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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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In situ monitoring of the layer thickness during liquid phase electroepitaxy (LPEE) was achieved with a submicron resolution through precise resistance measurements. The new approach to the study and control of LPEE was applied to growth of undoped and Ge-doped GaAs layers. The in situ determined growth kinetics was found to be in excellent agreement with theory.
Nondestructive evaluation (NDE) is required to determine the quality of additive manufactured (AM) parts due to the inherent variability of AM processes. In-situ monitoring technologies endeavor to characterize the process and part quality during production. Qualifying an in-situ monitoring technology requires a proven, causal correlation between indications in the monitoring data and flaws in the finished part.
NASA’s interest in qualifying in situ monitoring methods for certification of AM space hardware
This report summarizes the results of the In situ Monitoring of Crystal Growth Using MEPHISTO (Material por l'Etude des Phenomenes Interessant de la Solidification sur Terre et en Orbite) experiment on USMP-4. The report includes microstructural and compositional data obtained during the first year of the post flight analysis, as well as numerical simulation of the flight experiment. Additional analyses are being continued and will be reported in the near future. The experiments utilized MEPHISTO hardware to study the solidification and melting behavior of bismuth alloyed with 1 at% tin. The experiments involved repeated melting and solidification of three samples, each approximately 90 cm long and 6mm in diameter. Half of each sample also included a 2 mm. diameter growth capillary, to assist in the formation of single grain inside. One sample provided the Seebeck voltage generated during melting and freezing processes. Another one provided temperature data and Peltier pulsed demarcation of the interface shape for post flight analysis. The third sample provided resistance and velocity measurements, as well as additional thermal data. The third sample was also quenched at the end of the mission to preserve the interface composition for post flight determination. A total of more than 45cm of directionally solidified alloy were directionally solidified at the end of the flight for post mission structural and compositional characterization. Metallurgical analysis of the samples has shown that the interfacial kinetics play a key role in controlling the morphological stability of faceted alloys. Substantial differences were observed in the Seebeck signal between the ground-based experiments and the space-based experiments. The temperature gradient in the liquid for the ground-based experiments was also significantly lower than the temperature gradient in the liquid for the space-based experiments. Both of these observations indicate significant influence of liquid convection for the ground-based experiments.
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We have deployed and demonstrated operations of an integrated space in-situ sensorweb for monitoring volcanic activity. This sensorweb includes a network of ground sensors deployed to the Mount Saint Helens volcano as well as the Earth Observing One spacecraft. The ground operations and space operations are interlinked in that ground-based intelligent event detections can cause the space segment to acquire additional data via observation requests and space-based data acquisitions (thermal imagery) can trigger reconfigurations of the ground network to allocate increased bandwidth to areas of the network best situated to observe the activity. The space-based operations are enabled by an automated mission planning and tasking capability which utilizes several Opengeospatial Consortium (OGC) Sensorweb Enablement (SWE) standards which enable acquiring data, alerts, and tasking using web services. The ground-based segment also supports similar protocols to enable seamless tasking and data delivery. The space-based segment also supports onboard development of data products (thermal summary images indicating areas of activity, quicklook context images, and thermal activity alerts). These onboard developed products have reduced data volume (compared to the complete images) which enables them to be transmitted to the ground more rapidly in engineering channels.
Crystal growth from the vapor phase continues to play a significant role in the production of II-VI semiconductor compounds (ZnO, ZnTe, CdTe, etc.) and SiC. As compared to melt growth methods (where available) the advantages are: (1) lower growth temperature(s); (2) reduction in defect concentration; (3) additional purification; and (4) enhanced crystal perfection. A powerful tool in determining the mechanism of PVT is microgravity. Under normal gravity conditions the transport mechanism is a superposition of diffusive and convective fluxes. Microgravity offers the possibility of studying the transport properties without the influence of convective effects. Research on the crystal growth of ZnSe by PVT (P.I.: Su of NASA/MSFC) will help to clarify the effects of convection on crystal growth. A crystal growth furnace with in-situ and real time optical monitoring capabilities was constructed and used to monitor the vapor composition and growing crystal surface morphology during the PVT growth of ZnSe. Using photoluminescence and SIMS, ex-situ, the incorporation of point defects (Zn vacancy) and impurities was found to be correlated to the gravity vector due to the influence of the convective flow. A summary of the results to date will be presented.
