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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

High-Operating-Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

A mid-wavelength infrared (MWIR) barrier photodetector is capable of operating at higher temperature than the prevailing MWIR detectors based on InSb. The standard high-operating-temperature barrier infrared detector (HOT-BIRD) is made with an InAsSb infrared absorber that is lattice-matched to a GaSb substrate, and has a cutoff wavelength of approximately 4 microns. To increase the versatility and utility of the HOT-BIRD, it is implemented with IR absorber materials with customizable cutoff wavelengths. The HOT-BIRD can be built with the quaternary alloy GaInAsSb as the absorber, GaAlSbAs as the barrier, on a lattice-matching GaSb substrate. The cutoff wavelength of the GaInAsSb can be tailored by adjusting the alloy composition. To build a HOT-BIRD requires a matching pair of absorber and barrier materials with the following properties: (1) their valence band edges must be approximately the same to allow unimpeded hole flow, while their conduction band edges should have a large difference to form an electron barrier; and (2) the absorber and the barrier must be respectively lattice-matched and closely lattice-matched to the substrate to ensure high material quality and low defect density. To make a HOT-BIRD with cutoff wavelength shorter than 4 microns, a GaInAsSb quaternary alloy was used as the absorber, and a matching GaAlSbAs quaternary alloy as the barrier. By changing the alloy composition, the band gap of the quaternary alloy absorber can be continuously adjusted with cutoff wavelength ranging from 4 microns down to the short wavelength infrared (SWIR). By carefully choosing the alloy composition of the barrier, a HOT-BIRD structure can be formed. With this method, a HOT-BIRD can be made with continuously tailorable cutoff wavelengths from 4 microns down to the SWIR. The HOT-BIRD detector technology is suitable for making very-large-format MWIR/SWIR focal plane arrays that can be operated by passive cooling from low Earth orbit. High-operating temperature infrared with reduced cooling requirement would benefit space missions in reduction of size, weight, and power, and an increase in mission lifetime.

Ting, David Z.↗
NASA NTRS2021

High operating temperature T2SL digital focal plane arrays for earth remote sensing instruments

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.

Ghuman, and Parminder↗
NASA NTRS2002

Refractive Secondary Solar Concentrator Demonstrated High-Temperature Operation

Space applications that utilize solar thermal energy--such as electric power conversion systems, thermal propulsion systems, and furnaces--require highly efficient solar concentration systems. The NASA Glenn Research Center is developing the refractive secondary concentrator, which uses refraction and total internal reflection to efficiently concentrate and direct solar energy. When used in combination with advanced lightweight primary concentrators, such as inflatable thin films, the refractive secondary concentrator enables very high system concentration ratios and very high temperatures. Last year, Glenn successfully demonstrated a secondary concentrator throughput efficiency of 87 percent, with a projected efficiency of 93 percent using an antireflective coating. Building on this achievement, Glenn recently successfully demonstrated high-temperature operation of the secondary concentrator when it was used to heat a rhenium receiver to 2330 F. The high-temperature demonstration of the concentrator was conducted in Glenn's 68-ft long Tank 6 thermal vacuum facility equipped with a solar simulator. The facility has a rigid panel primary concentrator that was used to concentrate the light from the solar simulator onto the refractive secondary concentrator. NASA Marshall Space Flight Center provided a rhenium cavity, part of a solar thermal propulsion engine, to serve as the high-temperature receiver. The prototype refractive secondary concentrator, measuring 3.5 in. in diameter and 11.2 in. long, is made of single-crystal sapphire. A water-cooled splash shield absorbs spillage light outside of the 3.5-in. concentrator aperture. Multilayer foil insulation composed of tungsten, molybdenum, and niobium is used to minimize heat loss from the hightemperature receiver. A liquid-cooled canister calorimeter is used to measure the heat loss through the multilayer foil insulation.

Wong, Wayne A.↗
DOE OSTI2026

Performance Evaluation of an Additively Manufactured ultra-High Operating Temperature SiC Solar-Thermal Air Receiver (HOTSSTAR) Test Module

Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal and solar power systems. GE Aerospace Research in collaboration with Heliogen Inc and Sandia National Laboratories (SNL) is engaged in the development of ultra-High Operating Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing. HOTSSTAR goal is to demonstrate SiC receiver with air exit temperatures up to 1100oC. We discuss fabrication and on-sun test results of a prototype 50kWth test module. The receiver architecture is based on a radial airflow design and consists of a series of radial SiC receiver sectors organized around central absorber. These components were fabricated using binder-jet printed SiC followed by melt-infiltration reaction bonding process. To enhance the thermo-mechanical reliability of SiC test articles in thermal gradient/ shock environment of the application, the components were laminated with GE’s MI SiC CMC. A dedicated test facility was constructed at SNL Solar Tower to evaluate the operational performance of HOTSSTAR module under solar fluxes >200 W/cm2. We report on our final 50kW test module fabrication, integration at the test facility at Sandia, and discuss on-sun test results. We compare the performance of HOTSSTAR module relative to our model predictions.

