Magnetocaloric, thermal, and magnetotransport properties of Ni50Mn35In13.9B1.1 Heusler alloy
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Pandey, Sudip↗
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Magnetotransport in La0.7Sr0.3MnO3/CuCr2O4/Fe3O4 magnetic junctions
Not Available
Iwata-Harms, Jodi M.↗
Magnetotransport and magnetic textures in Ho/FeCoGd/ β -W multilayers
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99 GENERAL AND MISCELLANEOUS↗
Out-of-plane spin-orientation dependent magnetotransport properties in the anisotropic helimagnet CR 1/3 NbS 2 [Spin-Orbit Coupling Induced Anisotropy in the Magnetotransport of the Chiral Helimagnet Cr1=3NbS2]
Understanding the role of spin-orbit coupling (SOC) has been crucial for controlling magnetic anisotropy in magnetic multilayer films. It has been shown that electronic structure can be altered via interface SOC by varying the superlattice structure, resulting in spontaneous magnetization perpendicular or parallel to the plane. In lieu of magnetic thin films, we study the similarly anisotropic helimagnet Cr1/3NbS2 where the spin-polarization direction, controlled by the applied magnetic field, can modify the electronic structure. As a result, the direction of spin polarization can modulate the density of states and in turn affect the in-plane electrical conductivity. In Cr1/3NbS2, we found an enhancement of in-plane conductivity when the spin polarization is out-of-plane as compared to in-plane spin polarization. This is consistent with the increase in density of states near the Fermi energy at the same spin configuration, found from first-principles calculations. We also observe unusual field dependence of the Hall signal in the same temperature range. This is unlikely to originate from the noncollinear spin texture but rather further indicates strong dependence of electronic structure on spin orientation relative to the plane.
74 ATOMIC AND MOLECULAR PHYSICS↗
Magnetotransport properties of the single-crystalline nodal-line semimetal candidates Ca T X ( T = Ag , Cd ; X = As , Ge )
Not Available
Emmanouilidou, Eve↗
Temperature-induced anomalous magnetotransport in the Weyl semimetal Mn 3 Ge
The magnetic Weyl semimetallic state can lead to intriguing magnetotransport, such as chiral anomaly and the layered quantum Hall effect. Mn3X (X = Sn, Ge) is a noncollinear antiferromagnetic semimetal where a Weyl semimetallic state is stabilized by time-reversal symmetry breaking. Compared to the well-studied Mn3Sn, the Weyl fermion-induced magnetotransport in Mn3Ge has been merely studied. Here, we report an in-depth study on the magnetotransport in a microfabricated Mn3Ge single crystal from room temperature to 10 K. We reveal an anomalous anisotropic magnetoresistance with fourfold symmetry and a positive high-field longitudinal magnetoresistance below the critical temperature (160–170 K). The possible origin is the temperature-induced tilting of the Weyl nodes. Our study helps to understand the magnetotransport properties in the Weyl fermion system.
