Effects of Alkali Metal Gettering Agents on Stainless Steel Corrosion
Effects of alkali liquid metal gettering agents on stainless steel corrosion
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Effects of alkali liquid metal gettering agents on stainless steel corrosion
The diffusion of oxygen into, or out of, a gettered alloy exposed to oxygenated alkali liquid metal coolant, a situation arising in some high temperature heat transfer systems, was analyzed. The relation between the diffusion process and the thermochemistry of oxygen in the alloy and in the alkali metal was developed by making several simplifying assumptions. The treatment is therefore theoretical in nature. However, a practical example pertaining to the startup of a heat pipe with walls of T-111, a tantalum alloy, and lithium working fluid illustrates the use of the figures contained in the analysis.
The substrate to be coated (which may be of metal, glass or the like) is cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system, vapor deposition by a sublimator or vaporizer coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate. After the hydride forming metal coating is formed, deuterium or other hydrogen isotopes are bled into the vacuum system and diffused into the metal film or coating to form a hydride of metal film. Higher substrate temperatures and pressures may be used if various parameters are appropriately adjusted.
Metal absorbs hydrogen dissolved in heat-transfer fluids. Blockages by hydrogen gas in refrigerators, heat pipes, and other two-phase heat-transport systems eliminated by use of degassing metals or alloys called getters. Getter contained in getter capsule placed in series or in parallel with heat-transport loop. Gas-removal technique more specific and more reliable in solving problem of gas blockage than older procedures.
Oxidation characteristics of refractory metals for use as hot getters in sodium coolant purifying systems
Heat switches have many uses in cryogenics, from regulating heat flow between refrigeration stages to thermally isolating components once they have cooled to low temperature. Among the techniques one can use for thermal switching, the gas-gap technique has the advantages of wide operating temperature range, high switching ratio, and no moving parts. The traditional gas-gap switch uses copper conductors separated by a small gap and an external getter. The switch is activated by heating and cooling the getter by moving gas into and out of the gap, turning the switch on and off. We have designed, built and tested heat switches that use an internal getter to passively turn off at temperatures between 0.2 and 15 K. The getter is thermally anchored to one side of the switch, and when that side of the switch cools through a transition region, gas adsorbs onto the getter and the switch turns off. The challenges are to make the transition region very narrow and tailorable to a wide range of applications, and to achieve high gas conductance when the switch is on. We have made switches using He-3, He-4, hydrogen, and neon gas, and have used charcoal and various metal substrates as getters. Switching ratios range from 1000 to over 10,000. Design and performance of these switches will be discussed in detail.
Plots of oxygen chemical potential against composition of lithium-oxygen solutions and sodium-oxygen solutions for a range of temperature were constructed. For each liquid metal two such plots were prepared. For one plot ideal solution behavior was assumed. For the other plot, existing solubility limit data for oxygen in the liquid metal were used to determine a first-order term for departure from ideality. The use of the plots in evaluating the oxygen gettering capability of refractory metals in liquid metal cooling systems is illustrated by a simple example involving lithium, oxygen, and hafnium.
Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.
A technique for improving high temperature evaporation-condensation heat-transfer devices which have important and unique advantage in terrestrial and space energy processing is described. The device is in the form of a heat pipe comprising a sealed container or envelope which contains a capillary wick. The temperature of one end of the heat pipe is raised by the input of heat from an external heat source which is extremely hot and corrosive. A working fluid of a corrosive alkali metal, such as lithium, sodium, or potassium transfers this heat to a heat receiver remote from the heat source. The container and wick are fabricated from a superalloy containing a small percentage of a corrosion inhibiting or gettering element. Lanthanum, scandium, yttrium, thorium, and hafnium are utilized as the alloying metal.
The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.
DC beam experiment for determining molecule sticking coefficients of gas beams incident on Ti, Ba and Sr gettering surfaces at cryogenic temperature
Titanium is one of several gettering materials available for removing nitrogen from inert gases. The reaction rate of titanium-metal sponge and nitrogen in argon-nitrogen mixtures was studied at 900 degrees C. The rate was found to depend upon the partial pressure of nitrogen in the gas phase. Mathematical relationships simulate titanium systems.
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Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.
Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.
A commercial Zr-V-Fe alloy (i.e., SAES Getters trade name alloy St-172) has been assessed as reversible hydrogen storage material for use in actuators of gas gap heat switches. Two prototype actuators containing the SAES St-172 material were built and operated for several thousand cycles to evaluate performance of the metal hydride system under conditions simulating heat switch operation.
The interaction of hydrogen, injected into silicon using low-energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.
The authors describe work performed as part of the 25-kWe advanced Stirling conversion system project. Liquid alkali metal compatibility is being assessed in an ongoing test program to evaluate candidate heater head materials and fabrication processes at the temperatures and operating conditions required for Stirling engines. Specific materials under evaluation are alloy 713LC, alloy 713LC coated with nickel aluminide, and Udimet 720, each in combination with Waspaloy. The tests were run at a constant 700 C. A eutectic alloy of sodium and potassium (NaK) was the working fluid. Titanium sheet in the system was shown to be an effective oxygen getter. Metallographic and microchemical examination of material surfaces, joints, and their interfaces revealed little or no corrosion after 1000 h. Tests are in progress, with up to 10,000 h exposure.