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At least 19 records

Recent progress in development of mid-IR interband cascade lasers

Type-II interband cascade lasers are promising in becoming efficient and compact mid-infrared light sources for many applications. Significant progress toward such a goal has recently been made in terms of lowering their threshold current densities and raising operation temperature. Also, continuous wave operation of single-mode distributed feedback interband cascade lasers has been demonstrated. We review the recent progress of the Sb-based mid-IR interband cascade lasers and present some latest results.

lasers↗

Long wavelength interband cascade lasers

InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11 μm or extended operating wavelength beyond 13 μm. Here, the ICLs near 11 μm yielded a significantly reduced continuous wave (cw) lasing threshold of 23 A/cm 2 at 80 K with substantially increased cw output power, compared with previously reported ICLs at similar wavelengths. ICLs made from the second wafer incorporated an innovative quantum well active region, comprised of InAsP layers, and lased in the pulsed-mode up to 120 K at 13.2 μm, which is the longest wavelength achieved for III–V interband lasers.

47 OTHER INSTRUMENTATION↗

Mid-IR interband cascade lasers

Efficient mid-IR interband cascade (IC) lasers are developed based on 111-V semiconductor materials to cover wavelength range from 2.7 to 5.6 (mu)m. These IC lasers reuse injected electrons in cascade stages for photon generation with high quantum efficiency to achieve high output powers. Also, IC lasers have low threshold current density with very efficient use of applied voltage, resulting in reduced power consumptions. Single-mode distributed feedback lasers have been made, and integrated into aircraft and balloon instrument which made measurements of CH4 and HCI. In this work, the characteristics of IC lasers and their recent development are reviewed.

mid - infrared↗

Single-Mode, Distributed Feedback Interband Cascade Lasers

Single-mode, distributed feedback interband cascade lasers (ICLs) using distributed-feedback gratings (e.g., lateral Bragg gratings) and methods of fabricating such ICLs are provided. The ICLs incorporate distributed-feedback gratings that are formed above the laser active region and adjacent the ridge waveguide (RWG) of the ICL. The ICLs may incorporate a double-ridge system comprising an optical confinement structure (e.g., a RWG) disposed above the laser active region that comprises the first ridge of the double ridge system, a DFB grating (e.g., lateral Bragg grating) disposed above the laser active region and adjacent the optical confinement structure, and an electric confinement structure that passes at least partially through the laser active region and that defines the boundary of the second ridge comprises and the termination of the DFB grating.

Frez, Clifford F.↗

Recent progress in the development of antimonide-based mid-ir interband cascade lasers

Antimonide-based type-II interband cascade lasers are promising in becoming efficient and compact mid-infrared light sources for many applications such as gas sensing and environmental monitoring. Significant progress toward such a goal has recently been made in terms of achieving low threshold current densities, high temperature operation, and continuous wave operation of single-mode distributed feedback lasers. We review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance.

semiconductor superlattices↗

Low threshold interband cascade lasers operating above room temperature

Mid-IR type-II interband cascade lasers were demonstrated in pulsed mode at temperatures up to 325 K and in continuous mode up to 200 K. At 80 K, the threshold current density was 8.9 A/cm2 and a cw outpout power of ~140 mW/facet was obtained.

interband cascade lasers GaSb molecular beam epita↗

Pushing the performance limits of long wavelength interband cascade lasers using innovative quantum well active regions

Here, we report significantly enhanced device performance in long wavelength interband cascade lasers (ICLs) by employing a recently proposed innovative quantum well (QW) active region containing strained InAsP layers. These ICLs were able to operate at wavelengths near 14.4 μm, the longest ever demonstrated for III–V interband lasers, implying great potential of ICLs to cover an even wider wavelength range. Also, by applying the aforesaid QW active region configuration on ICLs at relatively short wavelengths, ICLs were demonstrated at a low threshold current density (e.g., 13 A/cm 2 at 80 K) and at temperatures up to 212 K near 12.4 μm, more than 50 K higher than the previously reported ICLs with the standard W-shape QW active region at similar wavelengths. This suggests that the QW active region with InAsP layers can be used to improve device performance at the shorter wavelengths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗

High-Speed Operation of Interband Cascade Lasers

Optical sources operating in the atmospheric window of 3-5 microns are of particular interest for the development of free-space optical communication link. It is more advantageous to operate the free-space optical communication link in 3-5-microns atmospheric transmission window than at the telecom wavelength of 1.5 m due to lower optical scattering, scintillation, and background radiation. However, the realization of optical communications at the longer wavelength has encountered significant difficulties due to lack of adequate optical sources and detectors operating in the desirable wavelength regions. Interband Cascade (IC) lasers are novel semiconductor lasers that have a great potential for the realization of high-power, room-temperature optical sources in the 3-5-microns wavelength region, yet no experimental work, until this one, was done on high-speed direct modulation of IC lasers. Here, highspeed interband cascade laser, operating at wavelength 3.0 m, has been developed and the first direct measurement of the laser modulation bandwidth has been performed using a unique, highspeed quantum well infrared photodetector (QWIP). The developed laser has modulation bandwidth exceeding 3 GHz. This constitutes a significant increase of the IC laser modulation bandwidth over currently existing devices. This result has demonstrated suitability of IC lasers as a mid-IR light source for multi-GHz free-space optical communications links

