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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Inverted Metamorphic Multijunction (IMM) Cell Processing Instructions

This technical report details the processing schedule used to fabricate Inverted Metamorphic Multijunction (IMM) concentrator solar cells at The National Renewable Energy Laboratory (NREL). These devices are used as experimental test structures to support the research at NREL that is focused on increasing the efficiency of photovoltaic power conversion. They are not intended to be devicessuitable for deployment in working concentrator systems primarily because of heat sinking issues. The process schedule was developed to be compatible with small sample sizes and to afford relatively rapid turn-around times, in support of research efforts. The report describes the use of electro deposition of gold for both the back and front contacts. Electro-deposition is used because of itsrapid turn around time and because it is a benign metallization technique that is seldom responsible for damage to the semiconductors. The layer transfer technique is detailed including the use of a commercially available adhesive and the etching away of the parent gallium arsenide substrate. Photolithography is used to define front contact grids as well as the mesa area of the cell. Finally,the selective wet chemical etchant system is introduced and its use to reveal the back contact is described.

14 SOLAR ENERGY↗
DOE OSTI2018

Internal Resistive Barriers Related to Zinc Diffusion During the Growth of Inverted Metamorphic Multijunction Solar Cells

Majority carrier barriers at heterointerfaces are a common source of non-linear resistance that hinders concentrator solar cell performance. The source of a particular barrier is often unclear in a multijunction device with numerous heterointerfaces. In this work, we demonstrate Zn-dopant diffusion during inverted metamorphic multijunction (IMM) device growth to be one key cause of internal barrier formation. Using an inverted GaAs/GaAs tandem solar cell with a high temperature annealing layer grown in between each subcell, we simulate the annealing conditions of a multijunction growth in a simplified structure. Through analysis of the device by secondary ion mass spectrometry (SIMS) and electrochemical capacitance-voltage profiling, we show that annealing causes Zn to diffuse out of the top cell Ga 0.5 In 0.5 P back surface field (BSF) and accumulate in the GaAs base. Through equilibrium band modeling, we show that the resultant doping profile forms an energetic barrier to hole flow in the valence band, which correlates with fill factor losses in the current-voltage curves measured under concentration. When we, instead, employ a C-doped Al 0.2 Ga 0.8 As BSF layer in the top cell, we do not observe evidence of a heterojunction barrier. We attribute this difference to the reduced diffusivity of carbon, confirmed by SIMS, as well as more favorable valence band offsets between GaAs and Al 0.2 Ga 0.8 As. Finally, we compare 5-junction IMM cells with Al 0.2 Ga 0.8 As:C and Ga 0.5 In 0.5 P:Zn BSF layers in the GaAs third junction, respectively, and show a significantly improved concentrator device performance when Al 0.2 Ga 0.8 As:C is employed. Lastly, we demonstrate the importance of designing annealing tolerance into multijunction structures that are subjected to extended annealing during growth.

14 SOLAR ENERGY↗
DOE OSTI2018

Photo-Electrochemical Hydrogen Generation from Inverted Metamorphic Multijunction III-Vs

Our goal is to improve solar-to-hydrogen (STH) efficiency from just over 10% to over 20% via novel tandem semiconductor materials and configurations. Our primary focus is to develop inverted metamorphic multijunction (IMM) III-V semiconductors that have bandgaps optimized for water splitting. We will also discuss measurement challenges in appraising STH efficiency, some of which are specific to tandem absorbers. Using more stringent measurement standards, we have confirmed 16.2% STH on our most advanced IMM devices.

14 SOLAR ENERGY↗
DOE OSTI2018

Printed Assemblies of Microscale Triple-Junction (3J) Inverted Metamorphic (IMM) GaInP/GaAs/InGaAs Solar Cells

Transfer printing of microscale devices has been shown to be a manufacturable pathway to low-profile, low cost, high concentration photovoltaic modules, where extremely high efficiency solar cells are desirable to achieve competitive costs. Inverted metamorphic multijunction (IMM) solar cells represent a promising platform for ultrahigh efficiency concentrator photovoltaic systems with a clear pathway to 50% efficiency. While transfer printing of microscale solar cell devices has been demonstrated with traditional upright solar cell structures, IMM structures present additional processing challenges. We demonstrate, for the first time, the transfer printing of fully-functional microscale triple-junction (3J) IMM solar cells.

14 SOLAR ENERGY↗
DOE OSTI2017

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solution to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.