36 MATERIALS SCIENCE↗
Origin of anomalous magnetotransport in kagome superconductors 𝐴V 3 Sb 5 (𝐴 = K,Rb,Cs)
Multiple anomalous features in electronic spectra of metals with a kagome lattice structure—van Hove singularities, Dirac points, and flat bands—imply that materials containing this structural motif may lie at a nexus of topological and correlated electron physics. Due to the prospects of such exceptional electronic behavior, the recent discovery of superconductivity coexisting with charge-density wave (CDW) order in the layered kagome metals 𝐴V 3 Sb 5 (𝐴 = K,Rb,Cs) has attracted considerable attention. Notably, these archetypal kagome metals express unconventional magnetotransport behavior, including an unexpected linear-in-𝐻 diagonal resistivity at low fields, and an even more peculiar, nonmonotonic sign-changing behavior of the Hall resistivity, which has been speculated to arise from a chiral CDW. We argue here that this unusual magnetotransport derives not from such unconventional phenomena, but rather from the unique fermiology of the 𝐴V 3 Sb 5 materials. Specifically, it is caused by a large, concave hexagonal Fermi surface sheet formed in the close proximity to the van Hove singularities, which is backfolded into a small hexagonal sheet and two large triangular sheets in the CDW state. We introduce and analyze a model of the electronic structure of these Fermi surface sheets that allows for a full analytical treatment within Boltzmann kinetic theory and that enables semi-quantitative fits of our transport data. Specifically, we find that the anomalous magnetotransport behavior is caused by the confluence of strong reduction of the Fermi velocity near the van Hove singularities located near the vertices of the hexagonal sheet and sharp corners in Fermi surface generated by the CDW reconstruction. In conclusion, our analytical approach not only explains the anomalous magnetotransport in the kagome superconductors but also can be extended to a variety of metallic systems hosting singular features in their Fermi surfaces.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Reconfigurable Magnetotransport in MnBi 2 Te 4 via Gate and Magnetic Field Tuning
The intrinsic magnetic topological insulator MnBi 2 Te 4 is a promising platform for exploring quantum phases with nontrivial band topology and for enabling electrical control over coupled magnetic and electronic phase transitions. In-plane magnetic fields, in particular, offer a distinct means of tuning these properties by strengthening quantized Hall effects, enhancing surface energy gaps, and driving spin reorientation transitions. However, a systematic understanding of how such fields affect magnetotransport is limited. Here, the magnetotransport behavior of few-layer MnBi 2 Te 4 as a function of gate voltage, temperature, and magnetic field angle, with a primary focus on in-plane field effects, are investigated. A gate-tunable crossover in magnetoresistance is observed from positive to negative values under in-plane magnetic fields as the gate voltage is swept below the charge neutrality point at temperatures below the Néel temperature. The in-plane field drives a transition from the antiferromagnetic ground state to a ferromagnetic configuration with spins aligned in-plane, while simultaneously altering the electronic structure, as revealed by gate-dependent transport features. The angle-dependent measurements reveal strongly gate-tunable magnetotransport anisotropy. These results establish in-plane magnetic fields as an effective tuning parameter for modulating spin and charge transport in MnBi 2 Te 4 , advancing prospects for reconfigurable spintronic and topological devices.
MnBi 2 Te 4↗
Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays
The effect of antiferromagnetic (AFM) layer on exchange bias (EB), training effect, and magnetotransport properties in ferromagnetic (FM) /AFM nanoscale antidot arrays and sheet films Ag(10 nm)/Co(8 nm)/NiO(t{sub NiO})/Ag(5 nm) at 10 K is studied. The AFM layer thickness dependence of the EB field shows a peak at t{sub NiO} = 2 nm that is explained by using the random field model. The misalignment of magnetic moments in the three-dimensional antidot arrays causes smaller decrease of EB field compared with that in the sheet films for training effect. The anomalous magnetotransport properties, in particular positive magnetoresistance (MR) for antidot arrays but negative MR for sheet films are found. The training effect and magnetotransport properties are strongly affected by the three-dimensional spin-alignment effects in the antidot arrays.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Magnetotransport and electronic structure of the antiferromagnetic semimetal YbAs
A number of rare-earth monopnictides have topologically nontrivial band structures together with magnetism and strong electronic correlations. In order to examine whether the antiferromagnetic (AFM) semimetal YbAs (TN=0.5 K) exhibits such a scenario, we have grown high-quality single crystals using a flux method, and characterized the magnetic properties and electronic structure using specific heat, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) measurements, together with density functional theory (DFT) calculations. Both ARPES and DFT calculations find no evidence for band inversions in YbAs, indicating a topologically trivial electronic structure. From low-temperature magnetotransport measurements, we map the field-temperature phase diagram, where we find the presence of a field stabilized phase distinct from the AFM phase at low temperatures. Additionally, an extremely large magnetoresistance (XMR) for both YbAs and the nonmagnetic counterpart LuAs is also observed, which can consistently be accounted for by the presence of electron-hole compensation. Moreover, an angle-dependent study of the Shubnikov-de Haas effect oscillations reveals very similar Fermi surfaces between YbAs and LuAs, with light effective masses down to at least 0.5 K, indicating that the Yb-4f electrons are well localized, and do not contribute to the Fermi surface. However, the influence of the localized Yb-4f electrons on the magnetotransport of YbAs can be discerned from the distinct temperature dependence of the XMR compared to that of LuAs, which we attribute to the influence of short-ranged spin correlations that appear well above TN.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Experimental correlation between nonlinear optical and magnetotransport properties observed in Au-Co thin films