Soibel, Alexander↗

Free Space Optical Communication Utilizing Mid-Infrared Interband Cascade Laser

A Free Space Optical (FSO) link utilizing mid-IR Interband Cascade lasers has been demonstrated in the 3-5 micron atmospheric transmission window with data rates up to 70 Mb/s and bit-error-rate (BER) less than 10 (exp -8). The performance of the mid-IR FSO link has been compared with the performance of a near-IR link under various fog conditions using an indoor communication testbed. These experiments demonstrated the lower attenuation and scintillation advantages of a mid-IR FSO link through fog than a 1550 nm FSO link.

semiconductor lasers↗

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10 7 /cm 2 after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Interband Cascade (IC) Optical Frequency Combs

We demonstrate an electrically-driven frequency comb whose sub-picosecond pulses span more than 1 THz of spectral bandwidth centered near 3.6 µm. This is achieved by passively mode locking an interband cascade laser with gain and saturable absorber sections monolithically integrated on the same chip.

Meyer, Jerry R.↗

Passively mode-locked interband cascade lasers

Optical frequency combs have revolutionized the field of high resolution real-time molecular spectroscopy. Here, we demonstrate an electrically-driven optical frequency comb whose sub-picosecond pulses span more than 1 THz of spectral bandwidth centered near 3.3 mm. This is achieved by passively mode locking an interband cascade laser in a multi-contact architecture with gain and saturable absorber sections monolithically integrated on the same chip.

Wysocki, Gerard↗

Waveguiding and Dispersion Properties of Interband Cascade Laser Frequency Combs

Mid-infrared semiconductor lasers have emerged as indispensable compact coherent sources for military and commercial applications. While much of the historical emphasis has been on maximizing the output power and/or spectral purity, a recent new focus has been on engineering these lasers to operate as optical frequency combs (OFCs) for broadband real-time spectroscopy. In particular, the combination of low-drive-power and broad gain bandwidth has made interband cascade laser (ICL) OFCs an attractive complement to quantum cascade laser OFCs operating at longer wavelengths. Moreover, ICL combs can potentially be incorporated into fully-integrated dual-comb spectrometers that employ fast, room-temperature IC photodetectors processed on the same chip.However, the high refractive index of the ICL’s GaSb substrate poses some challenges to the optical waveguiding. Because the modal index is considerably lower than that of the substrate, the optical field can penetrate the bottom cladding layer and leak into the GaSb, inducing wavelength-dependent interference that modifies the gain and group velocity dispersion (GVD) profiles. Even when the effect on lasing threshold is small, the comb properties can be adversely affected. Using the sub-threshold Fourier transform technique, we studied ICL combs with various ridge widths, substrate thicknesses, and center wavelengths. This allowed us to evaluate the effects of modal leakage on the GVD. We find that the resonant nature of the substrate modes induces oscillations, which affect both the spectral bandwidth and the phase-locking properties above threshold. Strategies to mitigate the GVD’s undesired and unpredictable spectral variation will be presented.

Meyer, J. R↗

Interband cascade detectors

A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are coupled into a carrier transport region having multiple quantum wells and characterized by intersubband relaxation that provides rapid charge carrier collection. The photo-excited carriers are collected from the carrier transport region at a conducting contact region. Another carrier transport region characterized by interband tunneling for multiple stages draws charge carriers from another conducting contact and replenishes the charge carriers to the active region for photo-excitation. A photocurrent is generated between the conducting contacts through the active region of the device.

Chuang, Shun Lien↗

Complex Type-II Interband Cascade MQW Photodetectors

Multiple-quantum-well (MQW) photodetectors of a proposed type would contain active regions comprising multiple superlattice subregions. These devices would have complex structures: The superlattice of each subregion would be designed for enhanced absorption of photons in a desired wavelength band (typically in the infrared) and multiple subregions of different design would be cascaded for multicolor operation. The designs of these photodetectors would take advantage of the characteristic alignment of the edges of the electron-energy bands in type-II quantum-well structures: Within each finite superlattice, interband transitions would be used for detecting photons, and between finite superlattices, intraband relaxation and interband tunneling would be used for transport of charge carriers, all such as to enable detection of normally incident photons. Absorption of photons in the active region of a photodetector according to the proposal could be significantly enhanced by designing the superlattice/MQW structures to contain closely spaced energy states. The photodetector could be operated with a small bias to facilitate transport of charge carriers. The superlattices could be somewhat chirped, with a preferred transport direction.

Yang, Rui↗