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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗
NASA NTRS2023

Extended Temperature Operation of Isolated, Precision Gate Driver, ADuM4120

Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Power Electronics↗
NASA NTRS2011

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗
NASA NTRS2015

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗
NASA NTRS2020

Performance Evaluation of Isolated Gate Driver, ADuM4121, Under Exposure to Extreme Temperature

Electronics designed for use in space missions are expected to be exposed to harsh environment including radiation and extreme temperature, to name a few. Severe thermal swings are also encountered depending on planetary exploration, orbital orientation, and mission duration. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an isolated gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗
DOE OSTI2025

Integration Methods for High-Density Integrated Electric Drives (Final Technical Report)

The project goal was to research, design and fabricate high-power-density, high-performance SiC power electronic modules for motor drive inverters in electric vehicles (EVs) to enable the subsequent motor drive to achieve a power density of 100 kW/l. EVs use electric motors instead of internal combustion engines as the prime mover, and their core components are semiconductor-based power electronic modules. Efficient power electronic modules play a vital role in power conversion systems. The performance of power modules directly affects the energy efficiency and overall performance of electric vehicles. Therefore, it is particularly important to develop power modules with high power density and high electrical performance that will perform reliably under EV environmental conditions. To achieve these goals, advanced electronic packaging technologies are required. This report describes a 5-year effort to integrate key aspects surrounding the basic power devices into the module itself to increase power density. These include sensing and sensing readout circuits, gate driver circuits, and two-sided cooling solutions.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
DOE OSTI2024

A Low-Profile Gate Power Supply for a SiC Phase Leg with Reduced Isolation Capacitance

Gate driver power supply (GDPS) for SiC devices needs power to 5 W as the switching frequency increases to hundreds of kHz. Resonant converters with planar magnetics demand GDPS with a lower profile. Also, the isolation capacitance (Cp) needs to be minimized for SiC devices with high dv/dt. This paper proposed a planar 5 W*2, 20 V isolated gate power supply for a SiC phase leg in the EV traction inverter. Air-core magnetics with PCB windings are applied for low profile. A single-switch resonant Class-E topology is proposed with zero-voltage switching at 6.78 MHz to minimize the magnetics footprint for a 6 pF Cp. Compared with commercial power supplies with similar power, the proposed power supply reduced the profile and Cp by more than half without sacrificing its efficiency and power density.

Li, Bo↗
NASA NTRS2019

Operation of Ultrafast, Low-Side MOSFET Driver, IXD609, over Wide Temperature Range

Electrical power and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. In addition, space-based infrared satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where system electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an ultrafast gate driver for controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗
NASA NTRS2019

Design and optimization of radiation-hardened isolated converters for Jovian environments

This paper presents the design and optimization of a class of flexible, high efficiency, multiple output capable, radiation-hardened isolated DC/DC converters for Jovian environments. The proposed converters achieve lower electromagnetic emission, better thermal management and higher efficiency. A new series of radiation-hardened isolated GaN gate driver circuit is proposed for space applications. Experimental results based on two prototype units implemented in the laboratory verify the performance of the proposed isolated converters.

Carr, Gregory↗
DOE OSTI2025

Wireless Pulse-Width Modulation Control of Power Converters Using Ultra-Wideband Technology for Distributed High-Voltage Systems

In this study, we present a new approach for wireless pulse-width modulation (PWM) control of a power converter, applicable to numerous power converters within a complex electrical distribution system. This method eliminates the need for multiple physical connections of gating/PWM signals among distributed converter modules. By using ultra-wideband-based communication, the PWM control signals can be wirelessly transmitted from a central controller to multiple converters simultaneously and seamlessly. System stability is thoroughly analyzed, and experimental results validate the efficacy of the wireless control scheme for a buck converter operating at a 50-kHz switching frequency. The minimum latency obtained from this setup is 5.38 ..mu..s. This control concept offers easier implementation of distributed control in high-voltage power systems, especially in multilevel architectures, even under harsh conditions with ambient noise.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Wireless Pulse-Width Modulation Control of Power Converters Using Ultra-Wideband Technology for Distributed High-Voltage Systems: Preprint

