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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Study of photoconductive indium antimonide

Indium antimonide (InSb) material was assessed for use as photoconductive infrared detectors under low background conditions. Such detectors must be more rugged, and have lower capacitance, than the common photovoltaic InSb detector. Electronic grade n-type InSb was etched to 50 micrometers thickness, and tin and gold contacts were applied by evaporation. The test devices showed a relatively low ultimate impedance: 7 Mohms at 4.2 K. This was attributed to the presence of impurity levels of very shallow energies, and this material was judged unsuitable for low background detection.

Low, F. J.↗
NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

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NASA NTRS1983

Operation of integrating indium antimonide linear arrays at 65 K and below

The combination of a FET switch non-CCD readout architecture with high-quality mesa-photovoltaic indium-antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-micron region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (+ or - 2 percent). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and greater than 12 seconds at 65 K have been achieved. For both devices, kTC read noise levels of less than 1200 electrons have been measured.

Bailey, G. C.↗
NASA NTRS1976

Thermocapillary convection in microgravity crystal growth melts of indium-antimonide

Results of two recent crystal growth experiments conducted aboard Skylab are analyzed for thermoconvective aspects. Theoretical temperature and velocity profiles in the crystal melts are predicted via computer modeling. These results are compared with experimental data obtained from Skylab investigators. From theoretical considerations, both indium-antimonide experiments should have exhibited substantial thermocapillary convection, but did not due to probable oxide film interference and/or opposing solutal effects.

Bourgeois, S. V., Jr.↗
NASA NTRS1983

Integrating indium antimonide linear arrays at 65K and below

A schematic is presented of a simplified electronic architecture of experimental 128 element infrared imager. Tables are given of sample diode responsivity, 512 element focal plane performance summary, and 128 element FPA mechanical and electrical characteristics. Typical 43 x 43 micron detector IV characteristics at 84 K are given, along with typical 43 x 43 micron Indium Antimonide CV characteristic at 83 K.

Bailey, Gary C.↗
NASA NTRS1974

Indium antimonide crystal growth experiment M562

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects led to nonwetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible, for the first time, to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation of rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity-induced interference on earth are now within reach.

Gatos, H. C.↗
NASA NTRS1978

Optimizing indium antimonide (InSb) detectors for low background operation

The various noise sources that affect InSb detectors (and similar voltaic devices) are discussed and calculated. Methods are given for measuring detector resistance, photon loading, detector and amplifier capacitance, amplifier frequency response, amplifier noise, and quantum efficiency. A photovoltaic InSb detector with increased sensitivity in the 1 to 5.6 mu region is dicussed.

Treffers, R. R.↗
NASA NTRS1978

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗
NASA NTRS1981

Advanced indium antimonide monolithic charge coupled infrared imaging arrays

The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials.

Koch, T. L.↗
NASA NTRS1984

Astronomical camera using a high-performance indium antimonide linear array

The development and current status of InSb line arrays for astronomy are reviewed. Instrument concepts are currently being developed for an infrared instrument for NASA's Space Telescope which would use such detectors for both spectroscopy and imaging. Preliminary performance measurements are given for a simple pushbroom camera, using a 128-element line array, designed for operation on the 24-inch Cassegrain telescope at the JPL Table Mountain Observatory. The design and construction of the camera are described.

Herring, M.↗
NASA NTRS2006

Characterization and Modeling of Indium Gallium Antimonide Avalanche Photodiode and of Indium Gallium Arsenide Two-band Detector

A model of the optical properties of Al(x)Ga(1-x)As(y)Sb(1-y) and In(x)Ga(1-x)As(y)Sb(1-y) is presented, including the refractive, extinction, absorption and reflection coefficients in terms of the optical dielectric function of the materials. Energy levels and model parameters for each binary compound are interpolated to obtain the needed ternaries and quaternaries for various compositions. Bowing parameters are considered in the interpolation scheme to take into account the deviation of the calculated ternary and quaternary values from experimental data due to lattice disorders. The inclusion of temperature effects is currently being considered.

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