Magnetic materials where at least one dimension is in the nanometer scale typically exhibit different magnetic, magnetotransport, and magnetooptical properties compared to bulk materials. Composite magnetic thin films where the matrix composition, magnetic cluster size, and overall composite film thickness can be experimentally tailored via adequate processing or growth parameters offer a viable nanoscale platform to investigate possible correlations between nonlinear magnetooptical and magnetotransport properties, since both types of properties are sensitive to the local magnetization landscape. As a result, it has been shown that the local magnetization contrast affects the nonlinear magnetooptical properties as well as the magnetotransport properties in magnetic-metal/nonmagnetic metal multilayers; thus, nanocomposite films showcase another path to investigate possible correlations between these distinct properties which may prove useful for sensing applications.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Unusual magnetotransport in twisted bilayer graphene from strain-induced open Fermi surfaces
Anisotropic hopping in a toy Hofstadter model was recently invoked to explain a rich and surprising Landau spectrum measured in twisted bilayer graphene away from the magic angle. Suspecting that such anisotropy could arise from unintended uniaxial strain, we extend the Bistritzer–MacDonald model to include uniaxial heterostrain and present a detailed analysis of its impact on band structure and magnetotransport. We find that such strain strongly influences band structure, shifting the three otherwise-degenerate van Hove points to different energies. Coupled to a Boltzmann magnetotransport calculation, this reproduces previously unexplained nonsaturating B 2 magnetoresistance over broad ranges of density near filling ν = ± 2 and predicts subtler features that had not been noticed in the experimental data. In contrast to these distinctive signatures in longitudinal resistivity, the Hall coefficient is barely influenced by strain, to the extent that it still shows a single sign change on each side of the charge neutrality point—surprisingly, this sign change no longer occurs at a van Hove point. The theory also predicts a marked rotation of the electrical transport principal axes as a function of filling even for fixed strain and for rigid bands. More careful examination of interaction-induced nematic order versus strain effects in twisted bilayer graphene could thus be in order.
36 MATERIALS SCIENCE↗
Magnetotransport in semiconductors and two-dimensional materials from first principles
Here we demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility, and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consistent with experiments. Analysis of the steady-state electron occupations in graphene shows the dominant role of optical phonon scattering and the breaking of the relaxation time approximation. Our paper provides a detailed understanding of the microscopic mechanisms governing magnetotransport coefficients, establishing the BTE in a magnetic field as a broadly applicable first-principles tool to investigate transport in semiconductors and 2D materials.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Magnetotransport of Sm 2 Ir 2 O 7 across the pressure-induced quantum-critical phase boundary
Rare-earth pyrochlore iridates host two interlocking magnetic sublattices of corner-sharing tetrahedra and can harbour a unique combination of frustrated moments, exotic excitations and highly correlated electrons. They are also the first systems predicted to display both topological Weyl semimetal and axion insulator phases. We have measured the transport and magnetotransport properties of single-crystal Sm 2 Ir 2 O 7 up to and beyond the pressure-induced quantum critical point for all-in-all-out (AIAO) Ir order at p c = 63 kbar previously identified by resonant X-ray scattering and close to which Weyl semimetallic behavior has been previously predicted. Our findings overturn the accepted expectation that the suppression of AIAO order should lead to metallic conduction persisting down to zero temperature. Instead, the resistivity-minimum temperature, which tracks the decrease in the AIAO ordering temperature for pressures up to 30 kbar, begins to increase under further application of pressure, pointing to the presence of a second as-yet unidentified mechanism leading to non-metallic behavior. The magnetotransport does track the suppression of Ir magnetism, however, with a strong hysteresis observed only within the AIAO phase boundary, similar to that found for Ho 2 Ir 2 O 7 and attributed to plastic deformation of Ir domains. Around pc we find the emergence of a new type of electronic phase, characterized by a negative magnetoresistance with small hysteresis at the lowest temperatures, and hysteresis-free positive magnetoresistance above approximately 5K. The temperature dependence of our low-temperature transport data are found to be best described by a model consistent with a Weyl semimetal across the entire pressure range.
