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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2023

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

Thin‐film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime ( τ bulk ) is a critical parameter for solar cells but is difficult to determine in P–N junction devices, especially for high doping. As doping ≥10 16 cm −3 is required for efficient drift‐charge‐carrier‐collection devices, a method for τ bulk determination in doped P–N junction devices is necessary. This work utilizes time‐resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here for τ bulk determination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state‐of‐the‐art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently long τ bulk , where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro‐optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.

14 SOLAR ENERGY↗
DOE OSTI2025

Understanding ERE and iVOC Metrics for Graded CdSeTe Absorbers

PL-based external radiative efficiency (ERE) and implied open-circuit voltage (iVOC) metrics were introduced for thin-film solar absorbers to better understand the voltage deficit and diagnose losses in solar cells. Traditionally, elevated ERE and iVOC measurements are associated with diminished recombination within the solar device, a rationale heavily reliant on the assumption of a uniform bandgap and high carrier mobilities in the absorber. Recently, very low mobilities in CdSeTe absorbers (< 1 cm2/(V.s)) were measured using the light-induced transient grading technique. In this study, we use a detailed numerical model of iVOC to investigate the possible reasons of elevated iVOC in realistic CdSeTe absorbers with a graded Se profile. In particular, we examine how the bandgap nonuniformity and the reduced hole mobility in graded CdSeTe absorbers affect iVOC measurements. We show that high iVOC may result from inflated quasi-Fermi level splitting in the high-Se region in the front part of a CdSeTe absorber with slow hole transport. We reproduce the experimentally reported 360 mV increase in iVOC-VOC gap with reduced doping using a model with sub-1 cm2/(V.s) hole mobility in the high-Se region. Based on our results, we conclude that the iVOC metric (or ERE metric) should not be used as a sole metric of CdSeTe absorber quality. We discuss possible ways to extract useful information from the iVOC-VOC gap by supplementing the front-side illumination measurements with back-side illumination measurements.

14 SOLAR ENERGY↗
DOE OSTI2023

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗
DOE OSTI2012

CIGS Material and Device Stability: A Processing Perspective (Presentation)

This is a general overview of CIGS material and device fundamentals. In the first part, the basic features of high efficiency CIGS absorbers and devices are described. In the second part, some examples of previous collaboration with Shell Solar CIGSS graded absorbers and devices are shown to illustrate how process information was used to correct deviations and improve the performance andstability.

14 SOLAR ENERGY↗
DOE OSTI2020

Influence of Process Parameters and Absorber Thickness on Efficiency of Polycrystalline CdSeTe/CdTe Thin Film Solar Cells

Graded absorbers devices with with CdSe 0.4 Te 0.6 (molar basis) and CdTe were fabricated. CdCl 2 treatment time, post-deposition CdCl 2 anneal time and thicknesses of CdSeTe and CdTe layers were varied. Photoluminescence and electrical measurements were performed on the fabricated devices. Results revealed that the individual thicknesses of CdSeTe and CdTe is critical to overall efficiency of the devices. Device fabricated on substrate with 0.5 μm CdSeTe, 3 μm CdTe with rest of process parameters kept unchanged, produced an efficiency of 20.14%. We report highest device efficiency among academia and research institutions.

Shimpi, Tushar↗
DOE OSTI2022

Large-Area (Ag,Cu)(In,Ga)Se 2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap

The 1.24 eV bandgap, 18.8% power conversion efficiency Ag-alloyed chalcopyrite (Ag,Cu)(In,Ga)Se 2 (ACIGS) solar cells are characterized to relate voltage and efficiency improvements to electro-optical (EO) characteristics. Shockley-Read-Hall recombination center defect density, identified and characterized through deep level transient spectroscopy and time-resolved photoluminescence (TRPL), is reduced through potassium and copper treatment optimization. Concomitantly, longer minority carrier lifetimes are achieved, which increases open-circuit voltage (V OC ). Near-conduction band defects associated in earlier studies with light-induced current instability are also mitigated. Analysis of charge-carrier dynamics after single- and two-photon excitation is used to separate recombination at the front interface and in the absorber bulk. From TRPL decay simulations, the authors estimate ranges of key solar cell material characteristics: bulk carrier lifetime T bulk = 110-210 ns, charge-carrier mobility u = 110-160 cm 2 V -1 s -1 , and front interface recombination velocity S front = 700-1050 cm s -1 . This lowest-reported S front for ACIGS absorbers originates from the notched conduction band grading, which also makes the impact of the back interface recombination negligible. It is suggested in the results that solar cell performance enhancements can be made most readily with two distinct strategies: improving device architecture and reducing semiconductor defect densities. Using these approaches, power conversion efficiency in large-area solar cells is improved by 1.1% absolute.

