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Grain growth behavior in fully dense compacts of MgO of very high purity was studied, and the results compared with other similar behaving materials. The activation energy for the intrinsic self-diffusion of Mg(2minus) is discussed along with the grain boundary diffusion of O(2minus). Grain boundary diffusion of O(2minus) is proposed as the controlling mechanism for grain growth.
Grain boundary diffusion of a Pr 3 (Co,Cu) eutectic alloy has been performed for coercivity enhancement on Nd-lean Nd 10 Fe 84 B 6 nanocrystalline ribbons. The coercivity increases from 0.5 T to 2.5 T after 6 h of infiltration at 600 °C. High resolution electron microscopy and energy dispersive X-ray spectroscopy show that the excess α-Fe present in the initial samples diminishes during infiltration, giving rise to the formation of a Rare Earth-rich RE-Fe inter-boundary phase and a layer of (Nd,Pr) 2 Fe 14 B close to the surface of the hard magnetic grains. Such a microstructure favours the coercivity by increasing the nucleation field for reversal magnetization and providing magnetically isolated/decoupled hard grains.
Knowledge of the limits of the principal Harrison kinetics regimes (Type-A, B and C) for grain boundary diffusion is very important for the correct analysis of the depth profiles in a tracer diffusion experiment. These regimes for self-diffusion have been extensively studied in the past by making use of the phenomenological Lattice Monte Carlo (LMC) method with the result that the limits are now well established. The relationship of those self-diffusion limits to the corresponding ones for solute diffusion in the presence of solute segregation to the grain boundaries remains unclear. In the present study, the influence of solute segregation on the limits is investigated with the LMC method for the well-known parallel grain boundary slab model by showing the equivalence of two diffusion models. It is shown which diffusion parameters are useful for identifying the limits of the Harrison kinetics regimes for solute grain boundary diffusion. It is also shown how the measured segregation factor from the diffusion experiment in the Harrison Type-B kinetics regime may differ from the global segregation factor.
High-temperature oxygen permeability measurements had determined grain-boundary diffusivities (deltaD(sub gb)) in bulk polycrystalline alumina (Wada, Matsudaira, and Kitaoka). They predict that oxygen deltaD(sub gb,O) varies with oxygen pressure as P(O2)(sup -1/6) at low pressure whereas aluminum deltaD(sub gb),Al varies with P(O2)(sup +3/16) at high pressure. These relations were used to evaluate alumina scale growth in terms of diffusivity and grain size. A modified Wagner treatment for dominant inward oxygen growth produces the concise solution: П(sub i) = k(sub p,i)×G(sub i) = 12 deltaD(sub gb,O,int), where П(sub i) is a constant and k(sub p,i) and G(sub i) refer to instantaneous values of the scale parabolic growth constant and grain size, respectively. A commercial FeCrAl(Zr) alloy was oxidized at 1100 to 1400 degC to determine k(sub p,i), interfacial grain size, П, and thus deltaD(sub gb,O,int). The deltaD(sub gb,O,int) values predicted from oxidation at (375 kJ/mole) were about 20 times less than those obtained above (at 298 kJ/mole), but closer than extrapolations from high-temperature bulk measurements. The experimental oxidation results agree with similar FeCrAl(X) studies, especially where both k(sub p,i) and G(sub i) were characterized. This complete approach accounts for temperature-sensitive oxidation effects of grain enlargement, equilibrium interface pressure variation, and grain-boundary diffusivity.
Abstract Grain boundaries can greatly affect the transport properties of polycrystalline materials, particularly when the grain size approaches the nanoscale. While grain boundaries often enhance diffusion by providing a fast pathway for chemical transport, some material systems, such as those of solid oxide fuel cells and battery cathode particles, exhibit the opposite behavior, where grain boundaries act to hinder diffusion. To facilitate the study of systems with hindered grain boundary diffusion, we propose a model that utilizes the smoothed boundary method to simulate the dynamic concentration evolution in polycrystalline systems. The model employs domain parameters with diffuse interfaces to describe the grains, thereby enabling solutions with explicit consideration of their complex geometries. The intrinsic error arising from the diffuse interface approach employed in our proposed model is explored by comparing the results against a sharp interface model for a variety of parameter sets. Finally, two case studies are considered to demonstrate potential applications of the model. First, a nanocrystalline yttria-stabilized zirconia solid oxide fuel cell system is investigated, and the effective diffusivities are extracted from the simulation results and are compared to the values obtained through mean-field approximations. Second, the concentration evolution during lithiation of a polycrystalline battery cathode particle is simulated to demonstrate the method’s capability.
Magnetic devices are often subject to thermal processing steps, such as field cooling to set exchange bias and annealing to crystallize amorphous magnetic electrodes. These processing steps may result in interdiffusion and the subsequent deterioration of magnetic properties. In this study, we investigated thermally-activated diffusion in Cu/Co/IrMn/Pt exchange biased polycrystalline thin-film structures using atom probe tomography. Images taken after annealing at 400 °C for 60 min revealed Mn diffusion into Co grains at the Co/IrMn interface and along Pt grain boundaries for the IrMn/Pt stack, i.e., a Harrison type C regime. Annealing at 500 °C showed further Mn diffusion into Co grains. At the IrMn/Pt interface, annealing at 500 °C led to a type B behavior since Mn diffusion was detected both along Pt grain boundaries and also into Pt grains. The deterioration of the films' exchange bias properties upon annealing was correlated to the observed diffusion. In particular, the topmost Pt capping layer thickness turned out to be crucial since a faster deterioration of the exchange bias properties for thicker caps was observed. This is consistent with the idea that Pt acts as a getter for Mn, drawing Mn out of the IrMn layer.
