Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunctions
Feucht, D. L.↗
SEARCH · Engineering Papers
Results for “gallium selenide”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Tungsten oxide-coated copper gallium selenide sustains long-term solar hydrogen evolution
This work demonstrates that ultrathin (4 nm) tungsten oxide (WO 3 ) coatings on copper gallium selenide (CuGa 3 Se 5 ) photocathodes have the potential for long-term solar hydrogen evolution. We describe how with a combination of a robust 1.84 eV CuGa 3 Se 5 absorber layer, a WO 3 protective coating, and a Pt catalyst, we obtain a new durability milestone for any non-silicon photoelectrochemical hydrogen-producing device by passing 21,490 C cm -2 of charge across six weeks of continuously-illuminated chronoamperometric testing under applied bias.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Polytypism in few-layer gallium selenide
Different stacking sequences due to polytypism in 2-dimensional few-layer GaSe were identified by Raman spectroscopy, HR-S/TEM, and theoretical calculations.
36 MATERIALS SCIENCE↗
Double-Diffusive Convection During Growth of Halides and Selenides
Heavy metal halides and selenides have unique properties which make them excellent materials for chemical, biological and radiological sensors. Recently it has been shown that selenohalides are even better materials than halides or selenides for gamma-ray detection. These materials also meet the strong needs of a wide band imaging technology to cover ultra-violet (UV), midwave infrared wavelength (MWIR) to very long wavelength infrared (VLWIR) region for hyperspectral imager components such as etalon filters and acousto-optic tunable filters (AO). In fact AOTF based imagers based on these materials have some superiority than imagers based on liquid crystals, FTIR, Fabry-Perot, grating, etalon, electro-optic modulation, piezoelectric and several other concepts. For example, broadband spectral and imagers have problems of processing large amount of information during real-time observation. Acousto-Optic Tunable Filter (AOTF) imagers are being developed to fill the need of reducing processing time of data, low cost operation and key to achieving the goal of covering long-wave infrared (LWIR). At the present time spectral imaging systems are based on the use of diffraction gratings are typically used in a pushbroom or whiskbroom mode. They are mostly used in systems and acquire large amounts of hyperspectral data that is processed off-line later. In contrast, acousto-optic tunable filter spectral imagers require very little image processing, providing new strategies for object recognition and tracking. They are ideally suited for tactical situations requiring immediate real-time image processing. But the performance of these imagers depends on the quality and homogeneity of acousto-optic materials. In addition for many systems requirements are so demanding that crystals up to sizes of 10 cm length are desired. We have studied several selenides and halide crystals for laser and AO imagers for MWIR and LWIR wavelength regions. We have grown and fabricated crystals of several materials such as mercurous chloride, mercurous bromide, mercurous iodide, lead chloride lead bromide, lead iodide, thallium arsenic selenide, gallium selenide, zince sulfide zinc selenide and several crystals into devices. We have used both Bridgman and physical vapor transport (PVT) crystal growth methods. In the past have examined PVT growth numerically for conditions where the boundary of the enclosure is subjected to a nonlinear thermal profile. Since past few months we have been working on binary and ternary materials such as selenoiodides, doped zinc sulfides and mercurous chloro bromide and mercurous bromoiodides. In the doped and ternary materials thermal and solutal convection play extremely important role during the growth. Very commonly striations and banding is observed. Our experiments have indicated that even in highly purified source materials, homogeneity in 1-g environment is very difficult. Some of our previous numerical studies have indicated that gravity level less than 10-4 (-g) helps in controlling the thermosolutal convection. We will discuss the ground based growth results of HgClxBr(1-x) and ZnSe growth results for the mm thick to large cm size crystals. These results will be compared with our microgravity experiments performed with this class of materials. For both HgCl-HgBr and ZnS-ZnSe the lattice parameters of the mixtures obey Vagard's law in the studied composition range. The study demonstrates that properties are very anisotropic with crystal orientation, and performance achievement requires extremely careful fabrication to utilize highest figure of merit. In addition, some parameters such as crystal growth fabrication, processing time, resolution, field of view and efficiency will be described based on novel solid solution materials. It was predicted that very similar to the pure compounds solid solutions also have very large anisotropy, and very precise oriented and homogeneous bulk and thin film crystals is required to achieve maximum performance of laser or imagers. Some of the parameters controlling the homogeneity such as thermos-solutal convection driven forces can be controlled in microgravity environments to utilize the benefits of these unique materials.
Singh, N. B.↗
Design of Multifunctional Materials: Chalcogenides and Chalcopyrites
There is a strong need for developing multifunctional materials to reduce the cost of applied material without compromising the performance of the detectors, devices and sensors. The materials design, processing, growth and fabrication of bulk and nanocrystals and fabrication into devices and sensors involve huge cost and resources including a multidisciplinary team of experts. Because of this reason, prediction of multifunctionality of materials before design and development should be evaluated. Chalcogenides and chalcopyrites are a very exciting class of materials for developing multifunctionality. Materials such as Gallium selenide GaSe and zinc selenide ZnSe have been proven to be excellent examples. GaSe is a layered material and very difficult to grow in large crystal. However, it's ternary and quaternary analogs such as thallium gallium selenide TlGaSe2, thallium gallium selenide sulfide TlGaSe2-xSs, thallium arsenic selenide Tl3AsSe3, silver gallium selenide AgGaGe3Se8, AgGaGe5Se12 and several others have shown great promise for multifunctionality. Several of these materials have shown good efficiency for frequency conversion (nonlinear optical NLO), electro-optic modulation, and acousto-optic tunable filters and imagers suitable for the visible, near-infrared wavelength, mid wave infrared (MWIR), long wave infrared (LWIR) and even up to Tera hertz wavelength (THW) regions. In addition, this class of materials have demonstrated low absorption coefficients and power handling capability in the systems. Also, these crystals do not require post growth annealing, show very large transparency range and fabricability.