14 SOLAR ENERGY↗
DOE OSTI2021

Steep sulfur gradient in CZTSSe solar cells by H 2 S-assisted rapid surface sulfurization

Sulfur/selenium grading is a widely used optimization strategy in kesterite thin-film solar cells to obtain a bandgap-graded absorber material and to optimize optical and electrical properties of the solar-cell device. In this work, we present a novel approach to introduce a [S]/([S] + [Se]) grading for Cu 2 ZnSn(S,Se) 4 solar cells. In contrast to commonly used methods with slow process dynamics, the presented approach aims to create a fast sulfurization reaction on the surface of pure selenide kesterite absorbers by using highly reactive H 2 S gas and high sulfurization temperatures in a rapid flash-type process. With a combination of X-ray photoelectron spectroscopy, X-ray emission spectroscopy, Raman spectroscopy, and Raman-shallow angle cross sections spectroscopy, we gain depth-varied information on the [S]/([S] + [Se]) ratio and discuss the impact of different process parameter variations on the material and device properties. The results demonstrate the potential of the developed process to generate a steep gradient of sulfur that is confined mainly to the surface region of the absorber film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Progress and Challenges in Absorber and Interface Fabrication of Polycrystalline CdTe Photovoltaics

Polycrystalline thin-film CdTe device efficiency of over 19% has been achieved at Colorado State University using a highly repeatable and scalable sublimation process. Record efficiency for research scale CdTe photovoltaics has been reported to be over 22% and highest reported module efficiency is over 18% by First Solar Inc. Use of Se alloying with CdTe to form a lower band-gap CdSexTe1-x (CST) alloy has led to higher devices efficiencies with better current collection. Recent materials characterization has revealed that Se may be responsible for more than just reduction of band-gap. With CdCl2 treatment Cl is known to very effectively passivate defects at CdTe grain boundaries. Recent materials and electrical characterization have shown that Se has a very similar behavior to Cl at the grain boundaries of polycrystalline CdTe. These include Se decorating the grain boundaries like Cl in the diffusion region between CST and CdTe while cross-section cathodoluminescence maps show substantially higher signal intensity in regions with Se. Double heterostructures fabricated using CdSeTe with Al2O3 as a passivating oxide have been measured to have several hundred nanosecond bulk recombination lifetime. These films were also measured to have surface recombination velocity of under 100 cm/s. These results among others emphasis that Se also helps in passivation of grain boundaries. High absorber quality may help in mitigating the voltage deficit that has traditionally been the largest limiting factor in CdTe photovoltaics in achieving efficiency closer to Shockley-Queisser limit. In addition to graded absorber devices and double heterostructures, replacing the traditional Cu doping with more advanced group V doping is an important research effort that maybe critical for future improvements in device efficiency. Nitrogen, Phosphorous, Arsenic and Antimony doping has been investigated by several research groups. Advanced co-sublimation hardware developed at Colorado State University provides researchers with a unique capability of depositing films for group V doping with Cd overpressure. Such deposition under Cd overpressure causes formation of CdV which is known to be favorable for incorporation of group V dopant and activation. Utilizing the high absorber and interface quality material and higher doping, efforts are in progress to fabricate polycrystalline devices with open-circuit voltage over 1V and device efficiency over 24%.

