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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗
DOE OSTI2022

Influence of twist pitch on hysteretic losses and transport J c in overpressure processed high J c Bi-2212 round wires

Abstract Bi-2212 is the only high field, high-temperature superconductor (HTS) available in the macroscopically isotropic, multifilament high J c round wire (RW) form capable of generating high uniformity fields with minimum-screening current errors. However, the heat treatment that enables impressively high J c (4.2 K, 30 T) values that can attain ∼5000 A mm −2 also produces significant filament bonding (bridging). Filament bridging appears to significantly enhance hysteretic losses of the filaments themselves by coupling neighboring, nominally independent filaments, enabling shielding currents to flow across multiple filaments as though they were one filament of much larger diameter. Wire twisting can be employed to reduce filament-to-filament eddy current coupling losses due to induced currents flowing across the matrix, but twisting is less effective in reducing increased losses from bridging. Here, we compare the twist-pitch dependence of the losses of overpressure processed (OP) high J c Bi-2212 RWs with partially bridged filaments to those found in OP Bi-2212 RWs with discrete, not-bridged filaments. We show that filament sub-bundles in standard, partially-bridged wires that have some superconducting connections between filaments can exhibit significant coupling (much larger effective filament diameter), but twisting still reduces their hysteretic losses to values close to or below the ITER Nb 3 Sn wire loss specification, even though Bi-2212 wires have significantly larger J c values. Although it has been reported that twisting can reduce wire J c by damaging filaments, we found no reduction in transport J c , even for nominal twist pitches of 12 mm in 0.8 mm diameter wires. Evaluation of more-recent, higher J c Engi-Mat powder wires showed that their reduced filament bridging and improved longitudinal connectivity significantly improved transport J c and reduced the J c normalized losses, signaling that J c can be further improved without commensurate increase in losses. This important result strengthens the argument for production of high field, low loss HTS magnets made with Bi-2212 RWs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Synaptic Functionality and Neuromorphic Information Processing in Membrane Ion Channel Junctions

The human brain performs complex memory and computational tasks with high energy efficiency by regulating ion transport through membrane channels. These signaling mechanisms have been inspiring the development of nanofluidic memristors that emulate synaptic behavior. Here, in this study, we describe a membrane ion channel synapse (MICS), constructed from aqueous droplets linked by gramicidin A channels, that achieves neuromorphic functionality. MICS exhibits memristive ion transport with hysteretic current–voltage behavior arising from voltage-dependent channel formation and ion transport dynamics. MICS emulates a range of synaptic behaviors including associative learning. We further demonstrate its application in reservoir computing by performing handwritten digit classification and tic-tac-toe game and explore the system parameters that improve the computational performance. This droplet-based biomimetic synapse offers a potentially scalable and energy-efficient platform for next-generation neuromorphic computing systems.

Droplet interface bilayer↗
DOE OSTI2026

Ion transport through reconfigurable nanoparticle-surfactant stabilized droplet interface bilayers

Despite their adaptability and mechanical stability, Pickering emulsions based on the interfacial assembly of colloidal particles have not found use in iontronics, since the dense interfacial packing of micron-sized particles precludes functional connectivity between two droplets. In this work, we introduce a chemically reconfigurable droplet interface bilayer (DIB) platform based on the interfacial assembly of nanoparticle-surfactants (NPSs) that enables spontaneous or field-induced formation of ion-conducting nanochannels, eliminating the need of ionophores or nanochannel-forming proteins. These nanoscopic channels emerge from packing defects in the jammed interfacial assemblies of the charged NPSs and support size and charge selective, hysteretic ion transport governed by interfacial electrostatics and dimensional constraints. The NPS-DIBs show short-term and long-term plasticity, hallmarks of neuromorphic behavior, that are mediated by the structural and chemical design of the bilayer. These assemblies establish a versatile, chemically tunable platform that couples soft-matter mechanics with interfacial ionic functionality, offering a robust foundation for soft iontronic systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Anodized Aluminum Oxide Membrane Ionic Memristors

