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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Cybersecurity Challenges in Low-Inertia Power-Electronics-Dominated Grids

Here, the low inertia characteristics of the power electronics dominated grid (PEDG) introduces challenges while restoring voltage and frequency to their nominal values. These stability challenges create new cybersecurity vulnerabilities that are not thoroughly discussed in the literature. Cyber events such as false data injection (FDI), denial of service (DoS), man-in-the-middle attacks, stealthy attacks, and advanced persistent threats target PEDG to disrupt grid stability or gain financial benefits. The low inertia of PEDG (< 2s) compared to traditional grids (~10s) exacerbates these vulnerabilities. In response to stealthy attacks on state variables that supervisory layers cannot detect until significant harm occurs, the low inertia characteristics of PEDG offer substantial stealthy attack surfaces. To counteract such threats, PEDG must be equipped with ultra-fast real-time anomaly detection system and trajectory prediction mechanism to achieve effective cyberattack resiliency.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

AOI [1] Advanced Manufacturing of Ceramic Anchors with Embedded Sensors for Process and Health Monitoring of Coal Boilers

Researchers at West Virginia University (WVU) developed methods to fabricate and test ceramic anchors with an embedded sensor technology for monitoring the health and processing conditions within pulverized coal (PC) and fluidized-bed combustion (FBC) boiler systems. The technology included the development of advanced manufacturing processes for 2D/3D printing electroceramic (conductive ceramic) sensor designs within the ceramic anchor microstructure during the manufacturing process. This advanced manufacturing process would allow for the precise control of local microstructure and composition in order to engineer layer-by-layer any protective and electrically active materials within the refractory anchor. This 3D printing technology would permit the rapid and controlled design of the refractory microstructure and embedded sensor design throughout the volume of the ceramic anchor. The work also included a method to interconnect the sensors to boiler shell through the anchor clamp, where the sensor signals will be processed by low-power electronics and transmitted wirelessly to a central processing hub. The end-goal of the program was to produce a ceramic anchor sensor system which would be ready for implementation within a coal boiler, and/or other similar refractory liner systems (such as that in the glass and metal manufacturing areas). The project objectives were to: 1) Define the chemical and microstructural stability, in addition to the electrical properties, of oxide and non-oxide ceramic composites to be embedded within the ceramic anchor compositions that may operate up to 1400ºC; 2) Develop and implement the 2D/3D printing technology to pattern and control the microstructure of the ceramic anchor and embedded sensor circuits; 3) Develop an interconnect technology which will permit easy installation of the ceramic anchors and signal collection at the boiler shell; 4) Develop low power analog electronics and wireless communication hardware to efficiently collect the sensor signal at each processing unit and transmit data to a central hub for data analysis; 5) Demonstrate the smart ceramic anchor system for temperature and liner fracture within a high-temperature processing unit, such as a boiler furnace or glass melting furnace floor/wall liner.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2022

First High-Gradient Results of UED/UEM SRF Gun at Cryogenic Temperatures

Benefiting from the rapid progress on RF photogun technologies in the past two decades, the development of MeV range ultrafast electron diffraction/microscopy (UED and UEM) has been identified as an enabling instrumentation. UEM or UED use low power electron beams with modest energies of a few MeV to study ultrafast phenomena in a variety of novel and exotic materials. SRF photoguns become a promising candidate to produce highly stable electrons for UEM/UED applications because of the ultrahigh shot-to-shot stability compared to room temperature RF photoguns. SRF technology was prohibitively expensive for industrial use until two recent advancements: Nb₃Sn and conduction cooling. The use of Nb₃Sn allows to operate SRF cavities at higher temperatures (4K) with low power dissipation which is within the reach of commercially available closed-cycle cryocoolers. Euclid is developing a continuous wave (CW), 1.5-cell, MeV-scale SRF conduction cooled photogun operating at 1.3 GHz. In this paper, we present first high gradient results of the gun conducted in liquid helium.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Low-power anisotropic molecular electronic memristors

