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At least 19 records

Spray-Coated Silver as Backside Metal for III–V Photovoltaic Devices on GaAs and Ge Substrates

The accelerated increase in demand for III-V space photovoltaics on GaAs and Ge substrates, as well as growing interests in terrestrial applications, motivate the development of cost-effective, high-throughput processing routes of these materials. Here, in this study, we assess spray-coated silver (Ag) back contact metallization as a substitute for electron-beam-evaporated metals currently used in industry. We find that the spray-coated Ag films are dense and continuous. By means of quantum efficiency, dark current-voltage, and illuminated current-voltage characterizations, we show that spray-coated GaAs and Ge solar cells perform similarly to baseline devices with electroplated Au, including under high current densities. We estimate that the thresholds for specific contact resistance below which back contacts do not significantly contribute to resistive loss are 2.1 x 10 -1 Ω•cm 2 for GaAs and 4.7 x 10 -2 Ω•cm 2 for Ge. We experimentally confirm that our spray-coated samples meet these requirements. Peel tests show that the adhesion of plain spray-coated Ag films to the back of p-type Ge substrates used in III-V solar cells is currently insufficient, whereas adhesion to p-type GaAs substrates is outstanding and requires no further optimization.

14 SOLAR ENERGY

Process development for automated solar cell and module production. Task 4: Automated array assembly

A process sequence which can be used in conjunction with automated equipment for the mass production of solar cell modules for terrestrial use was developed. The process sequence was then critically analyzed from a technical and economic standpoint to determine the technological readiness of certain process steps for implementation. The steps receiving analysis were: back contact metallization, automated cell array layup/interconnect, and module edge sealing. For automated layup/interconnect, both hard automation and programmable automation (using an industrial robot) were studied. The programmable automation system was then selected for actual hardware development.

Source record

A low-cost photovoltaic cell process based on thick film techniques

The low-cost, easily automated processing for solar cell fabrication being developed at Spectrolab for the DOE LSA program is described. These processes include plasma-etching, spray-on diffusion sources and antireflective coating, thick film metallization, aluminum back contacts, laser scribing and ultrasonic soldering. The process sequence has been shown to produce solar cells having 15% conversion efficiency at AM1 which meet the cell fabrication budget required for the DOE 1986 cost goal of $0.70 per peak watt in 1980.

Mardesich, N.

Emission properties of a hybrid metallized diamond(001) photocathode

The spectral emission characteristics of a proof-of-concept hybrid metallized diamond(001) photocathode are presented. The quantum efficiency (QE) is shown to be determined by the photoinjection efficiency across the ohmic contact at the back metallized face, whereas the mean transverse energy (MTE) of the photoemitted electrons is consistent with an (optical)phonon-assisted and momentum-resonant Franck-Condon mechanism [Franck-Condon electron emission from polar semiconductor photocathodes, Phys. Rev. Appl. 23, 054065 (2025)] following electron drift transport to the untreated diamond(001) front emission face. Emission is observed from both the lower and upper conduction bands of diamond with positive and negative electron affinity, respectively. A potential route to the realization of a red-visible photocathode based on this concept with a sub-50 meV MTE and a QE greater than 0.1% is discussed.

Density of states

Back surface reflectors for solar cells

Sample solar cells were fabricated to study the effects of various back surface reflectors on the device performance. They are typical 50 micrometers thick, space quality, silicon solar cells except for variations of the back contact configuration. The back surfaces of the sample cells are polished to a mirror like finish, and have either conventional full contacts or grid finger contacts. Measurements and evaluation of various metallic back surface reflectors, as well as cells with total internal reflection, are presented. Results indicate that back surface reflectors formed using a grid finger back contact are more effective reflectors than cells with full back metallization and that Au, Ag, or Cu are better back surface reflector metals than Al.

Chai, A. T.