Memory effect in ion transport (IT) at the solid–solution interface is uniquely attractive in that the conductance depends on or “memorizes” the previous states. Hysteretic and rectified transport properties offer exciting potential to developing advanced iontronics and neuromorphic functions, improving the efficiency of energy conversion and electrochemical processes, and overcoming the selectivity-throughput bottleneck in the enrichment of low abundant species for environment- and energy-friendly separations, among others. Herein, memory effects are discovered in the rectified electrokinetic IT through anodized aluminum oxide (AAO) membranes containing densely packed highly ordered nanochannels (10 10 per cm 2 ). Characteristic memristor responses of pinched current–potential loops are resolved in voltammetric experiments and successfully reproduced through finite element simulation. Excitatory and inhibitory conductance states are shown to arise from the enrichment and depletion of mobile charge carriers. Structurewise, the transport symmetry is broken by the barrier oxide layer (BOL) on the one end of the cylindrical nanochannels across the AAO membranes. Charge selectivity is attributed to the gradient(s) of the space charge density across the BOL characterized by depth profiling via X-ray photoelectron spectroscopy analysis. The space charge gradient(s) overcomes the fundamental limitation of widely exploited surface charge effects to enable intense rectification and hysteresis prevailing at very high ionic concentrations up to 1–2 M. A new strategy is developed for controlling the preferential IT direction and selectivity via counterion intercalation and extraction/exchange. Mechanistic understanding is further confirmed through parameter variations such as potential scan rate and ionic strength, which also demonstrates convenient controls of the related functions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Field Induced Density Wave in a Kagome Superconductor

On the kagome lattice, electrons benefit from the simultaneous presence of band topology, flat electronic bands, and Van Hove singularities, forming competing or cooperating orders. Understanding the interrelation between these distinct order parameters remains a significant challenge, leaving much of the associated physics unexplored. In the kagome superconductor KV 3 Sb 5 , which exhibits a charge density wave (CDW) state below T ≃ 78 K, we uncover an unpredicted field-induced phase transition below 6 K. The observed transition is marked by a hysteretic anomaly in the resistivity, nonlinear electrical transport, and a change in the symmetry of the electronic response as probed via the angular dependence of the magnetoresistivity. These observations surprisingly suggest the emergence of an unanticipated broken symmetry state coexisting with the original CDW. To understand this experimental observation, we developed a theoretical minimal model for the normal state inside the high-temperature parent CDW phase, where an incommensurate CDW order emerges as an instability subleading to superconductivity. Here, the incommensurate CDW emerges when superconducting fluctuations become fully suppressed by large magnetic fields. Our results suggest that, in kagome superconductors, quantum states can either coexist or are nearly degenerate in energy, indicating that these are rich platforms to expose new correlated phenomena.

Charge density waves↗
DOE OSTI2024

Magnetism in the axion insulator candidate Eu 5 In 2 Sb 6

Eu 5 In 2 Sb 6 is a member of a family of orthorhombic nonsymmorphic rare-earth intermetallics that combines large localized magnetic moments and itinerant exchange with a low carrier density and perpendicular glide planes. This may result in special topological crystalline (wallpaper fermion) or axion insulating phases. Recent studies of Eu 5 In 2 Sb 6 single crystals have revealed colossal negative magnetoresistance and multiple magnetic phase transitions. Here, we clarify this ordering process using neutron scattering, resonant elastic x-ray scattering, muon spin-rotation, and magnetometry. The nonsymmorphic and multisite character of Eu 5 In 2 Sb 6 results in coplanar noncollinear magnetic structures with an Ising-like net magnetization along the a axis. A reordering transition, attributable to competing ferro- and antiferromagnetic couplings, manifests as the onset of a second commensurate Fourier component. In the absence of spatially resolved probes, the experimental evidence for this low-temperature state can be interpreted either as an unusual double- q structure or in a phase separation scenario. The net magnetization produces variable anisotropic hysteretic effects which also couple to charge transport. The implied potential for functional domain physics and topological transport suggests that this structural family may be a promising platform to implement concepts of topological antiferromagnetic spintronics. Published by the American Physical Society 2024

Rahn, M. C. (ORCID:0000000174038288)↗
DOE OSTI2023

Non-linear Wire Rope Isolator Model to Enhance Transportation Simulation of Fragile Equipment

Abstract Introduction Wire rope isolators are often used as means of vibration isolation for the transportation of fragile machine equipment. When deployed as suspension systems in a transportation scenario, a simple spring–damper model is often used to predict the dynamic loads that act on the structure being transported. However, this simple model has proved to be too simplistic to be used in the development of an accurate numerical model that can predict the vibration levels experienced by the inner components of fragile equipment during its transportation. This paper describes the experimental tests conducted on a wire rope isolator used for the transportation of the prototype SSR1 cryomodule. Materials and methods A hysteretic Bouc–Wen model has been used to analytically describe the force–deformation relationship of the wire rope isolators. The developed model of the isolator has been implemented in a larger model to simulate the actual transportation of the prototype SSR1 cryomodule, a section of the new PIP-II linear accelerator under construction at Fermilab. A series of multibody dynamic simulations with rigid and flexible components was used to numerically determine the acceleration of some critical components. Results and conclusions An actual experimental transportation was simulated using two numerical models: the developed Bouc–Wen model and a conventional spring–damper model. It is shown how the Bouc–Wen formulation of the isolator characteristics drastically improves the correspondence between experimental and simulated results if compared to a spring–damper model, especially in the range of 0–30 Hz which is the most critical for transportation problems.

