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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications

High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and higher losses. For STO/LAO multilayer structures having STO film of similar quality we have observed that interdigital capacitor configurations allow for higher tunabilities and lower losses than parallel plate configurations, but required higher dc voltage. Results on the use of these geometries in working microwave components such as filters and stabilizing resonators for local oscillators (LO) will be discussed.

Miranda, Felix A.↗
NASA NTRS2003

Collaboration of the NASA Glenn Research Center and Rolls-Royce Developed Thin Film Multilayered Dielectrics for Harsh Environments

The use of thin films to electrically insulate thin film sensors on engine components minimizes the intrusiveness of the sensors and allows a more accurate measurement of the environment. A variety of insulating films were investigated for preventing electrical shorting caused by insulator failure between the sensor and the component. By alternating layers of sputtered high-temperature ceramics, a sequence of insulating layers was devised that (1) prevents pinholes from forming completely through the insulator and (2) maintains high electrical resistivity at high temperatures. The total thickness is only a fraction of that needed for conventional insulating techniques. The Sensors and Electronics Technology Branch of the NASA Glenn Research Center has an in-house effort to develop thin film sensors for surface measurement in propulsion system research. Thin film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner (less than 10 mm thick) than wire or foil sensors. The thin film sensors are thus much less disturbing to the operating environment and have a minimal impact on the physical characteristics of the supporting component. To further this research, NASA Glenn and Rolls-Royce (Derby, UK), with assistance from the Ohio Aerospace Institute (OAI) and the Akima Corporation, pursued a joint investigation using multilayered thin film dielectrics as a reliable insulator in harsh environments. The use of a multilayered scheme is thought to be promising for the fabrication of electrically insulating thin films. A major cause of conduction in thin film dielectrics is the presence of defects, such as pinholes, that propagate through the film to the underlying substrate surface. By alternating the insulating material, each new growth pattern would deviate from the previous one, eliminating direct pathways for conduction to the substrate. The film depositions and testing were conducted in the Instrument Research Laboratory at Glenn. The multilayered insulator test samples were made from alumina and stainless steel shims that were first covered with a sputtered underlayer of either yttria-stabilized zirconia or chromium carbide, and then overcoated with a sputtered top layer of alumina. An example of a test sample is shown in the following photograph. Each multilayered insulator sample was 5 mm thick, at least an order of magnitude thinner than conventional insulators. The insulating properties of the samples were tested in a high-temperature air oven to determine their suitability. The multilayer insulators tested showed a stabilized film at temperatures in excess of 800 C (1472 F). The underlying materials in these multilayers allow thermal expansion stresses produced during the heating to be graded. The chromium carbide-alumina multilayer had the best adhesion at high temperatures, presumably from the induced chemical bonding between the substrate and the chromium carbide underlayer. However, the zirconia-alumina multilayer proved to have slightly better insulating properties when adhering. The application of the zirconia-alumina insulator has been demonstrated on a nickel-alloy fan blade, as shown. The insulators using thin film sensors still need to be tested in a relevant high-temperature combustion environment.

Wrbanek, John D.↗
NASA NTRS2018

Preparation of Thick NI/AL Reactive Multilayer Films and Prospective Use for Self-Powered Brazing of TI-6AL-4V

In this study we demonstrate a new method for depositing thick reactive multilayer films (RMFs) (thickness > 14 µm) by using Ti interlayer integration and substrate preheating during fabrication. These two adjustments are designed to alleviate internal planar stresses that cause delamination between deposited layers and peeling off the substrate. Decreasing the distance between Ti interlayers helps to eliminate delamination between deposited layers. Through high speed camera measurements, the reaction propagation speed of an RMF sample with preheating is 42% slower than the same RMF that was not preheated, indicating a slower heat release rate. The preliminary experiments on brazing Ti-6Al-4V coated with BAlSi-4 brazing material revealed dendritic structure branching out from the RMF surface into the brazing material. The dendrite structures most likely form because of rapid melting and solidification of the brazing material. However, this rapid melting and solidification cycle does not appear to occur uniformly across the BAlSi-4RMF interface which is linked to its low bonding strength. When the Ti-6Al-4V substrate is heated to 150 °C prior to ignition, the strength increases to 0.47 MPa when the total RMF thickness is 84 µm and 15 MPa of pressure is applied.

Cheng, Jinquan↗
NASA NTRS1974

Design guidelines for advanced LSI microcircuit packaging using thick film multilayer technology

Ceramic multilayer circuitry results from the sequential build-up of two or more layers of pre-determined conductive interconnections separated by dielectric layers and fired at an elevated temperature to form a solidly fused structure. The resultant ceramic interconnect matrix is used as a base to mount active and passive devices and provide the necessary electrical interconnection to accomplish the desired electrical circuit. Many methods are known for developing multilevel conductor mechanisms such as multilayer printed circuits, welded wire matrices, flexible copper tape conductors, and thin and thick-film ceramic multilayers. Each method can be considered as a specialized field with each possessing its own particular set of benefits and problems. This design guide restricts itself to the art of design, fabrication and assembly of ceramic multilayer circuitry and the reliability of the end product.

