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At least 19 records

Efficient Size-Dependent Hot Electron Transfer from Au to TiO 2 Nanoparticles

Harvesting of plasmon-induced hot carriers at the metal/semiconductor interface offers a promising and innovative avenue for solar energy conversion. However, their practical implementation is often hampered by their limited efficiencies. Herein, we have demonstrated a highly efficient plasmonic hot electron transfer with a quantum efficiency (QE) of up to 57 ± 4% from 5.25 nm Au nanoparticles (NPs) to TiO 2 films under 400 nm ultrafast laser excitation. The observed hot electron transfer QEs decrease at larger particle sizes, to 20% for 9.1 nm Au, and show negligible changes with excitation wavelengths at 400, 500, and 600 nm. Analysis of the size and excitation wavelength dependent hot electron transfer QEs suggests they contain contributions of interband absorption, indirect plasmon-induced hot electron transfer (PHET), and direct plasmon-induced interfacial charge transfer transition (PICTT) pathways, and QEs of all three pathways increase at smaller Au size. Our result suggests that reducing plasmon particle sizes is a promising approach for efficient plasmonic hot-carrier extraction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Highly Efficient Plasmon Induced Hot-Electron Transfer at Ag/TiO 2 Interface

Plasmon induced hot carrier transfer is a promising novel approach for solar energy conversion, but its practical application is often hindered by its low efficiency. This work demonstrates an unprecedented quantum efficiency of plasmonic hot-electron transfer of up to 53 ± 2% from 1.7 nm silver nanoparticles to anatase nanoporous TiOsub>2 films at 400 nm excitation. This efficient hot-electron transfer consists of contributions of both hot electrons generated by plasmon decay through exciting Ag intraband transitions and Ag-to-TiO 2 interfacial charge-transfer transitions. The efficiencies of both pathways increase at smaller Ag particle sizes from 5.9 to 1.7 nm, suggesting that decreasing particle sizes is a promising way toward efficient plasmonic hot-carrier extraction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Efficient Hot Electron Transfer from Small Au Nanoparticles

Many important chemical transformations enabled by plasmonic hot carrier photocatalysis have been reported, although their efficiencies are often too low for practical applications. Here, we examine how the efficiency of plasmon-induced hot electron transfer depends on the Au particle size in Au-tipped CdS nanorods. We show that with decreasing Au size, the plasmon width increases due to enhanced surface damping contributions. The excitation of Au nanoparticles leads to an instrument response time-limited ultrafast hot electron transfer process to CdS ($\ll$140 fs). The quantum efficiency of this process increases from ~1% to ~18% as the particle size decreases from 5.5 ± 1.1 to 1.6 ± 0.5 nm due to both enhanced hot electron generation and transfer efficiencies in small Au particles. Our finding suggests that decreasing plasmonic particle size is an effective approach for improving plasmon-induced hot carrier transfer efficiency and provides important insight for the rational improvement of plasmonic hot carrier-based devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.

36 MATERIALS SCIENCE↗

Direct and Indirect Interfacial Electron Transfer at a Plasmonic p-Cu 7 S 4 /CdS Heterojunction

Plasmonic semiconductors exhibit significant potential for harvesting near-IR solar energy, although their mechanisms of plasmon-induced hot electron transfer (HET) are poorly understood. We report a transient absorption study of plasmon-induced HET in p-Cu 7 S 4 /CdS type II heterojunctions. Near-IR excitation of the p-Cu 7 S 4 plasmon band at ~1400 nm leads to ultrafast HET into the CdS conduction band with a time constant of <150 fs and a quantum efficiency of ~0.054%. The injected hot electrons remain in CdS with an amplitude-weighted average lifetime of 1.9 ± 0.5 ns, significantly longer than that in Au/CdS heterostructures, suggesting that plasmonic semiconductors can slow down charge recombination due to the presence of a bandgap. The excited near-IR plasmon does not decay by coupling to the interfacial charge transfer transition, likely due to its energy mismatch. This study provides a detailed mechanistic understanding and possible directions for improving plasmonic HET in plasmonic semiconductor heterojunctions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Probing Ultrafast Charge Transfer Dynamics in Heterostructured Nanomaterials

The increasing demand for renewable and low‐cost energy has triggered a vast amount of research aimed at developing, characterizing and optimizing materials that can efficiently convert sun light into useful chemical energy in the form of electricity or chemical fuels. So‐ called quantum dot sensitized solar cell (QDSC) materials have gained much attention in recent years based on the advantageous physicochemical properties of semiconducting quantum dots (QDs) as sensitizers, as well as their promising potential to increase the conversion efficiency beyond the Shockley‐Queisser limit of ∼33% by making use of hot‐electron transfer (HET) routes and multiple exciton generation (MEG). By finely tuning the size of the QDs, the band gap can be carefully aligned to the metal oxide (MO) conduction band such that charge transfer from the photoexcited QD is thermodynamically favorable.