14 SOLAR ENERGY↗
DOE OSTI2020

Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

25 ENERGY STORAGE↗
DOE OSTI2020

Development of Lattice-Mismatched GaInAsP for Radiation Hardness

We develop lattice-mismatched GaInAsP as an alternative alloy to pure As-based alloys currently used in III-V multijunction solar cells. Increasing the alloy phosphorous and indium content while maintaining an optimal bandgap may allow high efficiency multijunction devices with increased radiation hardness. Here, 1.0-eV GaInAsP is developed and implemented into single and multijunction solar cell devices. The lattice-mismatched GaInAsP must be grown strain free, and the subcell thickness must be maintained below the thickness where surface-driven phase separation occurs. As observed in transmission electron microscopy and cathodoluminescence imaging, phase separation strengthens in the GaInAsP layer and leads to interfacial defect formation when the cell thickness is too great. We show single junction 1.0-eV Ga 0.5 In 0.5 As 0.7 P 0.3 with excellent carrier collection and a bandgap-voltage offset of 0.40 V. This material quality approaches that of 1.0-eV Ga 0.7 In 0.3 As used in inverted metamorphic multijunction devices, but has increased phosphorus content and consequently is expected to have a higher radiation resistance. We incorporate the 1.0-eV GaInAsP subcell into a 3-junction inverted metamorphic solar cell to test the performance of the subcell in a multijunction. No additional loss is observed upon integration into a multijunction cell: both the carrier collection and voltage of the GaInAsP subcell are unchanged from single junction devices. While further materials development and radiation testing is still required, these preliminary results indicate that lattice-mismatched GaInAsP can be effectively used in multijunction solar cells to replace radiation-soft materials.

14 SOLAR ENERGY↗
DOE OSTI2016

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al x GayIn 1-x-y As and highly Se-doped Burstein-Moss (BM) shifted Ga x In 1-x P. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga x In 1-x P on B-miscut substrates and Al x GayIn 1-x-y As/Ga x In 1-x P(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibit Woc = 0.41 V at mA/ cm 2 , performance comparable with the state-of-the-art Ga x In 1-x P grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga x In 1-x P CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.

14 SOLAR ENERGY↗
DOE OSTI2022

Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the middle cell bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. Additionally, these high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the AM1.5 global and AM0 space spectra, respectively, and the global efficiency is higher than previous record six-junction devices.

14 SOLAR ENERGY↗
DOE OSTI2016

Metamorphic III–V Solar Cells: Recent Progress and Potential

Inverted metamorphic multijunction solar cells have been demonstrated to be a pathway to achieve the highest photovoltaic (PV) conversion efficiencies. Attaining high-quality lattice-mismatched (metamorphic) semiconductor devices is challenging. However, recent improvements to compositionally graded buffer epitaxy and junction structures have led to the achievement of high-quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. For this high material quality, photon recycling is significant, and therefore, the optical environment of the solar cell becomes important. In this paper, we first present recent progress and performance results for 1- and 0.7-eV GaInAs solar cells grown on GaAs substrates. Then, an electrooptical model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that the quality of 1-eV subcells is such that further improving its electronic quality does not produce significant Voc increases in the four-junction inverted metamorphic subcells, unless a back reflector is used to enhance photon recycling, which would significantly complicate the structure. Conversely, improving the electronic quality of the 0.7-eV subcell would lead to significant Voc boosts, driving the progress of four-junction inverted metamorphic solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2015

High Radiation Resistance IMM Solar Cell

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Pan, Noren↗
NASA NTRS2015

Lightweight IMM PV Flexible Blanket Assembly

Deployable Space Systems (DSS) has developed an inverted metamorphic multijunction (IMM) photovoltaic (PV) integrated modular blanket assembly (IMBA) that can be rolled or z-folded. This IMM PV IMBA technology enables a revolutionary flexible PV blanket assembly that provides high specific power, exceptional stowed packaging efficiency, and high-voltage operation capability. DSS's technology also accommodates standard third-generation triple junction (ZTJ) PV device technologies to provide significantly improved performance over the current state of the art. This SBIR project demonstrated prototype, flight-like IMM PV IMBA panel assemblies specifically developed, designed, and optimized for NASA's high-voltage solar array missions.

Spence, Brian↗
NASA NTRS2015

Thin, Flexible IMM Solar Array

NASA needs solar arrays that are thin, flexible, and highly efficient; package compactly for launch; and deploy into large, structurally stable high-power generators. Inverted metamorphic multijunction (IMM) solar cells can enable these arrays, but integration of this thin crystalline cell technology presents certain challenges. The Thin Hybrid Interconnected Solar Array (THINS) technology allows robust and reliable integration of IMM cells into a flexible blanket comprising standardized modules engineered for easy production. The modules support the IMM cell by using multifunctional materials for structural stability, shielding, coefficient of thermal expansion (CTE) stress relief, and integrated thermal and electrical functions. The design approach includes total encapsulation, which benefits high voltage as well as electrostatic performance.

