SEARCH · Engineering Papers
Results for “oxide films”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Electrochemical generation of oxygen. 1: The effects of anions and cations on hydrogen chemisorption and anodic oxide film formation on platinum electrode. 2: The effects of anions and cations on oxygen generation on platinum electrode
The effects were studied of anions and cations on hydrogen chemisorption and anodic oxide film formation on Pt by linear sweep voltammetry, and on oxygen generation on Pt by potentiostatic overpotential measurement. The hydrogen chemisorption and anodic oxide film formation regions are greatly influenced by anion adsorption. In acids, the strongly bound hydrogen occurs at more cathodic potential when chloride and sulfate are present. Sulfate affects the initial phase of oxide film formation by produced fine structure while chloride retards the oxide-film formation. In alkaline solutions, both strongly and weakly bound hydrogen are influenced by iodide, cyanide, and barium and calcium cations. These ions also influence the oxide film formation. Factors considered to explain these effects are discussed. The Tafel slope for oxygen generation was found to be independent on the oxide thickness and the presence of cations or anions. The catalytic activity indicated by the exchange current density was observed decreasing with increasing oxide layer thickness, only a minor dependence on the addition of certain cations and anions was found.
ELECTRON GUN FOR EVAPORATION OF OXIDE FILM
Electron guns for evaporation of refractory oxide film
Oxide film on metal substrate reduced to form metal-oxide-metal layer structure
Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.
Silicon oxide films grown in microwave discharge
Silicon oxide films thicker than 1000 angstrom are produced in the dense plasma of a microwave discharge. The oxide growth is characterized by a rate limiting diffusion process modified by sputtering effects produced by the discharge. Silicon is rapidly oxidized at temperatures estimated to be 500 degrees C or lower.
Silicon oxide films grown in a microwave discharge.
Silicon oxide film growth behavior in microwave discharge noting limiting oxide thickness obtainable at infinite time free of mobile ions
Microwave discharge deposition of oxide films at low temperatures.
Microwave discharge technique for depositing noncrystalline oxide films of silicon, germanium, boron, titanium and selenium on substrates by decomposing compounds by oxygen plasma
Research into the feasibility of thin metal and oxide film capacitors
Feasibility of thin metal and oxide film capacitors
Solar absorptivity and thermal emissivity of aluminum coated with silicon oxide films prepared by evaporation of silicon monoxide
Silicon oxide films coated satellite aluminum surfaces solar absorptivity and thermal emissivity, noting suitability as temperature control coatings
Effect of ultraviolet irradiation on the optical properties of silicon oxide films.
UV irradiation effect on optical properties, thickness and chemical composition of silicon oxide films
Ellipsometric study of oxide films formed on LDEF metal samples
The optical constants of samples of six different metals (Al, Cu, Ni, Ta, W, and Zr) exposed to space on the Long Duration Exposure Facility (LDEF) were studied by variable angle spectroscopic ellipsometry. Measurements were also carried out on portions of each sample which were shielded from direct exposure by a metal bar. A least-squares fit of the data using an effective medium approximation was then carried out, with thickness and composition of surface films formed on the metal substrates as variable parameters. The analysis revealed that exposed portions of the Cu, Ni, Ta, and Zr samples are covered with porous oxide films ranging in thickness from 500 to 1000 A. The 410 A thick film of Al2O3 on the exposed Al sample is practically free of voids. Except for Cu, the shielded portions of these metals are covered by thin non-porous oxide films characteristic of exposure to air. The shielded part of the Cu sample has a much thicker porous coating of Cu2O. The tungsten data could not be analyzed.
Space charge in growing oxide films. V - Perturbation coefficients and second-order treatment.
Coefficients of space charge effects for growing oxide films, derived from perturbation treatment, evaluated in terms of boundary concentrations of diffusing species
Research into the feasibility of thin metal and oxide film capacitors Interim scientific report
Feasibility of thin metal and oxide film capacitors
Method to prepare oxide films
This invention pertains to a method for producing metal oxide films characterized by the fact that the metal elements constituting the main metal alloys contain at least one kind of transition element, and that the metal elements which constitute said metal alloy are thin films of barium and titanium in almost the same mol ratio.
The formation of vacancies in the case of diffusion of metal atoms through a surface oxide film and the effect of the medium of dislocation structure
Vacancy formation from diffusion of metal atoms through surface oxide film and medium effect on dislocation structure
Research into the feasibility of thin metal and oxide-film capacitors Final technical report
Feasibility of producing thin metal and oxide- film capacitors with stable electrical properties in high temperature environments
Studies on electrochemical formation and reduction of oxide films on noble and transition metals Semiannual report
Potentiometric measurements of oxide film formation and reduction mechanisms on platinum
Kinetics of oxide film growth on metal crystals - Thermal electron emission and ionic diffusion.
Thermal oxidation kinetics of oxide film growth on metal crystals, considering ion diffusion and thermionic electron emission