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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Study of CMOS strip sensor for future silicon tracker

Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1971

A multispectral image sensor array.

A silicon monolithic multispectral photosensor device is described. Fabrication techniques and preliminary spectral response data are presented. The device is designed to meet small size and weight requirements and to impose a reduced load upon cooling systems in use on satellites.

Gerhard, G. C.↗
DOE OSTI2025

AstroPix: A pixelated HVCMOS sensor for space-based gamma-ray measurement

A next-generation medium-energy gamma-ray telescope targeting the MeV range would address open questions in astrophysics regarding how extreme conditions accelerate cosmic-ray particles, produce relativistic jet outflows, and more. One concept, AMEGO-X, relies upon the mission-enabling CMOS Monolithic Active Pixel Sensor silicon chip AstroPix. AstroPix is designed for space-based use, featuring low noise, low power consumption, and high scalability. Desired performance of the device include an energy resolution of 5 keV (or 10% FWHM) at 122 keV and a dynamic range per-pixel of 25–700 keV, enabled by the addition of a high-voltage bias to each pixel which supports a depletion depth of 500 μ m. This work reports on the status of the AstroPix development process with emphasis on the current version under test, version three (v3), and highlights of version two (v2). Version 3 achieves energy resolution of 10.4 ± 3.2% at 59.5 keV and 94 ± 6 μ m depletion in a low-resistivity test silicon substrate.

Astrophysics instrumentation↗
NASA NTRSDate not supplied

AstroPix: ATLAS-Inspired Silicon Pixels for Future Space-Based Gamma-ray Telescopes

Space-based gamma-ray telescopes such as the Fermi Large Area Telescope have used single sided silicon strip detectors to measure the position of incident gamma-rays with high resolution. At lower energies, two dimensional position information within a single detector is required. This talk investigates the use of monolithic CMOS active pixel silicon sensors –AstroPix – as a novel technology for use in future gamma-ray telescopes. Based upon detectors designed for use in the ATLAS detector at the LHC, AstroPix has the potential to maintain the high energy and angular resolution required of a medium-energy gamma-ray telescope while reducing noise with the dual detection and readout capabilities of a CMOS chip. The status of AstroPix development and testing, as well as outlook for application in future telescopes such as the proposed medium-energy gamma-ray telescope AMEGO-X, will be presented.

Amanda L. Steinhebel↗
NASA NTRS1999

Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

Kiser, J. Douglas↗
DOE OSTI2025

The ladder and readout cables of intermediate silicon strip detector for sPHENIX

A new silicon-strip-type detector was developed for precise charged-particle tracking in the central rapidity region of heavy ion collisions. A new detector and collaboration at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory is sPHENIX, which is a major upgrade of the PHENIX detector. The intermediate tracker (INTT) is part of the advanced tracking system of the sPHENIX detector complex together with a CMOS monolithic-active-pixel-sensor based silicon-pixel vertex detector, a time-projection chamber, and a micromegas-based detector. The INTT detector is barrel shaped and comprises 56 silicon ladders. Two different types of strip sensors of 78 micron pitch and 320 micron thick are mounted on each half of a silicon ladder. Each strip sensor is segmented into 8 × 2 and 5 × 2 blocks with lengths of 16 and 20 mm. Strips are read out with a silicon strip-readout (FPHX) chip. In order to transmit massive data from the FPHX to the down stream readout electronics card (ROC), a series of long and high speed readout cables were developed. This document focuses on the silicon ladder, the readout cables, and the ROC of the INTT. The radiation hardness is studied for some parts of the INTT devices in the last part of this document, since the INTT employed some materials from the technology frontier of the industry whose radiation hardness is not necessarily well known.

43 PARTICLE ACCELERATORS↗
NASA NTRS2002

Directionally Sensitive Silicon Radiation Sensor (VCELL)

Sensors are a mission critical element in many NASA programs and require some very unique properties such as small size, low power, high reliability, low weight. Low cost sensors offer the possibility of technology transfer to the public domain for commercial applications. One sensor application that is important to many NASA programs is the ability to point at a radiation source, such as the sun. Such sensors may be an integral part of the guidance and control systems in space platforms and in remote exploratory vehicles. Sun/solar pointing is also important for ground-based systems such as solar arrays. These systems are not required to be small and lightweight. However, if a sensor with a sun pointing capability was developed that is very small, rugged, lightweight and at the same time low cost, it certainly could be used in existing and perhaps many new ground based applications. The objective of the VCELL (Directionally Sensitive Silicon Radiation Sensor) research is to develop a new and very unique silicon based directionally sensitive radiation sensor which can be fabricated using conventional monolithic IC technologies and which will meet the above requirements. The proposed sensor is a novel silicon chip that is directionally sensitive to incident radiation, providing azimuth and elevation information on the incident radiation. The resulting sensor chip will be appropriate for integration into a silicon IC or useful in a hybrid structure to be interfaced with a standard IEEE 1451 bus interface IC to create an Intelligent Sensor. It is presently estimated that it will require about three man-years of effort to complete the VCELL research and development. This includes the optical, electrical, mechanical and silicon fabrication and testing as well as computer simulations and theoretical analysis and modeling including testing in simulated space environments. This report summarizes the sensor research completed this summer as part of the Summer Faculty Fellowship Program. The primary effort was focused on activity necessary to fabricate prototype sensor.

