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At least 19 records

A multiprocessor computer simulation model employing a feedback scheduler/allocator for memory space and bandwidth matching and TMR processing

A computer simulation model for a multiprocessor computer is developed that is useful for studying the problem of matching multiprocessor's memory space, memory bandwidth and numbers and speeds of processors with aggregate job set characteristics. The model assumes an input work load of a set of recurrent jobs. The model includes a feedback scheduler/allocator which attempts to improve system performance through higher memory bandwidth utilization by matching individual job requirements for space and bandwidth with space availability and estimates of bandwidth availability at the times of memory allocation. The simulation model includes provisions for specifying precedence relations among the jobs in a job set, and provisions for specifying precedence execution of TMR (Triple Modular Redundant and SIMPLEX (non redundant) jobs.

Bradley, D. B.↗

Quantum Search in Hilbert Space

A proposed quantum-computing algorithm would perform a search for an item of information in a database stored in a Hilbert-space memory structure. The algorithm is intended to make it possible to search relatively quickly through a large database under conditions in which available computing resources would otherwise be considered inadequate to perform such a task. The algorithm would apply, more specifically, to a relational database in which information would be stored in a set of N complex orthonormal vectors, each of N dimensions (where N can be exponentially large). Each vector would constitute one row of a unitary matrix, from which one would derive the Hamiltonian operator (and hence the evolutionary operator) of a quantum system. In other words, all the stored information would be mapped onto a unitary operator acting on a quantum state that would represent the item of information to be retrieved. Then one could exploit quantum parallelism: one could pose all search queries simultaneously by performing a quantum measurement on the system. In so doing, one would effectively solve the search problem in one computational step. One could exploit the direct- and inner-product decomposability of the unitary matrix to make the dimensionality of the memory space exponentially large by use of only linear resources. However, inasmuch as the necessary preprocessing (the mapping of the stored information into a Hilbert space) could be exponentially expensive, the proposed algorithm would likely be most beneficial in applications in which the resources available for preprocessing were much greater than those available for searching.

Zak, Michail↗

Implementation of Ferroelectric Memories for Space Applications

Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.

Philpy, Stephen C.↗

Future Development of Dense Ferroelectric Memories for Space Applications

The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

Philpy, Stephen C.↗

On Nibbles and Bytes: The Conundrum of Memory for Space Systems - NASA Electronic Parts and Packaging (NEPP) and Efforts in Memories

Radiation requirements and trends. TID: 1) >90% of NASA applications are < 100 krads-Si in piecepart requirements. a) Many commercial devices (NVM and SDRAMs) meet or come close to this. b) Charge pump TID tolerance has improved an order magnitude over the last 10 years. 2) There are always a few programs with higher level needs and, of course, defense needs SEL: 1) Prefer none or rates that are considered low risk. a) Latent damage is a bear to deal with. 2) As we re packing cells tighter and even with lower Vdd, we re seeing SEL on commercial devices regularly (<90nm). a) Often in power conversion, I/O, or control areas. SEU: 1) It s not the bit errors, it s the SEFIs errors that are the biggest issues. a) Scrubbing concerns for risk, power, speed.

LaBel, Kenneth A.↗

Proton upsets in LSI memories in space

Two types of large scale integrated dynamic random access memory devices were tested and found to be subject to soft errors when exposed to protons incident at energies between 18 and 130 MeV. These errors are shown to differ significantly from those induced in the same devices by alphas from an Am-241 source. There is considerable variation among devices in their sensitivity to proton-induced soft errors, even among devices of the same type. For protons incident at 130 MeV, the soft error cross sections measured in these experiments varied from 10 to the -8th to 10 to the -6th sq cm/proton. For individual devices, however, the soft error cross section consistently increased with beam energy from 18-130 MeV. Analysis indicates that the soft errors induced by energetic protons result from spallation interactions between the incident protons and the nuclei of the atoms comprising the device. Because energetic protons are the most numerous of both the galactic and solar cosmic rays and form the inner radiation belt, proton-induced soft errors have potentially serious implications for many electronic systems flown in space.

Mcnulty, P. J.↗

SEU evaluation of FeRAM memories for space applications

SEU cross-sections were obtained for two different FeRAM memories: The 64 kbit and 256 kbit Ramtron FeRAM and the Hynix 64 kbit device. The devices were seen to have latch-up characteristics typical of commercial CMOS. Also, errors in the memory were also seen from heavy ion irradiation.

SEU FeRAM ion irradiation↗

Orthogonal patterns in binary neural networks

A binary neural network that stores only mutually orthogonal patterns is shown to converge, when probed by any pattern, to a pattern in the memory space, i.e., the space spanned by the stored patterns. The latter are shown to be the only members of the memory space under a certain coding condition, which allows maximum storage of M=(2N) sup 0.5 patterns, where N is the number of neurons. The stored patterns are shown to have basins of attraction of radius N/(2M), within which errors are corrected with probability 1 in a single update cycle. When the probe falls outside these regions, the error correction capability can still be increased to 1 by repeatedly running the network with the same probe.

Baram, Yoram↗

Freeing Space for NASA: Incorporating a Lossless Compression Algorithm into NASA's FOSS System

NASA's Fiber Optic Strain Sensing (FOSS) system can gather and store up to 1,536,000 bytes (1.46 megabytes) per second. Since the FOSS system typically acquires hours - or even days - of data, the system can gather hundreds of gigabytes of data for a given test event. To store such large quantities of data more effectively, NASA is modifying a Lempel-Ziv-Oberhumer (LZO) lossless data compression program to compress data as it is being acquired in real time. After proving that the algorithm is capable of compressing the data from the FOSS system, the LZO program will be modified and incorporated into the FOSS system. Implementing an LZO compression algorithm will instantly free up memory space without compromising any data obtained. With the availability of memory space, the FOSS system can be used more efficiently on test specimens, such as Unmanned Aerial Vehicles (UAVs) that can be in flight for days. By integrating the compression algorithm, the FOSS system can continue gathering data, even on longer flights.

Fiechtner, Kaitlyn↗

Radiation Performance of Memory Technologies for Space Applications

MRAM and DRAM memory technologies identified for possible radiation hardening were investigated for memory-array- and controller-level radiation sensitivity. TID and SEE performance of memory arrays and associated cells is good, but with some questions about viability of hardening of problematic control circuitry. Control-circuitry-related SEE problems are highlighted. TID data are focused on memory arrays only.

Some, Raphael↗