A molecular electronic memristor, programmable resistive memory device, promises to revolutionize next-generation flexible data storage units, offering fast, dense and ultralow power solutions. Here we report anisotropic resistive switching in molecular κ-(BEDT-TTF) 2 Cu[N(CN) 2 ]Cl memristors, consisting of alternatively segregated bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and Cu[N(CN) 2 ]Cl layers. Electron resistance switching behavior controlled by charge tunneling in molecular memristors show a low set voltage of 0.5 V (10 V/cm) with the ON/OFF ratio of 2.3×10 3 along a-axis and a high-level endurance of 1.25×10 4 cycles along all axes. Finally, the findings of such molecular electronic crystals promise for low-power data storage memristors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Probing Coherent States of Light and Matter in Two-Dimensional Semiconductors. Final Report

The ability to enhance light-matter interactions in engineered optical environments is well-established in micro- and nano-photonics. New classes of materials bring new rich correlations between spin, momentum, and light polarization that can be exploited in these photonic systems for information processing and low-power electronics. Interfacing these novel material features with strong optical interactions suggests the compelling capability to create hybrid light-matter systems harnessing low-energy and protected material properties such as spin. The long-term objective of this program was to investigate the interplay between pseudospin in 2D materials and light, revealing new coherent phenomena. The materials studied are the monolayer transition metal dichalcogenides (TMDs), which support polarization-sensitive optical transitions when isolated to a single sub-nanometer crystal layer in thickness. In particular, monolayer TMD semiconductors such as MoS 2 exhibit degenerate valleys in momentum space with distinct spin character. These valleys can be separately addressed by circularly polarized light, providing a tool for manipulation. Integrating this valley pseudospin of excitons in monolayer TMDs with engineered strong optical excitations to create novel coherent phenomena was a key long-term goal of this research. The scope of this research primarily focused on studying light-matter interactions of valley-sensitive excitations in monolayer TMDs. The scope also included the integration of monolayer materials that support valley-polarized emission into photonic devices. This approach extends prior work on exciton-polaritons in 2D materials toward a platform with far more control and improved light input and output characteristics to aid scalability of these polarization-sensitive phenomena to many-body, long-range optical networks. During the course of the five-year Early Career program, the approaches led to successful progress on each proposed aim. Initial successful work seeded additional research that developed from the main themes, while this program focus evolved toward coherent manipulation of valley polaritons and integration with photonics. Both of these advanced topics set the stage for new capabilities in future innovative research. The results of this project provide advances in materials and methods relevant for new visions of opto-electronics and photonics that can improve information processing in an era of increased focus on quantum and coherent phenomena. The research has also contributed to the training of two postdoctoral scholars and five graduate students.

2D Materials↗
DOE OSTI2021

Towards a reliable assessment of charging effects during surface analysis: Accurate spectral shapes of ZrO 2 and Pd/ZrO 2 via X-ray Photoelectron Spectroscopy

X-ray Photoelectron Spectroscopy of large bandgap or insulating material surfaces relies on an effective mechanism that compensates for the emission (loss) of electrons by maintaining the material surface at a steady-state uniform potential. While a steady-state may be attained by utilizing an active compensation, such as low power electron emitting filament, there is the possibility that the surface potential is not uniform over the area analyzed, leading to peak shifts and incorrect spectral interpretation. Here, in this work, a spectral data processing method based on mapping the ZrO 2 and Pd/ZrO 2 surfaces utilizing photoemission peak binding energy is proposed, which provides information about the response of specific material surfaces to charge compensation. Spectromicroscopy of ZrO 2 and Pd/ZrO 2 surfaces without spatial information is used to monitor the efficacy of charge compensation. Exploiting counts distributed over many bins require the use of procedures and algorithms essential to practical mapping peak positions. Iterative singular value decomposition is therefore introduced and utilized as a means of efficiently delivering spatially resolved spectra from which binding energy for peaks is computed. The concepts developed in this work result in robust and accurate peak models of ZrO 2 and Pd/ZrO 2 that can be applied in XPS analysis of not only ZrO 2 but other large bandgap or insulating material surfaces. Supporting arguments for a peak model representing signal from Zr 3p and Pd 3d are developed within this work are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Lessons learned from first-principles calculations of transition metal oxides

Transition metal oxides (TMOs) are an important class of materials with diverse applications, ranging from memristors to photoelectrochemical cells. First-principles calculations are critical for understanding these complex materials at an atomic level and establishing relationships between atomic and electronic structures, particularly for probing quantities difficult or inaccessible to experiment. Here, we discuss computational strategies used to understand TMOs by focusing on two examples, a photoanode material, BiVO4, and an oxide for low-power electronics, La1−xSrxCoO3. We highlight key aspects required for the modeling of TMOs, namely, the descriptions of how oxygen vacancies, extrinsic doping, the magnetic state, and polaron formation impact their electronic and atomic structures and, consequently, many of the observed properties.