Singh, N. B.↗
Optical Characteristics of Radiated Multifunctional Optical Materials
The performance of optical and electronic materials, and devices are affected significantly in space due to exposure from high energy radiations. We have been investigating the effect of -ray radiations on multifunctional binary and ternary selenide and halide crystals. These materials have shown excellent performance for the wavelength conversion in MWIR and LWIR regions, acousto-optics, and great potential for radiation detection. Crystals with high Z materials such as thallium, mercury and lead based compounds have great potential for the development of a variety of devices and components suitable for space applications. We will report on the characteristics of several halides including mercurous halides (Hg2X2, X= Cl, Br, I), Thallium mercury iodide (Tl4HgI4) and thallium arsenic selenide and thallium gallium selenide, and ternary selenides. These crystals, synthesized with high purity source materials, will be evaluated by studying optical characteristics and measuring resistivity after exposure to a 137Cs -ray source.
Radiation↗
UV-Enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern
III–VI post-transition-metal chalcogenides are layered semiconductor materials that exhibit direct band gaps in multilayers. Defect engineering is essential in 2D layered semiconductors for functional devices. Here, in this work, we report defect engineering in multilayer gallium selenide (GaSe) and indium selenide (InSe), where defects generated by ultraviolet (UV, 325 nm) laser irradiation result in an additional photoluminescence (PL) line. The additional PL line is due to defect-bound excitons. Characteristics of the defect emission are similar in GaSe and InSe samples subjected to UV irradiation, air annealing, and hydrostatic pressure. Two-beam UV interference was applied to create grating patterns with a periodic array of low and high densities of defects in GaSe. Density functional theory has identified the defect type in GaSe. The results provide valuable insights into defect generation and UV scribing of photonic circuits in 2D Se-based multilayers for optical integration in a 2D platform.
2D multilayered materials↗
High-specific-power flexible transition metal dichalcogenide solar cells
Abstract Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoO x capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g −1 for flexible TMD (WSe 2 ) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g −1 , creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.
42 ENGINEERING↗
Advancing PV material performance using nanoscale opto-electrical characterization
The purpose of this program was to improve the efficiency of photovoltaics by characterizing their optoelectronic properties at the nanoscale. We investigated Copper Indium Gallium Selenide (CIGS) materials produced by Dow. We modified an atomic force microscope (AFM) to work with a highly controlled environment under controlled illumination at the probe to study the main power conversion efficiency determining parameters for photovoltaics of open circuit voltage, short circuit current, carrier lifetime and diffusion length, and band alignment at interfaces and defects with sub 10nm spatial resolution of their device materials.
14 SOLAR ENERGY↗
Guidance and control research
Guidance and control research - Josephson junction memory elements, frequency response of thin film thermal detectors, gallium selenide barrier gate, and photoconductor metal contacts
Source record↗
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969
Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germanium
Feucht, D. L.↗
Recrystallization of Cu(In,Ga)Se2 Semiconductor Thin Films via InCl3 Treatment
Not provided.
Materials Science↗
Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping
Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton–exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton–exciton annihilation nonradiative pathway is suppressed, leading to ∼60% improvement of emission intensity and an enhancement of the single photon purity g (2) (0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. In conclusion, this research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit
Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can provide only a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopy, supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ~100 nm spectral range and 2 orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to observed CL photon superbunching. Also, the GaSe SPEs show excellent stability, where their properties remain unchanged after electron beam exposure. Importantly, we anticipate that this comprehensive study on the nanoscale strain control of two-dimensional SPEs will provide key insights to guide the development of truly deterministic quantum photonics.
2D materials↗
Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe
The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.
2D materials↗
Photovoltaic (PV) Module Technologies: 2020 Benchmark Costs and Technology Evolution Framework Results
This report benchmarks 2020 PV module minimum sustainable price (MSP) via bottom-up manufacturing cost analysis, for established PV technologies in mass production, including crystalline silicon, cadmium telluride (CdTe), and copper indium gallium (di)selenide. We provide technology roadmaps to additional MSP reductions for these PV technologies. Separately, we consider III-V and perovskite PV technologies which are currently in small-scale or pilot production. Finally, this report uses a technology evolution framework (TEF) to analyze drivers of levelized cost of energy reductions, including installed system cost - which is heavily influenced by module price - as well as service life and annual energy yield.
14 SOLAR ENERGY↗
Operando X-ray Nanocharacterization of Polycrystalline Thin Film Modules
Non-destructive measurement techniques, with high spatial resolution, capable of correlating composition and structure with device properties, are few and far between. For the case of polycrystalline and inhomogeneous materials, the added challenge is that large sampling areas are necessary in order to have a statistical representation of the specimen under study. For the study of grain cores and grain boundaries in polycrystalline solar absorbers this is of particular importance since their dissimilar behavior and variability throughout the samples makes it difficult to draw conclusions and ultimately optimize the materials and devices. Our approach to use state-of-the-art x-ray microscopy to study full module stacks under operating conditions is unique. Understanding the effects of elemental and charge migration under full encapsulation and operating conditions will allow CIGS and CdTe manufactures and in particular our partners in this proposal to modify materials, stacks, architectures, and processing steps to minimize the performance losses through time.
14 SOLAR ENERGY↗
In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications
Cu(In,Ga)Se2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effects of these changes, not all parameters of the solar cells are enhanced, yielding an increase of 15% in the device efficiency at the most.
14 SOLAR ENERGY↗