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At least 19 records

50 Mb/s, 220-mW Laser-Array Transmitter

Laser transmitter based on injection locking produces single-wavelength, diffraction-limited, single-lobe beam. Output stage is array of laser diodes producing non-diffraction-limited, multi-mode beam in absence of injection locking. Suitable for both free-space and optical-fiber communication systems. Because beam from transmitter focused to spot as small as 5 micrometers, devices usable for reading and writing optical disks at increased information densities. Application also in remote sensing and ranging.

Cornwell, Donald M., Jr.↗

Diffraction-Coupled, Phase-Locked Semiconductor Laser Array

Stable, narrow far field produced. Array of lasers fabricated on single chip. Individual laser waveguides isolated from each other except in end portions, where diffraction coupling takes place. Radiation pattern far from laser array has single, sharp central lobe when all lasers operate in phase with each other. Shape of lobe does not vary appreciably with array current. Applications include recording, printing, and range finding.

Katz, Joseph↗

Diode laser array

A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

Carlson, Nils W.↗

Mode-Locked Laser Arrays for WDM Applications

Colliding pulse mode-locked laser arrays are being developed at 20 GHz for WDM applications. Arrays with 5 wavelengths in the EDFA gain bandwidth have already been demonstrated, with the final goal being a packaged, 10 wavelength mode-locked laser array.

mode-locked laser arrays↗

Phase-locked laser array

A phase-locked laser array comprises a substrate with two spaced-apart pluralities of channels extending towards different reflecting surfaces of the array. The axes of symmetry of the channels of one plurality are offset from the axes of symmetry of the channels of the second plurality. Coupling of light propagating in the optical waveguides over one plurality of channels into the waveguides over the second plurality of channels induces a zero phase difference between the laser oscillations of adjacent channels.

Botez, Dan↗

Phase-locked laser array

A phase-locked laser array comprises a body of semiconductor material having means for defining a plurality of substantially parallel lasing zones which are spaced an effective distance apart so that the modes of the adjacent lasing zones are phase-locked to one another. One of the array electrodes comprises a plurality of electrical contacts to the body between the lasing zones. These contacts provide an enhanced current density profile and thus an increase in the gain in the regions between the lasing zones so that zero degree phase-shift operation between adjacent lasing zones is achievable.

Botez, Dan↗

Coupling mechanism of gain-guided integrated semiconductor laser arrays

It is shown that a gain-guided laser array couples via propagating fields rather than the evanescent mode coupling typically responsible for directional coupling in passive (directional couplers) and active (laser array) devices. It is shown that these phase-locked modes exhibit an interference pattern, in the junction plane, which arises from the curvature of the phase fronts of optical fields of the interacting lasers. The experimental results are interpreted with the aid of a simple theoretical model, and the effect of the observed mode pattern on the coupling of gain-guided lasers is discussed.

Kapon, E.↗

A New Laser Beam Pointing Method Using Laser Arrays

A new method is described for optical data transmissions from satellites using laser arrays for laser beam pointing. It combines a lens system and a vertical-cavity surface-emitting laser (VCSEL)/Photodetector Array, both mature technologies, in a novel way. This system is applied to satellites in low-Earth orbit, (LEO). It can replace current architectures which use dynamical systems, (i.e., moving parts) to point the laser, and which may use vibration isolation platforms. Results of computer simulations show diffraction limited beam propagation. Possible additional applications are to planetary distances (deep space optical communications, (DSOC)), to optical multiple access, (OMA), to communication between a constellation of close satellites, and to satellites that use modulating retro-reflectors. Keywords: laser beam pointing, free-space optical communication, low-Earth orbit (LEO) data communications, integrated VCSEL/ photodetector arrays, deep space optical communications (DSOC), optical multiple access (OMA), constellation of close satellites, modulating retro-reflectors.

Goorjian, P. M.↗

Incoherent GaAlAs/GaAs semiconductor laser arrays

The fabrication of an incoherent laser array is reported. The main features of the arrays are low threshold index-guided laser elements, single-lobe far-field pattern, low astigmatism, low current operation, dense packing, and total electrical and optical isolation. With further development, this device should have applications in multihead optical-disk reading and writing, multifiber optical communications, and line-of-sight communications.

Hwang, C. J.↗

Rate equations analysis of phase-locked semiconductor laser arrays under steady state conditions

Rate equations analysis of phase-locked semiconductor laser arrays has been carried out. It was found that for given (laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density. The results of this analysis were then combined with the waveguide properties of the laser array waveguide, yielding a basic model of phase-locked diode laser arrays. This model explains the effects of the variation of the current combination through the array elements on its mode structure that were observed recently.

Katz, J.↗

Approximate Analysis of Semiconductor Laser Arrays

Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

Marshall, William K.↗

A New Laser Beam Pointing Method Using Laser Arrays

A new method is described for optical data transmissions from satellites using laser arrays for laser beam pointing. It combines a lens system and a VCSEL/Photodetector Array, both mature technologies, in a novel way. This system is applied to satellites in LEO. It can replace current architectures which use dynamical systems, (i.e., moving parts) to point the laser, and which use vibration isolation platforms. Results of computer simulations show diffraction limited beam propagation. Possible additional applications are to planetary distances (deep space optical communications, DSOC) to optical multiple access, to communication between a constellation of close satellites, and to satellites that use modulating retro-reflectors.

Goorjian, Peter M.↗

Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

Hemmati, H.↗

Power conversion efficiency of semiconductor injection lasers and laser arrays in CW operation

The problem of optimizing power conversion efficiency of semiconductor lasers and laser arrays and minimizing efficiency degradation due to temperature effects is treated. A method for calculating this efficiency is described and some calculated results are presented and discussed. Under some conditions, a small increase in the thermal resistance of the device can result in a large reduction of its efficiency. Temperature effects are important in high-power semiconductor laser, and in particular in laser arrays, where low thermal resistance heat sinking may be crucial to the device operation.

Katz, J.↗

Spatiospectral and picosecond spatiotemporal properties of a broad area operating channeled-substrate-planar laser array

Spatiospectral and spatiotemporal properties of an eight-element channeled-substrate-planar laser array are investigated in both CW and pulsed operating conditions. The closely spaced CSP array with strong optical coupling between array elements is characterized by a broad area laserlike operation determined by its spatial mode spectra. The spatiotemporal evolution of the near and far field exhibits complex dynamic behavior in the picosecond to nanosecond domain. Operating parameters for the laser device have been experimentally determined. These results provide important information for the evaluation of the dynamic behavior of coherent semiconductor laser arrays.

Yu, NU↗

Single longitudinal mode operation of semiconductor laser arrays with etalon feedback

The multiple longitudinal mode output of high-power diode-laser arrays is converted into single mode with 97 percent efficiency by optical feedback from a thin (less than 200-micron thick) etalon external to the laser. The coupled cavities formed by addition of the etalon favor a single longitudinal mode. Single-mode operation is retained at 0.1 MHz pulsed rates. Both the near-field and the far-field patterns of the laser array remain nearly unchanged while the array operates in a single longitudinal mode.

Hemmati, H.↗

Phase-locked semiconductor laser array with separate contacts

A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-micron-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.

Katz, J.↗