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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I dc . Lastly, the results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tuning the electronic and the crystalline structure of LaBi by pressure: From extreme magnetoresistance to superconductivity

Here, extreme magnetoresistance (XMR) in topological semimetals is a recent discovery which attracts attention due to its robust appearance in a growing number of materials. To search for a relation between XMR and superconductivity, we study the effect of pressure on LaBi. By increasing pressure, we observe the disappearance of XMR followed by the appearance of superconductivity at P ≈ 3.5 GPa. We find a region of coexistence between superconductivity and XMR in LaBi in contrast to other superconducting XMR materials. The suppression of XMR is correlated with increasing zero-field resistance instead of decreasing in-field resistance. At higher pressures, P ≈ 11 GPa, we find a structural transition from the face-centered cubic lattice to a primitive tetragonal lattice, in agreement with theoretical predictions. The relationship between extreme magnetoresistance, superconductivity, and structural transition in LaBi is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Anisotropic magnetoresistance and nontrivial spin Hall magnetoresistance in Pt / α – F e 2 O 3 bilayers

Magnetic proximity effect has only been conclusively observed in ferromagnet-based systems. We report the observation of anomalous Hall effect and angular-dependent anisotropic magnetoresistance in Pt on antiferromagnetic Pt / α – F e 2 O 3 (0001) epitaxial films at 10 K, which provide evidence for the magnetic proximity effect. The Neel order of Pt / α – F e 2 O 3 and the induced magnetization in Pt show a unique angular-dependent magnetoresistance compared with all other ferromagnetic and antiferromagnetic systems. In conclusion, a macrospin response model is established and can explain the antiferromagnetic spin configuration and all main magnetoresistance features in the Pt / α – F e 2 O 3 bilayers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Atomic Scale Studies of La/Sr Ordering in Colossal Magnetoresistant La 2-2x Sr 1+2x Mn 2 O 7 Single Crystals

To date, it is unclear whether chemical order (or disorder) is in any way connected to double exchange, electronic phase separation, or charge ordering (CO) in manganites. In this work, we carry out an atomic resolution study of the colossal magnetoresistant manganite La 2-2x Sr 1+2x Mn 2 O 7 (LSMO). We combine aberration-corrected electron microscopy and spectroscopy with spectroscopic image simulations, to analyze cation ordering at the atomic scale in real space in a number of LSMO single crystals. We compare three different compositions within the phase diagram: a ferromagnetic metallic material (x=0.36), an insulating, antiferromagnetic charge ordered (AF-CO) compound (x=0.5), which also exhibits orbital ordering, and an additional AF sample (x=0.56). Detailed image simulations are essential to accurately quantify the degree of chemical ordering of these samples. We find a significant degree of long-range chemical ordering in all cases, which increases in the AF-CO range. However, the degree of ordering is never complete nor can it explain the strongly correlated underlying ordering phenomena. Our results show that chemical ordering over distinct crystallographic sites is not needed for electronic ordering phenomena to appear in manganites, and cannot by itself explain the complex electronic behavior of LSMO.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO{sub 3}/SrTiO{sub 3} heterostructures

A LaCoO{sub 3}/SrTiO{sub 3} heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO{sub 3}, leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO{sub 3} layer on strain. Below the Curie temperature of the LaCoO{sub 3} layer, this effect leads to modulation of resistance in LaCoO{sub 3} as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO{sub 3}. Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO{sub 3} layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO{sub 3} grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Magnetoresistance of Au films

Classical magnetoresistance (MR) in nonmagnetic metals are conventionally understood in terms of the Kohler rule, with violation usually viewed as anomalous electron transport, in particular, as evidence of non-Fermi liquid behavior. Measurement of the MR of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms. Consequently, the Kohler rule should not be used to distinguish normal and anomalous electron transport in solids.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Anisotropic magnetoresistance and current-perpendicular-to-plane giant magnetoresistance in epitaxial NiMnSb-based multilayers

We fabricated (001)-oriented C1{sub b}-NiMnSb epitaxial films on MgO substrate by a magnetron sputtering system and systematically investigated the structure, magnetic property, and anisotropic magnetoresistance (AMR) effect. NiMnSb film was deposited using a stoichiometric NiMnSb target which has Mn-deficient (Mn ∼ 28.7 at. %) off-stoichiometric composition ratio. We have investigated bulk spin-polarization in NiMnSb films by measuring AMR on the basis of recent study for half-metallic L2{sub 1}-Heusler compounds. Although the negative sign of AMR ratio, which is indicative of half-metallic nature, was observed in the single layer NiMnSb films, the magnitude of AMR ratio (−0.10% at RT) was about half of the largest value reported for half-metallic L2{sub 1}-Heusler compounds. The current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) devices of NiMnSb/Ag/NiMnSb show MR ratio of 13.2% at 10 K and 4.2% at 300 K, which is higher than the previous result for NiMnSb/Cu/NiMnSb CPP-GMR devices [Caballero et al., J. Magn. Magn. Mater. 198–199, 55 (1999)], but much less than the CPP-GMR using L2{sub 1}-Heusler electrodes. The reduction of intrinsic bulk spin-polarization originating from the Mn-deficiency in NiMnSb layer is expected to be the main reason for small MR values.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Microwave Giant Magnetoresistance in [CoFe/Cu]{sub n} Superlattices with Record-High Magnetoresistance

Microwave giant magnetoresistance in [CoFe/Cu]{sub n} nanostructures is studied in the millimeter-wave range. Measurements are preformed for superlattices with the maximum magnetoresistive effect. The field dependences of transmission and reflection coefficients are determined. Record-high (up to 80%) variations of the transmission coefficient are obtained.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd 3 [Oscillating magnetoresistance due to fragile spin structure in metallic GdPd 3 ]

Here, studies on the phenomenon of magnetoresistance (MR) have produced intriguing and application-oriented outcomes for decades–colossal MR, giant MR and recently discovered extremely large MR of millions of percents in semimetals can be taken as examples. We report here the discovery of novel multiple sign changes versus applied magnetic field of the MR in the cubic intermetallic compound GdPd 3 . Our study shows that a very strong correlation between magnetic, electrical and magnetotransport properties is present in this compound. The magnetic structure in GdPd 3 is highly fragile since applied magnetic fields of moderate strength significantly alter the spin arrangement within the system–a behavior that manifests itself in the oscillating MR. Intriguing magnetotransport characteristics of GdPd 3 are appealing for field-sensitive device applications, especially if the MR oscillation could materialize at higher temperature by manipulating the magnetic interaction through perturbations caused by chemical substitutions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Intrinsic Mechanism for Anisotropic Magnetoresistance and Experimental Confirmation in Co{sub x}Fe{sub 1-x} Single-Crystal Fims.

Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal CoxFe1-x alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special k points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.

Zeng, F. L.↗
DOE OSTI2016

Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

Here, we report a direct and real time measurement of photoinduced structure phase transition in single crystal La 0.84 Sr 0.16 MnO 3 using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. Furthermore, the fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion following the photo-excitation. We attribute the slow process to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