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Results for “metal-insulator transitions (MIT)”

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Ion diffusion retarded by diverging chemical susceptibility

Abstract For first-order phase transitions, the second derivatives of Gibbs free energy (specific heat and compressibility) diverge at the transition point, resulting in an effect known as super-elasticity along the pressure axis, or super-thermicity along the temperature axis. Here we report a chemical analogy of these singularity effects along the atomic doping axis, where the second derivative of Gibbs free energy (chemical susceptibility) diverges at the transition point, leading to an anomalously high energy barrier for dopant diffusion in co-existing phases, an effect we coin as super-susceptibility. The effect is realized in hydrogen diffusion in vanadium dioxide (VO 2 ) with a metal-insulator transition (MIT). We show that hydrogen faces three times higher energy barrier and over one order of magnitude lower diffusivity when it diffuses across a metal-insulator domain wall in VO 2 . The additional energy barrier is attributed to a volumetric energy penalty that the diffusers need to pay for the reduction of latent heat. The super-susceptibility and resultant retarded atomic diffusion are expected to exist universally in all phase transformations where the transformation temperature is coupled to chemical composition, and inspires new ways to engineer dopant diffusion in phase-coexisting material systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Zero-Strain Metal-Insulator Transition by the Local Fluctuation of Cation Dimerization

The coupled electronic and structural transitions in metal-insulator transition (MIT) hinder ultrafast switching and ultimate endurance. Decoupling these transitions and achieving a zero-strain electronic MIT can overcome the fundamental limitations of MIT in solid materials. Here, this study demonstrates that iso-valent Ti dopants in supercooled VO 2 epitaxial films cause MIT with minimal hysteresis without changing unit-cell volume and crystal symmetry. The Ti dopants in the VO 2 lattice locally alter the configuration of V-V pairs, where the long-range ordering in V-V pairs is disrupted, and the nano-domains of V-V dimers are formed. Strikingly, these local V-V dimers persist even above the electronic transition temperature (T MI ), facilitating the zero-strain electronic MIT with nanoscale structural heterogeneity. The geometrically compatible interface between insulating and metallic phases drastically enhances switching speed and endurance during electrically and optically driven zero-strain MIT. In conclusion, this discovery offers a fresh perspective on the scientific understanding of MIT and the improved functionality in terms of device speed and reliability by decoupling electronic and structural transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport properties in the ferromagnetic oxide La 0.7 ⁢Sr 0.3 ⁢MnO 3 (LSMO) during the electrical triggering of an intrinsic metal-insulator transition (MIT), which produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, i.e., the formation of a high-resistance barrier perpendicular to the current flow, enabling an electrically actuated ferromagnetic-paramagnetic-ferromagnetic phase separation. At the threshold voltage of the MIT triggering, both anisotropic and colossal magnetoresistances exhibit anomalies including a large increase in magnitude and a sign flip. Computational analysis revealed that these anomalies originate from the coupling between the switching-induced phase separation state and the intrinsic magnetoresistance of LSMO. Furthermore, this work demonstrates that driving the MIT material into an out-of-equilibrium resistive switching state provides the means for electrical control of the magnetotransport phenomena.

Complex oxides↗
DOE OSTI2025

Purely electronic insulator-metal transition in rutile VO 2

Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Local structure elucidation of tungsten-substituted vanadium dioxide (V$$_{1-x}$$W$$_x$$O$$_2$$)

Abstract Initially, vanadium dioxide seems to be an ideal first-order phase transition case study due to its deceptively simple structure and composition, but upon closer inspection there are nuances to the driving mechanism of the metal-insulator transition (MIT) that are still unexplained. In this study, a local structure analysis across a bulk powder tungsten-substitution series is utilized to tease out the nuances of this first-order phase transition. A comparison of the average structure to the local structure using synchrotron x-ray diffraction and total scattering pair-distribution function methods, respectively, is discussed as well as comparison to bright field transmission electron microscopy imaging through a similar temperature-series as the local structure characterization. Extended x-ray absorption fine structure fitting of thin film data across the substitution-series is also presented and compared to bulk. Machine learning technique, non-negative matrix factorization, is applied to analyze the total scattering data. The bulk MIT is probed through magnetic susceptibility as well as differential scanning calorimetry. The findings indicate the local transition temperature ( $$T_c$$ T c ) is less than the average $$T_c$$ T c supporting the Peierls-Mott MIT mechanism, and demonstrate that in bulk powder and thin-films, increasing tungsten-substitution instigates local V-oxidation through the phase pathway VO $$_2\, \rightarrow$$ 2 → V $$_6$$ 6 O $$_{13} \, \rightarrow$$ 13 → V $$_2$$ 2 O $$_5$$ 5 .

