY Knowledge of the fracturing processes can be important for the optimization of pressurized fluid injection operations in the deep underground rock mass. Active and passive seismic monitoring techniques have been used in the field for tracking or mapping the propagating hydraulic fracture. Although both these monitoring techniques provide valuable information about the generated fracture network, it is difficult for either technique to comprehensibly identify the different processes associated with hydraulic fracturing. The combined active and passive monitoring has the potential for better characterization of the complex hydraulic fracturing phenomena. In this study, laboratory hydraulic fracturing experiments with combined active and passive seismic monitoring were conducted on true triaxially loaded Barre granite cubes with different fluid injection rates. The seismic inelastic fracturing was detected by 16 passive acoustic emission sensors, where 3678 and 2370 seismic source events were detected for the high and low injection rate experiments, respectively. For active monitoring, strong variations in the attributes of signals were observed which were transmitted through four source–receiver pairs, placed both perpendicular and parallel to the generated hydraulic fracture. Positive velocity changes were observed for active sensor pairs with ray paths passing through the generated hydraulic fracture indicating fluid permeation, whereas isolated dry deformation was characterized by a slight but permanent velocity decrease. Compared to velocity, the energy of the active signals was 1–2 orders of magnitude more sensitive to different hydraulic fracturing processes. However, the sensitivity and signatures of the active signal attributes were found to be dependent on the frequency range and direction of ray path with respect to the location of the generated fracture network. Using the coupled evaluation of the active and passive signals we were able to systematically identify various hydraulic fracturing processes including: (1) aseismic deformation, (2) fracture initiation and fluid permeation, (3) pressure build-up, (4) fracture propagation and (5) pressure release and leak-off. The results of this study showed that combining the respective advantages of active and passive seismic techniques and using both of them to monitor the failure processes can facilitate a more comprehensive understanding and better control of the hydraulic stimulations in subsurface operations.

Geochemistry & Geophysics↗
DOE OSTI2021

Potential Dependent Mn Oxidation and Its Role in Passivation of Ni 38 Fe 20 Cr 22 Mn 10 Co 10 Multi-Principal Element Alloy Using Multi-Element Resolved Atomic Emission Spectroelectrochemistry

The identity of passivating oxides on multi-principal element alloys is of great interest as their optimization offers the potential for exceptional corrosion resistance in aqueous solutions over a broad range of potential and pH. This study focuses on a non-equiatomic Ni 38 Fe 20 Cr 22 Mn 10 Co 10 solid solution alloy and tracks the fate of each alloying element during linear sweep voltammetry, low and intermediate potential holds in the passive potential domain as well as during open circuit relaxation after anodic polarization in slightly acidified Cl − solution. Ni dissolves at all potentials investigated in this work, Fe and Co are incorporated into oxides or hydroxides in low concentrations whilst Cr and Mn are enriched at passive potentials. At low passivating potentials, Mn(II) dissolves and is incorporated in minor amounts in oxides containing large concentrations of Cr(III). Considerable enrichment in Mn(II)-species occurs relative to Cr(III) in the oxide at 0.1 V vs SCE. Electrochemical impedance spectroscopy suggests the presence of layered oxides with marginal passivation at high Mn(II) levels. The formation of these oxides depends on a combination of thermodynamic and kinetic factors as well as the sequence of passivation.

Han, Junsoo (ORCID:0000000192952954)↗
DOE OSTI2023

Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.

14 SOLAR ENERGY↗
DOE OSTI2021

Reducing Surface Recombination Velocity of Methylammonium-Free Mixed-Cation Mixed-Halide Perovskites via Surface Passivation

