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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Development of High Temperature Gas Sensor Technology

The measurement of engine emissions is important for their monitoring and control. However, the ability to measure these emissions in-situ is limited. We are developing a family of high temperature gas sensors which are intended to operate in harsh environments such as those in an engine. The development of these sensors is based on progress in two types of technology: (1) The development of SiC-based semiconductor technology; and (2) Improvements in micromachining and microfabrication technology. These technologies are being used to develop point-contact sensors to measure gases which are important in emission control especially hydrogen, hydrocarbons, nitrogen oxides, and oxygen. The purpose of this paper is to discuss the development of this point-contact sensor technology. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. Of particular importance is sensor sensitivity, selectivity, and stability in long-term, high temperature operation. An overview is presented of each sensor type with an evaluation of its stage of development. It is concluded that this technology has significant potential for use in engine applications but further development is necessary.

Hunter, Gary W.↗
NASA NTRS2002

High-Temperature Gas Sensor Array (Electronic Nose) Demonstrated

The ability to measure emissions from aeronautic engines and in commercial applications such as automotive emission control and chemical process monitoring is a necessary first step if one is going to actively control those emissions. One single sensor will not give all the information necessary to determine the chemical composition of a high-temperature, harsh environment. Rather, an array of gas sensor arrays--in effect, a high-temperature electronic "nose"--is necessary to characterize the chemical constituents of a diverse, high-temperature environment, such as an emissions stream. The signals produced by this nose could be analyzed to determine the constituents of the emission stream. Although commercial electronic noses for near-room temperature applications exist, they often depend significantly on lower temperature materials or only one sensor type. A separate development effort necessary for a high-temperature electronic nose is being undertaken by the NASA Glenn Research Center, Case Western Reserve University, Ohio State University, and Makel Engineering, Inc. The sensors are specially designed for hightemperature environments. A first-generation high-temperature electronic nose has been demonstrated on a modified automotive engine. This nose sensor array was composed of sensors designed for hightemperature environments fabricated using microelectromechanical-systems- (MEMS-) based technology. The array included a tin-oxide-based sensor doped for nitrogen oxide (NOx) sensitivity, a SiC-based hydrocarbon (CxHy) sensor, and an oxygen sensor (O2). These sensors operate on different principles--resistor, diode, and electrochemical cell, respectively--and each sensor has very different responses to the individual gases in the environment. A picture showing the sensor head for the array is shown in the photograph on the left and the sensors installed in the engine are shown in the photograph on the right. Electronics are interfaced with the sensors for temperature control and signal conditioning, and packaging designed for high temperatures is necessary for the array to survive the engine environment.

Hunter, Gary W.↗
DOE OSTI2025

High-Temperature Gas Sensor Materials with Properties Predicted via First-Principles Calculations with Machine Learning Modeling and Experimental Corroboration

Understanding the temperature dependence of functional properties of sensing materials is vital for their applications in combustion environments. The electron-phonon coupling that derives the electronic structure change with temperatures is a key property of interest as it affects other sensing responses. Herein, we first assess the temperature dependence of band gap renormalization in sensing materials by employing Allen-Heine-Cardona (AHC) theory with density functional theory (DFT) simulations corroborated with experimental observation. As the AHC calculations are impractical for high-throughput screening of materials, we employ data-driven Gaussian process regression to predict the parameters employed in the O’Donnell empirical model from a set of physical features. To mitigate the reliability issues arising from the small size of the dataset, we apply a Bayesian technique to improve the generalizability of the data-driven models as well as to quantify the uncertainty associated with theoretical predictions. These models capture well the overall trend of the O’Donnell parameters with respect to a reduced feature set obtained by transforming the available physical features. Quantifying the associated uncertainty helps us understand the reliability of the predictions and, therefore, the variation of bandgap as a function of temperature for other novel materials. The predicted candidates from machine learning models are further validated by experiments and DFT calculations.

bandgap renormalization↗
DOE OSTI2025

Nickel-incorporated Oxide Composites for Fiber-Optic Based Gas Sensing

Numerous high-value applications within the energy sector involve environmental conditions that are incompatible with traditional sensor technology due to degradation of electrical interconnects, packaging, or the sensors themselves. These can include chemically harsh conditions, high temperature operation, or the presence of electromagnetic interference due to high voltage. The fiber optic platform, constructed of robust, electrically insulating glass or single crystal oxides, offers a versatile and often low cost per node solution to this problem, especially with the integration of distributed sensing techniques such as optical time-domain and frequency-domain reflectometry (OTDR, OFDR). A major challenge of gas and chemical sensing on the optical fiber platform is the fabrication of robust and stable sensing materials that interact quickly and reversibly to the presence of the target analytes. In this work, we discuss the utilization of nickel-incorporated oxides on evanescent-field optical fiber sensors for gas sensing under harsh conditions relevant to multiple energy infrastructure applications. This paper will discuss a Ni/GDC (Ni / Gd-doped ceria) based sensing layer targeting conditions relevant for high-temperature (up to at least 800oC) hydrogen sensing applications (e.g., for operation within a solid oxide fuel cell or electrolyzer). The impact of hydrogen at elevated temperatures on the optical properties of Ni/GDC will be shown and the material mechanisms for the optical response will be discussed.