Koy B. Cook↗
NASA NTRS1993

A Microseismometer for Terrestrial and Extraterrestrial Applications

The scientific and technical requirements of extraterrestrial seismology place severe demands on instrumentation. Performance in terms of sensitivity, stability, and frequency band must match that of the best terrestrial instruments, at a fraction of the size, mass, and power. In addition, this performance must be realized without operator intervention in harsh temperature, shock, and radiation environments. These constraints have forced us to examine some fundamental limits of accelerometer design in order to produce a small, rugged, sensitive seismometer. Silicon micromachined sensor technology offers techniques for the fabrication of monolithic, robust, compact, low-power and -mass accelerometers. However, currently available sensors offer inadequate sensitivity and bandwidth. Our implementation of an advanced silicon micro machined seismometer is based on principles developed at JPL for high-sensitivity position sensor technology. The use of silicon micro machining technology with these new principles should enable the fabrication of a 10(exp -11) g sensitivity seismometer with a bandwidth of at least 0.01 to 20 Hz. The low Q properties of pure single-crystal silicon are essential in order to minimize the Brownian thermal noise limitations generally characteristic of seismometers with small proof masses. A seismometer consists of a spring-supported proof mass and a transducer for measuring its motion. For long period motion a position sensor is generally used, for which the displacement is proportional to the ground acceleration. The mechanical sensitivity can be increased either by increasing the proof mass or decreasing the spring stiffness, neither of which is desirable for planetary applications. Our approach has been to use an ultra sensitive capacitive position sensor with a sensitivity of better than 10(exp -13) m/Hz(exp 1/2). This allows the use of a stiffer suspension and a smaller proof mass. We have built several prototypes using these principles, and tests show that these devices can exhibit performance comparable to state-of-the-art instruments.

Banerdt, W.↗
NASA NTRS1993

A broad-band microseismometer for planetary operations

There has recently been renewed interest in the development of instrumentation for making measurements on the surface of Mars. This is due to the Mars Environmental Survey (MESUR) Mission, for which approximately 16 small, long-lived (2-10 years), relatively inexpensive surface stations will be deployed in a planet-wide network. This will allow the investigation of processes (such as seismology and meteorology) which require the simultaneous measurement of phenomena at many widely spaced locations on the surface over a considerable length of time. Due to the large number of vehicles involved, the mass, power, and cost of the payload will be severely constrained. A seismometer has been identified as one of the highest priority instruments in the MESUR straw-man payload. The requirements for an effective seismic experiment on Mars place a number of constraints on any viable sensor design. First, a large number of sensors must be deployed in a long-lived global network in order to be able to locate many events reliably, provide good spatial sampling of the interior, and increase the probability of seismic detection in the event of localized seismicity and/or high attenuation. From a practical standpoint, this means that individual surface stations will necessarily be constrained in terms of cost, mass, and power. Landing and thermal control systems will probably be simple, in order to minimize cost, resulting in large impact accelerations and wide daily and seasonal thermal swings. The level of seismic noise will determine the maximum usable sensitivity for seismometer. Unfortunately, the ambient seismic noise level for Mars is not well known. However lunar seismic noise levels are several orders of magnitude below that of the Earth. Sensitivities on the order of 10(exp -11)g over a bandwidth of .04 to 20 Hz are thought to be necessary to fulfill the science objectives for a seimometer placed on the Martian surface. Silicon micromachined sensor technology offers techniques for the fabrication of monolithic, robust, compact, lower power and mass accelerometers. Conventional micro-machined accelerometers have been developed and are commercially available for high frequency and large acceleration measurements. The new seismometer we are developing incorporates certain principles of conventional silicon micromachined accelerometer technology. However, currently available silicon micromachined sensors offer inadequate sensitivity and bandwidth for the Mars seismometer application. Our implementation of an advanced silicon micromachined seismometer is based on principles recently developed at JPL for high-sensitivity position sensor technology.

