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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗
NASA NTRS2023

Extended Temperature Operation of Isolated, Precision Gate Driver, ADuM4120

Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Power Electronics↗
NASA NTRS2011

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗
NASA NTRS2015

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗
NASA NTRS2020

Performance Evaluation of Isolated Gate Driver, ADuM4121, Under Exposure to Extreme Temperature

Electronics designed for use in space missions are expected to be exposed to harsh environment including radiation and extreme temperature, to name a few. Severe thermal swings are also encountered depending on planetary exploration, orbital orientation, and mission duration. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an isolated gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗
NASA NTRS2019

Operation of Ultrafast, Low-Side MOSFET Driver, IXD609, over Wide Temperature Range

Electrical power and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. In addition, space-based infrared satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where system electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an ultrafast gate driver for controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗
NASA NTRS2019

Design and optimization of radiation-hardened isolated converters for Jovian environments

This paper presents the design and optimization of a class of flexible, high efficiency, multiple output capable, radiation-hardened isolated DC/DC converters for Jovian environments. The proposed converters achieve lower electromagnetic emission, better thermal management and higher efficiency. A new series of radiation-hardened isolated GaN gate driver circuit is proposed for space applications. Experimental results based on two prototype units implemented in the laboratory verify the performance of the proposed isolated converters.

Carr, Gregory↗
NASA NTRS2010

N channel JFET based digital logic gate structure

A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.

Krasowski, Michael J.↗
NASA NTRS1999

Interplanetary Microlaser Transponders

The feasibility of an asynchronous (i.e. independently firing) interplanetary laser transponder, capable of ranging between Earth and Mars and using the automated SLR2000 Satellite Laser Ranging (SLR) system as an Earth base station, has been suggested. Since that time, we have received a small amount of discretionary funding to further explore the transponder concept and to develop and test an engineering breadboard. Candidate operational scenarios for acquiring and tracking the opposite laser terminal over interplanetary distances have been developed, and breadboard engineering parameters were chosen to reflect the requirements of an Earth-Mars link Laboratory tests have been devised to simulate the Earth- Mars link between two independent SLR2000 transceivers and to demonstrate the transfer of range and time in single photon mode. The present paper reviews the concept of the asynchronous microlaser transponder, the transponder breadboard design, an operational scenario recently developed for an asteroid rendezvous, and the laboratory test setup. The optical head of the transponder breadboard fits within a cylinder roughly 15 cm in diameter and 32 cm in length and is mounted in a commercial two axis gimbal driven by two computer-controlled stepper motors which allows the receiver optical axis to be centered on a simulated Earth image. The optical head is built around a small optical bench which supports a 14.7 cm diameter refractive telescope, a prototype 2 kHz SLR2000 microlaser transmitter, a quadrant microchannel plate photomultiplier (MCP/PMT), a CCD array camera, spatial and spectral filters, assorted lenses and mirrors, and protective covers and sun shields. The microlaser is end-pumped by a fiber-coupled diode laser array. An annular mirror is employed as a passive transmit/receive (T/R) switch in an aperture-sharing arrangement wherein the transmitted beam passes through the central hole and illuminates only the central 2.5 cm of the common telescope (adequate to achieve a 10 arcsecond full laser beam divergence) while the receiver uses the remainder of the 14.7 cm aperture. Additional electronic instrumentation includes the diode pump array and associated heat sink and current drivers, rubidium frequency standard, timing distribution module, range gate generator, a recently developed all-digital correlation range receiver, and system computer. Acquisition of the opposite transponder terminal requires a search within a three-dimensional volume determined by the initial pointing uncertainty and a maximum 500 microsecond uncertainty in the laser time of fire at the opposite terminal for totally uncorrelated Earth and spacecraft clocks. The angular search is aided by a sensitive CCD array capable of imaging the Earth, Moon, and surrounding stars within the nominal + 0.5 degree cone of uncertainty associated with the initial pointing of a spacecraft body or microwave communications dish.

