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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Low temperature dry reforming of methane using Ru-Ni-Mg/ceria-zirconia catalysts: Effect of Ru loading and reduction temperature

Dry reforming catalysts, especially those with activity at moderate temperatures, have been intensely investigated to enhance the conversion of biogas. Here, Ru is evaluated as a promoter for Ni-Mg based catalysts. Catalysts based on 1.4 wt%Ni-1.0 wt%Mg-Ce 0.6 Zr 0.4 O 2 with Ru (0.02–0.32 wt%) were prepared using incipient wetness. The reducibility of the catalysts and conversions increased with increasing Ru content. Increases in conversions with increasing Ru loading was attributed to the additional active sites and synergistic effect between Ru and Ni, which weakened Ni-Mg interactions. Samples showed dry reforming activity at low temperatures (450–510 °C). Reaction rates and activation energies of higher loading Ru samples (1.4 wt%Ni-1.0 wt%Mg/Ce 0.6 Zr 0.4 O 2 with 0.16 and 0.32 wt%Ru) decreased when the reduction temperature was raised from 300 to 400 °C. A 20 h TOS study showed stable catalytic activity with minimal coke deposition. Furthermore, the results suggest that Ru is an alternative to Pt in promoting low temperature dry reforming of methane.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1984

Si MOS devices at low temperatures

Low temperature operation of micron and submicron size Si MOSFETs (metal-oxide-semiconductor field-effect-transistors) results in their improved device characteristics. Various low temperature device properties such as increase in mobility, shift in the theshold voltage, increased reliability, etc., were considered. Other device characteristics such as the subthreshold behavior, delay times and miniaturization at low temperatures are discussed. Discussion includes presenting experimental results along with physical models explaining the observed effects.

Kamgar, A.↗
NASA NTRS1972

Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.

Kirkpatrick, A. R.↗
NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the "flat-spot" (FS) power loss phenomenon observed in silicon solar cells operating deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallurization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗
NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the 'flat-spot' power-loss phenomenon observed in silicon solar cells operating under deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗
DOE OSTI2023

Mainstream nitrogen removal from low temperature and low ammonium strength municipal wastewater using hydrogel-encapsulated comammox and anammox

Application of partial nitritation (PN)-anammox to mainstream wastewater treatment faces challenges in low water temperature and low ammonium strength. In this study, a continuous flow PN-anammox reactor with hydrogel-encapsulated comammox and anammox was designed and operated for nitrogen removal from mainstream wastewater with low temperature. Long-term operation with synthetic and real wastewater as the feed demonstrated nearly complete ammonium and total inorganic nitrogen (TIN) removal by the reactor at temperatures as low as 10 °C. A significantly decreased nitrogen removal performance and biomass activity was observed in the reactor at 4 °C before a selective heating strategy was employed. A novel heating technology using radiation to heat carbon black co-encapsulated in the hydrogel matrix with biomass was used to selectively heat biomass but not water in the treatment system. This selective heating technology enabled nearly complete ammonium removal and 89.4 ± 4.3 % TIN removal at influent temperature of 4 °C and reactor temperature 5 °C. Activity tests suggested selective heating brought the biomass activity at influent temperatures of 4 °C and reactor temperature 5 °C to a level comparable to that at 10 °C. Comammox and anammox were consistently present in the system and spatially organized in the hydrogel beads as revealed by qPCR and fluorescence in-situ hybridization (FISH). The abundance of comammox largely decreased by 3 orders of magnitude during the operation at 4 °C, and rapidly recovered after the application of selective heating. The anammox-comammox technology tested in this study essentially enabled mainstream shortcut nitrogen removal, and the selective heating ensured good performance of the technology at temperature as low as 5 °C.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS1994

Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

Pan, Chenyu↗
NASA NTRS1976

Measurement of ozone transmissivity at low temperatures

Low temperature medium resolution measurements of the transmissivity of the ozone band have been made in the laboratory. The range of conditions under which the measurements were made are: -48 to -22 C, .0029 U .71 atmo.cm., 680 P 742 mmHg. The apparatus used is described briefly, measurement conditions are summarized and the resulting spectra are shown.

Bartman, F. L.↗
NASA NTRS2003

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Elbuluk, Malik E.↗
NASA NTRS1981

Performance of candidate SEPS solar cells as a function of low temperature and low intensity exposure and 1 MeV electron irradiation

The behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.

Whitaker, A. F.↗
NASA NTRS2010

Ultra Low Temperature Ultra Low Power Instrument Packages for Planetary Surfaces

Achievement of solar system exploration roadmap goals will involve robotic or human deployment and longterm operation of surface science packages remote from human presence, thus requiring autonomous, self-powered operation. The major challenge such packages face will be operating during long periods of darkness in extreme cold potentially without the Pu238 based power and thermal systems available to Apollo era packages (ALSEP). Development of such science payloads will thus require considerable optimization of instrument and subsystem design, packaging and integration for a variety of planetary surface environments in order to support solar system exploration fully. Our work supports this process through the incorporation of low temperature operational components and design strategies which radically minimize power, mass, and cost while maximizing the performance under extreme surface conditions that are in many cases more demanding than those routinely experienced by spacecraft in deep space. Chief instruments/instrument package candidates include those which could provide long-term monitoring of the surface and subsurface environments for fundamental science and human crew safety. The initial attempt to design a 10 instrument environmental monitoring package with a solar/battery based power system led to a package with a unacceptably large mass (500 kg) of which over half was battery mass. In phase 1, a factor of 5 reduction in mass was achieved, first through the introduction of high performance electronics capable of operating at far lower temperature and then through the use of innovative thermal balance strategies involving the use of multi-layer thin materials and gravity-assisted heat pipes. In phase 2, reported here, involves strategies such as universal incorporation of ULT/ULP digital and analog electronics, and distributed or non-conventionally packaged power systems. These strategies will be required to meet the far more challenging thermal requirements of operating through a normal 28 day diurnal cycle. The limited temperature range of efficient battery operation remains the largest obstacle.

Clark, P. E.↗
NASA NTRS1983

Silicon solar cell characterization at low temperatures and low illumination as a function of particulate irradiation

Various configurations of back surface reflector silicon solar cells including small (2 x 2) cm and large (approx. 6 x 6) cm cells with conventional and wraparound contacts were subjected to 1 MeV electron irradiation and characterized under both Earth orbital and deep space conditions of temperatures and illuminations. Current-Voltage (I-V) data were generated from +65 C to -150 C and at incident illuminations from 135.3 mW/sq cm to 5.4 mW/sq cm for these cells. Degradation in cell performance which is manifested only under deep space conditions is emphasized. In addition, the effect of particle irradiation on the high temperature and high intensity and low temperature and low intensity performance of the cells is described. The cells with wraparound contacts were found to have lower efficiencies at Earth orbital conditions than the cells with conventional contacts.

Whitaker, A. F.↗