14 SOLAR ENERGY↗
NASA NTRS2012

High Operating Temperature Midwave Quantum Dot Barrier Infrared Detector (QD-BIRD)

The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at ~150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to ~6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.

quantum dot↗
DOE OSTI2026

Ultra-High Operation Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing: Test Facility & Performance Evaluations

Solar Heat for Industrial Processes (SHIP) cavity receivers are capable of generating electricity or industrial process heat by absorbing thermal energy from solar radiation, focused on a small area. The concentration of solar radiation on the small area of the receiver enables the achievement of high temperatures (ranging from 400°C to 1,100°C) of a working fluid, thus making the SHIP technology thermodynamically comparable with conventional power plants. A volumetric receiver consists of a porous structure-generally made of silicon carbide or metal, which absorbs solar radiation and converts it into heat energy. Heat energy from the porous materials is then transferred to the fluid following through them. A volumetric receiver acts as a convective heat exchanger, transferring heat to the fluid through convection. Open-loop volumetric receivers work with air at atmospheric pressure and are suitable for single-cycle or multi-cycle energy plants. A Model Based Systems Engineering (MBSE) approach was used to develop a test bed at Sandia national Laboratories (SNL) capable of demonstrating an open-loop volumetric air receiver developed by General Electric Aerospace (GE Aerospace). This paper presents the development of the various MBSE methods, test bed, and testing operations for the GE air receiver, which was experimentally demonstrated to achieve 1,350°C for over 3 hours of operation and an approximate 70% receiver efficiency. By being able to achieve such high temperatures >1,000°C, this work provides the potential to support many SHIP industrial use cases.

14 SOLAR ENERGY↗
NASA NTRS2008

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS1974

Evaluation of cermet materials suitable for lithium lubricated thrust bearings for high temperature operation

Cerment materials (HfC - 10 wt% W; HfC - 10 wt% TaC - 10 wt%W; HfC - 2 wt% CbC - 8 wt% Mo;Hfn - 10 wt% W; Hfn - 10 wt% TaN - 10 wt% W; and ZrC - 17 wt% W) were evaluated for possible use as lithium-lubricated bearings in the control system of a nuclear reactor. Tests of compatibility with lithium were made in T-111 (Ta-8W-2Hf) capsules at temperatures up to 1090 C. The tendencies of HfC-TaC-W, HfC-CbC-Mo, and HfN-W to bond to themselves and to the refractory alloys T-111 and TZM when enclosed in lithium-filled capsules under a pressure of 2000 psi at 980 and 1200 C for 1933 hours were evaluated. Thermal expansion characteristics were determined for the same three materials from room temperature to 1200 C. On the basis of these tests, HfC-10 TaC-10W and HfN-10W were selected as the best and second best candidates, respectively, of the materials tested for the bearing application.

Sinclair, J. H.↗
NASA NTRS1981

Passive components for high temperature operation

The development of resistors, capacitors, and interconnect metalizations utilizing a low pressure chemical vapor deposition (LPCVD) process is described. The LPCVD process allows the passive components to be fabricated at temperatures higher than their highest operating temperatures. The deposition of thin films by LPCVD is accomplished by reacting one or more gases on the surface of a heated substrate. The substrates to be coated are placed on a graphite susceptor and then loaded into the center of a quartz reaction tube. The RF power is applied to the coil on the outside of the reaction tube which in turn is coupled into the graphite susceptor causing it to heat. Pressures of several torr or less are typical, with carrier flow rates of 0.1 to 2.0 liters/min. Nitrogen, hydrogen, and helium are typical carrier gases. These are controlled with mass flow controllers and the pressure is continuously monitored with a capacitive manometer. Materials selection and device testing are also discussed.

Raymond, L. S.↗
NASA NTRS1981

Evaluation of crystal oscillators and frequency dividers for high temperature operation

Active and passive components of crystal oscillators and frequency dividers were tested to determine their performance at temperatures from 300 C to 350 C. The properties of GaAs JFETs were determined and their performance compared with that of silicon devices. Techniques for constructing breadboard circuits were assessed for operation in this temperature range. A Pierce oscillator and a multivibrator (Colorado crystal) oscillator were constructed and tested. Device failures are discussed.

Source record↗
NASA NTRS2015

High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

Ting, David Z.↗