36 MATERIALS SCIENCE↗
Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices
Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Magnetotransport of multiple-band nearly antiferromagnetic metals due to hot-spot scattering
Multiple-band electronic structure and proximity to antiferromagnetic (AF) instability are the key properties of iron-based superconductors. In this paper, we explore the influence of scattering by the AF spin fluctuations on transport of multiple-band metals above the magnetic transition. A salient feature of scattering on the AF fluctuations is that it is strongly enhanced at the Fermi surface locations where the nesting is perfect (“hot spots” or “hot lines”). We review derivation of the collision integral for the Boltzmann equation due to AF-fluctuations scattering. In the paramagnetic state, the enhanced scattering rate near the hot lines leads to anomalous behavior of electronic transport in magnetic field. We explore this behavior by analytically solving the Boltzmann transport equation with approximate transition rates. This approach accounts for return scattering events and is more accurate than the relaxation-time approximation. The magnetic-field dependences are characterized by two very different field scales: the lower scale is set by the hot-spot width and the higher scale is set by the total scattering amplitude. A conventional magnetotransport behavior is limited to magnetic fields below the lower scale. In the wide range in-between these two scales, the longitudinal conductivity has linear dependence on the magnetic field and the Hall conductivity has quadratic dependence. The linear dependence of the diagonal component reflects growth of the Fermi-surface area affected by the hot spots proportional to the magnetic field. Finally, we discuss applicability of this theoretical framework for describing of anomalous magnetotransport properties in different iron pnictides and chalcogenides in the paramagnetic state.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Role of structure imperfection in the formation of the magnetotransport properties of rare-earth manganites with a perovskite structure
The structure, the structure imperfection, and the magnetoresistance, magnetotransport, and microstructure properties of rare-earth perovskite La{sub 0.3}Ln{sub 0.3}Sr{sub 0.3}Mn{sub 1.1}O{sub 3–δ} manganites are studied by X-ray diffraction, thermogravimetry, electrical resistivity measurement, magnetic, {sup 55}Mn NMR, magnetoresistance measurement, and scanning electron microscopy. It is found that the structure imperfection increases, and the symmetry of a rhombohedrally distorted R3̅c perovskite structure changes into its pseudocubic type during isovalent substitution for Ln = La{sup 3+}, Pr{sup 3+}, Nd{sup 3+}, Sm{sup 3+}, or Eu{sup 3+} when the ionic radius of an A cation decreases. Defect molar formulas are determined for a real perovskite structure, which contains anion and cation vacancies. The decrease in the temperatures of the metal–semiconductor (T{sub ms}) and ferromagnet–paramagnet (T{sub C}) phase transitions and the increase in electrical resistivity ρ and activation energy E{sub a} with increasing serial number of Ln are caused by an increase in the concentration of vacancy point defects, which weaken the double exchange 3d{sup 4}(Mn{sup 3+})–2p{sup 6}(O{sup 2–})–3d{sup 3}(Mn{sup 4+})–V{sup (a)}–3d{sup 4}(Mn{sup 3+}). The crystal structure of the compositions with Ln = La contains nanostructured planar clusters, which induce an anomalous magnetic hysteresis at T = 77 K. Broad and asymmetric {sup 55}Mn NMR spectra support the high-frequency electronic double exchange Mn{sup 3+}(3d{sup 4}) ↔ O{sup 2–}(2p{sup 6}) ↔ Mn{sup 4+}(3d{sup 3}) and indicate a heterogeneous surrounding of manganese by other ions and vacancies. A correlation is revealed between the tunneling magnetoresistance effect and the crystallite size. A composition–structure imperfection–property experimental phase diagram is plotted. This diagram supports the conclusion about a strong influence of structure imperfection on the formation of the magnetic, magnetotransport, and magnetoresistance properties of rare-earth perovskite manganites.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