The scope of this dissertation is to develop and apply x ray attenuation measurement systems that are capable of: (1) characterizing density variations in high-temperature materials, e.g., monolithic ceramics, ceramic and intermetallic matrix composites, and (2) noninvasively monitoring damage accumulation and failure sequences in ceramic matrix composites under room temperature tensile testing. This dissertation results in the development of: (1) a point scan digital radiography system, and (2) an in-situ x ray material testing system. Radiographic evaluation before, during, and after loading shows the effect of preexisting volume flaws on the fracture behavior of composites. Results show that x ray film radiography can monitor damage accumulation during tensile loading. Matrix cracking, fiber matrix debonding, fiber bridging, and fiber pullout are imaged throughout the tensile loading of the specimens. Further in-situ radiography is found to be a practical technique for estimating interfacial shear strength between the silicon carbide fibers and the reaction bonded silicon nitride matrix. It is concluded that pretest, in-situ, and post test x ray imaging can provide for greater understanding of ceramic matrix composite mechanical behavior.
This experiment flew on STS-62 and is the continuation of a collaborative US-French study of the process of crystal formation. Knowledge from this experiment will support the development of techniques to grow higher quality semiconductor crystals on Earth.
Experiments were carried out to study the morphological stability of Bi- 1 atomic % Sn alloys using the MEPHISTO directional solidification apparatus aboard Space Shuttle Columbia (STS-87, launched Nov. 19, 1997) and in ground-based studies. The Seebeck signal and temperature measurements indicate that convection was significant for ground-based studies. In the space-based experiments, interface breakdown was observed at growth velocities of 6.7, 27, and 40 microns/sec, but not at 1.8 and 3.3 microns/sec.
Experiments were carried out to study the morphological stability of Bi-1atomic% Sn alloys using the MEPHISTO directional solidification apparatus aboard Space Shuttle Columbia (STS-87, launched November 19, 1997). The research program involved collaboration of the University of Florida, Centre National d'Etudes Spatiales (France), NASA/Glenn Research Center, the National Institute of Standards and Technology, and the University of New South Wales (Australia). The experiments made use of the Seebeck technique to measure the interface temperature, the resistance change across the sample for determination of the interface velocity, and Peltier current pulsing for demarcation of the interface shape. These data were obtained in real-time during various melting/solidification cycles, and the experiments were controlled via telecommands. The Seebeck signal and temperature measurements in the space experiments, as well as morphological behavior of the solid/liquid interface, were found to be significantly different than those obtained from ground-based studies. For the space-based experiments, interface breakdown was observed at growth velocities of 6.7, 27, and 40 micrometers/s, but not at 1.8 and 3.3 micrometers/s. The results further indicate that the morphological stability threshold for some grain orientations is significantly enhanced, resulting in a staggered planar to cellular transition front. This report summarizes some of these findings.
This reports on the MEPHISTO-4 experiment on the Space Shuttle Columbia, STS-87, November 19-December 5, 1997. Involved were NASA; the University of Florida at Gainesville; groups from France that developed and built the furnace; the National Institute of Standards and Technology; The University of New South Wales, Australia; and Purdue University. This was a solidification study in which three long rods of Bismuth- 1 at.% Tin were directionally solidified. The goals were to solidify in an environment free of natural convection; to determine the relationship among solidification growth velocity, growth mode, and temperature; and determine the diffusivity of Sn in Bi. The flight samples grew with a planar solid/liquid interface at velocities less than 3.4 gm/s, and cellular growth was present at velocities greater than 6.7 um/s; grain orientation influenced the planar to cellular transition. The temperature gradient in the liquid was 204 K/cm. The s/l interface was flat with slight concavity. Diffusion-dominated conditions were present during MEPHISTO-4. The Seebeck technique was used to determine the s/I interface temperature during growth, however, to date, analysis of the Seebeck results has not yielded a reliable measurement of the interface temperature. The partition coefficient for Bi alloyed with Sn was measured, k = 0.029.
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