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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Integration of CeO 2 -Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses

The CeO 2 -based memristor has attracted significant attention due to its intrinsic resistive switching (RS) properties, large on/off ratio, and great plasticity, making it a promising candidate for artificial synapses. However, significant challenges such as high power consumption and poor device reliability hinder its broad application in neuromorphic microchips. To tackle these issues, in this work, we design a novel bilayer (BL) memristor by integrating a CeO 2 -based memristor with a Co-CeO 2 vertically aligned nanocomposite (VAN) layer and compare it with the single layer (SL) memristor. Preliminary electrical testing reveals that the BL memristor offers a reduced set/reset voltage (~67% lower), a higher on/off ratio (~5 × 10 2 ), enhanced device reliability, and improved device-to-device variation compared to the SL memristor. Insight from COMSOL simulation, coupled with microstructural analysis, provides a comprehensive elucidation on how the VAN layer facilitates the selective conductive filament (CF) formation. Subsequently, the plasticity of the BL memristor is evaluated through long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-time-dependent plasticity (STDP). The spiking neural network (SNN) built upon the BL memristor achieves remarkable accuracy (~94%) after only 12 iterations, underscoring its potential for high-performance neural networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Probing the Effects of the First Atomic Layer on the Dynamic Behavior of Sub-2 nm MgO/Al 2 O 3 Memristors

As electronic devices continue to scale down from the current sub-5 nm range, atomic-scale control of defects becomes increasingly crucial to suppressing their impact on the physical properties of the devices. Memristors present an excellent example as a nonlinear and dynamic device with high speed and endurance required for electronic applications ranging from neuromorphic computing to nonvolatile memories. Herein we investigate the impact of atomic defects in sub-2 nm thick MgO/Al 2 O 3 atomic layer stack (ALS) memristors that use an M1 (switching layer)/M2 (oxygen vacancy reservoir layer) bilayer structure grown using in vacuo atomic layer deposition (iALD). Intriguingly, we revealed a direct correlation of the atomic defects in the M2 layer with the memristor dynamic behavior using a combined analysis of in situ scanning tunneling spectroscopy (iSTS) on the M2 layer and ex situ characterization on the memristors. Specifically, incomplete coverage of the 1st ALD atomic layer of M2 on the electrode yields defects at the M2/electrode interface. Despite the monotonic increase of ALD coverage, by almost three-fold from ~30% to >90%, at completion of the M2 layer of ~ 0.7 nm in thickness, the impact of the defects on the M2/electrode interface has been found detrimental to both memristor switching speed and endurance. Guided by atomistic simulation, we addressed the issue of interface defects via tuning of the Al surface hydroxylation to increase the first atomic layer ALD coverage to ~75%, leading to improved memristor switching speed and endurance by several orders of magnitude. In conclusion, these findings shed light on the correlation between the atomic defects and the dynamic behavior of sub-2 nm memristors and the importance of minimizing the atomic defects in memristors for future electronic applications.

Atomic Layer Deposition↗
DOE OSTI2026

Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor-based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi-transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro-thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics-based compact modeling framework, we bridge negative differential resistance (NDR) and bias-tunable reactance, which underlies spiking dynamics in electro-thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current-controlled (CC-) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage-controlled (VC-) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La 0.7 Ca 0.3 MnO 3 as a representative VC-NDR material and comparing it with LaCoO 3 manifesting CC-NDR, we explain the physical origins of their distinct current-voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro-thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.

active reactance↗
DOE OSTI2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.

14 SOLAR ENERGY↗
DOE OSTI2025

Optoelectronic polymer memristors with dynamic control for power-efficient in-sensor edge computing

Abstract As the demand for edge platforms in artificial intelligence increases, including mobile devices and security applications, the surge in data influx into edge devices often triggers interference and suboptimal decision-making. There is a pressing need for solutions emphasizing low power consumption and cost-effectiveness. In-sensor computing systems employing memristors face challenges in optimizing energy efficiency and streamlining manufacturing due to the necessity for multiple physical processing components. Here, we introduce low-power organic optoelectronic memristors with synergistic optical and mV-level electrical tunable operation for a dynamic “control-on-demand” architecture. Integrating signal sensing, featuring, and processing within the same memristors enables the realization of each in-sensor analogue reservoir computing module, and minimizes circuit integration complexity. The system achieves 97.15% fingerprint recognition accuracy while maintaining a minimal reservoir size and ultra-low energy consumption. Furthermore, we leverage wafer-scale solution techniques and flexible substrates for optimal memristor fabrication. By centralizing core functionalities on the same in-sensor platform, we propose a resilient and adaptable framework for energy-efficient and economical edge computing.

