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Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗

Matrix dominated stress/strain behavior in polymeric composites: Effects of hold time, nonlinearity and rate dependency

In order to understand matrix dominated behavior in laminated polymer matrix composites, an elastic/viscoplastic constitutive model was developed and used to predict stress strain behavior of off-axis and angle-ply symmetric laminates under in-plane, tensile axial loading. The model was validated for short duration tests at elevated temperatures. Short term stress relaxation and short term creep, strain rate sensitivity, and material nonlinearity were accounted for. The testing times were extended for longer durations, and periods of creep and stress relaxation were used to investigate the ability of the model to account for long term behavior. The model generally underestimated the total change in strain and stress for both long term creep and long term relaxation respectively.

Gates, Thomas S.↗

Verification and application of the Iosipescu shear test method

Finite element models were used to study the effects of notch angle variations on the stress state within an Iosipescu shear test speciment. These analytical results were also studied to determine the feasibility of using strain gage rosettes and a modified extensometer to measure shear strains in this test specimen. Analytical results indicate that notch angle variations produced only small differences in simulated shear properties. Both strain gage rosettes and the modified extensometer were shown to be feasible shear strain transducers for the test method. The Iosipoescu shear test fixture was redesigned to incorporate several improvements. These improvements include accommodation of a 50 percent larger specimen for easier measurement of shear train, a clamping mechanism to relax strict tolerances on specimen width, and a self contained alignment tool for use during specimen installation. A set of in-plane and interlaminar shear properties were measured for three graphite fabric/epoxy composites of T300/934 composite material. The three weave patterns were Oxford, 5-harness satin, and 8-harness satin.

Walrath, D. E.↗

Growth of Defect-Free 3C-Sic on 4H- and 6H-SIC Mesas Using Step-Free Surface Heteroepitaxy

A new growth process, herein named step-free surface heteroepitaxy, has achieved 3C-SiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (Delta/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

Neudeck, Philip G.↗

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

A new growth process, herein named step-free surface heteroepitaxy, has achieved 3CSiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (delta a/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

Neudeck, Philip G.↗

Thermo-viscoelastic analysis of composite materials, volume 1

Advanced composite materials, especially graphite/epoxy, are being applied to aircraft structures in order to improve performance and save weight. An important consideration in composite design is the residual strength of a structure containing holes, delaminations, or interlaminar damage when subjected to compressive loads. Recent studies have revealed the importance of viscoelastic effects in polymer-based composites. The viscoelastic effect is particularly significant at elevated temperature/moisture conditions since the matrix material is strongly affected by the environment. The solution of viscoelastic problems in composites was limited to special cases which can be solved by classical lamination theory. A finite element procedure is presented for calculating time-dependent stresses and strains in composite structures with general configurations and complicated boundary conditions. Using this procedure the in-plane and interlaminar stress distributions and histories in notched and unnotched composites were obtained for mechanical and thermal loads. Both two-dimensional and three-dimensional viscoelastic problems are analyzed. The effects of layup orientation and load spectrum on creep response and stress relaxation were also studied.

Lin, K. Y.↗

Modeling Creep-Induced Stress Relaxation at the Leading Edge of SiC/SiC Airfoils

Anticipating the implementation of advanced SiC/SiC composites into internally cooled airfoil components within the turbine section of future aero-propulsion engines, the primary objective of this study was to develop physics-based analytical and finite-element modeling tools to predict the effects of composite creep and stress relaxation at the airfoil leading edges, which will generally experience large thermal gradients at high temperatures. A second objective was to examine how some advanced NASA-developed SiC/SiC systems coated with typical EBC materials would behave as leading edge materials in terms of long-term steady-state operating temperatures. Because of the complexities introduced by mechanical stresses inherent in internally cooled airfoils, a simple cylindrical thin-walled tube model subjected to thermal stresses only is employed for the leading edge, thereby obtaining a best-case scenario for the material behavior. In addition, the SiC/SiC composite materials are assumed to behave as isotropic materials with temperature-dependent viscoelastic creep behavior as measured in-plane on thin-walled panels. Key findings include: (1) without mechanical stresses and for typical airfoil geometries, as heat flux is increased through the leading edge, life-limiting tensile crack formation will occur first in the hoop direction on the inside wall of the leading edge; (2) thermal gradients through all current SiC/SiC systems should be kept below approx.300 F at high temperatures to avoid this cracking; (3) at temperatures near the maximum operating temperatures of advanced SiC/SiC systems, thermal stresses induced by the thermal gradients will beneficially relax with time due to creep; (4) although stress relaxation occurs, the maximum gradient should still not exceed 300oF because of residual tensile stress buildup on the airfoil outer wall during cool-down; and (5) without film cooling and mechanical stresses, the NASA-developed N26 SiC/SiC system with thru-thickness Sylramic-iBN fiber reinforcement and a typical EBC coating has the potential of offering a maximum long-term steady-state operating temperature of approx.3100 F at the surface of the EBC.