Wilson, Catrina E. (ORCID:0000000173397318)↗
DOE OSTI2022

Hole doping in a negative charge transfer insulator

RE NiO 3 is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole doping affects the BD transition, we have investigated the electronic structure of single-crystalline thin films of Nd 1-x Ca x NiO 3 by synchrotron based experiments and ab-initio calculations. Here we show that for a small value of x, the doped holes are localized on one or more Ni sites around the dopant Ca 2+ ions, while the BD state for the rest of the lattice remains intact. The effective charge transfer energy (Δ) increases with Ca concentration and the formation of BD phase is not favored above a critical x, suppressing the insulating phase. Our present study firmly demonstrates that the appearance of BD mode is essential for the MIT of the RE NiO 3 series.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Low cost switching circuit for van der Pauw resistivity and Hall measurements at various temperatures

The electrical characterization of materials, particularly superconductors, semiconductors, and those undergoing metal-insulator transitions (MITs), relies significantly on resistivity and Hall measurements as a function of temperature. The van der Pauw four-point probe method is commonly used for such measurements, which involves resistance measurements for different circuit configurations connected to sample contacts. However, repeating these measurements at different temperatures is challenging and time consuming. Here, this study introduces a novel approach utilizing a switching circuit controlled by an Arduino device and a LabVIEW program to automate resistance measurements for different electrical configurations. The effectiveness of this setup was demonstrated by testing V 2 O 3 thin film samples deposited on Al 2 O 3 (001) substrates using DC magnetron sputtering. The MIT temperature of the sample was 115 K during heating and 100 K during cooling. The sample exhibited p-type charge carriers with a Hall coefficient of 1.3 ± 0.1 x 10 -4 cm 3 /C and Hall mobility of 1.7 x 10 -1 cm 2 /V∙s, which is consistent with findings from other studies employing commercial equipment.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Lattice distortions and metal-insulator transition in hexagonal FeS

Using total x-ray scattering and density functional theory calculations based on experimental data, we study the metal-insulator transition (MIT) in the strongly correlated system FeS with hexagonal symmetry. We find that it arises from the combined effect of static lattice distortions and antiferromagnetic ordering, while electron-electron correlations appear to play a minor role. The presence of local lattice distortions above the MIT explains well the evolution of transport and magnetic properties with changing temperature or pressure. Intrinsically, lattice distortions in hexagonal FeS act as lattice degrees of freedom that bridge competing electronic phases, thus facilitating transitions between them. The mechanism of MIT operating in h-FeS appears to be common to strongly correlated binary systems involving 3d transition metals, warranting further investigations on the lattice distortions-property relationship in this broad class of materials using the approach adopted here.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Theory of a continuous bandwidth-tuned Wigner-Mott transition

Here we develop a theory for a continuous bandwidth-tuned transition at fixed fractional electron filling from a metal with a generic Fermi surface to a “Wigner-Mott” insulator that spontaneously breaks crystalline space-group symmetries. Across the quantum critical point, (i) the entire electronic Fermi surface disappears abruptly upon approaching from the metallic side, and (ii) the insulating charge gap and various order parameters associated with the spontaneously broken space-group symmetries vanish continuously upon approaching from the insulating side. Additionally, the insulating side hosts a Fermi surface of neutral spinons. We present a framework for describing such continuous metal-insulator transitions (MITs) and analyze the example of a bandwidth-tuned transition at a filling, $v$=1/6, for spinful electrons on the triangular lattice. By extending the theory to a certain large-$N$ limit, we provide a concrete example of such a continuous MIT and discuss numerous experimental signatures near the critical point. We place our results in the context of recent experiments in moiré transition metal dichalcogenide materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Polaron-induced metal-to-insulator transition in vanadium oxides from density functional theory calculations

Vanadium oxides have been extensively studied as phase-change memory units in artificial synapses for neuromorphic computing due to their metal-insulator transitions (MIT) at or near room temperature. Recently, injection of charge carriers into vanadium oxides, e.g., via optically via a heterostructure, has been proposed as an alternative switching mechanism and also potentially as a means to tune the MIT temperature. In this study, we explore the formation of small polarons in the low temperature (LT) insulating phases for V 3 O 5 ,VO 2 , and V 2 O 3 , and the barriers to their migration using density functional theory calculations. We find that V 3 O 5 exhibits very low hole and electron polaron migration barriers (<100 meV) compared to V 2 O 3 and VO 2 , leading to much higher estimated polaronic conductivity. We also link the relative migration barriers to the amount of distortion that has to travel when the polaron migrate from one site to another. Polarons in V 3 O 5 also have smaller binding energies to vanadium and oxygen vacancy defects. Furthermore, these results suggest that the triggering of the MIT via injection of charge carriers are due to the formation of small polarons that can migrate rapidly through the crystal.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Verwey transition as evolution from electronic nematicity to trimerons via electron-phonon coupling