42 ENGINEERING↗
DOE OSTI2022

Unconventional Hysteretic Transition in a Charge Density Wave

Hysteresis underlies a large number of phase transitions in solids, giving rise to exotic metastable states that are otherwise inaccessible. Here, we report an unconventional hysteretic transition in a quasi-2D material, EuTe 4 . By combining transport, photoemission, diffraction, and x-ray absorption measurements, we observe that the hysteresis loop has a temperature width of more than 400 K, setting a record among crystalline solids. The transition has an origin distinct from known mechanisms, lying entirely within the incommensurate charge density wave (CDW) phase of EuTe 4 with no change in the CDW modulation periodicity. We interpret the hysteresis as an unusual switching of the relative CDW phases in different layers, a phenomenon unique to quasi-2D compounds that is not present in either purely 2D or strongly coupled 3D systems. Furthermore, our findings challenge the established theories on metastable states in density wave systems, pushing the boundary of understanding hysteretic transitions in a broken-symmetry state.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Iridium valence variation and carrier sign tuning in ( Ca , Ba ) x La 2 – x CuIrO 6 double perovskites

Here, we report the structure and properties of ( Ca , Ba ) x La 2 – x CuIrO 6 . The rock-salt double perovskite structure goes through a P 1 ¯ to P 2 1 / n phase transition with increasing Ba content but not with Ca content. In both cases, the Ir ion is oxidized from 4 + to 5 + with increasing substitution. Transport and magnetic properties measurements reveal that all compositions are insulating with hysteretic spin-freezing magnetic behavior. Seebeck coefficient measurements reveal a large thermopower change from + 176 μ V /K in La 2 CuIrO 6 to – 223 μ V /K with increasing Ba content in Ba x La 2 – x CuIrO 6 . This behavior is modeled well by the Heikes formula for correlated hopping conduction. ( Ca , Ba ) x La 2 – x CuIrO 6 provides a model system for investigations of other systems with similar carrier sign tuning, with applications toward semiconductors and thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unconventional ferroelectricity in moiré heterostructures

Although all matter is composed of component particles, these particles can arrange themselves in various ways, giving rise to emergent phenomena that can be surprisingly rich and often cannot be understood by studying only the individual constituents. Discovering and understanding novel forms of emergence in quantum materials, especially in those where multiple degrees of freedom or energy scales are delicately balanced, is of great fundamental interest to condensed matter research. In this work, we report on the surprising observation of emergent ferroelectricity in graphene-based moiré heterostructures. Ferroelectric materials exhibit an electrically-switchable electric dipole, which is usually formed by spatial separation between the averaged centers of positive and negative charge within the unit cell. Based on this, it is difficult to imagine graphene, a material composed only of carbon atoms, exhibiting ferroelectricity. However, in this work, we indeed realize switchable ferroelectricity in Bernal-stacked bilayer graphene sandwiched between two hexagonal boron nitride (BN) layers. By introducing a moiré superlattice potential (via aligning bilayer graphene with the top and/or bottom BN crystals), we observe prominent and robust hysteretic behavior of the graphene resistance with an externally applied out-of-plane displacement field. Our systematic transport measurements reveal rich and striking response as a function of displacement field and electron filling, not previously observed in any 2D systems, and beyond the framework of conventional ferroelectrics. We further directly probe the ferroelectric polarization through a nonlocal monolayer graphene sensor. Our results suggest an unconventional, odd parity electronic ordering in the bilayer graphene/BN moiré system. This emergent moiré ferroelectricity may pave the way for ultrafast, programmable, and atomically thin carbon-based memory devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Thermal hysteretic behavior and negative magnetoresistance in the charge density wave material EuTe 4

EuTe 4 is a van der Waals material exhibiting a charge density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this paper, we systematically study the electronic structure and transport properties of EuTe 4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance (MR) measurements, and scanning tunneling microscopy (STM). Here, we observe a CDW gap of ~ 200meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. The ARPES intensity near the Fermi level shows large thermal hysteretic behavior, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteretic effect. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior. Interestingly, we reveal a large negative MR at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our results shed light on the understanding of magnetic, transport, and electronic properties of EuTe 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Charge Density Wave Order and Electronic Phase Transitions in a Dilute d ‐Band Semiconductor

