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At least 19 records

GaAIAs Traveling-Wave Electro-optical Modulators

Microwave signals modulate optical signals in unit integrable with GaAs and GaAIAs devices. Experimental GaAIAs electro-optical modulators designed and built for operation at wavelength of 0.82 micrometers. Easily integrable with GaAs monolithic microwave integrated circuits. Integrated optical and microwave waveguides in electro-optical materials constitute traveling-wave electro-optical modulator in configuration of Mach-Zehnder interferometer. Because characteristic impedance of waveguide 50 ohms - standard value - no impedance-matching network required.

Bhasin, Kul B.↗

Efficient Trainability of Linear Optical Modules in Quantum Optical Neural Networks

The existence of “barren plateau landscapes” for generic discrete-variable quantum neural networks, which obstructs efficient gradient-based optimization of cost functions defined by global measurements, would be surprising in the case of generic linear optical modules in quantum optical neural networks due to the tunability of the intensity of continuous variable states and the relevant unitary group having exponentially smaller dimension. We demonstrate that coherent light in m modes can be generically compiled efficiently if the total intensity scales sublinearly with m, and extend this result to cost functions based on homodyne, heterodyne, or photon detection measurement statistics, and to noisy cost functions in the presence of attenuation. Here, we further demonstrate efficient trainability of m mode linear optical quantum circuits for variational mean field energy estimation of positive quadratic Hamiltonians for input states that do not have energy exponentially vanishing with m.

47 OTHER INSTRUMENTATION↗

Investigation of direct integrated optics modulators

Direct optical modulation techniques applicable to integrated optical data preprocessors were studied. Emphasis was placed on the analysis and fabrication of a field effect type modulator. A series of computer modeling studies were performed to determine the effects of semiconductor cladding on the fields of propagating waves in planar dielectric waveguides. These studies predicted that changes in the propagation characteristics of waveguides clad with silicon and gallium arsenide could be made large enough to be useful in modulators. These effects are dependent on the complex permittivity and thickness of the cladding. Since the conductivity of the cladding can be changed by the photon generation of hole-electron pairs, incoherent light may be used as the input to modulate a coherent light beam. Waveguides were fabricated and silicon claddings were applied to verify the theoretical predictions.

Batchman, T. E.↗

High-speed silicon microresonator modulators with high optical modulation amplitude (OMA) at input powers >10 mW

A high-speed silicon photonic microdisc modulator is used with more than 10 mW optical power in the bus waveguide, extending the optical power handling regime used with compact silicon resonant modulators at 1550 nm. We present an experimental study of the wavelength tuning range and biasing path required to shift the resonant frequency to the optimal point versus on chip power. We measure the optical modulation amplitude (OMA) along different biasing trajectories of the microdisc under active modulation and demonstrate an OMA of 4.1 mW with 13.5 mW optical power in the bus waveguide at 20 Gbit/s non-return to zero (NRZ) data modulation.

Wang, Xiaoxi↗

Heterogeneously integrated electro-optic modulator

In an electro-optical modulator, an electro-optical modulation layer is bonded to a cladding layer that overlies a substrate. A modulation zone waveguide is optically coupled to the electro-optical modulation layer and optically coupled to an I/O waveguiding structure embedded in the cladding layer. The I/O waveguiding structure is conformed to guide input light toward the modulation zone waveguide and to guide output light away from the modulation zone waveguide.

36 MATERIALS SCIENCE↗

Methods of epsilon-near-zero optical modulation

A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.

Wood, Michael↗

Development of a stable electro-optical modulator

The activity of the sun can be studied through the measurement of its magnetic field. The measurement of the polarization state of the sunlight in a narrow spectral bandwidth can be related to the magnetic fields strengths and directions over the active sunspots. Measuring the polarization state can be done using the vector magnetograph. The essential component of the vector magnetograph is the polarization modulators. Electro-optical modulators are used as dynamic retarders. KDP (potassium dideuterium phosphate) crystals provide variable retardation which can be controlled by the applied voltage. KDP's have a high contrast ratio but suffer some problems; they require a high voltage and have a limited modulation lifetime. The KDP modulator forms the heart of the polarimeter assembly which is used for carrying out accurate measurements of linear polarization of the sun. It is therefore important to study the optical and electrical behavior of the KDP crystals so that the ultimate goal of making stable electro-optical modulators in the laboratory is achieved. A number of activities were performed in coating and testing the KDP crystals. A summary of these activities is given.