Peckinpaugh, C. J.↗
NASA NTRS2000

Multilayer Film Assembly of Carbon Nanotubes

An approach to assemble multilayers of carbon nanotubes on a substrate is presented. Chemical vapor deposition using a transition metal catalyst formulation is used to grow the nanotubes. Results show a bilayer assembly of nanotubes each with a different density of tubes.

Cassell, Alan M.↗
NASA NTRS2006

Developing Multilayer Thin Film Strain Sensors With High Thermal Stability

A multilayer thin film strain sensor for large temperature range use is under development using a reactively-sputtered process. The sensor is capable of being fabricated in fine line widths utilizing the sacrificial-layer lift-off process that is used for micro-fabricated noble-metal sensors. Tantalum nitride films were optimized using reactive sputtering with an unbalanced magnetron source. A first approximation model of multilayer resistance and temperature coefficient of resistance was used to set the film thicknesses in the multilayer film sensor. Two multifunctional sensors were fabricated using multilayered films of tantalum nitride and palladium chromium, and tested for low temperature resistivity, TCR and strain response. The low temperature coefficient of resistance of the films will result in improved stability in thin film sensors for low to high temperature use.

Wrbanek, John D.↗
NASA NTRS1966

Fabrication of multilayer dielectric films.

Evaporation system for fabrication of multilayer dielectric films for mirrors or filters, obtaining thickness variation reduction and simultaneous deposition

FILM THICKNESS↗
NASA NTRS1969

Multilayer infrared beamsplitter film system

Multilayer infrared beamsplitter film system on a potassium bromide crystal substrate is operational over a wavelength range of 2.5 to 25 microns with nearly equal broadband reflectance and transmittance. It is useful in optical coating, vacuum deposition, radiometry, interferometry, and spectrometry.

Bastien, R. C.↗
NASA NTRS1993

Multilayer thin film design as far ultraviolet quarterwave retarders

At short wavelengths, such as FUV, transparent, optically active materials are scarce. Reflection phase retardation by a multilayer thin film can be a good alternative in this wavelength region. We design a multilayer quarterwave retarder by calculating the electric fields at each boundary in the multilayer thin film. Using this method, we achieve designs of FUV multilayers which provide high, matched reflectances for both s- and p-polarization states, and at the same time a phase difference between these two states of nearly 90 deg. For example, a quarterwave retarder designed at the Lyman-alpha line (121.6 nm) has 81.05 percent reflectance for the s-polarization and 81.04 percent for the p-polarization state. The phase difference between these two polarization states is 90.07 deg. For convenience the retarders are designed for 45 deg angle of incidence, but our design approach can be used for any other angle of incidence. Aluminum and MgF2 are used as film materials and an opaque thick film of aluminum as the substrate.

Kim, Jongmin↗
NASA NTRS1993

Multilayer thin film design as far ultraviolet polarizers

We use a concept of induced transmission and absorption to design multilayer thin film reflection polarizers in the FUV region. We achieve high s-polarization reflectance and a high degree of polarization by means of a MgF2/Al/MgF2 three layer structure on an opaque thick film of aluminum as the substrate. For convenience they are designed at a 45 deg angle of incidence. For example, our polarizer designed for the Lyman-alpha line (121.6 nm) has 88.67 percent reflectance for the s-polarization case, and 1.21 percent for the p-polarization case, with a degree of polarization of 97.31 percent. If we make a double surface polarizer with this design, it will have a degree of polarization of 99.96 percent and s-polarization throughput of 78.62 percent.

Kim, Jongmin↗
NASA NTRS1998

A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

Subramanyam, Guru↗
NASA NTRS1985

High-Mobility Epitaxial Silicon Wafers

New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.

Stermer, R. L., Jr↗
NASA NTRS1984

Thin metal film and multilayers experiment (A0138-3)

The sources of degradation of in state of the art and newly developed components and testing the usefulness of the concept of storing experiment samples in dry nitrogen under launch and space vacuum conditions during reentry mission phase were investigated. Ultraviolet (UV) and extreme ultraviolet (EUV) experiments suffer degradations during space missions of even 1 month duration. It is suggested that the degradation is due to condensation of outgassing products, followed by solar induced polymerization, however, penetrating charged particles are also known to produce volume effects. Degradation may also start immediately after manufacturing of the component due to oxidation, moisture, or chemical corrosion by atmospheric constituents such as CO2 and SO2. When the filters are used as windows for gas absorption cells or gas filters, or when they define the instrumental bandwidth by themselves. The effects of mechanical degradation by thermal cycling and/or dust may cause a dramatic impact.

Delaboudiniere, J. P.↗