14 SOLAR ENERGY↗

Pulsed studies of intervalley transfer in Al 0.35 In 0.65 As: A paradigm for valley photovoltaics

Al 0.35 In 0.65 As is a direct semiconductor whose multivalley conduction-band structure has been proposed for use in so-called valley photovoltaics. In such hot-carrier solar cells, energetic (hot) photocarriers are stored in satellite valleys away from the Γ point, allowing them to be extracted prior to thermalization and to thereby increase power-conversion efficiency. While prior theoretical work has highlighted the potential of Al 0.35 In 0.65 As—a widely used barrier material in electronic and optoelectronic devices, for use in valley photovoltaics—surprisingly little is known about its electrical properties, especially how these are impacted by the application of high fields. In this work, we therefore undertake a detailed characterization of the electrical properties of Te-doped ($\textit{n}$-type) Al 0.35 In 0.65 As, over wide ranges of temperature (3–400 K) and electric field (<50 kV/cm). Using pulsed measurements to suppress the influence of Joule heating, we reveal the presence of clear negative-differential conductance in the current-voltage characteristics of the films, suggestive of the intervalley transfer of hot electrons. This conclusion is supported by the results of ensemble Monte Carlo simulations of the hot-carrier action, which confirm the connection of the observed negative-differential conductance to hot-electron transfer from the conduction-band (Γ) minimum, to the side valleys at the $\textit{L}$ point. Further, the quantitative features of the experimentally determined velocity-field curves are found to be in good agreement with the results of these calculations, providing further confidence in the role of the implied intervalley transfer mechanism. Overall, these results confirm the excellent potential of Al 0.35 In 0.65 As for use as the absorber material in hot-carrier solar cell technology.

36 MATERIALS SCIENCE↗

Light Induced Processes in CsPbBr 3 –Au Hybrid Nanocrystals: Electron Transfer and Expulsion of Au

Semiconductor–metal heterostructures such as CsPbBr 3 –Au are useful in photocatalysis. When Au nanoparticles are deposited on the CsPbBr 3 nanocrystal surface, they efficiently quench the photoluminescence of the semiconductor. This process has been studied by femtosecond transient absorption spectroscopy measurements, which indicate that electron transfer to the Au nanoparticles occurs from both hot and relaxed electrons in the conduction band of CsPbBr 3 . The electron transfer rate constant is much larger for the hot electrons compared to the relaxed electrons. Under steady state photoirradiation of CsPbBr 3 –Au heterostructure, the photogenerated electrons from the excited CsPbBr 3 nanocrystals continue to charge the Au nanoparticles. After sufficient irradiation, the gold nanoparticles dissociate from the CsPbBr 3 surface and aggregate into larger size gold nanoparticles. The expulsion of gold nanoparticles restores the original luminescence behavior of CsPbBr 3 nanocrystals. The spectroscopic and morphological studies provide insight into the expulsion of gold nanoparticles in photoirradiated CsPbBr 3 –Au heterostructures.

14 SOLAR ENERGY↗

Connectivity between Static Field and Continuous Wave Field Effects on Excitation-Induced H 2 Activation

Due to the tremendous applications of the plasmon resonance excitation process, such as improvements in catalytic efficiency due to plasmonic enhancement and/or hot-electron processes, understanding the mechanism behind these processes has become a popular topic in recent years. In this work, we focus on unraveling the mechanism of excitation-induced H 2 activation using a simplified triangular Au 6 /Ag 6 cluster to investigate the effects of the electric field on electron redistribution and bond activation. We applied both static and continuous wave fields to investigate how these fields affect the systems. Geometrical changes (such as bond lengthening), molecular orbital reordering (affecting the relative energies of orbitals corresponding to hot-electron and charge-transfer excited states), and electronic charge redistribution between the cluster and the adsorbate occur upon application of a static electric field. To study H 2 activation, we apply Ehrenfest dynamics with real-time time-dependent density functional theory and examine how different excitation frequencies and polarizations affect bond activation. Moreover, electron-only dynamics are examined with real-time time-dependent density functional theory, and the time-dependent variations in the orbital populations and electronic transitions provide information about the excitation and relaxation processes of hot electrons with applied electric fields. Here, the static field results represent structures that can be accessed during the evolution of the systems when applying continuous wave fields. Through these studies, the effects of static and continuous wave field effects on plasmon-induced H 2 activation can be understood.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Additive manufacturing enabled hot-wire apparatus with suppressed edge effect error

This invention describes a method of structuring a metal or metal coated wire in a manner such that it provides enhanced accuracy when used in a hot-wire apparatus for transient thermal conductivity measurements for low-density materials. This is accomplished by using a diameter varying structure with two ends of the wire of sufficiently small diameter that the edge-effect induced error can be reduced by generating a more uniform temperature profile along the wire, whereas in conventional apparatus the temperatures always drop at the ends of a finite wire due to its ends that are being cooled by the wire-supports.