Lang, Jerry↗

CFD Growth of 3C-SiC on 4H/6H Mesas

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate non-trivial in-plane lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

Neudeck, Philip G.↗

Coating Development for GRCop-84 Liners for Reusable Launch Vehicles Aided by Modeling Studies

The design of the next generation of reusable launch vehicles calls for using GRCop-84 copper alloy liners based on a composition invented at the NASA Glenn Research Center. Despite its considerable advantage over other copper alloys, it is expected that GRCop-84 will suffer from environmental degradation depending on the type of rocket fuels used and on thermomechanical fatigue. Applying protective coatings on GRCop-84 substrates can minimize or eliminate many of these problems and extend the operational life of the combustion liner. This could increase component reliability, shorten depot maintenance turnaround times, and lower operating costs. Therefore, Glenn is actively pursuing the development of advanced coatings technology for GRCop-84 liners. Technology is being developed in four major areas: (1) new metallic coating compositions, (2) application techniques, (3) test methods, and (4) life prediction design methodology using finite element analysis. The role of finite element analysis in guiding the coating effort is discussed in this report. Thermal analyses were performed at Glenn for different combinations of top- and bondcoat compositions to determine the temperature variation across the coated cross section with the thickness of the top coat. These calculations were conducted for simulated LH2/LO2 booster engine conditions assuming that the bond coat had a constant thickness of 50 m. The preceding graphs show the predicted temperatures at the outer surface of the top coat (hot wall), at the top-coat/bond-coat interface, at the bond-coat/GRCop-84 interface, and at the GRCop-84 cold wall as a function of top-coat thickness for Cu- 26(wt%)Cr top coat (top graph), Ni-17(wt%)Cr-6%Al-0.5%Y top coat and Cu-26%Cr bond coat, and NiAl top coat and Ni bond coat. In all cases, the temperature of the top coat at the hot wall increased with increasing top-coat thickness and with corresponding decreases in the temperatures at the two interfaces and the cold wall. These temperatures are not acutely sensitive to the thermal conductivity of the top coat when it exceeds 25 and 50 W/m/K for low and high heat flux engines. This observation is significant for two reasons. First, several different top-coat compositions can be evaluated as potential protective coatings without loss in the heat-transfer efficiency of the coated system. Second, materials with thermal conductivities less than the critical values of 25 or 50 W/m/K are more likely to act as thermal barrier coatings. The deposition of overlay coatings on GRCop-84 substrates results in the development of residual stresses. The presence of these residual stresses influences the probability of coating spallation, the thermal cycling life, and the fatigue properties of the coated substrate during use. Since it is important to understand how these stresses develop during the vacuum-plasma-spraying coating deposition process, the nature and magnitudes of the cool-down residual stresses were calculated and compared with experimentally determined values across the coated cross section of a disk specimen. The calculations were conducted assuming that the specimen cools down to room temperature from vacuum plasma-spraying temperatures of either 250 or 650 C. The effects of coating the substrate with and without grit blasting were also theoretically examined. The final graph compares the predicted and the experimental results for a GRCop-84 disk coated with about a 50- m-thick Ni bond coat and a 75- to 100- m NiAl top coat, where the curves for NASA-2 assume the presence of a prior residual stress generated by grit blasting under conditions similar to the experimental situation. The predicted cool-down in-plane stresses were compressive in both the NiAl top coat and the Ni bond coat. They were also compressive in the substrate to a depth of about 0.25 mm from the Ni/GRCop-84 interface when the vacuum-plasma-spraying temperature was low. However, using a higher plasma spraying temperaturs likely to leave the substrate under a small tensile stress to counter the compressive stresses in the bond and top coats because of the relaxation of residual stresses generated in the substrate during the grit blasting of its surface prior to spraying. These results suggest that the NiAl and Ni coatings are unlikely to spall after spraying as confirmed by the microstructural observations shown in the following photomicrograph of an as-sprayed specimen. Finally, it is noted that the calculated and experimental results are not in complete agreement, which indicates that both the experimental and modeling techniques need further refinement.

Raj, Sai V.↗

Structure-Property Correlations in Al-Li Alloy Integrally Stiffened Extrusions

The objective of this investigation was to establish the relationship between mechanical property anisotropy, microstructure and crystallographic texture in integrally 'T'-stiffened extruded panels fabricated from the Al-Li alloys 2195, 2098 and 2096. In-plane properties were measured as a function of orientation at two locations in the panels, namely mid-way between (Skin), and directly beneath (Base), the integral 'T' stiffeners. The 2195 extrusion exhibited the best combination of strength and toughness, but was the most anisotropic. The 2098 extrusion exhibited lower strength and comparable toughness, but was more isotropic than 2195. The 2096 extrusion exhibited the lowest strength and poor toughness, but was the most isotropic. All three alloys exhibited highly elongated grain structures and similar location-dependent variations in grain morphology. The textural characteristics comprised a beta + <100> fiber texture, similar to rolled product, in the Skin regions and alpha <111> + <100> fiber texture, comparable to axisymmetric extruded product, in the Base regions. In an attempt to quantitatively correlate texture with yield strength anisotropy, the original 'full constraint' Taylor model and a variant of the 'relaxed constraint' model, explored by Wert et al., were applied to the data. A comparison of the results revealed that the Wert model was consistently more accurate than the Taylor model.

Hales, Stephen J.↗

Recent Results from Epitaxial Growth on Step Free 4H-SiC Mesas

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.

Neudeck, Philip G.↗

Microscopic deformation in a heated unidirectional graphite-epoxy composite

Both in-plane and out-of-plane displacements were determined in patches of the toughened 1962-ERLX epoxy bounded by three closely packed high-modulus P75S graphite fibers. The P75S/1962-ERLX composite was unidirectional, with an average fiber volume of 60 percent. On heating to 44 C from room temperature, the epoxy confined between clusters of three fibers sank in a trough beneath the plane of the fiber ends by 50-120 nm. When the maximum temperature achieved in the prior thermal cycles exceeded 100 C the depth of the trough increased. However, when cycles exceeding 100 C were followed by thermal cycles of decreasing amplitude, chosen to reduce interfacial stress relaxation, the depth of the trough decreased. The results illustrate the feasibility of deducing quantitative data on local deformation from high-resolution strain measurements on cut surfaces.

Morris, W. L.↗