SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Many papers have presented models for estimating proton SEU cross sections from heavy-ion test data, but all rigorous treatments to date are based on the sensitive volume (SV) model for charge collection.
To enable autonomy in space, machine-learning and computer vision applications become invaluable for sensor processing. However, these algorithms are computationally complex and unfeasible for many embedded central processing units (CPUs) and usually require external coprocessors, such as graphics processing units (GPUs) or accelerators specific to the application, including application specific integrated circuits (ASICs). In power-constrained systems, GPUs tend to consume more power than is acceptable (>40W), so lower-power accelerators have shown promise to provide the performance needed under spacecraft constraints. For radiation engineers, developing methodologies that can properly test CPUs, GPUs, and accelerators, and enable comparisons between them remains a necessary complication to solve as the devices become more complex. The methodology in this test aims to be a start in developing a baseline single-event effect (SEE) test for client-device machine learning accelerators. This category of devices do not host their own operating system. This testing campaign is a continuation of a previous 200 MeV proton test performed in January 2024. This report covers two heavy ion tests of the SAKURA-I card: one in April 2024, and one in June 2024. Additional data was needed after the April test due to ion-range issues experienced at higher linear-energy transfers (LETs). These range issues are described in more detail in Section 8. This experiment characterizes SEEs and data error susceptibility of the EdgeCortix SAKURA-I machine-learning accelerator under heavy ions. The device was monitored for single event upsets (SEUs) and single event functional interrupts (SEFIs) at the Lawrence Berkeley National Laboratory’s 88-inch cyclotron. The SAKURA-I board accelerates machine-learning inference applications on a host computer through a PCIex16 connection. For the purposes of devising an end to end automated analysis workflow for this experiment, the YOLO-V5 and SSD300 objection-detection models, and the ResNet-50, EfficientNet, and MobileNetV2 image classification models were used as a representative suite of analytical machine-learning models.
The goal of this study was to perform an independent investigation of single event destructive and transient susceptibility of the Microsemi RTG4 device. The devices under test were the Microsemi RTG4 field programmable gate array (FPGA) Rev C. The devices under test will be referenced as the DUT or RTG4 Rev C throughout this document. The DUT was configured to have various test structures that are geared to measure specific potential susceptibilities of the device. DesignDevice susceptibility was determined by monitoring the DUT for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) was checked throughout heavy-ion testing by monitoring device current.
This is an independent investigation that evaluates the single event destructive and transient susceptibility of the Xilinx Kintex-UltraScale device. Design/Device susceptibility is determined by monitoring the device under test (DUT) for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) is monitored throughout heavy-ion testing by examining device current. This device does not have embedded mitigation. Hence, user implemented mitigation is investigated using Synopsys mitigation tools.
We present the current status of United States domestic heavy ion single-event effects (SEE) radiation test facilities, including general perspectives on near- and mid-term needs for both capacity and capabilities.
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the AD9364 from Analog Devices.
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the LTC6268-10 from Linear Technology Corp.
This viewgraph presentation describes radiation tests of nanocrystal (NC) memory for space systems. A nanocrystal test chip was bombarded by heavy ions from a cyclotron.
The purpose of this test campaign is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the AD9257-EP from Analog Devices.
This paper presents recent heavy ion single-event effects test results for commercial off the shelf devices. Data was taken in CY17 for device evaluation for use in a Class D NASA interplanetary mission payload.
We present single-event effects testing results from a commercially-available automotive microcontroller. We discuss the difficulties encountered testing with commercially-provided evaluation boards while attempting to classify the complex and varied failure modes of a modern 32-bit microcontroller. This work also describes some of the possible advantages to using off-the-shelf automotive-grade electronics for low-risk aerospace applications.
Seven commercial off the shelf (COTS) boards containing electronic devices (all in plastic packages, PEMS), under consideration for use in a spacecraft subsystem, were exposed to beams of very high energy ions at the National Superconducting Cyclotron Laboratory (MSU). The ion energies were high enough that an entire board could be exposed in air, and it could still penetrate through the plastic and reach the silicon die. A total of about 300 runs were made, and for each, the LET of the ion entering the silicon die had to be determined, based on the thickness of the plastic lid and the thickness of overlaying materials (e.g., aluminum degraders). Single event latchup (SEL) and functional interrupt (SEFI) were determined during each run, the SEFI by means of simple programs being continuously written to and read from the boards to monitor functionality, while each part was being exposed to the heavy ions.
Explore the source record for details and available documents.
A 1 GeV/u Fe-56 ion beam allows for true 90deg tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.
A 1 GeV/u Fe-56 Ion beam allows for true 90 deg. tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the galactic cosmic ray (GCR) flux-energy peak.
A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.
This study was undertaken to determine the Single Event Latchup (SEL) susceptibility of the Vishay DG403DY-E3 (Analog Switch). The device was under a biased and switching configuration during irradiation and continuously monitored for destructive events. The parts were tested at the Lawrence Berkeley National Laboratory 88 inch cyclotron facility
This report presents 2019 LBNL SEE data and compares previous Texas A&M data to LBNL SEE DUT responses.