Highlights: • Dy and Co enriched shells were formed on the Nd{sub 2}Fe{sub 14}B grain boundaries. • Coercivity and remanence were increased simultaneously at high temperatures. • Remanence stability was improved with little change of the Curie temperature. - Abstract: The grain boundary diffusion process (GBDP) using Dy{sub 60}Co{sub 40} alloy was applied to a sintered Nd-Fe-B magnet. After GBDP the temperature stability of remanence was improved greatly with the remanence temperature coefficient improving from −0.140%/°C to −0.095%/°C while the Curie temperature increased marginally. Both the coercivity and remanence were increased simultaneously at high temperatures. Microstructure and composition analysis revealed that Dy and Co enriched shells were formed on Nd{sub 2}Fe{sub 14}B grain boundaries after GBDP. The Dy enriched shell increased the coercivity while the Co enriched shell decreased the temperature sensitivity of remanence and then increased the remanence at high temperatures.
Dy-free sintered magnets were fabricated by blending Neo powder with different grain boundary diffusion alloy powders. Cu, CeAl and CeAlCu have a negative effect on H cj of magnets, while PrAlCu and AlCuGa have a positive effect. The PrAlCu-added magnet achieves the best magnetic properties among all magnets with the additions of different diffusion alloys. With increasing PrAlCu from 0-10 wt.%, H cj of the magnets gradually increases from the original 14.5 kOe to 19.2 kOe. The magnet with 7.5 wt.% PrAlCu obtains a H cj of 18 kOe and (BH) max of 39.1 MGOe. It is found that Pr and Cu in PrAlCu alloy is mainly distributed at grain boundary and triple junctions, leading to a reduced coupling among grains, thus an enhanced H cj . Here, the grain boundary engineering by adding an appropriate alloy is an effective method to improve H cj of Dy-free NdFeB magnets.
A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick a-axis-oriented BaSi{sub 2} epitaxial film grown by molecular beam epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The depth profiles of B were investigated using secondary ion mass spectrometry (SIMS) with O{sup 2+}, and the diffusion coefficients of B were evaluated. The B profiles were reproduced well by taking both the lattice and the grain boundary (GB) diffusions into consideration. The cross-sectional transmission electron microscopy (TEM) image revealed that the GBs of the BaSi{sub 2} film were very sharp and normal to the sample surface. The plan-view TEM image exhibited that the grain size of the BaSi{sub 2} film was approximately 0.6 {mu}m. The temperature dependence of lattice and GB diffusion coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV and 4.4 eV, respectively.
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An illustration of the diffusion of potassium through the bulk and along the grain boundaries of PMO.
A multi-scale model reveals that the microstructure of the Li metal anode can impact the performance of solid-state batteries. Micron-sized, columnar grains are preferred for minimizing void formation at the solid electrolyte interface.
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Materials aging is a high-consequence failure mode in electronic systems. Such mechanisms can degrade the electrical properties of connectors, relays, wire bonds, and other interconnections. Lost performance will impact, not only that of the device, but also the function and reliability of next-level assemblies and the weapons system as a whole. The detections of changes to materials surfaces at the nanometer-scale resolution, provides a means to identify aging processes at their early stages before they manifest into latent failures that affect system-level performance and reliability. Diffusion will be studied on thin films that undergo accelerated aging using the nanometer scale characterization technique of Frequency Modulated Kelvin Probe Force Microscopy (FM-KPFM). The KPFM provides a relatively easy, non-destructive methodology that does not require high-vacuum facilities to obtain nanometer spatial resolution of surface chemistry changes. The KPFM method can provide the means to measure surface, and near-surface, elemental concentrations that allow the determination of diffusion rate kinetics. These attributes will be illustrated by assessing diffusion in a thin film couple. Validation data will obtained from traditional techniques: (a) Auger electron spectroscopy (AES), x-ray fluorescence (XRF), and xray photoelectron spectroscopy (XPS).
Materials aging is a high-consequence failure mode in electronic systems. Such mechanisms can degrade the electrical properties of connectors, relays, wire bonds, and other interconnections. Lost performance will impact, not only that of the device, but also the function and reliability of next-level assemblies and the weapons system as a whole. The detections of changes to materials surfaces at the nanometer-scale resolution, provides a means to identify aging processes at their early stages before they manifest into latent failures that affect system-level performance and reliability. Diffusion will be studied on thin films that undergo accelerated aging using the nanometer scale characterization technique of Frequency Modulated Kelvin Probe Force Microscopy (FM-KPFM). The KPFM provides a relatively easy, non-destructive methodology that does not require high-vacuum facilities to obtain nanometer spatial resolution of surface chemistry changes. The KPFM method can provide the means to measure surface, and near-surface, elemental concentrations that allow the determination of diffusion rate kinetics. These attributes will be illustrated by assessing diffusion in a thin film couple. Validation data will obtained from traditional techniques: (a) Auger electron spectroscopy (AES), x-ray fluorescence (XRF), and xray photoelectron spectroscopy (XPS).