Vo, Hien (ORCID:0000000158315599)↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε r ~ 22) amorphous native oxide Bi 2 SeO x on the 2D semiconducting Bi2O2Se using O 2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi 2 O 2 Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi 2 O 2 Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures

Current silicon (Si) fin transistors rely on (100) and (110) crystallographically oriented surfaces, and the proposed alternate channel transistor technology comprises materials with higher mobility than Si. Crystallographically oriented epitaxial germanium (Ge) and indium–gallium arsenide (InGaAs) have the potential to replace Si in ultra-low power transistor applications. The higher carrier lifetime is an indication of superior material quality, which relates to the leakage current of a fin transistor. To gain insights into the carrier recombination dynamics in these crystallographically oriented epitaxial Ge and InGaAs layers, the contactless microwave photoconductive decay (μ-PCD) technique at an excitation wavelength of 1500 nm was employed to probe the orientation-specific carrier lifetimes. Highly effective carrier lifetimes >200 ns for (100)Ge/AlAs and (110)Ge/AlAs, and ~80 ns for (111)Ge/AlAs heterostructures, were extracted at room temperature. The measured carrier lifetime has a strong dependence on the surface orientation, which could be related to orientation-specific bulk trap states present within the bandgap of Ge. The (111)Ge orientation has 3 times lower carrier lifetime compared to the (100)Ge and (110)Ge surface orientations. On the other hand, the carrier lifetimes of 125 μs and 10 ns were determined from (100)InGaAs/InP and (110)InGaAs/InP heterostructures, respectively. The reduction in carrier lifetimes in both (111)Ge and (110)InGaAs was due to high electrical conductivity or higher bulk trap states present within the bandgap as well as the facet-dependent growth of the (110)InGaAs layer on InP. A surface passivating layer is indispensable for these orientation-specific epitaxial layers to improve the carrier lifetime. Therefore, the higher carrier lifetimes from technologically interesting (100)Ge and (110)Ge surfaces would offer a path for the development of Ge-based ultra-low power electronics, and optoelectronic devices based on the (100)InGaAs layer.

36 MATERIALS SCIENCE↗
DOE OSTI2020

New approaches for achieving more perfect transition metal oxide thin films

This perspective considers the enormous promise of epitaxial functional transition metal oxide thin films for future applications in low power electronic and energy applications since they offer wide-ranging and highly tunable functionalities and multifunctionalities, unrivaled among other classes of materials. It also considers the great challenges that must be overcome for transition metal oxide thin films to meet what is needed in the application domain. These challenges arise from the presence of intrinsic defects and strain effects, which lead to extrinsic defects. Current conventional thin film deposition routes often cannot deliver the required perfection and performance. Since there is a strong link between the physical properties, defects and strain, routes to achieving more perfect materials need to be studied. Several emerging methods and modifications of current methods are presented and discussed. The reasons these methods better address the perfection challenge are considered and evaluated.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Studies in pulse shape discrimination for an optimized ASIC design

The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate scintillator. At the same time, the large number of channels in a typical array calls for the development of low-cost and low-power electronics. A custom integrated circuit (ASIC) is an ideal solution for this purpose. To assess the requirements for such an ASIC, studies were performed using two scintillators, Stilbene and EJ-276, coupled to a 6 x 6 mm SiPM from Onsemi. We demonstrate that both scintillators are viable for performing PSD for interaction energies from 100 keV to several MeV while optimizing the integration periods used in the PSD metric. These measurements inform the design parameters of the ASIC under development.