We control surface recombination in the mixed-cation, mixed-halide perovskite, FA0.83Cs0.17Pb(I0.85Br0.15)3, by passivating nonradiative defects with the polymerizable Lewis base (3-aminopropyl)trimethoxysilane (APTMS). We demonstrate average minority carrier lifetimes >4 µs, nearly single exponential monomolecular photoluminescence decays, and high external photoluminescence quantum efficiencies (>20%, corresponding to ~97% of the maximum theoretical quasi-Fermi-level splitting) at low excitation fluence. We confirm both the composition and valence band edge position of the FA0.83Cs0.17Pb(I0.85Br0.15)3 perovskite using multi-institutional, cross-validated, X-ray photoelectron spectroscopy and UV photoelectron spectroscopy measurements. We extend the APTMS surface passivation to higher bandgap double-cation (FA and Cs) compositions (1.7, 1.75, and 1.8 eV) as well as the widely used triple-cation (FA, MA, and Cs) composition. Finally, we demonstrate that the average surface recombination velocity decreases from ~1000 to ~10 cm/s post APTMS passivation for FA0.83Cs0.17Pb(I0.85Br0.15)3. Our results demonstrate that surface-mediated recombination is the primary nonradiative loss pathway in many methylammonium (MA)-free mixed-cation mixed-halide films with a range of different bandgaps, which is a problem observed for a wide range of perovskite active layers and reactive electrical contacts. Our study also provides insights to develop passivating molecules that help reduce surface recombination in MA-free mixed-cation mixed-halide films and indicates that surface passivation and contact engineering will enable near-theoretical device efficiencies with these materials.

14 SOLAR ENERGY↗
DOE OSTI2023

Understanding Hydrogen Passivation Mechanism in Poly-Si Passivating Contacts: Insights from Effusion Studies

Silicon PV is the dominant PV technology, and captures >95% world market share, supporting -100 GW/year. Diffused and passivated pn junctions along with other rear side passivation technologies are the mainstream technologies and will continue to remain so in the coming decades. Passivated contacts, using tunnel oxide passivation stacks at the rear side, will gain market share from about 10% in 2022 up to 58% within the next 10 years. Most mature approaches use passivating layers of hydrogenated Al2O3 and SiNx. LPCVD SiNx provides less hydrogen for passivation compared to PECVD SiNx but can retain the hydrogen up to higher temperatures which is beneficial for firing. Although SiNx provides large amount of hydrogen, this doesn't necessarily translate to good passivation. AlOx:H contributes to retaining H at higher temperatures. Water molecules are also detected during H-effusion and may play a role in passivation of the oxide/wafer interface.

effusion study↗
DOE OSTI2021

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Despite the high efficiencies reached by heavily doped poly-Si/SiO x passivating contact solar cells, challenges like the high front parasitic absorption still limit their performance. Previously, we showed a wet etching technique using self-aligned metal grids to remove the front poly-Si in the non-metallized region. Here, we focus on the effective dielectric passivation on this tunneling oxide/n + in-diffused region. The effect of poly-Si thickness was studied to balance between the passivation quality and the current gain. We then compared various dielectric passivation schemes using SiN x , Al 2 O 3 , and stacks thereof via injection-level dependent lifetime and the transfer length method. We demonstrate a SiN x /Al 2 O 3 stack yielded the best passivation performance within device process limitation and obtained an improved front/back poly-Si/SiO x passivating contact device, with a short circuit current density of 41.8 mA/cm 2 and an efficiency of 21.8%.

anisotropic wet etching↗
DOE OSTI2023

Self Assembled Monolayers for Passivated Contacts

Passivated contacts mitigate defects typically encountered due metallization of solar cells. We deposit amorphous silicon (a-Si:H) on an oxidized silicon wafer via PECVD and anneal at high temperature to crystallize into polysilicon passivated contact. One drawback is the absorption of the polysilicon between grid fingers, so removal of this material is desirable to maximize Jsc. Alternatively, interdigitated back contact cells rely on a gap between n- and p- fingers, which is commonly etched to ensure electronic isolation. We utilize a self assembled monolayer (SAM) using hexamethyldisilazane (HMDS) as a precursor to pattern and etch amorphous silicon (a-Si:H) and polysilicon without the need for photoresist. Ultraviolet light exposure oxidizes the HMDS by photocleaving the organic groups [1] of the SAM leaving a patterned SiO2. Directly soaking this in TMAH will eventually etch the SAM and the silicon, where the SiO2 serves as an etch mask. Inversely, a dilute HF dip selectively etches this SiO2 and the SAM remains. A subsequent soak in TMAH selectively etches the underlying silicon, where the SAM serves as an etch mask. Importantly, we find that the SAM can remain intact for metallization, where we measure 10 mO-cm2 specific contact resistivity on n-type polysilicon.

passivation↗
DOE OSTI2020

Spent fuel nondestructive assay integrated characterization from active neutron, passive neutron, and passive gamma