36 MATERIALS SCIENCE↗

Revealing the Phonon Bottleneck Limit in Negatively Charged CdS Quantum Dots

The capture of photoexcited hot electrons in semiconductors before they lose their excess energy to cooling is a long-standing goal in photon energy conversion. Semiconductor nanocrystals have large electron energy spacings that are expected to slow down electron relaxation by phonon emission, but hot electrons in photoexcited nanocrystals, nevertheless, cool rapidly by energy transfer to holes. This makes the intrinsic phonon-bottleneck-limited hot electron lifetime in nanocrystals elusive. For this work, we used a combination of theory and experiments to probe the hot-electron dynamics of negatively charged cadmium sulfide (CdS) colloidal quantum dots (QDs) in the absence of holes. Experiments found that these hot electrons cooled on a 100 ps time scale. Theoretical simulations predicted that pure phonon-bottleneck-limited hot electron cooling occurs on a similar time scale. This similarity suggests that the experimental measurements reflect the upper limit on the hot-electron lifetimes in these CdS QDs and the lower limit on the rates of processes that can harvest those hot electrons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Vibronic Excitons and Conical Intersections in Semiconductor Quantum Dots

Surface defects and organic surface-capping ligands affect the photoluminescence properties of semiconductor quantum dots (QDs) by altering the rates of competing nonradiative relaxation processes. In this study, broadband two-dimensional electronic spectroscopy reveals that absorption of light by QDs prepares vibronic excitons, excited states derived from quantum coherent mixing of the core electronic and ligand vibrational states. Rapidly damped coherent wavepacket motions of the ligands are observed during hot-carrier cooling, with vibronic coherence transferred to the photoluminescent state. Furthermore, these findings suggest a many-electron, molecular theory for the electronic structure of QDs, which is supported by calculations of the structures of conical intersections between the exciton potential surfaces of a small ammonia-passivated model CdSe nanoparticle.

36 MATERIALS SCIENCE↗

Effects of a magnetic field on hot electron generation from laser-plasma instabilities

We performed two-dimensional simulations of turbulent laser-plasma instabilities in the presence and absence of external magnetic fields using the Laser Plasma Simulation Environment (LPSE) code. The results demonstrate that, in the presence of a magnetic field, the transition from ballistic to gyrating electron motion enhances the energy transfer from electron plasma waves to the electron population. Although stronger magnetic fields produce a larger population of hot electrons, these electrons tend to remain confined near the quarter-critical density, where the instabilities also localize, thereby reducing the potential for hot electron transport deeper into the target. Additionally, we present a scaling analysis that quantifies hot electron generation as a function of plasma electron temperature, density scale length, and applied magnetic field strength. These findings may have important applications for controlling hot electron flux and mitigating preheat in inertial confinement fusion targets.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Hot carrier extraction from 2D semiconductor photoelectrodes

Hot carrier-based energy conversion systems could double the efficiency of conventional solar energy technology or drive photochemical reactions that would not be possible using fully thermalized, “cool” carriers, but current strategies require expensive multijunction architectures. Using an unprecedented combination of photoelectrochemical and in situ transient absorption spectroscopy measurements, we demonstrate ultrafast (<50 fs) hot exciton and free carrier extraction under applied bias in a proof-of-concept photoelectrochemical solar cell made from earth-abundant and potentially inexpensive monolayer (ML) MoS 2 . Our approach facilitates ultrathin 7 Å charge transport distances over 1 cm 2 areas by intimately coupling ML-MoS 2 to an electron-selective solid contact and a hole-selective electrolyte contact. Our theoretical investigations of the spatial distribution of exciton states suggest greater electronic coupling between hot exciton states located on peripheral S atoms and neighboring contacts likely facilitates ultrafast charge transfer. Our work delineates future two-dimensional (2D) semiconductor design strategies for practical implementation in ultrathin photovoltaic and solar fuel applications.

2D materials↗

Electron-ion equilibration in superheated gold

Electron-ion equilibration dynamics in samples driven into superheated states with multi-eV electron temperatures represent a fundamental process in nonequilibrium physics. A clear picture of the evolving ion temperature is essential for understanding the strength of the electron-ion coupling. However, direct, model-independent measurements of the ion temperature in laser-irradiated samples have remained experimentally elusive. Using inelastic X-ray scattering with meV-resolution in gold samples, the ion response to ultrafast heating by the hot electrons can be resolved, quantifying the electron-ion equilibration dynamics. We report measurements revealing a strongly enhanced energy transfer rate compared to that in weakly excited gold. Moreover, we obtain a quasi-constant electron-ion coupling at the highly elevated electron temperatures. These results place new constraints on electron-ion energy transfer in warm dense matter and establish a path toward quantitative benchmarking of models for nonequilibrium dynamics.