Optics↗
DOE OSTI2025

Tracking oxygen vacancy migration in memristor devices using operando hard X-ray photoelectron spectroscopy

Fabrication of ultrathin (sub-2 nm) oxide semiconductor memristors poses the fundamental challenge of achieving oxide growth with atomic precision in terms of electronic structure and defect formation. Recently, ultrathin memristors consisting of bilayers of mixed Al 2 O 3 and MgO atomic layers were fabricated using an in vacuo atomic layer deposition process. This approach offers a unique platform for precise atomic control of oxygen vacancies in the device in which the vacancies are introduced by placing MgO atomic layers between pristine Al 2 O 3 layers. In this work, we present a systematic operando Hard X-ray PhotoElectron Spectroscopy (HAXPES) study of the switching of such memristors, combined with complementary current-voltage and capacitance-voltage (C-V) measurements. We used a memristor stack of Al 2 O 3 /MgO atomic layers, with the MgO-containing oxide deposited on the bottom Al metal electrode and a pure Al 2 O 3 layer below the top Pd electrode. HAXPES analysis shows a substantial change in the chemical shift of the Aluminum oxide when switching between the ”OFF” and ”ON” states indicative of a redistribution of oxygen vacancies in the device active layer. Interestingly, subsequent switching to the OFF state shows hysteretic behavior indicating the retention of some oxygen vacancies in the top Al 2 O 3 layer. This vacancy retention can be correlated with the stochastic behavior of the switching voltage observed in these devices. C–V measurements show a clear frequency-dependent response in the OFF state, consistent with enhanced polarization and vacancy trapping at low frequencies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Composite Behavior of Nanopore Array Large Memristors

Synthetic nanopores were recently demonstrated with memristive and nonlinear voltage-current behaviors, akin to ion channels in a cell membrane. Such ionic devices are considered a promising candidate for the development of brain-inspired neuromorphic computing techniques. In this work, we show the composite behavior of nanopore-array large memristors, formed with different membrane materials, pore sizes, electrolytes, and device arrangements. Anodic aluminum oxide (AAO) membranes with 5 nm and 20 nm diameter pores and track-etched polycarbonate (PCTE) membranes with 10 nm diameter pores are tested and shown to demonstrate memristive and nonlinear behaviors with approximately 107–1010 pores in parallel when electrolyte concentration across the membranes is asymmetric. Ion diffusion through the large number of channels induces time-dependent electrolyte asymmetry that drives the system through different memristive states. The behaviors of series composite memristors with different configurations are also presented. In addition to helping understand fluidic devices and circuits for neuromorphic computing, the results also shed light on the development of field-assisted ion-selection-membrane filtration techniques as well as the investigations of large neurons and giant synapses. Further work is needed to de-embed parasitic components of the measurement setup to obtain intrinsic large memristor properties.

Chemistry↗
DOE OSTI2024

Localized Conduction Channels in Memristors

Since the early 2000s, the impending end of Moore’s scaling, as the physical limits to shrinking transistors have been approached, has fueled interest in improving the functionality and efficiency of integrated circuits by employing memristors or two-terminal resistive switches. Formation (or avoidance) of localized conducting channels in many memristors, often called “filaments”, has been established as the basis for their operation. While we understand some qualitative aspects of the physical and thermodynamic origins of conduction localization, there are not yet quantitative models that allow us to predict when they will form or how large they will be. Here, in this work, we compile observations and explanations of channel formation that have appeared in the literature since the 1930s, show how many of these seemingly unrelated pieces fit together, and outline what is needed to complete the puzzle. This understanding will be a necessary predictive component for the design and fabrication of post-Moore’s-era electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Anodized Aluminum Oxide Membrane Ionic Memristors

