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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗
NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗
NASA NTRS1983

Ohmic contacts for laser diodes

Requirements for ohmic contacts to laser diodes are discussed, and properties of Schottky barrier tunneling contacts are reviewed. A procedure is described for measuring contact resistance on fabricated laser material without the need for specially constructed samples and contact configurations. Measurements of contact resistance and estimates of specific contact resistance are given for Ti/Pt/Au contacts to surfaces with three different doping levels. It was found that below a p-type carrier concentration of 1 x 10 to the 19th per cu cm the contact resistance is likely to be too high for good device performance. At higher doping levels, a specific contact resistance as low as 2 x 10 to the -6th ohm sq cm was obtained. Oxide stripe lasers provided with the type of contact discussed in this paper have been operated without failures for periods up to 7 years at a current density at the contact of 6-8 kA/sq cm. It appears therefore that these contacts satisfy the need for low resistance and durability and that, at the same time, they do not cause any obvious material degradation.

Ladany, I.↗
NASA NTRS1987

New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

Lieneweg, Udo↗
NASA NTRS1966

Multilayer ohmic contacts on CdS.

Multilayer technique for evaporation of ohmic contacts onto CdS, noting V-I characteristics and noise spectrum of recrystallized layer

VOLT-AMPERE CHARACTERISTICS↗
NASA NTRS1988

Aging behavior of Au-based ohmic contacts to GaAs

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Fatemi, Navid S.↗
NASA NTRS1989

Aging behavior of Au-based ohmic contacts to GaAs

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Fatemi, Navid S.↗
NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗
NASA NTRS1995

High-temperature ohmic contact to n-type 6H-SiC using nickel

Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 C and yielded values less than 5 x 10(exp -6) ohm sq cm at both temperatures. The trend shows a decreasing contact resistance at higher temperature. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.

Crofton, J.↗
NASA NTRS1995

Better Ohmic Contacts For InP Semiconductor Devices

Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

Weizer, Victor G.↗
NASA NTRS1986

Effect of counterions on the formation of ohmic contact between p-Si and poly(pyrrole) film - An ac impedance analysis

Conditions under which poly(pyrrole) (PP) films form ohmic contact with single-crystal p-Si are described. Counterions affect both the conductivity and flatband potential, V(FB), values of poly(pyrrole). While paratoluene-sulfonate-doped PP acts like a switch, the impedance behavior of PP films doped with ClO4(-), BF4(-), or PF6(-) allows evaluation of the V(FB) of these films. The formation of 'quasi-ohmic' and 'nonohmic' contacts, respectively, of PP (ClO4) and PP films doped with other counterions, with p-Si, are explained in terms of conductivity of these films and V(FB) of PP films with respect to that of p-Si. PP film seems to passivate or block intrinsic surface states present on p-Si surface.

Nagsubramanian, G.↗
NASA NTRS1980

Ohmic contact for P type indium phosphide

A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.

Hawrylo, Frank Z.↗
NASA NTRS1977

Semiconductor ohmic contact

A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

Hawrylo, Frank Zygmunt↗
NASA NTRS1980

Ohmic contact to GaAs semiconductor

Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.

Hovel, H. J.↗
NASA NTRS1992

Effects of ultra-vacuum and space environment on contact ohmic resistance: LDEF experiment AO 138-11

The FRECOPA experimentation of chemical resistance of electrical connector contacts, as described, has evidenced the detrimental time variations of nickel plated conductors and gilded copper contacts, irrespective of crimping storage or metal peening conditions. With a view to reorient aluminum technology a silvered aluminum conductor/gilded aluminum contact solution was evaluated.

Assie, Jean-Pierre↗