Abushagur, Mustafa A. G.↗

Acousto-optic modulators for fibre-optic lines

The specific features of efficient matching of acousto-optic devices with single-mode fibres for the cases of isotropic and anisotropic diffraction are considered. The acousto-optic interaction geometry, optimal for modulating an arbitrarily polarised light beam with a possibility of tuning its frequency shift in the range up to ∼10 MHz, is chosen. Acousto-optic modulators/frequency shifters based on paratellurite (TeO{sub 2}), pigtailed with polarisation-maintaining and non-polarisation-maintaining fibres, have been developed for wavelengths of 1064 and 1550 nm, and their main technical parameters are investigated. (paper)

36 MATERIALS SCIENCE↗

Ultra-Wideband Optical Modulation Spectrometer (OMS) Development

The optical modulation spectrometer (OMS) is a novel, highly efficient, low mass backend for heterodyne receiver systems. Current and future heterodyne receiver systems operating at frequencies up to a few THz require broadband spectrometer backends to achieve spectral resolutions of R approximately 10(exp 5) to 10(exp 6) to carry out many important astronomical investigations. Among these are observations of broad emission and absorption lines from extra-galactic objects at high redshifts, spectral line surveys, and observations of planetary atmospheres. Many of these lines are pressure or velocity broadened with either large half-widths or line wings extending over several GHz. Current backend systems can cover the needed bandwidth only by combining the output of several spectrometers, each with typically up to 1 GHz bandwidth, or by combining several frequency-shifted spectra taken with a single spectrometer. An ultra-wideband optical modulation spectrometer with 10 - 40 GHz bandwidth will enable broadband ob- servations without the limitations and disadvantages of hybrid spectrometers. Spectrometers like the OMS will be important for both ground-based observatories and future space missions like the Single Aperture Far-Infrared Telescope (SAFIR) which might carry IR/submm array heterodyne receiver systems requiring a spectrometer for each array pixel. Small size, low mass and small power consumption are extremely important for space missions. This report summarizes the specifications developed for the OMS and lists already identified commercial parts. The report starts with a review of the principle of operation, then describes the most important components and their specifications which were derived from theory, and finishes with a conclusion and outlook.

Gardner, Jonathan↗

Polarization Independent Electro-Optic Modulator

A polarization insensitive electro-optic modulator is constructed by providing a polarization beamsplitter to separate an incoming light beam into two orthogonally plane polarized beams. Each of the polarized beams passes through a separate electro-optic modulator where each beam is modulated by the same data signal. After modulation the beams are combined to yield a modulated beam having modulated components that are orthogonally polarized. Not only is this device insensitive to changes in polarization of the input beam, the final modulated beam can be detected by optical receivers without regard to polarization alignment of the modulated beam and the receiver.

Yao, Xiao-Tian Steve↗

Wideband, high efficiency optical modulator requires less than 10 watts drive power

Wideband optical modulation system operates with less than 10-watts drive power. It consists of an optical modulator and transistorized driver that combines small cross-section potassium dideuterium phosphate crystals with laser beam-condensing optics. Optical modulation systems may serve importantly in future space wideband communication systems.

Becknell, W. E.↗

Diffuse Infrared Background Experiment (DIRBE) optics module breadboard alignment methods and results

The Diffuse Infrared Background Experiment (DIRBE) optics module will be assembled at ambient temperature but will operate at liquid helium temperature. The challenging task of ensuring that is possible to maintain alignment through cryogenic cooling and cryogenic vibration has been demonstrated in a DIRBE optics module breadboard program. This paper discusses the configuration of the DIRBE optics module breadboard, ambient temperature optical alignment methods used to assemble the breadboard, and cryogenic testing of the breadboard. The alignment of the optical assembly at ambient temperature, at 77 K, and after a 77 K vibration was within specification.

Magner, Thomas J.↗

D-Egg: a dual PMT optical module for IceCube

The D-Egg, an acronym for "Dual optical sensors in an Ellipsoid Glass for Gen2," is one of the optical modules designed for future extensions of the IceCube experiment at the South Pole. The D-Egg has an elongated-sphere shape to maximize the photon-sensitive effective area while maintaining a narrow diameter to reduce the cost and the time needed for drilling of the deployment holes in the glacial ice for the optical modules at depths up to 2700 m. The D-Egg design is utilized for the IceCube Upgrade, the next stage of the IceCube project also known as IceCube-Gen2 Phase 1, where nearly half of the optical sensors to be deployed are D-Eggs. With two 8-inch high-quantum efficiency photomultiplier tubes (PMTs) per module, D-Eggs offer an increased effective area while retaining the successful design of the IceCube digital optical module (DOM). The convolution of the wavelength-dependent effective area and the Cherenkov emission spectrum provides an effective photodetection sensitivity that is 2.8 times larger than that of IceCube DOMs. The signal of each of the two PMTs is digitized using ultra-low-power 14-bit analog-to-digital converters with a sampling frequency of 240 MSPS, enabling a flexible event triggering, as well as seamless and lossless event recording of single-photon signals to multi-photons exceeding 200 photoelectrons within 10 ns. Mass production of D-Eggs has been completed, with 277 out of the 310 D-Eggs produced to be used in the IceCube Upgrade. In this paper, we report the design of the D-Eggs, as well as the sensitivity and the single to multi-photon detection performance of mass-produced D-Eggs measured in a laboratory using the built-in data acquisition system in each D-Egg optical sensor module.

47 OTHER INSTRUMENTATION↗

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