Griffin, Travis D. [Univ. of Nevada, Reno, NV (Uni↗

Atomic-Level, Energy-Conversion Heat Transfer

Abstract Heat is stored in quanta of kinetic and potential energies in matter. The temperature represents the equilibrium and excited occupation (boson) of these energy conditions. Temporal and spatial temperature variations and heat transfer are associated with the kinetics of these equilibrium excitations. During energy-conversion (between electron and phonon systems), the occupancies deviate from equilibria, while holding atomic-scale, inelastic spectral energy transfer kinetics. Heat transfer physics reaches nonequilibrium energy excitations and kinetics among the principal carriers, phonon, electron (and holes and ions), fluid particle, and photon. This allows atomic-level tailoring of energetic materials and energy-conversion processes and their efficiencies. For example, modern thermal-electric harvesters have transformed broad-spectrum, high-entropy heat into a narrow spectrum of low-entropy emissions to efficiently generate thermal electricity. Phonoelectricity, in contrast, intervenes before a low-entropy population of nonequilibrium optical phonons becomes a high-entropy heat. In particular, the suggested phonovoltaic cell generates phonoelectricity by employing the nonequilibrium, low-entropy, and elevated temperature optical-phonon produced population—for example, by relaxing electrons, excited by an electric field. A phonovoltaic material has an ultranarrow electronic bandgap, such that the hot optical-phonon population can relax by producing electron-hole pairs (and power) instead of multiple acoustic phonons (and entropy). Examples of these quanta and spectral heat transfer are reviewed, contemplating a prospect for education and research in this field.

Engineering↗

Spatiotemporal dynamics of fast electron heating in solid-density matter via XFEL

Abstract High-intensity, short-pulse lasers are crucial for generating energetic electrons that produce high-energy-density (HED) states in matter, offering potential applications in igniting dense fusion fuels for fast ignition laser fusion. High-density targets heated by these electrons exhibit spatially non-uniform and highly transient conditions, which have been challenging to characterize due to limitations in diagnostics that provide simultaneous high spatial and temporal resolution. Here, we employ an X-ray Free Electron Laser (XFEL) to achieve spatiotemporally resolved measurements at sub-micron and femtosecond scales on a solid-density copper foil heated by laser-driven fast electrons. Our X-ray transmission imaging reveals the formation of a solid-density hot plasma localized to the laser spot size, surrounded by Fermi degenerate, warm dense matter within a picosecond, and the energy relaxation occurring within the hot plasma over tens of picoseconds. These results validate 2D particle-in-cell simulations incorporating atomic processes and provide insights into the energy transfer mechanisms beyond current simulation capabilities. This work significantly advances our understanding of rapid fast electron heating and energy relaxation in solid-density matter, serving as a key stepping stone towards efficient high-density plasma heating and furthering the fields of HED science and inertial fusion energy research using intense, short-pulse lasers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Quantifying interfacial energetics of 2D semiconductor electrodes using in situ spectroelectrochemistry and many-body theory

Hot carrier extraction occurs in 2D semiconductor photoelectrochemical cells. Boosting the energy efficiency of hot carrier-based photoelectrochemical cells requires maximizing the hot carrier extraction rate relative to the cooling rate. One could expect to tune the hot carrier extraction rate constant (k ET ) via a Marcus–Gerischer relationship, where k ET depends exponentially on ΔG°' (the standard driving force for interfacial electron transfer). ΔG°' is defined as the energy level difference between a semiconductor's conduction/valence band (CB/VB) minima/maxima and the redox potential of reactant molecules in solution. A major challenge in the electrochemistry community is that conventional approaches to quantify ΔG°' for bulk semiconductors (e.g., Mott–Schottky measurements) cannot be directly applied to ultrathin 2D electrodes. The specific problem is that enormous electronic bandgap changes (>0.5 eV) and CB/VB edge movement take place upon illuminating or applying a potential to a 2D semiconductor electrode. Here, we develop an in situ absorbance spectroscopy approach to quantify interfacial energetics of 2D semiconductor/electrolyte interfaces using a minimal many-body model. Our results show that band edge movement in monolayer MoS 2 is significant (0.2–0.5 eV) over a narrow range of applied potentials (0.2–0.3 V). Such large band edge shifts could change k ET by a factor of 10–100, which has important consequences for practical solar energy conversion applications. We discuss the current experimental and theoretical knowledge gaps that must be addressed to minimize the error in the proposed optical approach.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