Banerdt, W. B.↗
NASA NTRS2000

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Kim, Q.↗
NASA NTRS2011

Multiple-Event, Single-Photon Counting Imaging Sensor

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Zheng, Xinyu↗
DOE OSTI2023

Advanced silicon tracking detector developments for the future Electron-Ion Collider

The proposed Electron-Ion Collider (EIC) will operate high-luminosity high-energy electron+proton and electron+nucleus collisions at the collision energies from 20 GeV to 141 GeV to solve several fundamental questions in the high energy and nuclear physics fields. Its instantaneous luminosity can reach 10 33-34 cm -2 s -1 and the bunching crossing rate is around 10 ns. The EIC project has received CD1 approval from the US DOE in 2021 and moves toward the machine design and preparation for construction. To realize various particle measurements with high precision at the future EIC, a low material-budget and high-granularity silicon vertex and tracking detector with fine spatial and momentum resolutions and nearly 4π solid angle coverage is desired. The Monolithic Active Pixel Sensor (MAPS) and AC Coupled Low Gain Avalanche Diode (AC-LGAD) technologies stand out of several advanced technology options for the EIC silicon vertex and tracking detector subsystems. The MAPS technology has advanced features of low material budget, low power consumption, good radiation resistance and fine spatial resolution. The AC-LGAD technology can achieve fast timing resolution. Latest studies and progress of the EIC silicon vertex and tracking detector conceptual design, performance validations in simulation and ongoing MAPS and AC-LGAD R&D will be shown. Furthermore, schedule and plan of the EIC project detector development will be discussed as well.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1999

Sensor Lead Wires Positioned on SiC-based Monolithic Ceramic and Fiber- reinforced Ceramic Matrix Composite Subcomponents with Flat and Curved Surfaces

There is strong interest in the development of silicon carbide-based monolithic ceramic and composite materials and components for demanding, high-temperature applications. Thorough characterization of material properties, including high-temperature testing under simulated or actual operating conditions, is a high priority for programs involved in developing these silicon carbide- (SiC) based materials and components. Members of the Sensors and Electronics Technology Branch at the NASA Lewis Research Center are developing minimally intrusive methods of measuring the properties (such as the surface temperature, strain, and heat flux characteristics) of components and subelements that are being tested or operated in hostile, high-temperature environments. Their primary goal is to instrument the test article or operating component with durable sensors that have a minimal effect on test conditions such as the gas flow across the surface of the item and the material response (including the through-thickness conduction of heat). Therefore, the main thrust of their work has been the development of thin-film sensors (e.g., thermocouples or strain gauges) for use on various advanced material test articles, including SiC/SiC composite components. There was a need for a better method of securing sensor lead wires on SiC-based components and subelements that would be tested at temperatures to 1000 C (or higher), to enhance the durability of the overall minimally intrusive sensor system. To address this need, Lewis researchers devised an alternative approach for positioning the sensor lead wires (which are connected to the thin-film sensors) on SiC or SiC/SiC components. A reaction-forming method of joining was used to strongly bond hoop-shaped monolithic SiC and SiC/SiC composite attachments of various sizes to both flat and curved surfaces of SiC/SiC composite subelements (see the photos). This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed at Lewis for the joining of SiC-based ceramics and fiber-reinforced composites.

Kiser, James D.↗
DOE OSTI2024

Heavy Flavor Physics at the sPHENIX Experiment

The sPHENIX experiment is a state-of-the-art jet and heavy flavor physics detector, which successfully recorded its first Au + Au collision data at 200 GeV at the Relativistic Heavy Ion Collider (RHIC). sPHENIX will provide heavy flavor physics measurements at RHIC, covering an unexplored kinematic region and unprecedented precision, to probe the parton energy loss mechanism, parton transport coefficients in quark–gluon plasma, and the hadronization process under various medium conditions. At the center of sPHENIX, the monolithic active pixel sensor (MAPS)-based VerTeX detector (MVTX) is a high-precision silicon pixel detector. The MVTX provides excellent position resolution and the capability of operating in continuous streaming readout mode, allowing precise vertex determination and recording a large data sample, both of which are particularly crucial for heavy flavor physics measurements. In this work, we will show the general performance of heavy-flavor hadron reconstruction. In addition, we will discuss the commissioning experience with sPHENIX. Finally, we will provide the projection of b-hadron and jet observables and discuss the estimated constraints on theoretical models.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1981

Surface acoustic waves/silicon monolithic sensor processor

Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.

Kowel, S. T.↗
DOE OSTI2022

Forward silicon vertex/tracking detector design and R$\&$D for the future Electron-Ion Collider

The proposed high-luminosity high-energy Electron-Ion Collider (EIC) will provide a clean environment to precisely study several fundamental questions in the fields of high-energy and nuclear physics . A low material budget and high granularity silicon vertex/tracking detector is critical to carry out a series of hadron and jet measurements at the future EIC especially for the heavy flavor product reconstruction or tagging. The conceptual design of a proposed forward silicon tracking detector with the pseudorapidity coverage from 1.2 to 3.5 has been developed in integration with different magnet options and the other EIC detector sub-systems. The tracking performance of this detector enables precise heavy flavor hadron and jet measurements in the hadron beam going direction. The detector R&D for the proposed silicon technology candidates: Low Gain Avalanche Diode (LGAD) and radiation hard depleted Monolithic Active Pixel Sensor (MALTA), which can provide good spatial and timing resolutions, is underway. Bench test results of the LGAD and MALTA prototype sensors will be discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