Walmsley, Nicholas↗
NASA NTRS2015

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

Measurement is essential for the evaluation of new photovoltaic (PV) technology for space solar cells. NASA Glenn Research Center (GRC) is in the process of measuring several solar cells in a supplemental experiment on NASA Goddard Space Flight Center's (GSFC) Robotic Refueling Mission's (RRM) Task Board 4 (TB4). Four industry and government partners have provided advanced PV devices for measurement and orbital environment testing. The experiment will be on-orbit for approximately 18 months. It is completely self-contained and will provide its own power and internal data storage. Several new cell technologies including four- junction (4J) Inverted Metamorphic Multijunction (IMM) cells will be evaluated and the results compared to ground-based measurements.

solar cell↗
NASA NTRSDate not supplied

Extreme Environments Solar Power Project For Use Near Jupiter

The Extreme Environment Solar Power (EESP) Project goal was to develop solar cell and solar array design concept technologies for space power applications in high radiation and low solar intensity, low temperature (LILT) environments. NASA missions focused on outer planets, such as Jupiter, are subjected to intense radiation while experiencing less than ten percent of the solar flux relative to a mission in the general vicinity of Earth. Under these conditions, present solar array technology is not as efficient in converting the sun’s energy, and the solar array performance degrades quickly due to the additional radiation exposure. The EESP Project objectives were accomplished through four competitively selected contracts. These contracts were awarded with a Base and two option periods of performance. The Base requirements included System Design and Component Test & Analysis with a duration of nine and one half (9.5) months. The Option I requirements involved the fabrication of test hardware that NASA would evaluate following its delivery, and this period of performance had a duration of thirteen (13) months. The Option II requirements involved the fabrication of a scalable system prototype that can be integrated into a system level application and be demonstrated in a relevant environment. Option II had a duration of fifteen (15) months. The Transformational Array (TA) is an array concept developed by JHU-APL with Deployable Space Systems (DSS), SolAero Technologies and NewForge Technologies that proceeded through all three contract periods. The TA combines the DSS Roll Out Solar Array (ROSA) with Flexible Array Concentrator Technology (FACT) and SolAero’s Inverted Metamorphic Multijunction (IMM) solar cells for operation in the EESP Project environment. To achieve the EESP Project goals, the JHU-APL team conducted several investigations to improve performance of the solar cells and increase their efficiency, reduce outgassing contamination of the concentrators from the solar cell assembly adhesives, and to test the robustness of a sample blanket during deployment and retraction. Additionally, the team performed vibration, thermal cycling, and performance tests at a Standard Power Module (SPM) level. At the end of Option II, the JHU-APL team achieved the following performance metrics: • 39% beginning of life (BOL) cell efficiency at 5 AU and -125 C • 29% end of life (EOL) efficiency at the blanket level at 50 W/m2, -125 C and 4x1015 1 MeV e/cm2 • Increased specific power to 8 W/kg at EOL for the entire array including structure, deployment, and pointing mechanisms • Demonstrated the ability to survive numerous deploy-retract cycles without degradation • Reached a current System-Level Technology Readiness Level, TRL5 This presentation will describe the Transformational Array and component technologies and will discuss future potential uses for the system.

Anna Maria Pal↗
DOE OSTI2019

Printed assemblies of microscale triple–junction inverted metamorphic GaInP/GaAs/InGaAs solar cells

Inverted metamorphic (IMM) multijunction solar cells represent a promising material platform for ultrahigh efficiency photovoltaic systems (UHPVs) with a clear pathway to beyond 50% efficiency. The conventional device processing of IMM solar cells, however, typically involves wafer bonding of a centimeter-scale die and destructive substrate removal, thereby imposing severe restrictions in achievable cell size, type of module substrate, spatial layout, as well as cost effectiveness. Here, we report material design and fabrication strategies for microscale triple-junction IMM (3J IMM) Ga 0.51 In 0.49 P/GaAs/In 0.26 Ga 0.74 As solar cells that can overcome these difficulties. Specialized schemes of delineation and undercut etching enable the defect-free release of microscale IMM solar cells and printed assemblies on a glass substrate in a manner that preserves the growth substrate, where efficiencies of 27.3% and 33.9% are demonstrated at simulated AM1.5D one- and 351 sun illumination, respectively. A composite carrier substrate where released IMM microcells are formed in fully functional, print-ready configurations allows high-throughput transfer printing of individual IMM microcells in a programmable spatial layout on versatile choices of module substrate, all desired for CPV applications.

14 SOLAR ENERGY↗