Si-PMTs↗
DOE OSTI2022

Thickness-dependent phase transition kinetics in lithium-intercalated MoS 2

The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T'-MoS 2 induced by the electrochemical intercalation of lithium. In this study, we observe that the growth rate of 1T' domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. In this study, the suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T'-MoS 2 into Li2S and Mo is also thickness-dependent and the stability of 1T'-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T'-MoS 2 into Li 2 S and Mo nanoclusters.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Valley-Coherent Quantum Anomalous Hall State in AB-Stacked MoTe 2 / W S e 2 Bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show that the newly discovered QAH state in AB-stacked MoTe 2 / W S e 2 moiré bilayers is not valley polarized but valley coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (antialigned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states. Published by the American Physical Society 2024

2-dimensional systems↗
DOE OSTI2023

Predictive Theory of Topological States of Matter (Final Report for DOE Award DE-SC0018945)

This DOE award supported the PI’s research on topological quantum materials between 2018 and 2021. The PI developed predictive theories for new classes of topological insulators and topological/unconventional superconductors and identified their material realizations in collaboration with experimentalists. The PI theorized new topological transport phenomena, including spin superfluidity in moire materials and the superconducting diode effect. Topological transport phenomena have potential applications in cryogenic computing, low-power electronics, high-frequency rectification, infrared detection, energy harvesting and thermoelectric application. By discovering new quantum materials and new functional properties, the PI’s research contributed significantly to the advancement of DOE scientific and technological base, especially in energy frontier research.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A Low Voltage DC Power Electronic Hub to Support Buildings

This paper presents the communication, control, and architecture, for a low voltage (nominal 480V) hybrid AC/DC microgrid for supporting small commercial buildings with critical data center loads. The proposed system is based on a dc-power electronic hub (PEH) that seamlessly integrates renewable energy resources, energy storage, and back-up generation to support commercial building economical energy management and reliability. This PEH concept provides a parallelization of critical power to the commercial and industrial buildings leading to increased efficiency and reliability compared to traditional uninterruptable power supplies. The demonstration of the proposed PEH architecture and controls is conducted through a controller hardware in the loop validation.

Starke, Michael↗
DOE OSTI2023

Validation of the single-event method for low-energy electron transport via stopping power calculations with $\mathrm{MCNP}$

Monte Carlo simulations of low-energy ( <50 keV) electron transport in matter are essential for a broad range of application fields. Several Monte Carlo codes have developed specialized treatments for this case, but a comprehensive validation of low-energy electron transport for general-purpose simulations remains lacking in the literature. One approach to accomplish this validation is calculation of stopping power using low-energy electron transport physics, as stopping power is a fundamental radiation transport quantity which must be simulated accurately for nearly any application. Here in this work, we use the Monte Carlo N-Particle (MCNP) radiation transport code with the single-event method for electron transport to calculate stopping powers of low-energy electrons (50 eV to 30 keV) in 41 elemental solids, 14 compound solids, and five rare gas solids, comparing simulation results to published semi-empirical stopping power calculations from optical measurements. In general, the simulations give good agreement (typically within ±10%) with semi-empirical stopping power values at higher energies: 300 eV and above for most elemental solids, 1 keV and above for compound solids, and 400 eV and above for rare gas solids. Agreement between MCNP and semi-empirical values is worse below these energies. The most significant source of error is the EPRDATA14 cross section data, which does not account for changes in electronic structure due to solid-state bonding, particularly in compound materials. The simplistic model of atomic excitation used to generate the EPRDATA14 cross sections is another key source of error. Additionally, the breakdown of the continuous slowing-down approximation introduces significant uncertainty at low energies, although this is a limitation of the calculation method and not of the simulation procedure. Accounting for these and other uncertainty sources, the single event method in MCNP is robust and able to give good accuracy for a variety of low-energy electron transport problems through diverse kinds of materials.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2021

High-performance carbon nanotube electronic ratchets

The rapid advancements in low-power portable/wearable electronic devices require concurrent development of technologies that can provide power without the need for bulky, heavy battery storage. Electronic ratchets, asymmetric transistor-based devices that can convert AC signals or electronic noise into DC power, have been proposed as one solution to this growing need. Here, the recent demonstration of conjugated polymer-based electronic ratchets offers a route toward lightweight, flexible power sources for portable applications. Here we demonstrate the fabrication of the first electronic ratchets where the active channel component consists of semiconducting single-walled carbon nanotubes (s-SWCNTs), which can transform electronic noise or AC signals to a stable DC current with higher output power (up to ca. 14 mW for a chemically doped device) than their polymer-based analogs. We also show that patterning of the dopant profile in the s-SWCNT channel enables reasonable power conversion performance (ca. 3.5 mW) with improved stability relative to homogeneously doped devices. Our findings demonstrate the promise for s-SWCNT electronic ratchets as energy harvesting devices for portable, low-power applications.

ENGINEERING,MATERIALS SCIENCE,NANOSCIENCE AND NANO↗