Spent nuclear fuel comprises a wide range of irradiated isotopic material compositions, and characterization through nondestructive measurements is beneficial in verifying declared parameters before the fuel is placed in storage, final disposal, and/or reprocessed. This paper discusses results from three nondestructive assay instruments, including passive gamma, passive neutron, and active neutron methods, that measured fifty spent fuel assemblies at the Clab interim storage facility in Sweden. Here, integrated analysis of the measurements from the three different instruments allowed parametric assessments of cooling time, burnup, neutron multiplication, fissile mass, initial enrichment, and decay heat of each individual fuel assembly. Passive gamma measurements were found to be the most beneficial in predicting cooling time, passive neutron for determining burnup, active neutron in estimating initial enrichment, and both passive and total neutron for multiplication correlations. Fissile mass was best estimated using any combination of any two of the instruments such that corrections for isotopic changes in the fuel could be accounted for with the first set of measurements and multiplication of the assembly in the second. In conclusion, the nondestructive assay technologies demonstrated through this effort enhance the characterization of spent nuclear fuel assemblies.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Degradation and Accelerated Recovery of Surface Passivation in n+, p+, and Intrinsic Poly-Si/SiOx Passivating Contacts for Silicon Solar Cells

We report on the degradation and recovery of surface passivation of fired poly-Si/SiOx passivating contacts with hydrogen containing Al2O3 during annealing in the dark and under illumination. Upon firing to a peak temperature of 670 degrees C, the iVoc for symmetric test structures with n+, p+, and intrinsic poly-Si/SiOx contacts decreases due to a loss of surface passivation. Upon further annealing over the temperature range of 200-350 degrees C in the dark, depending on the type of doping, the surface passivation either shows further degradation followed by recovery, or direct recovery to the initial iVoc. Annealing at higher temperatures and/or higher illumination intensities accelerates the kinetics for both degradation and recovery processes. We show that the degradation and recovery processes are thermally activated and proceed identically in subsequent firing and annealing steps showing their cyclic nature. We present a series reaction model to explain the kinetics of degradation and recovery processes for n+ and intrinsic poly-Si/SiOx contacts. By fitting the model's rate expressions to the data, the determined effective activation energy barriers for degradation and recovery for n+ poly-Si/SiOx contacts in the dark are 1.24 and 1.51 eV, which are lowered under 7.5 Suns illumination to 0.76 and 1.15 eV, respectively.

14 SOLAR ENERGY↗
DOE OSTI2023

Universal Passive Synchronization Method for Grid-Forming Inverters Without Mode Transition

Power systems are transforming with increasing levels of inverter-based resources (IBRs). This transformation requires critical roles of grid-forming (GFM) inverters replacing synchronous generators for bulk power system stabilization and ancillary services, also allowing flexible power system operation, such as microgrid that is operated by multiple GFM IBRs to achieve system resilience against contingencies. To realize the resilient power systems allowing flexible in-and-out operation of GFM IBRs potentially programmed with different primary controls, a synchronization method universally applicable, i.e., independent of control types, would be beneficial to ease the integration process, but it has not been actively studied. To fill the gap, this paper proposes a universal synchronization method that achieves a passive synchronization to enable a smooth transition in a grid with off-nominal system parameters, i.e., voltage and frequency. The logic proposed requires no modification on the primary control, thus applicable to any type of GFMs with a voltage reference input. To validate the concept, a simulation of an IEEE 13-bus benchmark system modified with 3 GFM inverters is presented. It simulates an inverter-driven black start scenario in which GFM inverters autonomously turn on and connect to the grid under heavy loading, using the synchronization logic. The case study demonstrates that GFM inverters can tune their voltage reference to smoothly synchronize without severe transients, and contribute to a seamless black start of the grid under unbalanced load conditions. Two GFM methods - Droop and dispatchable virtual oscillator control - are used for the demo to validate feasibility and interoperability of the passive synchronization.

black start↗
DOE OSTI2020

Passive Digital Sensing Method and Its Implementation on Passive RFID Temperature Sensors