Memory effect in ion transport (IT) at the solid–solution interface is uniquely attractive in that the conductance depends on or “memorizes” the previous states. Hysteretic and rectified transport properties offer exciting potential to developing advanced iontronics and neuromorphic functions, improving the efficiency of energy conversion and electrochemical processes, and overcoming the selectivity-throughput bottleneck in the enrichment of low abundant species for environment- and energy-friendly separations, among others. Herein, memory effects are discovered in the rectified electrokinetic IT through anodized aluminum oxide (AAO) membranes containing densely packed highly ordered nanochannels (10 10 per cm 2 ). Characteristic memristor responses of pinched current–potential loops are resolved in voltammetric experiments and successfully reproduced through finite element simulation. Excitatory and inhibitory conductance states are shown to arise from the enrichment and depletion of mobile charge carriers. Structurewise, the transport symmetry is broken by the barrier oxide layer (BOL) on the one end of the cylindrical nanochannels across the AAO membranes. Charge selectivity is attributed to the gradient(s) of the space charge density across the BOL characterized by depth profiling via X-ray photoelectron spectroscopy analysis. The space charge gradient(s) overcomes the fundamental limitation of widely exploited surface charge effects to enable intense rectification and hysteresis prevailing at very high ionic concentrations up to 1–2 M. A new strategy is developed for controlling the preferential IT direction and selectivity via counterion intercalation and extraction/exchange. Mechanistic understanding is further confirmed through parameter variations such as potential scan rate and ionic strength, which also demonstrates convenient controls of the related functions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Atomistic Mechanisms of the Crystallographic Orientation‐Dependent Cu 1.8 S Conductive Channel Formation in Cu 2 S‐Based Memristors

Achieving multiple types of resistive switching in a single material with controlled ionic motion is a key challenge in neuromorphic computing, traditionally addressed by combining materials with distinct switching behaviors. Here, Cu 2-x S is identified as a promising candidate to overcome this limitation due to its hierarchical phase transitions. Using in situ biasing experiments, reversible and non-reversible phase transitions (and resistive switching) are demonstrated in γ-Cu 2 S by controlling the compliance current. The formation of parallel high-digenite Cu 1.8 S channels, orientated along the γ-Cu 2 S [201] crystallographic direction, drives the nonvolatile resistive switching. These channels emerge via an intermediate δ-Cu 2 S phase and are stabilized at room temperature by residual strains, alongside β-Cu 2 S phase. In conclusion, the work clarifies the complex, electrically triggered phase transformations in γ-Cu 2 S, and highlights the potential of Cu 2-x S as a versatile material for neuromorphic computing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Origin of large variations of current on/off ratio and switching voltage in atomically thin memristors: an exascale ab initio transport study

Nonvolatile resistive switching in two-dimensional monolayers opens a new avenue for high-density memory/computing devices. However, questions remain as to why the current on/off ratio and switching voltage vary significantly among different devices. Here, we simulate electronic transport of large systems consisting of a h-BN monolayer sandwiched by gold electrodes, enabled by an implementation of the nonequilibrium Green’s function method in the exascale density functional theory (DFT) code: Real-space MultiGrid. Systematic calculations reveal that the wide range of on/off ratios is due to variations in interface distances between the electrode and h-BN that significantly modulate their wavefunction overlap. In addition, DFT calculations demonstrate that the energy barrier of a gold atom dissociating from the electrode to h-BN increases dramatically with the interface distance, thereby explaining the strong dependence of the switching voltage on distance. Our work demonstrates the significance of interface distance in governing the current on/off ratio and switching voltage.

Electronic devices↗
DOE OSTI2025

Two-Dimensional Silk Crystal Films as Matrix Layer for High-Performance Microelectronics

This study explores a bio-inspired approach for memristive devices by combining Keggin-type polyoxometalates (POMs)-[SiW 12 O 40 ] 4 (POM-T) and [PW 12 O 40 ] 3 (POM-P), with silk fibroin (SF) to create 2D SF–POM layers on highly ordered pyrolytic graphite (HOPG) as resistive switching layers for memristors. We propose that the ordered SF layer template 0D POMs facilitate the formation of conductive filaments, thereby enhancing the variability of the manufactured memristors. AFM analysis revealed that both SF and SF–POM layers shared similar morphologies, while SF–POM–T formed larger aggregates, likely due to the stronger acidity of POM-T, which probably caused SF to aggregate and alter its secondary structure. Scanning Kelvin probe microscopy (SKPM) revealed that POMs reduced the contact potential difference of HOPG, resulting in lower work functions. Compared to an SF device, the SF–POM–P device showed improved memristive behavior, with a larger current gap and good repeatability over multiple sweeps; whereas the SF–POM–T device did not exhibit memristor activity, likely due to acidity-induced disruption of the SF template’s order and CF formation. More importantly, SF–POM–P devices also demonstrated programmable memristive states. Finally, combining simulation-driven memristor modeling, we showcase a co-design workflow for advancing bioinspired memristors through new materials design, synthesis, and device modeling and development.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Nanopores with dynamic pore opening diameter