Screen printing technology applied to silicon solar cell fabrication

The process for producing space qualified solar cells in both the conventional and wraparound configuration using screen printing techniques was investigated. Process modifications were chosen that could be easily automated or mechanized. Work was accomplished to optimize the tradeoffs associated with gridline spacing, gridline definition and junction depth. An extensive search for possible front contact metallization was completed. The back surface field structures along with the screen printed back contacts were optimized to produce open circuit voltages of at least an average of 600 millivolts. After all intended modifications on the process sequence were accomplished, the cells were exhaustively tested. Electrical tests at AMO and 28 C were made before and after boiling water immersion, thermal shock, and storage under conditions of high temperature and high humidity.

Thornhill, J. W.

Multi-100 kW: Planar low cost solar array development

The applicability of selected low cost options to solar array blanket design was studied by fabricating representative modules and submitting them to thermal cycle environment. Large area (5.9 x 5.9 cm) solar cells of 3 varieties were purchased: (1) Standard wraparound, (2) Copper contacts substituted for the conventional Titanium-Palladium-Silver, and (3) Standard wraparound except with gridded back contact instead of continuous metallization. The baseline cell was purchased to compare fabrication cost and to serve as a control cell during test evaluation of the other two cells. All cells were assembled into either substrate modules where the cell is individually filtered and welded to an integrated Kapton-copper circuit or into a superstrate configuration with 4 cells jointly adhered to a single sheet of microsheet and then welded to the integrated Kapton-copper circuit. Cell quality, particularly in the metallization of contacts, was less than desired. Problems were encountered with copper metallization in laying down a barrier metal which would ohmically bond to the silicon. The cells received were shunted (sintered) or with low contact pull strength (non-sintered), thus leading to the decision to solder rather than weld the copper cells to the Kapton substrate.

Source record

Low-Temperature Gold Deposition Improves CdTe Back Contacts

Improved back contacts can benefit CdTe photovoltaics (PV). In this work, Cd(Se,Te) PV absorbers are cooled during Au evaporation to thermally quench a chemical reaction occurring between gold and CdTe and the generation of a reaction product that lowers device efficiency. Reducing substrate temperature enhances PV power conversion efficiency via open-circuit voltage and fill factor increases. X-ray photoelectron spectroscopy (XPS) reveals that lower temperature also reduces chemical perturbations of the CdTe, potentially linking back contact formation to a CdTe degradation product that hinders PV performance. Comparing reaction enthalpy and substrate heating energy shows that back contact formation by sputtering elemental metals onto ZnTe may exhibit a degradation pathway analogous to that of CdTe/Au reported here. Degradation-diminishing contact formation processes are therefore of general interest for optoelectronic devices, and the reduced substrate temperature in this study is one example.

14 SOLAR ENERGY

Front and back polysilicon-contacted silicon solar cells

The first use of a (silicon)/ (heavily doped polysilicon)/ (metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact control samples, the polysilicon-back solar cells show improvements in red spectral response and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

Lindholm, F. A.

Short-circuit current improvement in thin cells with a gridded back contact

The use of gridded back contact on thin silicon solar cells 50 micrometers was investigated. An unexpected increase in short circuit current of almost 10 percent was experienced for 2 cm x 2 cm cells. Control cells with the standard continuous contact metallization were fabricated at the same time as the gridded back cells with all processes identical up to the formation of the back contact. The gridded back contact pattern was delineated by evaporation of Ti-Pd over a photo-resist mask applied to the back of the wafer; the Ti-Pd film on the controls was applied in the standard fashion in a continuous layer over the back of the cell. The Ti-Pd contacts were similarly applied to the front of the wafer, and the grid pattern on both sides of the cell was electroplated with 8-10 micrometers of silver.

Giuliano, M.

Coplanar back contacts for thin silicon solar cells

The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.

Storti, G.

Thin silicon solar cell performance characteristics

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Gay, C. F.

Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Results of an ongoing research program into the reliability of terrestrial solar cells are presented. Laboratory accelerated testing procedures are used to identify failure/degradation modes which are then related to basic physical, chemical, and metallurgical phenomena. In the most recent tests, ten different types of production cells, both with and without encapsulation, from eight different manufacturers were subjected to a variety of accelerated tests. Results indicated the presence of a number of hitherto undetected failure mechanisms, including Schottky barrier formation at back contacts and loss of adhesion of grid metallization. The mechanism of Schottky barrier formation is explained by hydrogen, formed by the dissociation of water molecules at the contact surface, diffusing to the metal semiconductor interface. This same mechanism accounts for the surprising increase in sensitivity to accelerated stress conditions that was observed in some cells when encapsulated.

Lathrop, J. W.

MOD silver metallization for photovoltaics

Photovoltaic cells require back side metallization and a collector grid system on the front surface. Both front and back surface metallizations should have good adhesion, low contact resistance, low sheet resistance, long term stability, and their deposition methods should not degrade the n-p junction. Advantages and disadvantages of different deposition methods are discussed.

Vest, G. M.

Solar Cels With Reduced Contact Areas

Efficiency of silicon solar cells increased about 20 percent using smaller metal-contact area on silicon at front and back of each cell. Reduction in contact area reduces surface recombination velocity under contact and thus reduces reverse saturation current and increases opencircuit voltage..

Daud, T.

Mass spectra of neutral particles released during electrical breakdown of thin polymer films

A special type of time-of-flight mass spectrometer triggered from the breakdown event was developed to study the composition of the neutral particle flux released during the electrical breakdown of polymer films problem. Charge is fed onto a metal-backed polymer surface by a movable smooth platinum contact. A slowly increasing potential from a high-impedance source is applied to the contact until breakdown occurs. The breakdown characteristics is made similar to those produced by an electron beam charging system operating at similar potentials. The apparatus showed that intense instantaneous fluxes of neutral particles are released from the sites of breakdown events. For Teflon FEP films of 50 and 75 microns thickness the material released consists almost entirely of fluorocarbon fragments, some of them having masses greater than 350 atomic mass units amu, while the material released from a 50 micron Kapton film consists mainly of light hydrocarbons with masses at or below 44 amu, with additional carbon monoxide and carbon dioxide. The apparatus is modified to allow electron beam charging of the samples.

Kendall, B. R. F.

Solar cell having improved back surface reflector

The operating temperature is reduced and the output of a solar cell is increased by using a solar cell which carries electrodes in a grid finger pattern on its back surface. These electrodes are sintered at the proper temperature to provide good ohmic contact. After sintering, a reflective material is deposited on the back surface by vacuum evaporation. Thus, the application of the back surface reflector is separate from the back contact formation. Back surface reflectors formed in conjunction with separate grid finger configuration back contacts are more effective than those formed by full back metallization of the reflector material.

Chai, A. T.

Selenium Migration and Local Structures in Cu‐Doped CdSeTe Solar Cells after Aging

Selenium grading plays a critical role in state-of-the-art Cadmium Telluride photovoltaic cells by enhancing long-wavelength absorption and extending minority carrier lifetimes —key to enabling the current performance record of 23.08%. However, very little is understood about selenium motion. In this study, a comprehensive, multimodal, and multiscale approach is employed to investigate Se migration and local structural changes in copper (Cu)-doped CdSeTe solar cells subjected to accelerated stress. X-ray fluorescence (XRF) microscopy shows unexpected levels of Se diffusion after 500 h under heat (75°C) and light (0.8 suns, 80 mW/cm 2 ), suggesting the coexistence of fast and slow diffusion channels even at low temperatures, with unexpectedly low activation energies (<0.85 eV). X-ray Absorption Near Edge Structure (XANES) analysis indicates a preferential migration of Se atoms to anionic lattice sites and a reduction in Se-Cl co-passivation at Te-terminated dislocation cores. Furthermore, these findings point to a reconfiguration of Se local environments and highlight the potential role of extended structural defects in enabling Se transport at low temperatures. Additionally, XANES results suggest that the presence of metallic Cu across the absorber layer may contribute to back-contact degradation and reduced hole density in both fresh and aged devices.

14 SOLAR ENERGY