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We will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice based infrared photodectors using the barrier infrared detectors.
This slide presentation reviews the development of Multiple Waveband Temperature Sensor (MWTS). The MWTS project will result in a highly stable, monolithically integrated, high resolution infrared detector array sensor that records registered thermal imagery in four infrared wavebands to infer dynamic temperature profiles on a laser-irradiated ground target. An accurate surface temperature measurement of a target in extreme environments in a non-intrusive manner is required. The development challenge is to: determine optimum wavebands (suitable for target temperatures, nature of the targets and environments) to measure accurate target surface temperature independent of the emissivity, integrate simultaneously readable multiband Quantum Well Infrared Photodetectors (QWIPs) in a single monolithic focal plane array (FPA) sensor and to integrate the hardware/software and system calibration for remote temperature measurements. The charge was therefore to develop and demonstrate a multiband infrared imaging camera with the detectors simultaneously sensitive to multiple distinct color bands for front surface temperature measurements Wavelength ( m) measurements. Amongst the requirements are: that the measurement system will not affect target dynamics or response to the laser irradiation and that the simplest criterion for spectral band selection is to choose those practically feasible spectral bands that create the most contrast between the objects or scenes of interest in the expected environmental conditions. There is in the presentation a review of the modeling and simulation of multi-wave infrared temperature measurement and also a review of the detector development and QWIP capacities.
Dark current reduced by energy-discriminating quantum filter. Very long-wavelength-infrared hot-electron transistor developed. Device detects photons at wavelengths around 16 micrometers. Comprises photodector integrated with energy-discriminating quantum filter in multiple-quantum-well structure. Made of variously doped and undoped layers of GaAs (quantum wells) and Al(x)Ga(1-x)As (barriers between wells). In transistor, bound-to-continuum GaAs/Al(x)Ga(1-x)As multiple-quantum-well infrared photodectors (QWIP) serves as photosensitive emitter. Wide quantum well serves as base, and there is thick barrier between base and collector. Combination of barrier and base quantum well acts as energy-discriminating filter: electrons with higher energies pass through filter to collector, those with lower energies blocked and diverted from output-current path through base contact.
Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.