Solid state nanopores have emerged as model systems for understanding transport properties on the nanoscale. They serve as templates for both preparing mimics of biological channels and designing biological sensors. Unlike their biological inspirations, the majority of nanopores prepared thus far, however, have been structurally static devices such that the pore opening diameter is fixed. If we could prepare nanopores whose opening diameter fluctuated in time with controlled amplitude at known locations in the pore, we could create ionic memristors as well as achieve new transport modes. Here we present ∼10 nm diameter single nanopores drilled through a 10 nm thick gold layer positioned on top of a 30 nm thick silicon nitride film. Two types of devices were prepared; one containing single stranded DNA and the other containing hairpin DNA attached to the discrete layer of gold using thiol chemistry. When an external electric field was applied across a nanopore with single stranded DNA, the nanoconfined DNA molecules exhibited steric and electrical constraints that led to memristor-like behavior in the current–voltage curves. The degree of hysteresis was controlled by salt concentration, magnitude of voltage and pore diameter. In contrast, nanopores containing DNA hairpins conducted similar currents in forward and reverse bias in agreement with the rigidity of the hairpin molecule. The experiments are explained by Brownian dynamics simulations that reveal voltage and salt concentration induced changes in DNA extension. The degree of DNA extension was also found to be dependent on the location of the molecules along the pore axis. The nanopores presented here provide the first steps towards preparation of non-equilibrium nanopore systems.

Vlassiouk, Ivan [ORNL] (ORCID:0000000254940386)↗
DOE OSTI2025

Mapping Spiking Neural Networks to Heterogeneous Crossbar Architectures using Integer Linear Programming

Advances in novel hardware devices and architectures allow Spiking Neural Network (SNN) evaluation using ultra-low power, mixed-signal, memristor crossbar arrays. As individual network sizes quickly scale beyond the dimensional capabilities of single crossbars, networks must be mapped onto multiple crossbars. Crossbar sizes within modern Memristor Crossbar Architectures (MCAs) are determined predominately not by device technology but by network topology; more, smaller crossbars consume less area thanks to the high structural sparsity found in larger, brain-inspired SNNs. Motivated by continuing increases in SNN sparsity due to improvements in training methods, we propose utilizing heterogeneous crossbar sizes to further reduce area consumption. This approach was previously unachievable as prior compiler studies only explored solutions targeting homogeneous MCAs. Our work improves on the state-of-the-art by providing Integer Linear Programming (ILP) formulations supporting arbitrarily heterogeneous architectures. By modeling axonal interactions between neurons, our methods produce better mappings while removing inhibitive a priori knowledge requirements. We first show a 16.7-27.6% reduction in area consumption for square-crossbar homogeneous architectures. Then, we demonstrate 66.9-72.7% further reduction when using a reasonable configuration of heterogeneous crossbar dimensions. Next, we present a new optimization formulation capable of minimizing the number of inter-crossbar routes. When applied to solutions already near-optimal in area, an 11.9-26.4% routing reduction is observed without impacting area consumption. Finally, we present a profile-guided optimization capable of minimizing the number of runtime spikes between crossbars. Compared to the best-area-then-route optimized solutions, we observe a further 0.5-14.8% inter-crossbar spike reduction while requiring 1–3 orders of magnitude less solver time.

Pohl, Devin [ORNL] (ORCID:0009000040149027)↗
DOE OSTI2026

Synaptic Functionality and Neuromorphic Information Processing in Membrane Ion Channel Junctions

The human brain performs complex memory and computational tasks with high energy efficiency by regulating ion transport through membrane channels. These signaling mechanisms have been inspiring the development of nanofluidic memristors that emulate synaptic behavior. Here, in this study, we describe a membrane ion channel synapse (MICS), constructed from aqueous droplets linked by gramicidin A channels, that achieves neuromorphic functionality. MICS exhibits memristive ion transport with hysteretic current–voltage behavior arising from voltage-dependent channel formation and ion transport dynamics. MICS emulates a range of synaptic behaviors including associative learning. We further demonstrate its application in reservoir computing by performing handwritten digit classification and tic-tac-toe game and explore the system parameters that improve the computational performance. This droplet-based biomimetic synapse offers a potentially scalable and energy-efficient platform for next-generation neuromorphic computing systems.