Understanding the driving mechanisms behind metal-insulator transitions (MITs) is a critical step toward controlling material’s properties. Since the proposal of charge order–induced MIT in magnetite Fe 3 O 4 in 1939 by Verwey, the nature of the charge order and its role in the transition have remained elusive. Recently, a trimeron order was found in the low-temperature structure of Fe 3 O 4 ; however, the expected transition entropy change in forming trimeron is greater than the observed value, which arises a reexamination of the ground state in the high-temperature phase. Here, we use electron diffraction to unveil that a nematic charge order on particular Fe sites emerges in the high-temperature structure of bulk Fe 3 O 4 and that, upon cooling, a competitive intertwining of charge and lattice orders arouses the Verwey transition. Our findings discover an unconventional type of electronic nematicity in correlated materials and offer innovative insights into the transition mechanism in Fe 3 O 4 via the electron-phonon coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Adaptive Discovery and Mixed-Variable Optimization of Next Generation Synthesizable Microelectronic Materials

Design of new microelectronic materials is characterized by several challenges such as high-dimensionality of the atomic structure-composition variable space, formidable cost of directly using high-fidelity simulations for design optimization, dispersity in literature-reported similar materials and synthesis methods, complex physical mechanisms, and mixed qualitative and quantitative design variables that lead to a disjointed design space. Even though machine learning (ML) techniques have been employed to expedite materials innovation, existing methods treat ML and design optimization as two separate processes, failing to resolve the fundamental challenges associated with high dimensionality and mixed-variable complexity. We have developed a ML enhanced mixed-variable material design optimization framework to efficiently extract useful information from existing data in literature and physics-based simulations to guide the autonomous search for optimal materials. Our proposed framework is composed of four computational modules: (1) a natural language processing (NLP) based virtual screening module, (2) classification based concept exploration module, (3) a density functional theory (DFT)-based high-fidelity evaluation model, and (4) a novel latent-variable Gaussian process (LVGP) ML model for mixed-variable problems with uncertainty quantification, which seamlessly integrates with Bayesian Optimization (BO) and achieves superb efficiency through embedded physics-based dimension reduction. Our approach is demonstrated and validated using the testbed of functional materials exhibiting metal-insulation transitions (MITs), with the targeted reversible resistivity changes (∼10^5) near room temperature. At the end of the 30-month project, we have developed a series of new ML techniques using NLP, conditional variational autoencoders, active learning, latent-variable Gaussian processes, integrated with Bayesian optimization. Our project has resulted in new predicted MITs compounds and improved understanding of MITs microscopic mechanisms, which in turn will revolutionize microelectronics science to provide energy-saving solutions. Our research has improved both creativity and efficiency in transforming rare-event discoveries of new functional materials to persistent innovations. In addition to open-sourcing the online MIT database and the classification model, the LVGP open source code has been downloaded more than 15,000 times within two years. More than 40 MIT compounds have been identified and many have been pursued experimentally via collaborators. The research results are published in close to 20 collaborative papers in high-impact journals, such as Chem. Mater., Appl. Phys. Rev., Sci. Rep., among others of design space.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High pO2 Flux Growth and Characterization of NdNiO3 Crystals

Single crystals of the perovskite nickelate NdNiO3 with dimensions of up to 50 μm on edge have been successfully grown using the flux method at a temperature of 400 °C and oxygen pressure of 200 bar. The crystals were investigated by a combination of techniques, including high-resolution synchrotron X-ray single-crystal and powder diffraction and physical property measurements such as magnetic susceptibility and resistivity. Resistivity measurements revealed a metal-insulator transition (MIT) at TMIT~180 K with apparent thermal hysteresis; however, no superlattice peaks or peak splitting below TMIT, which corresponds to a structural transition from Pbnm to P21/n, was observed. The successful growth of NdNiO3 crystals at relatively low temperatures and oxygen pressure provides an alternative approach for preparing single crystals of interesting perovskites such as RNiO3 (R = Sm-Lu) and parent phases of superconducting square planar nickelates.