gas sensors↗
DOE OSTI2025

Nickel-incorporated Oxide Composites for Fiber-Optic Based Gas Sensing

Numerous high-value applications within the energy sector involve environmental conditions that are incompatible with traditional sensor technology due to degradation of electrical interconnects, packaging, or the sensors themselves. These can include chemically harsh conditions, high temperature operation, or the presence of electromagnetic interference due to high voltage. The fiber optic platform, constructed of robust, electrically insulating glass or single crystal oxides, offers a versatile and often low cost per node solution to this problem, especially with the integration of distributed sensing techniques such as optical time-domain and frequency-domain reflectometry (OTDR, OFDR). A major challenge of gas and chemical sensing on the optical fiber platform is the fabrication of robust and stable sensing materials that interact quickly and reversibly to the presence of the target analytes. In this work, we discuss the utilization of nickel-incorporated oxides on evanescent-field optical fiber sensors for gas sensing under harsh conditions relevant to multiple energy infrastructure applications. This paper will discuss a Ni/GDC (Ni / Gd-doped ceria) based sensing layer targeting conditions relevant for high-temperature (up to at least 800 oC) hydrogen sensing applications (e.g., for operation within a solid oxide fuel cell or electrolyzer). The impact of hydrogen at elevated temperatures on the optical properties of Ni/GDC will be shown and the material mechanisms for the optical response will be discussed.

gas sensors↗
NASA NTRS1988

Optical Sensor Of High Gas Temperatures

Contact pyrometer resists effects of heat, vibration, and moisture. New sensor consists of shielded sapphire rod with sputtered layer of precious metal on end. Metal layer acts as blackbody. Emits radiation having known dependence of spectral distribution with temperature of metal and temperature of hot gas flowing over metal. Fiber-optic cable carries radiation from sapphire rod to remote photodetector.

Hill, Arthur J.↗
NASA NTRS1996

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

Chen, Liang-Yu↗
NASA NTRS2002

Development of Sic Gas Sensor Systems

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

Hunter, G. W.↗
DOE OSTI2025

Machine Learning-Guided Design of Perovskite Oxides for High-Temperature Oxygen Sensing

Presentation slides for 2025 MRS Fall Meeting & Exhibit. Reliable oxygen sensors are vital for high temperature applications including combustion engines, steel production, and petrochemical refining, yet identifying stable, high-performance materials for such environments remain challenge. We apply machine learning (ML) to predict the atmospheric oxygen partial pressure–dependent conductivity of perovskite oxides, combining data from the Materials Project and published datasets.

high temperature gas sensor↗
DOE OSTI2021

A surface acoustic wave hydrogen sensor with tin doped indium oxide layers for intermediate temperatures

We report high temperature surface acoustic wave (SAW) gas sensors with conducting sensing layers require tuning of the sheet conductivity for optimal response. Conducting metal oxides are attractive sensing materials for their tunable electronic properties and high thermal stability, amongst others. Here, we have investigated the application of indium oxide (IO) and indium tin oxide (ITO) films on langasite (LGS)-based SAW reflective delay line sensor devices for monitoring hydrogen at 350 °C. Specifically, we modeled the effect of the IO and ITO sensing layer thickness on the wave velocity, attenuation, and effective electromechanical coefficient. This was followed by an experimental demonstration of tuning of the ITO film sheet conductivity by controlling the dopant concentration and yielding an improvement in the sensor sensitivity. The current study provides a pathway towards the development of conductivity-based sensing layers for high temperature SAW gas sensors with improved sensitivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1997

SiC-Based Schottky Diode Gas Sensors

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Hunter, Gary W.↗
NASA NTRS1998

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Lu, W. J.↗
NASA NTRS2013

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Electronic packaging↗
NASA NTRS2013

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Chen, Liang-Yu↗
DOE OSTI2025

Application of a Physics-Informed Convolutional Neural Network for Monitoring the Temperature Fields in High-Temperature Gas Reactors

Here, this work presents current advances in applying a physics-informed convolutional neural network (CNN) to evaluate temperature distributions in advanced reactors. Our goal is to demonstrate that the CNN can reconstruct temperature fields within the solid region of a prismatic fuel assembly in a high-temperature gas reactor (HTGR) with sensor data available in only a few cooling channels. Before that, we showcase the superior performance of the physics-informed CNN in comparison to a purely data-driven multilayer perceptron (MLP), considering a canonical heated channel setup. This analysis shows the advantages of our approach and justifies its choice. The datasets employed here are obtained upon numerical simulations performed with codes under the Nuclear Energy Advanced Modeling and Simulation program. This work is important, as industry experience indicates that the assembly material in HTGR concepts is prone to large thermal-mechanical loads nearing operational limits. This makes it crucial to characterize peak temperatures and their distributions near hot spots. Modern thermocouples are unreliable in these types of harsh environments because of the high neutron fluxes and elevated temperatures involved. The CNN-based field reconstruction represents an attractive solution, enabling sensor arrays in less aggressive locations and augmenting indirect predictions for less accessible regions. The results show that the CNN reduces prediction errors by orders of magnitude in comparison to the MLP, considering the simple yet well-representative heated channel case. In the case of the HTGR fuel assembly, the CNN can successfully reconstruct temperature fields over various cooling regimes. Furthermore, we also explore the algorithm’s ability to detect abnormalities. Interestingly, the CNN proves it has the capacity to detect blockage in one of the noninstrumented cooling channels.

Machine learning↗
DOE OSTI2023

A High-Temperature Multipoint Hydrogen Sensor Using an Intrinsic Fabry–Perot Interferometer in Optical Fiber

This paper presents a multiplexable fiber optic chemical sensor with the capability of monitoring hydrogen gas concentration at high temperatures up to 750 °C. The Pd-nanoparticle infused TiO 2 films coated on intrinsic Fabry–Perot interferometer (IFPI) array were used as sensory films. Strains induced upon exposure to hydrogen with varied concentrations can be monitored by IFPI sensors. The fiber sensor shows a repetitive and reversible response when exposed to a low level (1–6%) of hydrogen gas. Uniform sensory behavior across all the sensing cavities is demonstrated and reported in this paper.

47 OTHER INSTRUMENTATION↗
NASA NTRS2007

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Hunter, Gary W.↗