Abstract As one of the most fundamental physical phenomena, charge density wave (CDW) order predominantly occurs in metallic systems such as quasi‐1D metals, doped cuprates, and transition metal dichalcogenides, where it is well understood in terms of Fermi surface nesting and electron–phonon coupling mechanisms. On the other hand, CDW phenomena in semiconducting systems, particularly at the low carrier concentration limit, are less common and feature intricate characteristics, which often necessitate the exploration of novel mechanisms, such as electron–hole coupling or Mott physics, to explain. In this study, an approach combining electrical transport, synchrotron X‐ray diffraction, and density‐functional theory calculations is used to investigate CDW order and a series of hysteretic phase transitions in a dilute d ‐band semiconductor, BaTiS 3 . These experimental and theoretical findings suggest that the observed CDW order and phase transitions in BaTiS 3 may be attributed to both electron–phonon coupling and non‐negligible electron–electron interactions in the system. This work highlights BaTiS 3 as a unique platform to explore CDW physics and novel electronic phases in the dilute filling limit and opens new opportunities for developing novel electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Quantum oscillations and transport properties of layered single-crystal SrCu 4 ⁢As 2

Here, we report a systematic investigation of the physical properties and Fermi-surface topology of layered single-crystal SrCu 4⁢ As 2 using electrical transport, magnetotransport, and quantum-oscillation experiments plus band-structure calculations. The temperature-dependent electrical resistivity reveals a hysteretic phase transition at 𝑇 𝑃 =59 K, most likely associated with a structural change. Hall resistivity data suggest a marked change in the average hole density resulting from the latter phase transition near 𝑇 𝑃 . A large, linear, and nonsaturating magnetoresistance is observed at low temperatures in SrCu 4 ⁢As 2 , likely attributable to the multipocket Fermi surface. Quantum-oscillation data measured in magnetic fields of up to 60 T show several oscillation frequencies exhibiting low effective masses, indicating the presence of Dirac-like band dispersion in SrCu 4 ⁢As 2 , as suggested by the band structure calculations.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Harnessing the Second-Order Metal−Insulator Transition for Neuromorphic Computing

Vanadium oxides are widely studied phase change materials for brain-inspired computing architectures. Systems like VO 2 and V 2 O 3 exhibit first-order metal−insulator transitions (MITs) with hysteresis and percolative switching, increasing stochasticity and device variability. Here, we focus on the less explored Magnéli phase V 4 O 7 , which undergoes a continuous, non-hysteretic, second-order MIT. This surprisingly enables highly reproducible volatile resistive switching in spiking-neuron-type devices. We synthesize V 4 O 7 films, characterize their structural and transport properties, and demonstrate voltage and current-driven threshold switching with electrothermal feedback. In a Pearson–Anson oscillator, V 4 O 7 devices produce stable, tunable spiking across 20–200 kHz, with consistent operation among multiple devices. We introduce a numerical analog leaky-integrate-and-fire (aLIF) model that captures waveform shapes and their dependence on load resistance, temperature, and voltage. Furthermore, these findings suggest that second-order MIT materials like V 4 O 7 are promising for deterministic, scalable spiking neuron arrays for neuromorphic computing.

V4O7↗
DOE OSTI2025

A temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth microbridges for X-ray transition-edge sensor absorbers

This study investigates the temperature-induced hysteretic behavior of resistivity and magnetoresistance in electrodeposited bismuth films, with a focus on their application as absorbers in transition-edge sensors (TESs) for X-ray detection. Through a series of resistivity versus temperature measurements from room temperature to a few Kelvin, we explore the change in the conductive behavior of bismuth electrodeposited on various substrates. Our findings show for the first time both hysteretic and irreversible changes in resistivity as a function of temperature. Further, magnetoresistance measurements reveal notable variations in resistance behavior under different magnetic fields, highlighting the impact of magnetic fields on these films’ electronic transport properties, with an indication of potential weak anti-localization effects at the lowest temperatures. This study not only provides a deeper understanding of bismuth’s conductivity characteristics at low temperatures but also sheds light on the practical implications for developing more effective TESs for synchrotron X-ray facilities.

42 ENGINEERING↗
DOE OSTI2022

Nonvolatile Electric Field Control of Thermal Magnons in the Absence of an Applied Magnetic Field

Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong magnetic field to allow for deterministic control of magnetic order. Here, we make use of the well-known multiferroic magnetoelectric, BiFeO 3 , to demonstrate nonvolatile, hysteretic, electric-field control of thermally excited magnon current in the absence of an applied magnetic field. The findings in this work are an important step toward magnon-based devices, where electric-field-only control is highly desirable.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism

We report the growth of the intrinsic magnetic topological system MnTe ( Bi 2 Te 3 ) n by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n = 1 phase Mn Bi 2 Te 4 with 2.0 < Bi : Mn < 2.6 at 225°C. In this work, the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn≥4.5) it is found that the n = 2 Mn Bi 4 Te 7 phase is stabilized. Transport measurements indicate that the Mn Bi 2 Te 4 and Mn Bi 4 Te 7 undergo magnetic transitions around 25 and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped Mn Bi 2 Te 4 . Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena.

36 MATERIALS SCIENCE↗