In this study, we present a new approach for wireless pulse-width modulation (PWM) control of a power converter, applicable to numerous power converters within a complex electrical distribution system. This method eliminates the need for multiple physical connections of gating/PWM signals among distributed converter modules. By using ultra-wideband-based communication, the PWM control signals can be wirelessly transmitted from a central controller to multiple converters simultaneously and seamlessly. System stability is thoroughly analyzed, and experimental results validate the efficacy of the wireless control scheme for a buck converter operating at a 50-kHz switching frequency. The minimum latency obtained from this setup is 5.38 mus. This control concept offers easier implementation of distributed control in high-voltage power systems, especially in multilevel architectures, even under harsh conditions with ambient noise.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Dtc Commercialization Software Package

This code is the complete software and firmware components supporting DTC model radios H2 and BluSDR6. This software package contains all the hardware boot up code/config files(BSP), user space Linux code (Web, Network, MAC (media access control) & drivers), the field programable gate array HDL (hardware description language) code and the build environment to compile and organize these components together to work in the aforementioned radios. Additional details of these components are as follows: • Hardware support components o Board support package and configuration files o uBoot • Linux Components: o The web components include the user interface for setup, configuration, and status components of the system. o Vulture code configures the radio’s IP network, configures radio parameters and runs the MAC layer of the radio. • The Field Programmable Gate Array HDL contains hardware drivers, interface logic to go between the software to the physical layer and the radio hardware as well as the logic for the physical layer of the radio. • Build environment includes compilers and config files that compile and organize all the other components to be able to be run on the radios.

Loera, Jose [Idaho National Laboratory (INL), Idah↗
NASA NTRS2010

N channel JFET based digital logic gate structure

A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.

Krasowski, Michael J.↗
NASA NTRS1999

Interplanetary Microlaser Transponders

The feasibility of an asynchronous (i.e. independently firing) interplanetary laser transponder, capable of ranging between Earth and Mars and using the automated SLR2000 Satellite Laser Ranging (SLR) system as an Earth base station, has been suggested. Since that time, we have received a small amount of discretionary funding to further explore the transponder concept and to develop and test an engineering breadboard. Candidate operational scenarios for acquiring and tracking the opposite laser terminal over interplanetary distances have been developed, and breadboard engineering parameters were chosen to reflect the requirements of an Earth-Mars link Laboratory tests have been devised to simulate the Earth- Mars link between two independent SLR2000 transceivers and to demonstrate the transfer of range and time in single photon mode. The present paper reviews the concept of the asynchronous microlaser transponder, the transponder breadboard design, an operational scenario recently developed for an asteroid rendezvous, and the laboratory test setup. The optical head of the transponder breadboard fits within a cylinder roughly 15 cm in diameter and 32 cm in length and is mounted in a commercial two axis gimbal driven by two computer-controlled stepper motors which allows the receiver optical axis to be centered on a simulated Earth image. The optical head is built around a small optical bench which supports a 14.7 cm diameter refractive telescope, a prototype 2 kHz SLR2000 microlaser transmitter, a quadrant microchannel plate photomultiplier (MCP/PMT), a CCD array camera, spatial and spectral filters, assorted lenses and mirrors, and protective covers and sun shields. The microlaser is end-pumped by a fiber-coupled diode laser array. An annular mirror is employed as a passive transmit/receive (T/R) switch in an aperture-sharing arrangement wherein the transmitted beam passes through the central hole and illuminates only the central 2.5 cm of the common telescope (adequate to achieve a 10 arcsecond full laser beam divergence) while the receiver uses the remainder of the 14.7 cm aperture. Additional electronic instrumentation includes the diode pump array and associated heat sink and current drivers, rubidium frequency standard, timing distribution module, range gate generator, a recently developed all-digital correlation range receiver, and system computer. Acquisition of the opposite transponder terminal requires a search within a three-dimensional volume determined by the initial pointing uncertainty and a maximum 500 microsecond uncertainty in the laser time of fire at the opposite terminal for totally uncorrelated Earth and spacecraft clocks. The angular search is aided by a sensitive CCD array capable of imaging the Earth, Moon, and surrounding stars within the nominal + 0.5 degree cone of uncertainty associated with the initial pointing of a spacecraft body or microwave communications dish.

Degnan, John J.↗
NASA NTRS1990

Voltage-Boosting Driver For Switching Regulator

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Trump, Ronald C.↗