Wang, Xiaoli↗
DOE OSTI2025

Electrically‐Driven Metal‐Insulator Transitions Emerging from Localizing Current Density and Temperature

Negative differential resistance (NDR) is a key electronic response enabling two‐terminal artificial neurons that can be achieved through different physical phenomena, including phase‐homogeneous current density and temperature (electro‐thermal) localizations and spatially‐localized metal‐insulator phase transitions (MITs). These two effects have been observed to occur sequentially in select electrically‐biased transition metal oxides. However, it is unknown why and under what conditions localizing behaviors precede MITs, particularly as a function of device length scale. To this end, the interplay between phase‐homogeneous electro‐thermal localizations and MITs is investigated in a 3D multiphysics simulation of a lateral thin film device, using the material properties of the prototype MIT material VO 2 . These findings demonstrate that the MIT is nucleated through dynamically localizing current density and temperature. A critical device width (≈0.7 µm in this study) is identified, below which both the electrically‐induced electro‐thermal and phase inhomogeneities cease to appear. It is demonstrated that the formation of spatial inhomogeneities directly relates to device dimensions, and demonstrate the decoupling of NDR from the MIT through device scaling relationships. These results provide insight into the material phenomena underlying the material's electrical responses, clarifying conditions under which spatial inhomogeneities form in electrically‐biased MIT materials.

artificial neuron↗
DOE OSTI2022

Probing the Critical Nucleus Size in the Metal-Insulator Phase Transition of VO 2

In a first-order phase transition, critical nucleus size governs nucleation kinetics, but the direct experimental test of the theory and determination of the critical nucleation size have been achieved only recently in the case of ice formation in supercooled water. The widely known metal-insulator phase transition (MIT) in strongly correlated VO 2 is a first-order electronic phase transition coupled with a solid-solid structural transformation. It is unclear whether classical nucleation theory applies in such a complex case. Here we directly measure the critical nucleus size of the MIT by introducing size-controlled nanoscale nucleation seeds with focused ion irradiation at the surface of a deeply supercooled metal phase of VO 2 . The results compare favorably with classical nucleation theory and are further explained by phase-field modeling. This Letter validates the application of classical nucleation theory as a parametrizable model to describe phase transitions of strongly correlated electron materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Domain nucleation across the metal-insulator transition of self-strained V 2 O 3 films

Bulk V 2 O 3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at T C ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V 2 O 3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V 2 O 3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V 2 O 3 , especially the strain-induced large variations along the c axis. Finally, engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Local strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by X-ray microscopy

Electrical triggering of a metal–insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of the material. Using X-ray microdiffraction and dark-field X-ray microscopy, we show that electrothermal MIT triggering leads to the development of an inhomogeneous strain profile across the switching device, even when the material does not undergo a pronounced, discontinuous structural transition coinciding with the MIT. Diffraction measurements further reveal evidence of unique features associated with MIT triggering including lattice distortions, tilting, and twinning, which indicate structural nonuniformity of both low- and high-resistance regions inside the switching device. Such lattice deformations do not occur under equilibrium, zero-voltage conditions, highlighting the qualitative difference between states achieved through increasing temperature and applying voltage in nonlinear electrothermal materials. Electrically induced strain, lattice distortions, and twinning could have important contributions in the MIT triggering process and drive the material into nonequilibrium states, providing an unconventional pathway to explore the phase space in strongly correlated electronic systems.

42 ENGINEERING↗
DOE OSTI2024

Suppression of metal-to-insulator transition and stabilization of superconductivity by pressure in Re 3 Ge 7

The effect of pressure on the low-temperature states of the Re 3 ⁡Ge 7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature-dependent resistance of Re 3 ⁡Ge 7 behaves quasilinearly from room temperature down to 60 K, then undergoes a two-step metal-to-insulator transition (MIT) at temperatures T 1 =59.4K and T 2 =58.7K, which may be related to a structural phase transition or occurrence of charge-density wave ordering. Upon applying pressure, the two-step (T 1 ,T 2 ) MIT splits into three steps (T 1 ,T 2 . and T 3 ) above 1 GPa, and all traces of MITs are fully suppressed by ~8 GPa. Subsequently, the onset of bulk superconductivity (SC) occurs between 10.8 and 12.2 GPa and persists to our highest pressure of 26.8 GPa. At 12.2 GPa the superconducting transition temperature, T c , and upper critical field, H c ⁢2 reach the maximum of T c (onset) ~5.9 K and H c ⁢2 (1.8 K) ~14 kOe. Finally, our results not only present the observation of SC under high pressure in Re 3 ⁡Ge 7 but also delineate the interplay between SC and other competing electronic states by creating a T-p phase diagram for this potentially topologically nontrivial system Re 3 ⁡Ge 7 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