Munshi, Amit↗
DOE OSTI2019

Effect of selenium and chlorine co-passivation in polycrystalline CdSeTe devices

CdTe-based solar cell efficiency has rapidly improved over the last few years. Some of the reasons have been a change to the absorber composition including the incorporation of selenium, and better front contact and emitter materials in CdTe photovoltaic devices. In addition to the increase in short-circuit current by reducing the bandgap, Se plays other important roles in passivation of defects thus improving the conversion efficiency of CdSeTe/CdTe graded absorber photovoltaic devices. Here, we combine structural and optical characterizations with first principles calculations to investigate the role of Se and Cl segregation in CdSeTe devices. We find that in the presence of Se and Cl, the minority carrier lifetime improves due to a reduction of midgap defect states. Here, we also correlate this effect with defect passivation in CdSeTe devices and suggest innovative ways to further improve CdTe-based photovoltaic efficiency.

14 SOLAR ENERGY↗
DOE OSTI2019

Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers

This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.

14 SOLAR ENERGY↗
NASA NTRS2020

Effects of Texture and Silica Content on Crack Growth in Boron Nitrides

Boron nitride is used in applications such as crucibles for melting and casting glasses and metals, insulators for furnaces, molds for hot pressing, and neutron absorbers. Historically, various grades of hot pressed hexagonal boron nitride (BN) have been used. This study investigates the fracture toughness and slow crack growth parameters of several commercially available BN grades. Prior work revealed that some grades of BN absorb water and change strength, thus presenting a philosophical conundrum on crack growth test methods. The grades selected for this study are of interest because their available billet size is sufficient for large components, or because they have heritage in specific applications. Ultimately, the data will be used to perform material selection, system design and reliability analyses of components of interest. Boron nitrides exhibit limited slow crack growth in humidity, with an orientation dependence due to crystallographic texture: orientations with van der Waal bonds are insensitive to water whereas those with covalent bonds are sensitive. Fracture toughness is low, around that of glass, and is also a function of orientation (bond type), with fracture occurring more readily along van der Waal bonds between hexagonal BN platelets than at covalent bonds across platelets. Silica additions toughen BN, but increase slow crack growth susceptibility.

Salem, Jonathan A.↗
DOE OSTI2020

Over 11% Efficient Eco-Friendly Kesterite Solar Cell: Effects of S-Enriched Surface of Cu2ZnSn(S,Se)4 Absorber and Band Gap Controlled (Zn,Sn)O Buffer

For high efficiency kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell, CdS thin film was usually used as a buffer layer. However, due to the toxicity of Cd and pollution problems involved from the solution-based chemical bath deposition, eco-friendly high efficiency CZTSSe solar cell with Cd-free buffer is necessary. As an Cd-free buffer layer, we investigated (Zn,Sn)O (ZTO) film deposited by sputtering method. In order to achieve high power conversion efficiency, we controlled energy band gaps of CZTSSe absorber as well as ZTO buffer, which was required to optimize conduction band offset (CBO) between the absorber and the buffer and to increase open circuit voltage (Voc) and fill factor (FF). The CBO was optimized by controlling the band gap of ZTO. By varying the Sn/(Zn + Sn) ratio and its deposition temperature, band gap of ZTO was successfully adjusted. Experimental and computational calculation results showed that solar cell performance was strongly affected by the CBO between absorber and buffer. Besides CBO matching, larger band gap of ZTO improved short circuit current density (Jsc) with enhanced external quantum efficiency value in blue photon spectrum range. As an additional way to improve power conversion efficiency of solar cell, band graded CZTSSe absorber was developed by using spray-based two-step process. The sprayed CZTSSe film was engineered to have S-enriched surface, which makes surface band gap widened and surface passivated, and resultantly increases Voc, Jsc and fill factor (FF). By controlling band gaps of both CZTSSe absorber and ZTO buffer, we obtained 11.22% environment-friendly CZTSSe solar cell without MgF2 anti-reflection coating.

(Zn↗
DOE OSTI2015

Graded band gap GaInNAs solar cells

Dilute nitride GaInN(Sb)As with a band gap (E{sub g}) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔE{sub g}) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells

Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 um and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm 2 . The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2018

Achieving band gap grading of CZTS and CZTSe materials

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