Droplet interface bilayer↗
DOE OSTI2024

Heat Transport Hysteresis Generated Through Frequency Switching of a Time-Dependent Temperature Gradient

A stochastic energetics framework is applied to examine how periodically shifting the frequency of a time-dependent oscillating temperature gradient affects heat transport in a nanoscale molecular model. We specifically examine the effects that frequency switching, i.e., instantaneously changing the oscillation frequency of the temperature gradient, has on the shape of the heat transport hysteresis curves generated by a particle connected to two thermal baths, each with a temperature that is oscillating in time. Analytical expressions are derived for the energy fluxes in/out of the system and the baths, with excellent agreement observed between the analytical expressions and the results from nonequilibrium molecular dynamics simulations. We find that the shape of the heat transport hysteresis curves can be significantly altered by shifting the frequency between fast and slow oscillation regimes. We also observe the emergence of features in the hysteresis curves such as pinched loops and complex multi-loop patterns due to the frequency shifting. The presented results have implications in the design of thermal neuromorphic devices such as thermal memristors and thermal memcapacitors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Understanding and Tuning the Electronic Properties of Prussian Blue Analogues

Prussian blue analogues (PBAs) have attracted increasing interest owing to their potential applications in various fields such as energy storage and conversion, neuromorphic computing, and magnetic switching. With a general formula of A x M N [M C (CN) 6 ], they feature an open framework that provides abundant channels for diffusion of alkali metal ions A and allows flexible compositional control of transition metal ions M N and M C . The oxidation states of transition metal ions can be tuned by adjusting the amount (x) of alkali ions A. Here, we carried out density functional theory calculations combined with experimental measurements to investigate the effects of transition metal ions, alkali ions, and oxidation states on the electronic properties of PBAs. Our calculations found that the band gaps of PBAs can be tuned from close to 0 eV to more than 4 eV. Experimentally, we introduced the synthesis/characterization of five previously unreported PBAs (M N = Ru, Os; M C = Fe, Ru, and Os) to complete the nine stable M N :M C transition metal combinations in group VIII of the periodic table. The optically measured intervalence charge transfer excitation energies of group VIII PBAs are consistent with calculated band gaps. They demonstrate wide band gap tunability by adjusting transition metals and oxidation states, enabling semiconductor-to-metal transitions for memristor applications and enhancing electronic conductivity for battery applications. In conclusion, this work provides a computational/experimental database of electronic properties versus structural compositions for PBAs.

Electrical conductivity↗
DOE OSTI2025

Crystallization Mechanisms of Poly(vinylidene Fluoride- co -chlorotrifluoroethylene): Nucleation Transitions, Growth Kinetics, and Microstructure Evolution

The crystallization kinetics of FK-800, a commercial semicrystalline copolymer of chlorotrifluoroethylene and vinylidene fluoride (poly(CTFE-co-VDF)), dictate its microstructure and functional performance. Crystallization occurs between the glass transition (T g ≈ 31 °C) and melting point (T m ≈ 110 °C), with grain boundaries playing a key role in applications such as memristors, where they regulate filament growth. This study integrates in situ atomic force microscopy (AFM), grazing-incidence wide-angle X-ray scattering (GIWAXS), and differential scanning calorimetry (DSC) to characterize nucleation, growth, and morphology across the full crystallization window. Hot-stage AFM reveals a transition from homogeneous to heterogeneous nucleation near 45 °C and a shift from reaction-limited to diffusion-limited growth above 60 °C. Kinetics are analyzed using Lauritzen–Hoffman, Turnbull–Fisher, and Avrami models to extract surface free energies and activation barriers. A multiscale modeling framework is developed in which nucleation densities and growth rates measured by AFM are used to reconstruct Avrami kinetics, which are then validated against coverage data, and extrapolated to predict bulk crystallization behavior observed by DSC. GIWAXS confirms a primarily flat-on chain orientation at all temperatures, linking orientation to domain morphology. This integrative approach quantitatively connects nanoscale crystallization dynamics with macroscopic phase evolution, establishing a quantitative framework for modeling crystallization across time, temperature, and length scales.

Crystallization↗