Benefitting from the advancement of digital electronics in the 20 th century, sensors have also gradually evolved from analog to digital. As semiconductor components are required in digital sensors, a power supply is still needed for the sensor. To eliminate the need for a power supply a concept of passive digital sensing is proposed. Different from the semiconductor-based electrical digital sensing method, the parameter to be measured is first converted to a mechanical signal, then the mechanical signal is encoded to multiple digital bits by a passive digitizer, where each bit is identified as open or short state that is detectable by general IO ports. To demonstrate the proposed sensing concept, a passive RFID temperature sensor is implemented using a bimetallic coil as the temperature sensing unit. The 6-bit binary codes are acquired and transmitted by a passive RFID that is powered by an energy harvester. Furthermore, the test results show that the temperature sensor has a measurement sensitivity of 1.32 °C/bit and a working distance over 10 meters.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Aqueous passivation of multi-principal element alloy Ni 38 Fe 20 Cr 22 Mn 10 Co 10 : Unexpected high Cr enrichment within the passive film

The aqueous passivation of a non-equiatomic Ni 38 Fe 20 Cr 22 Mn 10 Co 10 - at.% (Ni 40 Fe 20 Cr 20 Mn 10 Co 10 - wt.%) multi-principal element alloy (MPEA) was investigated in 0.1 M NaCl at pH 4 and compared to a conventional binary Ni 76 Cr 24 – at.% (Ni 78 Cr 22 – wt.%) alloy. The electrochemical behavior and oxide film characteristics were explored utilizing in-situ electrochemical and ex-situ surface-sensitive techniques. The passive film composition, thickness, and elemental valence states, as well as, the fate of each element were studied by in-situ atomic emission spectro-electrochemistry, ex-situ X-ray photoelectron spectroscopy, and atom probe tomography. The Ni 38 Fe 20 Cr 22 Mn 10 Co 10 MPEA demonstrated slightly better corrosion resistance compared to the binary Ni 76 Cr 24 , alloy. Passive films on the MPEA contained primarily Cr, and small amounts of Ni, Fe, Co and Mn, while dissolution of Ni, Fe, Co was observed. Ni 0 was enriched at the oxide/metal interface while Cr was depleted. Enrichment of Cr in the passive film occurred to a greater extent in the MPEA than for the Ni-Cr binary alloy. As a result, enrichment factors were determined and the origins of enrichment are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultra-thin passivation layers in Cu(In,Ga)Se 2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping

In the search for highly transparent and non-toxic alternative front layers replacing state-of-the-art CdS in Cu(In,Ga)Se 2 thin-film solar cells, alternatives rarely exceed reference devices in terms of efficiency. Full-area ultra-thin aluminium oxide tunnelling layers do not require any contact patterning and thus overcome the main drawback of insulating passivation layers. Even a few monolayers of aluminium oxide can be deposited in a controlled manner by atomic layer deposition, they show excellent interface passivation properties, low absorption, and suitable current transport characteristics on test devices. Depositing a ZnO-based transparent front contact, however, results in extremely poor solar cell performance. The issue is not necessarily a low quality of the alternative front layer, but rather the intricate relation between front layer processing and electronic bulk properties in the absorber layer. We identify three challenges critical for the development of novel front passivation approaches:(i) both Cd and Zn impurities beneficially reduce the high native net dopant concentration in the space charge region, (ii) sputter deposition of ZnO damages the passivation layer resulting in increased interface recombination, (iii) thermal treatments of devices with ZnO layer result in substantial Zn diffusion, which can penetrate the full absorber thickness already at moderate temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Spectral shaping of an ultrafast ytterbium fiber laser via a passive intracavity optical filter: a simple and reliable route to sub-45 fs pulses

We investigate the use of passive intracavity optical filters for controlling the laser output spectrum of a polarization-mode-locked, ultrafast ytterbium fiber laser. The overall lasing bandwidth is increased or extended by strategic choice of the filter cutoff frequency. Overall laser performance, including pulse compression and intensity noise, is investigated for both shortpass and longpass filters with a range of cutoff frequencies. The intracavity filter not only shapes the output spectra, but also provides a route for overall broader bandwidths and shorter pulses in ytterbium fiber lasers. These results demonstrate that spectral shaping with a passive filter is a useful tool to routinely achieve sub-45 fs pulse durations in ytterbium fiber lasers.

Cooper, Nicholas D.↗
DOE OSTI2023

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