Degnan, John J.↗
NASA NTRS1990

Voltage-Boosting Driver For Switching Regulator

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Trump, Ronald C.↗
NASA NTRS2002

Mosad and Stream Vision For A Telerobotic, Flying Camera System

Two full custom camera systems using the Multiplexed OverSample Analog to Digital (MOSAD) conversion technology for visible light sensing were built and demonstrated. They include a photo gate sensor and a photo diode sensor. The system includes the camera assembly, driver interface assembly, a frame stabler board with integrated decimeter and Windows 2000 compatible software for real time image display. An array size of 320X240 with 16 micron pixel pitch was developed for compatibility with 0.3 inch CCTV optics. With 1.2 micron technology, a 73% fill factor was achieved. Noise measurements indicated 9 to 11 bits operating with 13.7 bits best case. Power measured under 10 milliwatts at 400 samples per second. Nonuniformity variation was below noise floor. Pictures were taken with different cameras during the characterization study to demonstrate the operable range. The successful conclusion of this program demonstrates the utility of the MOSAD for NASA missions, providing superior performance over CMOS and lower cost and power consumption over CCD. The MOSAD approach also provides a path to radiation hardening for space based applications.

Mandl, William↗
NASA NTRS2011

FPGA for Power Control of MSL Avionics

A PLGT FPGA (Field Programmable Gate Array) is included in the LCC (Load Control Card), GID (Guidance Interface & Drivers), TMC (Telemetry Multiplexer Card), and PFC (Pyro Firing Card) boards of the Mars Science Laboratory (MSL) spacecraft. (PLGT stands for PFC, LCC, GID, and TMC.) It provides the interface between the backside bus and the power drivers on these boards. The LCC drives power switches to switch power loads, and also relays. The GID drives the thrusters and latch valves, as well as having the star-tracker and Sun-sensor interface. The PFC drives pyros, and the TMC receives digital and analog telemetry. The FPGA is implemented both in Xilinx (Spartan 3- 400) and in Actel (RTSX72SU, ASX72S). The Xilinx Spartan 3 part is used for the breadboard, the Actel ASX part is used for the EM (Engineer Module), and the pin-compatible, radiation-hardened RTSX part is used for final EM and flight. The MSL spacecraft uses a FC (Flight Computer) to control power loads, relays, thrusters, latch valves, Sun-sensor, and star-tracker, and to read telemetry such as temperature. Commands are sent over a 1553 bus to the MREU (Multi-Mission System Architecture Platform Remote Engineering Unit). The MREU resends over a remote serial command bus c-bus to the LCC, GID TMC, and PFC. The MREU also sends out telemetry addresses via a remote serial telemetry address bus to the LCC, GID, TMC, and PFC, and the status is returned over the remote serial telemetry data bus.

Wang, Duo↗
NASA NTRS2004

A Re-programmable Platform for Dynamic Burn-in Test of Xilinx Virtexll 3000 FPGA for Military and Aerospace Applications

Field Programmable Gate Arrays (FPGA) have played increasingly important roles in military and aerospace applications. Xilinx SRAM-based FPGAs have been extensively used in commercial applications. They have been used less frequently in space flight applications due to their susceptibility to single-event upsets. Reliability of these devices in space applications is a concern that has not been addressed. The objective of this project is to design a fully programmable hardware/software platform that allows (but is not limited to) comprehensive static/dynamic burn-in test of Virtex-II 3000 FPGAs, at speed test and SEU test. Conventional methods test very few discrete AC parameters (primarily switching) of a given integrated circuit. This approach will test any possible configuration of the FPGA and any associated performance parameters. It allows complete or partial re-programming of the FPGA and verification of the program by using read back followed by dynamic test. Designers have full control over which functional elements of the FPGA to stress. They can completely simulate all possible types of configurations/functions. Another benefit of this platform is that it allows collecting information on elevation of the junction temperature as a function of gate utilization, operating frequency and functionality. A software tool has been implemented to demonstrate the various features of the system. The software consists of three major parts: the parallel interface driver, main system procedure and a graphical user interface (GUI).

Field Programmable Gate Arrays (FPGA)↗
NASA NTRS1973

High pulse rate high resolution optical radar system

The system is composed of an optical cavity with a laser and a mode locking means to build up an optical pulse. An optical switch is also provided within the cavity to convert the polarization of the optical pulse generated within the cavity. The optical switch comprises an electro-optical crystal driven by a time delayed driver circuit which is triggered by a coincident signal made from an optical pulse signal and a gating pulse signal. The converted optical pulse strikes a polarization sensitive prism and is deflected out of the cavity toward the pending target in the form of a pulse containing most of the optical energy generated by the laser in the pulse build-up period. After striking the target, the reflected energy is picked up by a transceiver with the total travel time of the pulse being recorded.

Goss, W. C.↗
NASA NTRS1971

Nonvolatile read/write memory element - A concept

Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.

Cricchi, J. R.↗
NASA NTRS2011

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Gummin, Mark A.↗